摘要:
A microelectronic assembly can include an address bus comprising a plurality of signal conductors each passing sequentially through first, second, third, and fourth connection regions, and first and second microelectronic packages. The first microelectronic package can include first and second microelectronic elements, and the second microelectronic package can include third and fourth microelectronic elements. Each microelectronic element can be electrically coupled to the address bus via the respective connection region. An electrical characteristic between the first and second connection regions can be within a same tolerance of the electrical characteristic between the second and third connection regions.
摘要:
In a method of fabricating packaged semiconductor devices in panel format, a flat panel sheet as a carrier (100) is dimensioned for a set of contiguous chips and includes a stiff substrate (101) of an insulating plate, and a tape (102) having a surface layer (110) of a first adhesive releasable at elevated temperatures, a core base film (111), and a bottom layer (112) with a second adhesive attached to the substrate (101). The method includes attaching a set onto the first adhesive layer, the chip terminals having terminals with metal bumps facing away from the first adhesive layer. Also, the method includes laminating a compliant insulating material to fill gaps between the bumps and to form an insulating frame surrounding the set, grinding lamination material to expose the bumps, plasma-cleaning, and sputtering at least one layer of metal.
摘要:
A submount for connecting a semiconductor device to an external circuit, the submount comprising: a planar substrate formed from an insulating material and having relatively narrow edge surfaces and first and second relatively large face surfaces; at least one recess formed along an edge surface; a layer of a conducting material formed on a surface of each of the at least one recess; a first plurality of soldering pads on the first face surface configured to make electrical contact with a semiconductor device; and electrically conducting connections each of which electrically connects a soldering pad in the first plurality of soldering pads to the layer of conducting material of a recess of the at least one recess.
摘要:
An integrated circuit (IC) device (300) includes a substrate (305) having a top surface (304) including active circuitry (309) including a plurality of I/O nodes (308), and a plurality of die pads (302) coupled to the plurality of I/O nodes. A first dielectric layer (306) including first dielectric vias (312) is over the plurality of die pads. A redirect layer (RDL) (314) including a plurality of RDL capture pads (318) is coupled to the plurality of die pads over the first dielectric vias. A second dielectric layer (320) including second dielectric vias (322) is over the plurality of RDL capture pads. At least one of the second dielectric vias is a crack arrest via that has a via shape that includes an apex that faces away from a neutral stress point of the IC die and is oriented along a line from the neutral stress point to the crack arrest via to face in a range of ± 30 degrees from the line. Under bump metallization (UBM) pads (324) are coupled to the plurality of RDL capture pads over the second dielectric vias, and metal bonding connectors (326) are on the UBM pads.
摘要:
In an apparatus for connecting integrated circuit devices, a plurality of primary electrically conductive contacts and a plurality of primary electrically conductive pillars are electrically coupled to a primary integrated circuit device. The plurality of primary electrically conductive contacts form a pattern corresponding to secondary electrically conductive contacts disposed on one or more secondary integrated circuit devices. The plurality of primary electrically conductive pillars extends away from the primary integrated circuit device. The plurality of primary electrically conductive pillars forms a pattern that corresponds to substrate electrically conductive contacts that are disposed on a substrate. The plurality of primary electrically conductive pillars and associated connecting material provide a standoff height between the primary integrated circuit device and the substrate that is greater than or equal to a height of the one or more secondary integrated circuit devices.
摘要:
A microelectronic package includes a lower unit 110A having a lower unit substrate with conductive features and a top and bottom surface 64, 66. The lower unit 110A includes., one or more lower unit chips 112A, 132A overlying the top surface 64 of the lower unit substrate 62 that are electrically connected to the conductive features 68 of the lower unit substrate 62. The microelectronic package also includes an upper unit 110 including an upper unit substrate having conductive features, top and bottom surfaces and a hole extending between such top and bottom surfaces. The upper unit further includes one or more upper unit chips 112, 132 overlying the top surface of the upper unit substrate and electrically connected to the conductive features 141 of the upper unit substrate by connections extending within the hole 76.
摘要:
A resin composition for flip-chip packaging suitable for flip-chip packaging of high productivity and high reliability and applicable to flip-chip packaging of next generation LSI contains a convection additive (12) boiling when resin (13) is heated. When the resin (13) is heated, metal particles melt in the resin and the boiling convection additive (12) convects through the resin. When the resin (13) supplied between a circuit board (10) and a semiconductor chip (20) is heated, and the metal particles melted in the resin (13) self gather between the circuit board (10) and the terminals (11, 21) of the semiconductor chip (20), a joint (22) for connecting the terminals electrically is formed and then the semiconductor chip (20) is secured to the circuit board (10) by curing the resin (13) thus obtaining a flip-chip package.