Abstract:
A method of polymeric coating from sidewalls of en etched trench defined in silicon wafer [5] was provided The method comprises etching the wafer in a biased plasma etching chamber using 02 plasma. The chamber temperature is in the range of 90-180 deg C.
Abstract:
A method for fabricating a membrane (50) having a corrugated, multi-layer structure, comprising the steps of: providing a substrate (20) having an insulator layer (30) on the top surface of the substrate (20), a conductive layer (40) on the insulator layer, a sacrificial layer (206) on said conductive layer (40), and a second conductive layer (202); patterning a series of etch holes (205) in the second conductive layer (202) to allow release etchant to have access to a second sacrificial layer (206) ; depositing the second sacrificial layer (206) onto said second conductive layer (202) so that the series of holes (205) are filled with the second sacrificial layer (206) ; patterning the second sacrificial layer with a radial and/or concentric grid pattern so that a third conductive layer (201) when deposited will form the support structure and top portion of the corrugated structure; depositing the third conductive layer (201) so that the grid pattern is filled in and is in contact with the second conductive layer (202) and; removing the first and second sacrificial layers (206) by immersing the device in a release etchant.
Abstract:
The present disclosure pertains to our discovery of a particularly efficient method for etching a multi-part cavity in a substrate. The method provides for first etching a shaped opening, depositing a protective layer over at least a portion of the inner surface of the shaped opening, and then etching a shaped cavity directly beneath and in continuous communication with the shaped opening. The protective layer protects the etch profile of the shaped opening during etching of the shaped cavity, so that the shaped opening and the shaped cavity can be etched to have different shapes, if desired. In particular embodiments of the method of the invention, lateral etch barrier layers and/or implanted etch stops are also used to direct the etching process. The method of the invention can be applied to any application where it is necessary or desirable to provide a shaped opening and an underlying shaped cavity having varying shapes. The method is also useful whenever it is necessary to maintain tight control over the dimensions of the shaped opening.
Abstract:
Fluidic cartridges, and manufacture thereof, having a plurality of circuit element subtypes containing pneumatically operated diaphragm members, where the diaphragm materials are selected for yield point, chemical resistance, breathability and other properties individually according to the fluidic element subtype are provided. A process of in-situ edge-bonded decoupage for forming diaphragm members inside a cartridge, and fluidic circuits having diaphragm members as active and passive circuit elements, including pumps, valves, vents, waste receptacles, reagent reservoirs, and cuvettes with optical windows, where the material composition of each individual diaphragm member may be selected from an assortment of materials during manufacture are also provided.
Abstract:
We describe a method of layer-by-layer deposition of a plurality of layers of material onto the wall or walls of a channel of a microfluidic device, the method comprising: loading a tube with a series of segments of solution, a said segment of solution bearing a material to be deposited; coupling said tube to said microfluidic device; and injecting said segments of solution into said microfluidic device such that said segments of solution pass, in turn, through said channel depositing successive layers of material to perform said layer-by-layer deposition onto said wall or walls of said channel. Embodiments of the methods are particularly useful for automated surface modification of plastic, for example PDMS (Poly(dimethylsiloxane)), microchannels. We also describe methods and apparatus for forming double-emulsions.
Abstract:
A thermal bend actuator ( 6 ) is provided with a group of upper arms ( 23, 25, 26 ) and a group of lower arms ( 27, 28 ) which are non planar, so increasing the stiffness of the arms. The arms ( 23, 25, 26,27,28 ) may be spaced transversely of each other and do not overly each other in plan view, so enabling all arms to be formed by depositing a single layer of arm forming material