Abstract:
A method of manufacturing an electronic device, particularly an acceleration sensor, comprising providing a wafer (10) having first and second semiconductor layers (12,16) with a buried oxide layer (14) therebetween and forming a semiconductor device (such as a detection circuit) on one side of the wafer (10) in the first semiconductor layer (16) and a micro-electromechanical systems (MEMS) device on the opposite side of the wafer (10) in the second semi-conductor layer (12).
Abstract:
The invention relates to methods for producing insulation structures for micromechanical sensors according to a monocrystalline surface technique. According to known methods, silicon structures defined by deep trenches are etched and the lower side thereof facing the substrate is exposed by a release etch step. The filling of said trenches with a dielectrically insulating material, such as silicon dioxide, enables the silicon structure to be solidly clutched on three sides. The invention is based on the fact that instead of filling trenches, thin-walled silicon is converted into an electrically non-conductive material. This can be carried out, for example, by means of thermal oxidation of narrow silicon sections previously exposed by trenches. In a minimal configuration, two trenches (holes) must be etched per section with the desired structural depth. The interlying silicon section must be narrow enough to be able to be fully thermally oxidised.
Abstract:
An inertial sensor includes a sensing portion (10) having a weight (12) supported by beams (13), the weight (12) being a movable portion, and a weight stopper (16) that limits a movable range of the weight (12), the weight stopper (16) being arranged in a vicinity of the weight (12) with a given clearance and being a part of a substrate for the inertial sensor processed with MEMS techniques.
Abstract:
In one aspect, a microelectromechanical device and method of producing the device includes an accelerometer (110) with a thinned flexure structure (112). In another embodiment, the device and method of producing the device includes an accelerometer (110) and a pressure sensor (120) integrated on a single chip (100).
Abstract:
Bei der Herstellung eines mikromechanischen Bauelements mit gegeneinander beweglichen Komponenten (7, 8) aus einem Substrat wird eine leitfähige Beschichtung (10) wenigstens auf einander zugewandten Oberflächen (9) der gegeneinander beweglichen Komponenten (7, 8) aufgebracht.
Abstract:
A system for acquiring environnemental information measurements. The 5 system (100) utilizes a sensor, (205) a front-end circuit, (310) a loop filter (315), a switch controller (206), and a recuced-oder loop control circuit to provide reliable data measurements while providing robust system behavior. The system further includes a sensor simulator (330) for simulating the operation of the sensor (205) and testing the operation of the front-end circuit (310) nd the loop filter (315).
Abstract:
An accelerometer is disclosed comprising a measuring mass 1405 for detecting acceleration, including a housing having a cavity, one or more spring mass assemblies 1400 positioned within the cavity, wherein each spring mass assembly 1400 includes a support structure 1410, including one or more resilient folded beams 1415a-1415d coupled to the support structure 1410 and the measuring mass 1405 is coupled to the resilient folded beams 1415a-1415d, wherein one or more electrode patterns are coupled to the spring mass assembly 1400, wherein a top cap wafer, including a top capacitor electrode, is coupled to the measurement mass 1405, and a bottom cap wafer, including a bottom capacitor electrode, is also coupled to the measurement mass 1405.
Abstract:
A plane vibrator (5) of an angular velocity sensor (2) and a movable member (20) of an acceleration sensor (3) are provided in a spaced floating state on the same substrate (4). A lid (30) is formed so as to cover and be spaced from the upper side of the plane vibrator (5) and the movable member (20). A space defined by the substrate (4) and the lid (30) is sectioned into a angular velocity sensor space (33) and an acceleration sensor space (34) by use of a sectioning wall (36). The angular velocity sensor space (33) is hermetically sealed to be in the vacuum state. The acceleration sensor space (34) is hermetically sealed to be under atmospheric pressure. The plane vibrator (5) is vibrated at a high frequency and a large amplitude so that the angular velocity detection sensitivity is enhanced. The movable member (20), even if vibration of the plane vibrator (5) is transmitted thereto, is prevented from vibrating at a high frequency and a large amplitude, due to the damping effect of air. Thus, the acceleration detection sensitivity is enhanced.
Abstract:
The invention relates to a method for manufacturing a silicon sensor structure and a silicon sensor. According to the method, into a single-crystal silicon wafer (10) is formed by etched opening at least one spring element configuration (7) and at least one seismic mass (8) connected to said spring element configuration (7). According to the invention, the openings and trenches (8) extending through the depth of the silicon wafer are fabricated by dry etch methods, and the etch process used for controlling the spring constant of the spring element configuration (7) is based on wet etch methods.