公开(公告)号：EP2133307A3

公开(公告)日：2013-12-04

申请号：EP09161797.7

申请日：2009-06-03

Applicant: CANON KABUSHIKI KAISHA

Inventor： Isano, Taisuke ,  Asano, Kosuke ,  Kaneda, Yasushi

IPC: B81C1/00

CPC classification number: B05D5/00 ,  B81C1/00126 ,  B81C2201/0108 ,  B81C2203/038

Abstract: A method for manufacturing a three-dimensional structure (1) includes forming a first structure (20) having a relief pattern on a substrate (10), forming a sacrifice layer (30) on the first structure such that the sacrifice layer can be filled in a concave part (25) of the first structure and the sacrifice layer can cover a surface (23) of a convex part (22) of the first structure on a side opposite to the substrate, forming a second structure (40) having a relief pattern on the sacrifice layer, and a fourth step of removing the sacrifice layer from between the first structure and the second structure, and thereby bringing the second structure into contact with the surface of the first structure.

Abstract translation: 一种制造三维结构（1）的方法包括在基板（10）上形成具有浮雕图案的第一结构（20），在第一结构上形成牺牲层（30），以便可以填充牺牲层 在所述第一结构的凹部（25）中，所述牺牲层可以覆盖与所述基板相反的一侧的所述第一结构的凸部（22）的表面（23），形成具有 在牺牲层上的浮雕图案，以及从第一结构和第二结构之间移除牺牲层的第四步骤，从而使第二结构与第一结构的表面接触。

公开(公告)号：EP2628708A1

公开(公告)日：2013-08-21

申请号：EP13154830.7

申请日：2013-02-11

Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Inventor： Baillin, Xavier ,  Pornin, Jean-Louis

IPC: B81C1/00

CPC classification number: B81C1/00134 ,  B81B3/0018 ,  B81B7/0038 ,  B81C1/00357 ,  B81C2201/0108 ,  B81C2201/019 ,  B81C2203/0109 ,  B81C2203/0136 ,  B81C2203/0145 ,  H01L21/2007

Abstract: Substrat microélectronique (400) comportant au moins :
- une couche support (102),
- une couche supérieure (106) composée d'au moins un semi-conducteur,
- une couche intermédiaire (104) composée d'au moins un matériau organique et comportant en outre une ou plusieurs portions (402) de matériau diélectrique dont la dureté est supérieure à celle du matériau organique. Ces portions sont disposées dans la couche de matériau organique et ont une épaisseur sensiblement égale à celle de la couche de matériau organique. La couche intermédiaire (104) est apte à être gravé sélectivement par rapport au semi-conducteur de la couche supérieure et est disposée entre la couche support et la couche supérieure. L'invention décrit également un procédé de réalisation d'un dispositif microélectronique dans la couche supérieure du substrat ci-mentionné, ainsi qu'un procédé d'encapsulation de ce dispositif.

Abstract translation: 衬底（100）具有支撑层（102）和顶层（106），其中顶层包括半导体。 层（104）由有机材料即感光树脂制成，能够通过使用干蚀刻相对于顶层的半导体选择性地被蚀刻，并且布置在支撑层和顶层之间。 吸气材料层布置在支撑层和有机材料层之间。 有机材料层中的电介质材料部分形成封闭的轮廓。 还包括以下独立权利要求：（1）微电子基板的制造方法（2）微电子器件的制造方法。

公开(公告)号：EP1760036B1

公开(公告)日：2012-06-13

申请号：EP06126731.6

申请日：2002-11-08

Applicant: WiSpry, Inc.

Inventor： Dereus, Dana, R.

IPC: B81B3/00 ,  H01H59/00

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

公开(公告)号：EP1717195B1

公开(公告)日：2011-09-14

申请号：EP06118802.5

申请日：2002-11-08

Applicant: WiSpry, Inc.

Inventor： Cunningham, Shawn, J. ,  Tatic-Lucic, Svetlana

IPC: B81B3/00

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

公开(公告)号：EP1717194B1

公开(公告)日：2009-05-27

申请号：EP06118800.9

申请日：2002-11-08

Applicant: WiSpry, Inc.

Inventor： Cunningham, Shawn, J. ,  Tatic-Lucic, Svetlana

IPC: B81B3/00

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

公开(公告)号：EP1934133A1

公开(公告)日：2008-06-25

申请号：EP05791165.3

申请日：2005-10-10

Applicant: Silverbrook Research Pty. Ltd

Inventor： SILVERBROOK, Kia

IPC: B81C1/00 ,  B41J2/05 ,  B41J2/16

CPC classification number: B41J2/1404 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2002/14403 ,  B41J2002/14475 ,  B41J2202/11 ,  B81B2201/032 ,  B81B2201/052 ,  B81B2203/0109 ,  B81C1/00611 ,  B81C2201/0108 ,  B81C2201/0126

Abstract: A method of forming a suspended beam in a MEMS process is disclosed. In the process a pit (8) is etched into a substrate (5). Sacrificial material (10) is deposited in the pit (8) and on the surrounding substrate surface. The sacrificial material (10) is then removed from the surrounding substrate surface and from the periphery of the pit (8) so that there is a gap between the sacrificial material and at least two sidewalls of the pit. The sacrificial material is then heated so that it reftows such that the remaining sacrificial material contacts the sidewalls of the pit. Material for the beam (12), which is typically a metal, is then deposited on the substrate surface and the reflowed sacrificial material, and the sacrificial material is then removed to form the suspended beam. The beam could be used as the heating element in an inkjet printer.

公开(公告)号：EP1877863A2

公开(公告)日：2008-01-16

申请号：EP06758354.2

申请日：2006-04-14

Applicant: The President and Fellows of Harvard College

Inventor： LINDER, Vincent ,  GATES, Byron ,  RYAN, Declan ,  AMIRPARVIZ, Babak ,  WHITESIDES, George, M.

IPC: G03F7/00

CPC classification number: B81C1/00246 ,  B81C2201/0108 ,  B81C2203/0735 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

Abstract: The present invention provides fabrication methods using sacrificial materials comprising polymers. In some embodiments, the polymer may be treated to alter its solubility with respect to at least one solvent (e.g., aqueous solution) used in the fabrication process. The preparation of the sacrificial materials is rapid and simple, and dissolution of the sacrificial material can be carried out in mild environments. Sacrificial materials of the present invention may be useful for surface micromachining, bulk micromachining, and other microfabrication processes in which a sacrificial layer is employed for producing a selected and corresponding physical structure.

公开(公告)号：EP1760746A2

公开(公告)日：2007-03-07

申请号：EP06126734.0

申请日：2002-11-08

Applicant: WiSpry, Inc.

Inventor： Dereus, Dana, R.

IPC: H01H59/00 ,  B81B3/00

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: According to one embodiment, a movable MEMS component suspended over a substrate is provided. The component can include a structural layer having a movable electrode separated from a substrate by a gap. The component can also include at least one standoff bump attached to the structural layer and extending into the gap for preventing contact of the movable electrode with conductive material when the component moves. The structural layer is folded.

Abstract translation: 根据一个实施例，提供了一种悬挂在衬底上的可移动MEMS部件。 部件可以包括具有通过间隙与衬底分离的可移动电极的结构层。 部件还可以包括至少一个支座凸块，该支座凸块附接到结构层并且延伸到间隙中以防止当部件移动时可移动电极与导电材料接触。 结构层被折叠。

公开(公告)号：EP1758814A2

公开(公告)日：2007-03-07

申请号：EP05725682.8

申请日：2005-03-15

Applicant: GEORGIA TECH RESEARCH CORPORATION

Inventor： KOHL, Paul, A. ,  AYAZI, Farrokh ,  JOSEPH, Paul Jayachandran

IPC: B81B7/00

CPC classification number: B81C1/00333 ,  B81C2201/0108 ,  B81C2203/0136 ,  B81C2203/0154 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Embodiments of the present disclosure provide systems and methods for producing micro electro-mechanical device packages. Briefly described, in architecture, one embodiment of the system, among others, includes a micro electro-mechanical device formed on a substrate layer; and a thermally decomposable sacrificial structure protecting at least a portion of the micro electro-mechanical device, where the sacrificial structure is formed on the substrate layer and surrounds a has cavity enclosing an active surface of the micro electro-mechanical devices Other systems and methods are also provided.

公开(公告)号：EP1572578A2

公开(公告)日：2005-09-14

申请号：EP03799623.8

申请日：2003-12-18

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE

Inventor： ROBERT, Philippe ,  MICHEL, France ,  MAEDER-PACHURKA, Catherine ,  SILLON, Nicolas

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00611 ,  B81C2201/0108 ,  B81C2201/0125 ,  H01L2924/01082

Abstract: The invention concerns a method which consists in successively depositing a polymeric sacrificial layer (2), depositing, on at least part of the substrate (1) and the front surface of the sacrificial layer (2), an embedding layer (6), with a thickness greater than that of the sacrificial layer (2) and performing planarization such that the front surfaces of the sacrificial layer (2) and of the embedding layer (6) form a common planar surface. A forming layer (3) of a suspended structure (5) is deposited on the front face of the common planar surface. The planarization can include chemical mechanical polishing and etching the embedding layer (6). Etching the sacrificial layer (2) can be performed by means of a mask, formed on the front surface of a polymer material layer, removed during the planarization step.