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    DIELECTRIC BUFFER LAYER
    1.
    发明申请
    DIELECTRIC BUFFER LAYER 审中-公开
    介质缓冲层

    公开(公告)号：WO2017099736A1

    公开(公告)日：2017-06-15

    申请号：PCT/US2015/064620

    申请日：2015-12-09

    Applicant: INTEL CORPORATION

    Inventor： TELANG, Adwait ,  MUIRHEAD, John-Gerard ,  LEE, Kevin J. ,  PATTABHIRAMAN, Sriram ,  JEONG, James

    IPC: H01L21/768

    CPC classification number: H01L24/00 ,  H01L21/76837 ,  H01L23/145 ,  H01L23/147 ,  H01L23/49894 ,  H01L23/525 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/5385 ,  H01L2224/16225

    Abstract: Embodiment of the present disclosure are directed to methods for forming an LMI landing pad on a silicon wafer. The method includes forming, on a substrate, a redistribution layer (RDL); forming, on the RDL and the substrate, a passivation layer covering the substrate and the RDL; forming, on the passivation layer, a patternable dielectric material layer; processing the patternable dielectric material layer to expose a portion of the passivation layer covering the RDL; processing the portion of the passivation layer covering the RDL to expose a portion of the RDL; and forming, on the exposed portion of the RDL, an LMI landing pad. The resulting wafer can include a redistribution line having a top portion and a sidewall portion; a passivation layer covering the sidewall portion; a dielectric layer covering the passivation layer; and a metal interface covering the top portion of the redistribution line.

    Abstract translation: 本公开的实施例针对用于在硅晶片上形成LMI着陆焊盘的方法。 该方法包括在衬底上形成再分布层（RDL）; 在所述RDL和所述衬底上形成覆盖所述衬底和所述RDL的钝化层; 在钝化层上形成可图案化的电介质材料层; 处理可图案化的介电材料层以暴露覆盖RDL的部分钝化层; 处理覆盖RDL的部分钝化层以暴露部分RDL; 以及在RDL的暴露部分上形成LMI着陆垫。 所得晶片可包括具有顶部和侧壁部分的再分布线; 覆盖所述侧壁部分的钝化层; 覆盖钝化层的介电层; 和一个覆盖再分配线顶部的金属接口。

    MULTI-LAYERED CONTACT TO SEMICONDUCTOR STRUCTURE
    2.
    发明申请
    MULTI-LAYERED CONTACT TO SEMICONDUCTOR STRUCTURE 审中-公开
    多层接触半导体结构

    公开(公告)号：WO2017004365A1

    公开(公告)日：2017-01-05

    申请号：PCT/US2016/040375

    申请日：2016-06-30

    Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.

    Inventor： SHUR, Michael ,  DOBRINSKY, Alexander

    IPC: H01L27/15 ,  H01L33/36

    CPC classification number: H01L33/42 ,  H01L24/00 ,  H01L31/00 ,  H01L33/10 ,  H01L33/32 ,  H01L33/40 ,  H01L2933/0016 ,  H01S5/0224 ,  H01S5/0421 ,  H01S5/34333 ,  H02S40/44

    Abstract: A multi-layered contact to a semiconductor structure and a method of making is described. In one embodiment, the contact includes a discontinuous Chromium layer formed over the semiconductor structure. A discontinuous Titanium layer is formed directly on the Chromium layer, wherein portions of the Titanium layer extend into at least some of the discontinuous sections of the Chromium layer. A discontinuous Aluminum layer is formed directly on the Chromium layer, wherein portions of the Aluminum layer extend into at least some of the discontinuous sections of the Titanium layer and the Chromium layer.

    Abstract translation: 描述了与半导体结构的多层接触和制造方法。 在一个实施例中，触点包括形成在半导体结构上的不连续的铬层。 直接在铬层上形成不连续的钛层，其中钛层的部分延伸到铬层的至少一些不连续部分。 直接在铬层上形成不连续的铝层，其中铝层的部分延伸到钛层和铬层的至少一些不连续部分。

    RECTIFIER DIODE
    4.
    发明申请
    RECTIFIER DIODE 审中-公开
    整流二极管

    公开(公告)号：WO1997024762A1

    公开(公告)日：1997-07-10

    申请号：PCT/DE1996002139

    申请日：1996-11-09

    Applicant: ROBERT BOSCH GMBH ,  SPITZ, Richard ,  SCHULER, Siegfried

    Inventor： ROBERT BOSCH GMBH

    IPC: H01L23/049

    CPC classification number: H01L23/049 ,  H01L23/24 ,  H01L24/00 ,  H01L2924/12035 ,  H01L2924/351 ,  H01L2924/00

    Abstract: The invention relates to a rectifier diode which has a base (2) and which can be pressed into a provided opening of a rectifier arrangement. A platform (3) forming one part with the base is arranged on the base, and a semiconductor chip (4) is secured to said platform and is connected to a head wire (8). According to the invention, a wall (9) surrounding the platform is provided which ensures a low, homogenous level of bending strain on the supporting surface of the chip, and in comparison with a wall-free structure, said wall leads to uncritical centring of the chip during production. Moreover, semiconductor chips which are not that well centred no longer alter the reliability of the rectifier diode.

    Abstract translation: 本发明涉及一种具有基座（2），其被压入提供了一种用于整流器布置的开口的整流二极管，与（3）在基片与设置在插座，被安装在它的一部分，在半导体芯片上的平台（4） 又与一个头布线（8）连接。 在本发明的设计，围绕所述壁（9）的平台提供，相比于无墙Chipzentrierung使得在制造非关键的结构这确保了低和加压和均匀的弯曲应力施加到管芯支撑表面中。 不如为中心的半导体芯片不再用于整流器二极管的可靠性的障碍。

    DIE PLACEMENT HEAD WITH TURRET
    6.
    发明申请
    DIE PLACEMENT HEAD WITH TURRET 审中-公开
    DIY放置头与TURRET

    公开(公告)号：WO2017031100A1

    公开(公告)日：2017-02-23

    申请号：PCT/US2016/047135

    申请日：2016-08-16

    Applicant: MRSI SYSTEMS, LLC

    Inventor： CELIA, Nicholas Samuel Jr.

    IPC: H01L21/52 ,  H01L21/027 ,  H01L21/02 ,  H01L21/67

    CPC classification number: H01L24/00 ,  H01L24/75

    Abstract: Herein described is a system for the placement of dies on a substrate that uses a rotating turret carried with the die placement system to supply die placement heads necessary for the placement of various dies on a substrate, where multiple dies are to be placed, to a force application rod, thereby allowing for the rapid and efficient placement of a variety of dies on a single substrate.

    Abstract translation: 这里描述了一种用于在基板上放置模具的系统，该系统使用带有芯片放置系统的旋转转台，以将待放置多个模具的基板上放置各种模具所需的裸片放置头提供给 从而允许将各种模具快速且有效地放置在单个基板上。

    双界面卡片内置天线的自动挑线方法及其装置
    8.
    发明申请
    双界面卡片内置天线的自动挑线方法及其装置 审中-公开

    公开(公告)号：WO2014008706A1

    公开(公告)日：2014-01-16

    申请号：PCT/CN2012/080498

    申请日：2012-08-23

    Applicant: 东莞市锐祥智能卡科技有限公司 ,  熊曙光

    Inventor： 熊曙光

    IPC: G06K19/077

    CPC classification number: H01L24/00 ,  G06K19/07766 ,  G06K19/07773 ,  G06K19/07777

    Abstract: 本发明公开了一种双界面卡片内置天线的自动挑线方法及其装置，其方法包括： S1：将卡片放置于传送机构上，放置时使得卡片的天线头与挑线夹具的开、合方向基本垂直；S2：OCR扫描天线头，以形成天线头的位置数据；S3：主控系统根据位置数据，控制已加热的挑线夹具进行挑线操作，挑线夹具将天线头旁的卡片融化使得天线头与卡片分离，然后挑线夹具加紧并拉起天线头，使天线头竖立于卡片上。其装置包括包括机架（1）、设置在机架（1）上的主控系统、设置在机架（1）上并分别与主控系统连接的传送机构（2）、 OCR扫描组（3）和挑线机构（4）。其有益效果：避免了挑线时损伤卡片，提高了成品率，减少了原料浪费，也提高了生产效率。

    PHOTOVOLTAIC DEVICE FOR STIMULATION OF CELLS AND/OR ELECTROCHEMICAL REACTIONS
    9.
    发明申请
    PHOTOVOLTAIC DEVICE FOR STIMULATION OF CELLS AND/OR ELECTROCHEMICAL REACTIONS 审中-公开
    用于刺激细胞和/或电化学反应的光伏装置

    公开(公告)号：WO2017157874A1

    公开(公告)日：2017-09-21

    申请号：PCT/EP2017/055886

    申请日：2017-03-14

    Applicant: UNIVERSITÄT HAMBURG ARBEITSSTELLE FÜR WISSENS- UND TECHNOLOGIETRANSFER

    Inventor： DORN, August ,  DIEDRICH, Daniel ,  BLICK, Robert

    IPC: A61N1/20 ,  A61K41/00 ,  A61N1/32 ,  C12M1/42 ,  C12N5/0793 ,  C12N13/00 ,  B82Y5/00 ,  B82Y40/00 ,  C12M1/12 ,  H01L21/02 ,  H01L31/0392 ,  H01L31/07

    CPC classification number: A61N1/205 ,  A61L27/50 ,  A61L2400/12 ,  A61N1/326 ,  A61N5/0616 ,  A61N5/062 ,  A61N5/0622 ,  A61N5/0624 ,  A61N2005/0659 ,  A61N2005/0662 ,  A61N2005/067 ,  C12M25/08 ,  C12M35/02 ,  C12N5/0619 ,  C12N2529/10 ,  H01L24/00 ,  H01L31/035281 ,  H01L31/07 ,  H01L2924/12032

    Abstract: Device (1) for stimulation of at least one cell (2), and/or for stimulation of at least one electrochemical reaction, comprising at least one semiconductor (3) that is configured to convert electromagnetic radiation (4) into a charge separation (5), wherein the semiconductor (3) is planar and the device further comprises a planar metal layer (6), wherein the metal layer (6) forms a Schottky barrier (7), and/or a metal-insulator-semiconductor junction, with the semiconductor layer (3), the semiconductor and/or the metal layer is configured to bind to a cell (2) on contact, and/or configured to repel the cell (2) on contact in order to promote oriented or non-oriented binding to the cell, and/or configured to promote the electrochemical reaction when the device (1) is in contact with a solvent (11). The semiconductor (3) comprises at least one platelet (31) having a planar top face, a planar bottom face, and a circumferential side face that is more or less line-shaped or band-shaped, wherein either the top face or the bottom face of the platelet (31) is coated with the metal layer (6). A system (10) for the stimulation of a plurality of points in a network of cells, comprising a plurality of devices (1) according to the invention dispersed in a solvent (11). Methods (100-140, 210-240) for the fabrication of a plurality of devices (1) according to the invention. A disinfecting or sterilizing agent, and a medicament, with a plurality of devices according to the invention as its active ingredient.

    Abstract translation: （1），其用于刺激至少一个电池（2），和/或用于刺激至少一个电化学反应，包括至少一个半导体（3），其被配置为将电磁辐射 （6）形成肖特基势垒（7），和/或其中所述金属层 金属 - 绝缘体 - 半导体结，所述半导体层（3），所述半导体和/或所述金属层被配置为在接触时结合到单元（2），和/或被配置为在接触时排斥所述单元 以便促进定向或非定向结合到细胞，和/或被配置成当装置（1）与溶剂（11）接触时促进电化学反应。 半导体（3）包括至少一个具有平面顶面，平面底面和周向侧面的小板（31），该周面或多或少为线形或带形，其中顶面或底面 用金属层（6）涂覆片状物（31）的表面。 一种用于刺激细胞网络中的多个点的系统（10），包括分散在溶剂（11）中的多个根据本发明的装置（1）。 用于制造根据本发明的多个装置（1）的方法（100-140,210-240）。 一种消毒剂或消毒剂以及一种药剂，其具有多个根据本发明的装置作为其活性成分。

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