公开(公告)号：EP3052429A1

公开(公告)日：2016-08-10

申请号：EP14777233.9

申请日：2014-09-15

Applicant: Cavendish Kinetics, Inc.

Inventor： RENAULT, Mickael

IPC: B81C1/00

CPC classification number: B81C1/0038 ,  B81C1/00801 ,  B81C2201/0108 ,  B81C2201/0176 ,  B81C2201/053

Abstract: The present invention generally relates to a method for forming a MEMS device and a MEMS device formed by the method. When forming the MEMS device, sacrificial material is deposited around the switching element within the cavity body. The sacrificial material is eventually removed to free the switching element in the cavity. The switching element has a thin dielectric layer thereover to prevent etchant interaction with the conductive material of the switching element. During fabrication, the dielectric layer is deposited over the sacrificial material. To ensure good adhesion between the dielectric layer and the sacrificial material, a silicon rich silicon oxide layer is deposited onto the sacrificial material before depositing the dielectric layer thereon.

公开(公告)号：EP1934133A4

公开(公告)日：2012-09-26

申请号：EP05791165

申请日：2005-10-10

Applicant: SILVERBROOK RES PTY LTD

Inventor： SILVERBROOK KIA

IPC: B81C1/00 ,  B41J2/05 ,  B41J2/14 ,  B41J2/16

CPC classification number: B41J2/1404 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2002/14403 ,  B41J2002/14475 ,  B41J2202/11 ,  B81B2201/032 ,  B81B2201/052 ,  B81B2203/0109 ,  B81C1/00611 ,  B81C2201/0108 ,  B81C2201/0126

公开(公告)号：EP2216289A1

公开(公告)日：2010-08-11

申请号：EP07823028.1

申请日：2007-11-02

Applicant: Ikerlan Centro de Investigaciones Tecnológicas, S.Coop.

Inventor： FERNÁNDEZ LEDESMA, Luis José ,  TIJERO SERNA, María

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C3/001 ,  B01L3/50273 ,  B01L3/502738 ,  B01L3/502746 ,  B81B2201/054 ,  B81C2201/0108 ,  B81C2203/037 ,  F16K99/0001 ,  F16K99/0015 ,  F16K2099/0074 ,  F16K2099/0094

Abstract: SUMMARY
The present invention refers to a procedure for the manufacture of micro-nanofluidic devices for flow control such as microvalves, micropumps and flow regulators, using a photodefinable polymer and an elastomer as structural materials and to the micro-nanofluidic devices for flow control obtained by said procedure.

Abstract translation: 发明内容本发明涉及一种程序，用于流控制的微纳米流体装置的制造：如微阀，微型泵和流量调节器，使用光可限定的聚合物和多的弹性体作为结构材料和通过如下获得的用于流控制的微纳米流体装置 说的过程。

公开(公告)号：EP2133307A2

公开(公告)日：2009-12-16

申请号：EP09161797.7

申请日：2009-06-03

Applicant: CANON KABUSHIKI KAISHA

Inventor： Isano, Taisuke ,  Asano, Kosuke ,  Kaneda, Yasushi

IPC: B81C1/00

CPC classification number: B05D5/00 ,  B81C1/00126 ,  B81C2201/0108 ,  B81C2203/038

Abstract: A method for manufacturing a three-dimensional structure (1) includes forming a first structure (20) having a relief pattern on a substrate (10), forming a sacrifice layer (30) on the first structure such that the sacrifice layer can be filled in a concave part (25) of the first structure and the sacrifice layer can cover a surface (23) of a convex part (22) of the first structure on a side opposite to the substrate, forming a second structure (40) having a relief pattern on the sacrifice layer, and a fourth step of removing the sacrifice layer from between the first structure and the second structure, and thereby bringing the second structure into contact with the surface of the first structure.

公开(公告)号：EP1544161B1

公开(公告)日：2009-01-14

申请号：EP03766675.7

申请日：2003-07-31

Applicant: NIKON CORPORATION

Inventor： ISHIZUYA, Tohru, NIKON CORPORATION

IPC: B81B3/00 ,  G02B26/08

CPC classification number: B81B3/0072 ,  B81C2201/0108 ,  G02B6/3518 ,  G02B6/3546 ,  G02B6/3572 ,  G02B6/3584 ,  G02B6/3596 ,  Y10S438/926

Abstract: A three-dimensional structure element having a plurality of three-dimensional structural bodies and capable of being uniformly formed without producing a dispersion in shape of the three-dimensional structural bodies, comprising a substrate (11) and the three-dimensional structural bodies (1) disposed in predetermined effective area (20) on the substrate (11); the three-dimensional structural bodies (1) further comprising space parts formed in the clearances thereof from the substrate (11) by removing sacrificing layers, the substrate (11) further comprising a dummy area (21) having dummy structural bodies (33) so as to surround the effective area (20), the dummy structural body (33) further comprising space parts formed in the clearances thereof from the substrate (11) by removing the sacrificing layers, whereby since the dummy area (21) is heated merely to approx. the same temperature as the effective area (20) in an ashing process for removing the sacrificing layers to prevent a temperature distribution from occurring in the effective area (20).

公开(公告)号：EP1721866B1

公开(公告)日：2008-12-10

申请号：EP06116530.4

申请日：2002-11-08

Applicant: WiSpry, Inc.

Inventor： Cunningham, Shawn, J. ,  Dereus, Dana R. ,  Sett, Subham ,  Tatic-Lucic, Svetlana

IPC: B81B3/00

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

公开(公告)号：EP1900679A1

公开(公告)日：2008-03-19

申请号：EP07116290.3

申请日：2007-09-13

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE

Inventor： Casset, Fabrice ,  Soulimane, Sofian

IPC: B81B3/00 ,  H01G5/16

CPC classification number: B81C1/00158 ,  B81B2203/0109 ,  B81C1/00103 ,  B81C2201/0108 ,  H01G5/011 ,  H01G5/18

Abstract: L'invention concerne un procédé de réalisation d'une couche sacrificielle, comprenant les étapes de :
- lithographie d'une résine déposée sur un substrat pour fournir un motif de résine lithographiée sur une zone de substrat, la zone ayant une taille donnée et une forme donnée, le motif occupant un volume donné,
- recuit selon un cycle thermique du motif de résine lithographiée,
le procédé étant caractérisé en ce qu'il comprend, en fonction de la résine, la détermination de la taille et de la forme de ladite zone du substrat, et la détermination du volume de la résine déposée sur ladite zone pour que le cycle thermique de recuit fournisse un profil choisi parmi l'un des profils suivants : un profil bombé planarisant et un profil en « double air gap ».

Abstract translation: 该方法包括基于热循环退火光刻树脂图案。 基于树脂确定硅衬底（20）的区域的尺寸和形状。 确定沉积在区域上的树脂的体积，使得热循环提供选自平坦化膨胀和双气隙部分中的部分，其中该部分具有用作支撑物的牺牲层以形成悬浮元件，例如， 可变电容器。 尺寸，形状和体积由元件的共振频率的定界确定，以限定将元件与区域分开的间隔。

公开(公告)号：EP1398831A3

公开(公告)日：2008-02-20

申请号：EP03255695.3

申请日：2003-09-11

Applicant: Shipley Co. L.L.C.

Inventor： Gallagher, Michael K. ,  Gronbeck, Dana A. ,  Adams, Timothy G. ,  Calvert, Jeffrey M.

IPC: H01L21/768 ,  H01L21/764 ,  H01L23/522 ,  H01L23/532

CPC classification number: B81B7/0006 ,  B81B2203/0315 ,  B81C2201/0108 ,  H01L21/764 ,  H01L21/7682 ,  H01L23/5222 ,  H01L2924/0002 ,  Y10T428/24628 ,  H01L2924/00

Abstract: A method of forming air gaps within a solid structure is provided. In this method, a sacrificial material is covered by an overlayer. The sacrificial material is then removed through the overlayer to leave an air gap. Such air gaps are particularly useful as insulation between metal lines in an electronic device such as an electrical interconnect structure. Structures containing air gaps are also provided.

公开(公告)号：EP1717195A1

公开(公告)日：2006-11-02

申请号：EP06118802.5

申请日：2002-11-08

Applicant: WiSpry, Inc.

Inventor： Cunningham, Shawn, J. ,  Tatic-Lucic, Svetlana

IPC: B81B3/00

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: Trilayered Beam MEMS Device and Related Methods. According to one embodiment, a method for fabricating a trilayered beam is provided. The method can include depositing a sacrificial layer on a substrate and depositing a first conductive layer on the sacrificial layer. The method can also include forming a first conductive microstructure by removing a portion of the first conductive layer. Furthermore, the method can include depositing a structural layer on the first conductive microstructure, the sacrificial layer, and the substrate and forming a via through the structural layer to the first conductive microstructure. Still furthermore, the method can include the following: depositing a second conductive layer on the structural layer and in the via; forming a second conductive microstructure by removing a portion of the second conductive layer, wherein the second conductive microstructure electrically communicates with the first conductive microstructure through the via; and removing a sufficient amount of the sacrificial layer so as to separate the first conductive microstructure from the substrate, wherein the structural layer is supported by the substrate at a first end and is freely suspended above the substrate at an opposing second end.

Abstract translation: 三层梁MEMS器件及相关方法。 根据一个实施例，提供一种制造三层梁的方法。 该方法可以包括在衬底上沉积牺牲层并在牺牲层上沉积第一导电层。 该方法还可以包括通过去除第一导电层的一部分来形成第一导电微结构。 此外，该方法可以包括在第一导电微结构，牺牲层和衬底上沉积结构层，并且通过结构层将通孔形成到第一导电微结构。 此外，该方法可以包括以下：在结构层和通孔中沉积第二导电层; 通过去除所述第二导电层的一部分来形成第二导电微结构，其中所述第二导电微结构通过所述通孔与所述第一导电微结构电连通; 并且去除足够量的牺牲层以便将第一导电微结构与衬底分开，其中结构层在第一端由衬底支撑并且在相对的第二端处自由地悬挂在衬底上方。

公开(公告)号：EP1717194A1

公开(公告)日：2006-11-02

申请号：EP06118800.9

申请日：2002-11-08

Applicant: WiSpry, Inc.

Inventor： Cunningham, Shawn, J. ,  Tatic-Lucic, Svetlana

IPC: B81B3/00

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: Trilayered Beam MEMS Device and Related Methods. According to one embodiment, a method for fabricating a trilayered beam is provided. The method can include depositing a sacrificial layer on a substrate and depositing a first conductive layer on the sacrificial layer. The method can also include forming a first conductive microstructure by removing a portion of the first conductive layer. Furthermore, the method can include depositing a structural layer on the first conductive microstructure, the sacrificial layer, and the substrate and forming a via through the structural layer to the first conductive microstructure. Still furthermore, the method can include the following: depositing a second conductive layer on the structural layer and in the via; forming a second conductive microstructure by removing a portion of the second conductive layer, wherein the second conductive microstructure electrically communicates with the first conductive microstructure through the via; and removing a sufficient amount of the sacrificial layer so as to separate the first conductive microstructure from the substrate, wherein the structural layer is supported by the substrate at a first end and is freely suspended above the substrate at an opposing second end.

Abstract translation: 三层束MEMS器件及相关方法。 根据一个实施例，提供了一种用于制造三层光束的方法。 该方法可以包括在衬底上沉积牺牲层并且在牺牲层上沉积第一导电层。 该方法还可以包括通过去除第一导电层的一部分来形成第一导电微结构。 此外，该方法可以包括在第一导电微结构，牺牲层和衬底上沉积结构层，并且形成穿过结构层到达第一导电微结构的通孔。 此外，该方法可以包括以下步骤：在结构层上和通孔中沉积第二导电层; 通过去除所述第二导电层的一部分来形成第二导电微结构，其中所述第二导电微结构通过所述通孔与所述第一导电微结构电连通; 以及去除足够量的牺牲层以便将第一导电微结构与衬底分离，其中结构层在第一端处由衬底支撑并且在相对的第二端处自由地悬挂在衬底上方。