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    SYSTEM AND METHOD FOR POLYCRYSTALLINE SILICON DEPOSITION
    45.
    发明公开
    SYSTEM AND METHOD FOR POLYCRYSTALLINE SILICON DEPOSITION 审中-公开
    系统和方法的多晶硅的存款

    公开(公告)号：EP2547624A2

    公开(公告)日：2013-01-23

    申请号：EP11757050.7

    申请日：2011-03-18

    申请人： GTAT Corporation

    发明人： QIN, Wenjun

    IPC分类号： C01B33/035 ,  C23C16/24 ,  B01J19/26 ,  C30B29/06

    CPC分类号： C23C16/45506 ,  C01B33/035 ,  C23C16/24 ,  C23C16/4418 ,  C23C16/45563 ,  C23C16/52

    摘要： A method for making polycrystalline silicon from a gas comprising at least one silicon precursor compound is disclosed. The method can be effected from a gas comprising a polycrystalline silicon precursor compound in a chemical vapor deposition system by establishing a first flow pattern of the gas in a chemical vapor deposition reaction chamber, promoting reaction of at least a portion of the at least one precursor compound from the gas having the first flow pattern into polycrystalline silicon, establishing a second flow pattern of the gas in the reaction chamber, and promoting reaction of at least a portion of the at least one precursor compound from the gas having the second flow pattern into polycrystalline silicon. The chemical vapor deposition system can comprise a gas source comprising a gas with at least one precursor compound; a reaction chamber at least partially defined by a base plate and a bell jar; a first nozzle group disposed in one of the base plate and the bell jar, the first nozzle group fluidly connected to the gas source through a first manifold and a first flow regulator; a second nozzle group including a plurality of nozzles disposed in one of the base plate and the bell jar, the plurality of nozzles fluidly connected to the gas source through a second manifold and a second flow regulator.

    METHODS FOR PREPARATION OF HIGH-PURITY POLYSILICON RODS USING A METALLIC CORE MEANS
    47.
    发明公开
    METHODS FOR PREPARATION OF HIGH-PURITY POLYSILICON RODS USING A METALLIC CORE MEANS 有权
    VERFAHRENFÜRDIE HERSTELLUNG VON STANGEN AUS HOCHREINEM POLYSILICIUM MITTELS METALLKERN

    公开(公告)号：EP2027303A4

    公开(公告)日：2012-02-29

    申请号：EP07746605

    申请日：2007-05-21

    申请人： KOREA RES INST CHEM TECH

    发明人： KIM HEE YOUNG ,  YOON KYUNG KOO ,  PARK YONG KI ,  MOON SANG JIN ,  CHOI WON CHOON

    IPC分类号： C23C16/24

    CPC分类号： C23C16/4581 ,  C01B33/035 ,  C23C16/24 ,  Y10T428/2913

    摘要： A method for preparing a polysilicon rod using a metallic core means, including: installing a core means in an inner space of a deposition reactor used for preparing a silicon rod, the core means being constituted by forming at least one separation layer on the surface of a metallic core element and being connected to an electrode means, heating the core means by supplying electricity through the electrode means, and supplying a reaction gas into the inner space for silicon deposition, thereby forming a deposition output in an outward direction on the surface of the core means. The deposition output and the core means can be separated easily from the silicon rod output obtained by the process of silicon deposition, and the contamination of the deposition output caused by impurities of the metallic core element can be minimized, thereby a high-purity silicon can be prepared more economically and conveniently.

    摘要翻译： 一种使用金属芯装置制备多晶硅棒的方法，包括：将芯装置安装在用于制备硅棒的沉积反应器的内部空间中，所述芯装置通过在至少一个分离层的表面上形成 金属芯元件，与电极装置连接，通过电极装置供电来加热芯装置，并将反应气体供应到用于硅沉积的内部空间中，从而在表面上形成向外的沉积输出 核心手段。 沉积输出和芯装置可以容易地从通过硅沉积过程获得的硅棒输出分离，并且可以最小化由金属芯元件的杂质引起的沉积输出的污染，从而高纯度的硅可以 准备更经济，便捷。