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公开(公告)号:EP4402721A1
公开(公告)日:2024-07-24
申请号:EP22870489.6
申请日:2022-08-22
Applicant: INTEL Corporation
IPC: H01L25/10 , H01L23/538 , H01L23/00 , H01L25/18
CPC classification number: H01L23/5389 , H01L23/49816 , H01L23/5385 , H01L2924/0001420130101 , H01L2224/4809120130101 , H01L2224/1622520130101 , H01L2924/1816120130101 , H01L2924/18120130101 , H01L24/48 , H01L25/105 , H01L25/0657 , H01L2225/065120130101 , H01L25/0652 , H01L2225/0657220130101 , H01L2225/0651320130101 , H01L2225/0651720130101 , H01L2225/0652420130101 , H01L2225/0654120130101 , H01L2225/0654820130101 , H01L25/50 , H01L21/568 , H01L21/6835 , H01L2221/6835920130101 , H01L2221/6834520130101 , H01L2221/6837220130101 , H01L24/18 , H01L2224/1622120130101 , H01L2224/1718120130101 , H01L24/17
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公开(公告)号:EP4439666A2
公开(公告)日:2024-10-02
申请号:EP24165765.9
申请日:2024-03-25
Applicant: MediaTek Inc.
Inventor: KUO, Che-Hung , YU, Ta-Jen , HUANG, Chi-Hung
IPC: H01L25/10 , H01L25/16 , H01L23/31 , H01L25/065
CPC classification number: H01L25/105 , H01L2225/065120130101 , H01L2225/0656220130101 , H01L2225/102320130101 , H01L2225/104120130101 , H01L2225/105820130101 , H01L2225/103520130101 , H01L23/3128 , H01L24/20 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/16 , H01L25/0657 , H01L25/0655 , H01L25/18 , H01L25/16
Abstract: A semiconductor device is provided. The semiconductor device includes a bottom package (300A) and a top package (400). The top package is mounted on the bottom package. At least one portion (400EP) of the top package protrudes from a sidewall of the bottom package. The semiconductor device further includes a passive device mounted on a protruding region of the portion of the top package.
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公开(公告)号:EP3834227B1
公开(公告)日:2024-09-04
申请号:EP18938731.9
申请日:2018-10-30
IPC: H01L23/31 , H01L21/56 , H01L23/16 , H01L23/433 , H01L23/544 , H01L25/065 , H01L21/98 , H01L23/488 , H01L23/48 , H01L23/49 , H01L21/60
CPC classification number: H01L2223/5443320130101 , H01L23/544 , H01L2223/5448620130101 , H01L23/3128 , H01L23/16 , H01L21/56 , H01L23/4334 , H01L2224/3222520130101 , H01L2224/3214520130101 , H01L2224/4822720130101 , H01L2224/4809120130101 , H01L2224/7321520130101 , H01L2224/7326520130101 , H01L2924/351120130101 , H01L2924/1531120130101 , H01L2224/3224520130101 , H01L2224/9224720130101 , H01L2224/9216520130101 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/92 , H01L25/0657 , H01L25/50 , H01L2225/065120130101 , H01L2225/0656220130101 , H01L2224/4824720130101 , H01L2924/1531220130101 , H01L23/562
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公开(公告)号:EP3832884B1
公开(公告)日:2024-08-14
申请号:EP20207764.0
申请日:2020-11-16
IPC: H01L23/367 , H01L23/482 , H01L23/498 , H01L23/00 , H03F1/02 , H03F3/195 , H03F3/24 , H01L23/66 , H01L23/495
CPC classification number: H03F1/0288 , H03F3/195 , H01L23/66 , H03F2200/22220130101 , H03F2200/38720130101 , H03F2200/45120130101 , H03F3/245 , H01L23/4824 , H01L2223/661120130101 , H01L2224/4824720130101 , H01L2924/1531120130101 , H01L2924/1531320130101 , H01L2224/4822720130101 , H01L2224/1614520130101 , H01L2224/3214520130101 , H01L2225/0651320130101 , H01L2225/065120130101 , H01L2225/0656820130101 , H01L2223/665520130101 , H01L23/3677 , H01L23/49861 , H01L23/49541 , H01L2224/3222720130101 , H01L2224/4911220130101 , H01L2224/4917320130101 , H01L24/48 , H01L2224/7326520130101
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公开(公告)号:EP4391050A1
公开(公告)日:2024-06-26
申请号:EP23192801.1
申请日:2023-08-22
Applicant: Samsung Electronics Co., Ltd.
Inventor: KIM, Junhyoung , KIM, Jiwon , LEE, Minyong , KIM, Dohyung , SUNG, Sukkang
IPC: H01L25/065 , H01L23/485 , H10B43/00 , H01L25/18
CPC classification number: H01L25/0657 , H01L25/18 , H01L24/06 , H01L2225/0656220130101 , H01L2225/0652720130101 , H01L2225/0656520130101 , H01L2225/0654120130101 , H01L2225/065120130101 , H01L24/20 , H10B43/00 , H01L24/08 , H01L24/05
Abstract: The inventive concept provides a chip stack structure including a first semiconductor chip and a second semiconductor chip bonded to each other, and a semiconductor package including a plurality of chip stack structures stacked in a vertical direction. In each chip stack structure, a redistribution layer between pads of the first semiconductor chip and pads of the second semiconductor chip is present.
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