摘要:
A light emitting device in an embodiment includes first and second light transmissive insulators and a light emitting diode arranged between them. First and second electrodes of the light emitting diode are electrically connected to a conductive circuit layer provided on a surface of at least one of the first and second light transmissive insulators. Between the first light transmissive insulator and the second light transmissive insulator, a third light transmissive insulator is embedded which has at least one of a Vicat softening temperature of 80°C or higher and 160°C or lower and a tensile storage elastic modulus of 0.01 GPa or more and 10 GPa or less.
摘要:
A composite material and an electronic device are disclosed in embodiments of the present invention, relating to the field of electronic assembly technologies. The technical problem of the existing electronic device with an excessively complicated internal structure is solved. The composite material includes an electrically and thermally conductive layer, a viscose glue layer, and an insulating layer, where the electrically and thermally conductive layer and the insulating layer are pasted at two sides of the viscose glue layer; and the viscose glue layer is electrically conductive. The electronic device includes a circuit board and the composite material. Gaps are formed at the insulating layer in positions corresponding to electronic components and/or shielding frames, with the viscose glue layer exposed, and the composite material is pasted onto the electronic components and/or the shielding frames via the viscose glue layer. The present invention is applied to simplify the structure of an electronic device.
摘要:
The invention relates to a method for producing an optoelectronic semiconductor component, wherein electric contacts of the subsequent optoelectronic semiconductor component are prevented from contacting foreign particles of a filler.
摘要:
A microelectronic unit 400 can include a semiconductor element 401 having a front surface, a microelectronic semiconductor device adjacent to the front surface, contacts 403 at the front surface and a rear surface remote from the front surface. The semiconductor element 401 can have through holes 410 extending from the rear surface through the semiconductor element 401 and through the contacts 403. A dielectric layer 411 can line the through holes 410. A conductive layer 412 may overlie the dielectric layer 411 within the through holes 410. The conductive layer 412 can conductively interconnect the contacts 403 with unit contacts.
摘要:
An integrated circuit chip (310) includes a top layer of dielectric (320) penetrated by conductive vias (305) connecting electrical contacts (304) within the integrated circuit proper to a network of electrical leads (326) disposed on top of the dielectric layer (320); the network of leads (326), in turn, being connected to an array of contact pads (330) adapted for simultaneous solder connection to a leadframe.
摘要:
An integrated circuit chip (310) includes a top layer of dielectric (320) penetrated by conductive vias (305) connecting electrical contacts (304) within the integrated circuit proper to a network of electrical leads (326) disposed on top of the dielectric layer (320); the network of leads (326), in turn, being connected to an array of contact pads (330) adapted for simultaneous solder connection to a leadframe.
摘要:
The invention provides a compound of formula I wherein A is a C 1 -C 4 straight or branched alkylene chain which may be saturated or unsaturated,
B is a C 2 -C 4 straight or branched alkylene chain which may be saturated or unsaturated, Ar is a phenyl or naphthyl group which may be substituted or unsubstituted, R and R 2 are the same or different and are hydrogen, alkyl, alkoxy, alkoxyalkyl, hydroxyalkyl, hydroxy, halogen, nitro, carboxy, carboxylic ester, carbamoyl, carbamoyloxy, cyano, acyl, acylamino or trifluoromethyl, or an acid addition salt thereof.
The compounds are useful for the treatment of ulcers or hypersecretion in mammals. Pharmaceutical compositions containing the novel compounds and processes for their preparation are described.
摘要:
The invention relates to a multilayer semiconductor integrated circuit device which is provided with a smaller space for a three-dimensional multilayer configuration at a lower cost and with a sufficient power supply quality. A first semiconductor integrated circuit device is provided with a first penetrating semiconductor region that penetrates through the first semiconductor body in the thickness direction and that is connected to the first power supply potential, and a second penetrating semiconductor region that penetrates through the first semiconductor body in the thickness direction and that is connected to the second power supply potential. A second semiconductor integrated circuit device having a first electrode and a second electrode is layered on top of the first semiconductor integrated circuit device so that the first electrode and the second electrode are respectively connected to the first penetrating semiconductor region and the second penetrating semiconductor region.
摘要:
The invention relates to a multilayer semiconductor integrated circuit device which is provided with a smaller space for a three-dimensional multilayer configuration at a lower cost and with a sufficient power supply quality. A first semiconductor integrated circuit device is provided with a first penetrating semiconductor region that penetrates through the first semiconductor body in the thickness direction and that is connected to the first power supply potential, and a second penetrating semiconductor region that penetrates through the first semiconductor body in the thickness direction and that is connected to the second power supply potential. A second semiconductor integrated circuit device having a first electrode and a second electrode is layered on top of the first semiconductor integrated circuit device so that the first electrode and the second electrode are respectively connected to the first penetrating semiconductor region and the second penetrating semiconductor region.