摘要:
Sintered silicon carbide composites containing diamond crystals are described. They are made through a process comprising:
(a) forming a first dispersion of diamond crystals and carbon black in paraffin; (b) forming a second dispersion of carbon fiber, carbon black and filler in paraffin; (c) compacting said dispersions together to produce an integral bi-layer composite; (d) subjecting said composite to a vacuum for a period of time at a temperature sufficient to vaporize essentially all of said paraffin; (e) heating silicon to cause liquefaction and direct infiltration into both layers of said composite; and (f) sintering the composite containing silicon under conditions sufficient to produce a β-silicon carbide binder uniting said composite.
The resultant composites are particularly useful as cutting materials and/or wear components, where they exhibit extreme wear resistance.
摘要:
The present invention relates to a method of producing porous alpha-SiC containing shaped body and porous alpha-SiC containing shaped body produced by that method. The porous alpha-SiC containing shaped body shows a characteristic microstructure providing a high degree of mechanical stability.
摘要:
Disclosed is a method for providing a crystalline ceramic material. In an example, the method includes providing a silicon-containing preceramic polymer material that can be thermally converted to one or more crystalline polymorphs. The silicon-containing preceramic polymer material includes dispersed therein an effective amount of dopant particles. The silicon-containing preceramic polymer material is then thermally converted to the silicon-containing ceramic material. The effective amount of dopant particles enhance the formation of at least one of the one or more crystalline polymorphs, relative to the silicon-containing preceramic polymer without the dopant particles, with respect to at least one of formation of a selected polymorph of the one or more crystalline polymorphs formed, an amount formed of a selected polymorph of the one or more crystalline polymorphs formed, and a temperature of formation of the one or more crystalline polymorphs.
摘要:
The invention is characterized in that, in a silicon nitride substrate comprising a grain boundary phase with silicon nitride crystal particles and having a heat conductivity of 50W/m·K or greater, the sectional structure of the silicon nitride substrate has a ratio (T2/T1) of 0.01 to 0.30 between the thickness T1 of the silicon nitride substrate and the total length T2 of the grain boundary phase in the thickness direction, and a variation in the dielectric strength of 15% or less from the mean value, as measured by the four terminal method, in which electrodes are brought into contact with the front and the back of the substrate. In addition, a dielectric strength mean value of 15 kv/mm or greater is desirable. According to this constitution, the silicon nitride substrate having a small dielectric strength variation, and the silicon nitride circuit substrate using the same, are obtained.
摘要:
A silicon carbide based material exhibiting high strength, good thermal shock resistance, high resistance to abrasion and being chemically stable to harsh environmental conditions is described. The carbide Ball Hill ceramic comprises a β-SiAlON bonding phase in which sintering is facilitated by at least one rare earth oxide sintering agents incorporated within the Vibrating Sieve batch admixture as starting materials. The residual rare earth sintering aid being chosen so as to impart good mechanical and refractory properties.
摘要:
There is disclosed a honeycomb structure capable of using as a catalyst carrier and also suitably functions as a heater by applying a voltage, and where a bonding layer to bond honeycomb segments together is hard to break and an electrical resistance value is hard to rise. The honeycomb structure includes a honeycomb segment bonded body 4 in which a plurality of honeycomb segments 6 are bonded together by a bonding layer 7, and a pair of electrode members 21 disposed on a side surface 5 of the honeycomb segment bonded body 4, each of the pair of electrode members 21 is formed into a band shape extending in an extending direction of cells 2 of the honeycomb segments 6, and in a cross section perpendicular to the extending direction of the cells 2, one electrode member 21 is disposed on an opposite side across the center of the honeycomb segment bonded body 4 to another electrode member 21, and in at least a part of the bonding layer 7, inorganic fibers made of β-SiC and a metal silicide are included in a porous body where particles of silicon carbide are bound with silicon as a binding material in a state where pores are held among the particles.