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489 条记录 (耗时 0.021 秒)

    Process chamber with inner support
    42.
    发明公开
    Process chamber with inner support 失效
    与内部支持的处理室

    公开(公告)号：EP1036860A3

    公开(公告)日：2000-12-06

    申请号：EP00202096.4

    申请日：1996-08-01

    申请人： ASM America, Inc.

    发明人： Wengert, John F. ,  Jacobs, Loren R. ,  Halpin, Michael W. ,  Foster, Derrick W. ,  van der Jeugd, Cornelis A. ,  Vyne, Robert M. ,  Hawkins, Mark R.

    IPC分类号： C23C16/44 ,  C23C16/46 ,  C23C16/48 ,  B01J3/00 ,  C23C16/455

    CPC分类号： B01J3/006 ,  C23C16/44 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/46 ,  C23C16/481 ,  H01L21/67115 ,  H01L21/68735 ,  H01L21/68785

    摘要： There is provided a chemical vapor deposition apparatus comprising a structure defining a chamber having an area for horizontal positioning of a substrate, and having chamber walls for conducting a flow of gas across a surface of the substrate, said chamber having a gas inlet extending generally laterally across the width of the chamber structure; and a gas injector abutting the chamber structure adjacent said inlet, and including a plurality of gas supply passages, a gas inlet manifold connected to each of said passages, a separately adjustable metering valve apportioning flow through each of said passages, each of said passages having an outlet portion configured to cause the gas flow through the passage to diverge laterally into an expanded gas stream separated from adjacent streams, said injector further including walls that direct the gas streams into generally flat in edge-to-edge relation towards said chamber gas inlet, said chamber inlet being without partitions dividing the streams so that an edge of any one stream can mix with an edge of an adjacent stream.

    摘要翻译： 提供了一种化学气相沉积装置，其包括限定腔室的结构，所述腔室具有用于基底的水平定位的区域，并且具有用于引导气体流过基底表面的腔室壁，所述腔室具有通常横向延伸的气体入口 横跨腔室结构的宽度; 以及气体喷射器，所述气体喷射器邻近所述入口邻接所述腔室结构并且包括多个气体供应通道，连接到每个所述通道的气体入口歧管，分别可调节的计量阀，分配流量通过每个所述通道，每个所述通道具有 出口部分，所述出口部分被配置为使通过所述通道的气流横向地发散成与相邻流分离的膨胀气流，所述喷射器进一步包括壁，所述壁将所述气流朝向所述腔室气体入口以大致平直的边缘对边缘关系 ，所述室入口没有划分所述流的隔板，使得任何一个流的边缘可以与相邻流的边缘混合。

    Process chamber with inner support
    43.
    发明公开
    Process chamber with inner support 失效
    与内部支持的处理室

    公开(公告)号：EP1046728A2

    公开(公告)日：2000-10-25

    申请号：EP00202097.2

    申请日：1996-08-01

    申请人： ASM America, Inc.

    发明人： Wengert, John F. ,  Jacobs, Loren R ,  Halpin, Michael W ,  Foster, Derrick W ,  Van Der Jeugd, Cornelius A ,  Vyne, Robert M. ,  Hawkins, Mark R.

    IPC分类号： C23C16/44 ,  C23C16/46 ,  C23C16/48

    CPC分类号： C23C16/45502 ,  B01J3/006 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  C23C16/481 ,  H01L21/67115 ,  H01L21/68785

    摘要： There is provided an apparatus for chemical vapor deposition, comprising: walls defining a deposition chamber having a deposition gas inlet at an upstream end and a gas outlet on a downstream end; a susceptor positioned in the chamber between the gas inlet and the gas outlet for receiving a semiconductor substrate for vapor deposition purposes; and a plate positioned in said chamber between the susceptor and said gas outlet, said plate extending across a substantial portion of the chamber, the chamber wall adjacent said plate being generally transparent to radiation energy, and said plate being a good absorber of radiation energy so that unused deposition gas will deposit more readily on the plate than on the chamber wall.

    摘要翻译： 提供了一种用于化学气相沉积的设备，包括：限定沉积室的壁，所述沉积室在上游端处具有沉积气体入口且在下游端具有气体出口; 位于所述气体入口和所述气体出口之间的腔室中的基座，用于接收用于气相沉积目的的半导体基板; 以及位于基座和所述气体出口之间的所述腔室中的板，所述板延伸穿过腔室的大部分，邻近所述板的腔室壁对辐射能大体上是透明的，并且所述板是辐射能的良好吸收器，因此 未使用的沉积气体将更容易沉积在板上而不是室壁上。

    REFLECTIVE SURFACE FOR CVD REACTOR WALLS
    45.
    发明公开
    REFLECTIVE SURFACE FOR CVD REACTOR WALLS 失效
    反射面的CVD反应器壁

    公开(公告)号：EP0996767A1

    公开(公告)日：2000-05-03

    申请号：EP98934389.2

    申请日：1998-07-09

    申请人： ADVANCED SEMICONDUCTOR MATERIALS AMERICA, INC.

    发明人： OLSEN, Aage ,  HALPIN, Michael, W.

    IPC分类号： C23C16/48 ,  H05B3/00 ,  F21V7/22 ,  G02B5/02 ,  H01L21/00

    CPC分类号： G02B5/0215 ,  C23C14/12 ,  C23C14/28 ,  C23C16/481 ,  C30B25/105 ,  C30B31/12 ,  G02B5/0221 ,  G02B5/0268 ,  G02B5/0284

    摘要： A reflector plate (100) is provided for scattering radiant heat energy in a semiconductor processing reactor chamber to achieve uniform temperature across a substrate to be processed. The surface (104) is characterized by a plurality of adjoining depressions (106) with substantially no planar sections among the depressions. The width to depth ratio for the depressions averages over 3:1. Crests separating the depressions define an angle of greater than about 60°, thus providing a relatively smooth texture for the reflecting surface. The reflecting surface is thus easy to clean. A method of manufacturing the reflector plate comprises removing material from a planar metal surface by ball-end milling. The depth of each depression and degree of overlap with adjacent depressions can randomly vary within selected ranges. A highly specular finish is then provided on the stippled surface by gold electroplating.

    RAPID THERMAL PROCESSING APPARATUS AND METHOD
    46.
    发明授权
    RAPID THERMAL PROCESSING APPARATUS AND METHOD 失效
    方法和设备快速热处理

    公开(公告)号：EP0797753B1

    公开(公告)日：1999-03-24

    申请号：EP95928925.7

    申请日：1995-08-28

    申请人： VORTEK INDUSTRIES LTD.

    发明人： CAMM, David, Malcolm

    IPC分类号： F27B17/00 ,  H01L21/00 ,  C23C16/48

    CPC分类号： H01L21/67115 ,  C23C16/481 ,  F27B17/0016

    摘要： An apparatus and method for rapidly and uniformly heating a workpiece (12) includes a plurality of walls defining a first chamber (20), a first source of radiation (44) for producing incident radiation on a first energy transfer surface of the workpiece (19), a holder for holding the workpiece in a workpiece plane in the chamber and a radiation absorbing surface on at least one wall of the chamber (22, 24, 26). The holder has an energy transfer surface, the energy surfaces of the holder and of the workpiece reflecting and emitting radiation in the chamber and the radiation absorbing surface absorbing non-incident radiation reflected and emitted from the energy transfer surfaces.

    Radiantly heated reactor
    47.
    发明公开
    Radiantly heated reactor 失效
    Reaktor mit Strahlungsheizung

    公开(公告)号：EP0872574A2

    公开(公告)日：1998-10-21

    申请号：EP98110339.3

    申请日：1991-08-14

    申请人： Applied Materials, Inc.

    发明人： Anderson, Roger N. ,  Deacon, Thomas E. ,  Carlson, David K.

    IPC分类号： C23C16/48 ,  H01L21/00

    CPC分类号： H01L21/67115 ,  C23C16/481

    摘要： A reflector array (25) employing a number of linear, tubular heater lamps (27) arranged in a circle concentric with the substrate (5) to be heated. Some of the lamps (27) have focusing reflectors (31) and the remainder have dispersive reflectors.

    摘要翻译： 一种反射器阵列（25），其采用与待加热的基板（5）同心的多个线性管状加热灯（27）。 一些灯（27）具有聚焦反射器（31），其余的具有分散反射器。

    Method and apparatus for preventing condensation in an exhaust passage
    49.
    发明公开
    Method and apparatus for preventing condensation in an exhaust passage 失效
    装置和方法，用于防止冷凝的排气管线

    公开(公告)号：EP0870852A1

    公开(公告)日：1998-10-14

    申请号：EP98302858.0

    申请日：1998-04-14

    申请人： Applied Materials, Inc.

    发明人： Comita, Paul B. ,  Carlson, David K. ,  Riley, Norma B. ,  Fan, Doria W. ,  Ranganathan, Rekha

    IPC分类号： C23C16/44 ,  C23C16/48

    CPC分类号： C23C16/4408 ,  C23C16/4412 ,  C23C16/481 ,  C30B25/14 ,  C30B31/16

    摘要： A single wafer reactor (210) having a vented lower liner (284) for heating exhaust gas is disclosed. The apparatus includes a reaction chamber (212). A wafer support member (220) which divides the chamber into an upper (222) and lower portion (224) is positioned within the chamber (212). A gas outlet (232) for exhausting gas from the chamber (212) has a vent to exhaust gas from the lower portion (224) of the chamber (212) and an exhaust passage (300) opening to exhaust gas from the upper portion (222) of the chamber (212). Heated inert purge gas is fed from the lower chamber portion (224) through the vent at a rate so as to prevent the deposition gas from condensing in the exhaust passage (300).

    摘要翻译： 具有用于加热废气通气下部衬里（284）单晶片反应器（210）被游离缺失盘。 该装置包括一个反应室（212）。 的晶片支撑构件（220）在其中上部（222）将所述腔室分成和下部部分（224）在腔室（212）内的位置。 用于从腔室（212）排出气体的气体出口（232）有一个排气口，以从所述腔室（212）和排出通道（300）开口，以从上部排气的下部（224）排出气体（ 222）腔室（212）的。 加热的惰性吹扫气体通过所述通气口的下腔室部分（224）以一定的速率送入，从而防止沉积气体从排气通路（300）冷凝。