Patent search ap:("英飞凌科技股份有限公司") AND inv:"I·尼基丁" Page 1

1.

发明授权
层叠型电子器件有权

公开(公告)号：CN102097427B

公开(公告)日：2013-07-10

申请号：CN201010550394.X

申请日：2010-11-09

Applicant: 英飞凌科技股份有限公司

Inventor： H·埃维 , J·马勒 , A·普鲁克尔 , I·尼基丁

IPC: H01L25/16 , H01L23/29 , H01L23/485 , H01L23/498 , H01L21/98 , H01L21/50 , H01L21/56 , H01L21/60

CPC classification number: H01L21/56 , H01L23/3121 , H01L23/3677 , H01L23/492 , H01L23/49844 , H01L23/5389 , H01L24/24 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/82 , H01L24/83 , H01L25/071 , H01L25/074 , H01L25/16 , H01L2224/04105 , H01L2224/24137 , H01L2224/24226 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/29144 , H01L2224/29147 , H01L2224/2919 , H01L2224/29311 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/32245 , H01L2224/32507 , H01L2224/48227 , H01L2224/73267 , H01L2224/76155 , H01L2224/82102 , H01L2224/83191 , H01L2224/83801 , H01L2224/83805 , H01L2224/83825 , H01L2224/8384 , H01L2224/83855 , H01L2224/92 , H01L2224/92244 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/0665 , H01L2924/0781 , H01L2924/10329 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/1579 , H01L2924/181 , H01L2924/19041 , H05K1/185 , H05K1/186 , H05K3/4644 , H05K2201/10674 , H05K2201/10969 , H01L2224/83 , H01L2224/82 , H01L2924/01014 , H01L2924/00 , H01L2924/01049 , H01L2224/45099 , H01L2224/45015 , H01L2924/207

Abstract: 本发明涉及一种层叠型电子器件，所述层叠型电子器件包括第一半导体芯片，所述第一半导体芯片限定第一主面和与该第一主面相对的第二主面，并在所述第一主面上具有至少一个电极垫。所述层叠型电子器件还包括载体，在所述载体的第一主表面处布置有第一结构化金属层。所述第一结构化金属层经由导电材料的第一接合层接合至所述电极垫，其中所述第一接合层具有小于10μm的厚度。第一绝缘层覆盖在所述载体的第一主表面和所述第一半导体芯片上面。

2.

发明公开
层叠型电子器件有权

公开(公告)号：CN102097427A

公开(公告)日：2011-06-15

申请号：CN201010550394.X

申请日：2010-11-09

Applicant: 英飞凌科技股份有限公司

Inventor： H·埃维 , J·马勒 , A·普鲁克尔 , I·尼基丁

IPC: H01L25/16 , H01L23/29 , H01L23/485 , H01L23/498 , H01L21/98 , H01L21/50 , H01L21/56 , H01L21/60

CPC classification number: H01L21/56 , H01L23/3121 , H01L23/3677 , H01L23/492 , H01L23/49844 , H01L23/5389 , H01L24/24 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/82 , H01L24/83 , H01L25/071 , H01L25/074 , H01L25/16 , H01L2224/04105 , H01L2224/24137 , H01L2224/24226 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/29144 , H01L2224/29147 , H01L2224/2919 , H01L2224/29311 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/32245 , H01L2224/32507 , H01L2224/48227 , H01L2224/73267 , H01L2224/76155 , H01L2224/82102 , H01L2224/83191 , H01L2224/83801 , H01L2224/83805 , H01L2224/83825 , H01L2224/8384 , H01L2224/83855 , H01L2224/92 , H01L2224/92244 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/0665 , H01L2924/0781 , H01L2924/10329 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/1579 , H01L2924/181 , H01L2924/19041 , H05K1/185 , H05K1/186 , H05K3/4644 , H05K2201/10674 , H05K2201/10969 , H01L2224/83 , H01L2224/82 , H01L2924/01014 , H01L2924/00 , H01L2924/01049 , H01L2224/45099 , H01L2224/45015 , H01L2924/207

Abstract: 本发明涉及一种层叠型电子器件，所述层叠型电子器件包括第一半导体芯片，所述第一半导体芯片限定第一主面和与该第一主面相对的第二主面，并在所述第一主面上具有至少一个电极垫。所述层叠型电子器件还包括载体，在所述载体的第一主表面处布置有第一结构化金属层。所述第一结构化金属层经由导电材料的第一接合层接合至所述电极垫，其中所述第一接合层具有小于10μm的厚度。第一绝缘层覆盖在所述载体的第一主表面和所述第一半导体芯片上面。

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