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    IRIDIUM PRECURSORS FOR ALD AND CVD THIN FILM DEPOSITION AND USES THEREOF
    4.
    发明申请
    IRIDIUM PRECURSORS FOR ALD AND CVD THIN FILM DEPOSITION AND USES THEREOF 审中-公开

    公开(公告)号：WO2018187547A3

    公开(公告)日：2018-10-11

    申请号：PCT/US2018/026220

    申请日：2018-04-05

    Applicant: APPLIED MATERIALS, INC.

    Inventor： KNISLEY, Thomas

    IPC: C23C16/22 ,  C23C16/455 ,  C07F15/00

    Abstract: Metal coordination complexes comprising an iridium atom coordinated to at least one diazabutadiene based ligand having a structure represented by: (I), (A), (B) where R1 and R4 are independently selected from the group consisting of C1-C4 alkyl and amino groups, and each of R2 and R3 are independently selected from the group consisting of H, C1-C3 alkyl, or amino groups are described. Processing methods using the metal coordination complexes are also described.

    흡착억제 표면처리를 이용한 2차원 물질의 제조방법
    5.
    发明申请
    흡착억제 표면처리를 이용한 2차원 물질의 제조방법 审中-公开

    公开(公告)号：WO2018186535A1

    公开(公告)日：2018-10-11

    申请号：PCT/KR2017/006884

    申请日：2017-06-29

    Applicant: 한국해양대학교 산학협력단

    Inventor： 안지훈 ,  전우진 ,  정성준

    IPC: C23C16/04 ,  C23C16/455 ,  C23C16/30 ,  C23C16/26 ,  C23C16/34 ,  C23C16/22 ,  C23C16/24

    Abstract: 본 발명은 흡착 억제제의 도입으로 결정크기를 증가시켜 전기적 특성을 향상시킨 2차원 물질의 제조방법에 관한 것으로, 보다 상세하게는 (1) 흡착 부위(adsorption site)를 구비하는 기판에 흡착 억제제를 도입하여 상기 흡착 억제제를 흡착시키는 단계; (2) 원자층 증착법(atomic layer deposition)을 이용하여 상기 흡착 억제제가 흡착되지 않은 흡착 부위에 2차원 물질을 형성하는 단계; 및 (3) 상기 형성된 2차원 물질을 결정화하는 단계;를 포함하는 흡착억제 표면처리를 이용한 2차원 물질의 제조방법을 개시한다. 본 발명에 따른 흡착억제 표면처리를 이용한 2차원 물질의 제조방법은 넓은 면적에 대하여 균일한 박막형태의 2차원 물질을 얻을 수 있고, 낮은 공정온도에서 진행되어 열에 약한 플라스틱 재질의 기판 적용이 자유로우며, 2차원 물질의 결정성을 높임에 따라 우수한 전하 이동도를 나타내는 2차원 물질의 제조가 가능한 효과를 나타낸다.

    MOLECULAR LAYER DEPOSITION OF SILICON CARBIDE
    7.
    发明申请
    MOLECULAR LAYER DEPOSITION OF SILICON CARBIDE 审中-公开
    分子层沉积碳化硅

    公开(公告)号：WO2013109381A1

    公开(公告)日：2013-07-25

    申请号：PCT/US2012/070642

    申请日：2012-12-19

    Applicant: APPLIED MATERIALS, INC.

    Inventor： UNDERWOOD, Brian ,  MALLICK, Abhijit Basu ,  INGLE, Nitin K.

    IPC: C23C16/44 ,  C23C16/448 ,  C23C16/22 ,  H01L21/205

    CPC classification number: H01L21/02104 ,  C23C16/325 ,  C23C16/45536 ,  H01L21/02529 ,  H01L21/0262

    Abstract: Molecular layer deposition of silicon carbide is described. A deposition precursor includes a precursor molecule which contains silicon, carbon and hydrogen. Exposure of a surface to the precursor molecule results in self-limited growth of a single layer. Though the growth is self-limited, the thickness deposited during each cycle of molecular layer deposition involves multiple "atomic" layers and so each cycle may deposit thicknesses greater than typically found during atomic layer depositions. Precursor effluents are removed from the substrate processing region and then the surface is irradiated before exposing the layer to the deposition precursor again.

    Abstract translation: 描述碳化硅的分子层沉积。 沉积前体包括含有硅，碳和氢的前体分子。 将表面暴露于前体分子导致单层自限制生长。 虽然生长是自限制的，但是在分子层沉积的每个循环期间沉积的厚度涉及多个“原子”层，因此每个循环可以沉积比在原子层沉积期间通常发现的厚度。 从底物处理区域除去前体流出物，然后在再次将层暴露于沉积前体之前照射表面。

    中子敏感镀膜及其形成方法
    8.
    发明申请
    中子敏感镀膜及其形成方法 审中-公开

    公开(公告)号：WO2013091280A1

    公开(公告)日：2013-06-27

    申请号：PCT/CN2012/001608

    申请日：2012-11-30

    Applicant: 同方威视技术股份有限公司 ,  清华大学

    Inventor： 杨祎罡 ,  李元景 ,  张勤俭 ,  陆年华 ,  宫辉 ,  曾鸣

    IPC: C23C16/44 ,  C23C16/22 ,  G01T3/00

    CPC classification number: C23C16/45525 ,  C23C16/45555

    Abstract: 本发明涉及中子敏感镀膜及其形成方法。本发明的形成中子灵敏镀膜的方法主要包括：将第一敏感膜前驱体馈入反应腔中，使得第一敏感膜前驱体的分子被吸附在基材表面上，从而形成一层由该前驱体的分子构成的分子膜；在清除了反应腔中多余的前驱体后，将不同于第一敏感膜前驱体的另一敏感膜前驱体馈入反应腔中，以使所述另一敏感膜前驱体与基材表面上刚形成的分子膜发生化学反应；之后清除掉反应腔中多余的前驱体；如果还有其他需要馈入的敏感膜前驱体，则依次将其馈入进行反应，并清除多余的前驱体；重复上述馈入前驱体、清除多余前驱体的步骤，直到形成期望厚度的含有中子敏感核素的镀膜。

    POINT-OF-USE SILYLAMINE GENERATION
    10.
    发明申请
    POINT-OF-USE SILYLAMINE GENERATION 审中-公开
    使用要点使用硅烷生成

    公开(公告)号：WO2011049811A3

    公开(公告)日：2011-07-14

    申请号：PCT/US2010052643

    申请日：2010-10-14

    Applicant: APPLIED MATERIALS INC ,  KOVARSKY NICOLAY Y ,  LUBOMIRSKY DMITRY

    Inventor： KOVARSKY NICOLAY Y ,  LUBOMIRSKY DMITRY

    IPC: C23C16/22 ,  C23C16/30 ,  C23C16/44 ,  H01L21/205

    CPC classification number: H01L21/02274 ,  C01B21/087 ,  C23C16/4488 ,  H01L21/0217 ,  H01L21/02222

    Abstract: The production and delivery of a reaction precursor containing one or more silylamines near a point of use is described. Silylamines may include trisilylamine (TSA) but also disilylamine (DSA) and monosilylamine (MSA). Mixtures involving two or more silylamines can change composition (e.g. proportion of DSA to TSA) over time. Producing silylamines near a point-of-use limits changing composition, reduces handling of unstable gases and reduces cost of silylamine-consuming processes.

    Abstract translation: 描述了在使用点附近含有一种或多种甲硅烷基胺的反应前体的生产和递送。 甲硅烷基胺可以包括三甲硅烷胺（TSA），也可以包括二甲苯胺（DSA）和单甲胺（MSA）。 涉及两种或多种甲硅烷基胺的混合物可随时间改变组成（例如DSA与TSA的比例）。 在使用点附近生产甲硅烷基胺限制了组合变化，减少了不稳定气体的处理，并降低了甲胺胺消耗过程的成本。

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