公开(公告)号：EP1416522A4

公开(公告)日：2005-09-21

申请号：EP02745896

申请日：2002-07-10

申请人： ADV LCD TECH DEV CT CO LTD

发明人： MATSUMURA M ,  OANA Y ,  ABE H ,  YAMAMOTO Y ,  KOSEKI H ,  WARABISAKO M

IPC分类号： B65G49/07 ,  H01L21/20 ,  H01L21/336 ,  H01L21/67 ,  H01L21/673 ,  H01L21/677 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786

CPC分类号： H01L29/66757 ,  H01L21/2026 ,  H01L21/67373 ,  H01L21/67379 ,  H01L21/67772 ,  H01L21/67775 ,  H01L27/1218 ,  H01L27/1274 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66772 ,  H01L29/78654 ,  H01L29/78675

摘要： A thin film semiconductor device and a method for producing it are described. In the thin film layer of semiconductor of the device, a plurality of large size single-crystalline grains of semiconductor are formed in a regulated configuration, and each of single crystalline grains is equipped with one unit of electric circuit having a gate electrode, a source electrode and drain electrode. Such regulated arrangement of large size single-crystalline grains in the semiconductor layer is realized by a process including a step of irradiating the layer of amorphous or polycrystalline semiconductor with energy beam such as excimer laser so that maximum irradiation intensity points and minimum irradiation intensity points are arranged regulatedly. The device can have a high mobility such as about 500 cm /V sec.

摘要翻译： 一种薄膜半导体器件包括具有半导体薄膜层的衬底。 半导体薄膜层通过在绝缘基板上形成非单结晶半导体薄膜并通过改变能量强度以能量束的最大和最小强度规则排列的方式用能量束照射来形成 在用能量束照射的各区域的能量强度分布中，由此规则排列具有2μm以上的大粒径的单晶颗粒。 薄膜半导体器件的单元电极与半导体薄膜层的各个单晶对准地制作在衬底上。 结果，具有栅极电极，源极电极和漏极电极的单元电路被有规律地布置成对应于形成在半导体薄膜中的各个半导体单晶颗粒。 因此，薄膜半导体器件以高迁移率工作而不会受到例如在操作期间晶界处的电子散射的不利影响。

公开(公告)号：EP1017100A4

公开(公告)日：2004-12-08

申请号：EP99905304

申请日：1999-02-24

申请人： SEIKO EPSON CORP

发明人： SHIMODA TATSUYA ,  INOUE SATOSHI

IPC分类号： H01L27/00 ,  G11B5/84 ,  G11C11/401 ,  H01L21/336 ,  H01L21/68 ,  H01L21/762 ,  H01L21/77 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8244 ,  H01L21/8246 ,  H01L21/84 ,  H01L21/98 ,  H01L23/48 ,  H01L25/065 ,  H01L27/06 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L27/11 ,  H01L27/12 ,  H01L29/786 ,  H01L31/101 ,  H01L39/02 ,  H01L39/24 ,  H01L43/12

CPC分类号： H01L27/1266 ,  H01L21/6835 ,  H01L21/76251 ,  H01L21/8221 ,  H01L21/84 ,  H01L23/48 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/0694 ,  H01L27/1108 ,  H01L27/12 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78678 ,  H01L31/101 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2225/06513 ,  H01L2225/06565 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/30105 ,  H01L2924/3025 ,  Y10S438/977 ,  H01L2924/00

摘要： A memory IC (10a) comprises a substrate (transfer-side substrate) (21), and memory cell arrays (71, 72, 73) formed in multilayer on the substrate (21) in order of mention from the lower side of the Figure by thin-film structure transfer. In the thin-film structure transfer method, a thin-film device layer (memory cell array) is formed on a substrate through an isolation layer, the isolation layer is irradiated with illumination light, determination in the isolation layer and/or at the interface is caused to occur, and the thin-film device layer is transferred to the substrate (21).

摘要翻译： 存储器IC（10a）包括衬底（传输侧衬底）（21）以及在衬底（21）上以从图的下侧开始依次提到的多层形成的存储器单元阵列（71,72,73） 通过薄膜结构转移。 在薄膜结构转移方法中，通过隔离层在衬底上形成薄膜器件层（存储器单元阵列），用照明光照射隔离层，在隔离层中和/或在界面处确定 被引起发生，并且薄膜器件层被转移到衬底（21）。

公开(公告)号：EP1420437A1

公开(公告)日：2004-05-19

申请号：EP02749337.8

申请日：2002-07-23

申请人： SEIKO EPSON CORPORATION

发明人： HIROSHIMA, Yasushi, c/o SEIKO EPSON CORPORATION

IPC分类号： H01L21/20 ,  H01L29/786

CPC分类号： H01L21/02686 ,  C23C16/4401 ,  C23C16/4411 ,  C30B25/08 ,  C30B25/10 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/67109 ,  H01L21/67126 ,  H01L21/67373 ,  H01L21/67379 ,  H01L21/67772 ,  H01L21/67775 ,  H01L27/1218 ,  H01L27/1274 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/66772 ,  H01L29/78654 ,  H01L29/78675

摘要： According to the semiconductor thin-film and semiconductor device manufacturing method of the present invention, an insulating film having a through-hole between two layers of silicon film is provided, the silicon film is partially melted by irradiating a laser thereon, and a substantially monocrystalline film is continuously formed extending via the through-hole from at least part of the layer of silicon film below the insulating film that continues to the through-hole, to at least part of the layer of silicon film above the insulating film. It is therefore sufficient to form a through-hole with a larger diameter than that of a hole formed by the conventional method, because the diameter of the through-hole in the insulating film may be the same size or slightly smaller than the size of a single crystal grain that comprises the polycrystal formed in the silicon film below the insulating film. Costly precision exposure devices and etching devices are therefore unnecessary. Numerous high-performance semiconductor devices can also be formed easily on a large glass substrate, as in large liquid-crystal displays and the like.

摘要翻译： 。根据本发明的半导体薄膜和半导体器件制造方法，以绝缘膜具有通孔硅的两层-被膜上设置通过在其上照射激光，硅酮电影部分熔化，和一个基本上呈单晶态之间 电影被连续地延伸通过所述通孔形成为从硅的低于薄膜绝缘膜做的层的至少一部分继续通孔，与硅的绝缘膜，电影以上的层的至少一部分。 因此，足以形成通孔具有比由常规方法形成的孔的较大的直径，因为在绝缘通孔的直径的薄膜可以比的大小相同的大小或略小 单个晶粒也包括在硅氧烷膜下方的绝缘膜 - 形成的多晶体。 昂贵的精密曝光装置及蚀刻装置，因此不必要的。 许多高性能的半导体器件，因此可以在一个大的玻璃基板容易地形成，如在大型液晶显示器等。

公开(公告)号：EP0714140B1

公开(公告)日：2003-09-03

申请号：EP95921972.6

申请日：1995-06-15

申请人： SEIKO EPSON CORPORATION

发明人： MIYASAKA, Mitsutoshi

IPC分类号： H01L21/205 ,  G02F1/136 ,  H01L21/336 ,  H01L21/20 ,  C23C16/24

CPC分类号： H01L29/66757 ,  F16C29/00 ,  F16C2360/45 ,  G02F1/13454 ,  G02F2202/104 ,  H01L21/0237 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/28079 ,  H01L21/3105 ,  H01L29/4908 ,  H01L29/78675

公开(公告)号：EP0901169B1

公开(公告)日：2003-04-02

申请号：EP97306916.4

申请日：1997-09-05

申请人： HITACHI EUROPE LIMITED

发明人： Nakazato, Kazuo ,  Mizuta, Hiroshi ,  Shimada, Toshikazu ,  Sunami, Hideo ,  Itoh, Kiyoo ,  Teshima, Tatsuya ,  Mine, Toshiyuki

IPC分类号： H01L29/772 ,  H01L45/00 ,  H01L29/788 ,  H01L29/786

CPC分类号： H01L29/78696 ,  H01L21/28202 ,  H01L27/0688 ,  H01L29/513 ,  H01L29/518 ,  H01L29/772 ,  H01L29/78642 ,  H01L29/78675 ,  H01L29/7883 ,  H01L29/8616 ,  H01L45/00

公开(公告)号：EP0717439B1

公开(公告)日：2003-02-19

申请号：EP95119426.5

申请日：1995-12-09

申请人： EASTMAN KODAK COMPANY

发明人： Tang, Ching Wan, c/o Eastman Kodak Co. ,  Hseih, Biay Cheng, c/o Eastman Kodak Co.

IPC分类号： H01L27/15 ,  H01L21/84 ,  H01L21/98 ,  H01L29/786 ,  H05B33/14 ,  C09K11/06

CPC分类号： H01L27/1255 ,  G09G3/3225 ,  H01L27/1214 ,  H01L27/326 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/78675 ,  Y10S148/15

摘要： A method of making a 4-terminal active matrix electroluminescent device that utilizes an organic material as the electroluminescent medium is described. In this method, thin film transistors are formed from polycrystalline silicon at a temperature sufficiently low such that a low temperature, silica-based glass can be used as the substrate.

公开(公告)号：EP1069465A1

公开(公告)日：2001-01-17

申请号：EP99909351.1

申请日：1999-03-30

申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

发明人： OGAWA, Kazufumi ,  ADACHI, Kazuyasu

IPC分类号： G02F1/136 ,  H01L29/78

CPC分类号： H01L21/02667 ,  G02F1/1368 ,  G02F2202/104 ,  H01L21/02532 ,  H01L21/2026 ,  H01L29/66757 ,  H01L29/78675

摘要： There is suggested a method for forming a good-quality polysilicon layer having a large area through a low temperature process even if laser annealing is not conducted. An object of the present invention is therefore to provide a poly-Si TFT array substrate exhibiting little display unevenness and having a high exactitude even if it has a large screen. This object can be attained by a method for producing a TFT array substrate for a liquid crystal display device, comprising a process of forming, on a substrate, a poly-Si TFT in which a polysilicon semiconductor layer is used in a channel area, comprising a polysilicon layer forming step of depositing silicon particles excited by adding energy beforehand onto the substrate so that the polysilicon layer is formed at the stage when the silicon particles are deposited on the substrate.

摘要翻译： 曾提出一种用于形成具有即使激光退火不进行通过低温工艺大面积的高质量的多晶硅层的方法。 本发明的一个目的是THEREFORE提供显示显示不均少，并且具有即使它具有大的屏幕高精密一个多晶硅型TFT阵列基片。 此目的可通过一种用于制造TFT阵列基板的液晶显示装置，包括形成的过程中，在衬底上实现的，一个多晶硅型TFT，其中，多晶硅半导体层中的沟道区，其包括用于 沉积通过预先添加能量走上太阳基板并在多晶硅层激发硅粒子的多晶硅层形成步骤在所述阶段中形成当硅粒子在基片上沉积。

公开(公告)号：EP1003223A3

公开(公告)日：2001-01-03

申请号：EP99122785.1

申请日：1999-11-16

申请人： SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yamazaki, Shunpei

IPC分类号： H01L21/336 ,  H01L21/84 ,  H01L21/28 ,  H01L29/786 ,  H01L29/423

CPC分类号： H01L27/3262 ,  H01L21/28114 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/3244 ,  H01L27/3248 ,  H01L29/42384 ,  H01L29/66492 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78675 ,  H01L29/78696 ,  H01L51/5256 ,  H01L2029/7863 ,  H01L2227/32

摘要： There is provided a thin film transistor having improved reliability. A gate electrode includes a first gate electrode having a taper portion and a second gate electrode with a width narrower than the first gate electrode. A semiconductor layer is doped with phosphorus of a low concentration through the first gate electrode. In the semiconductor layer, two kinds of n - -type impurity regions are formed between a channel formation region and n + -type impurity regions. Some of the n - -type impurity regions overlap with a gate electrode, and the other n - -type impurity regions do not overlap with the gate electrode. Since the two kinds of n - -type impurity regions are formed, an off current can be reduced, and deterioration of characteristics can be suppressed.

摘要翻译： 一种具有显示装置的电子设备，包括：像素部分，其在基板上包括像素TFT，并且被配置为显示图像; 衬底上的驱动电路; 层间绝缘膜; 以及像素电极，其中所述驱动电路位于所述像素部分的外部，其特征在于，所述像素TFT包括：第一半导体岛，至少包括第一沟道形成区，第二沟道形成区，轻掺杂区和源极和漏极 区域; 形成在所述第一半导体岛上的第一栅极绝缘膜; 形成在所述第一沟道形成区域上的第一栅极电极，所述第一栅极绝缘膜插入其间; 以及形成在所述第二沟道形成区域上的第二栅电极，其中所述第一栅极绝缘膜介于其间，其中所述驱动电路包括薄膜晶体管，所述薄膜晶体管包括：至少第三沟道形成区域的第二半导体岛; 以及在所述第三沟道形成区域上形成有第二栅极绝缘膜的第三栅电极，其中所述层间绝缘膜覆盖所述第一栅电极，所述第二栅电极，所述第三栅电极，所述第一半导体岛和所述第二栅极电极 半导体岛，其中所述像素电极形成在所述层间绝缘膜上并电连接到所述第一半导体岛的源极和漏极区之一，并且其中所述第一栅电极，所述第二栅电极和所述第三栅电极中的至少一个 栅电极具有锥形边缘，其锥角在3°至60°的范围内。

公开(公告)号：EP1058310A2

公开(公告)日：2000-12-06

申请号：EP00111706.8

申请日：2000-05-31

申请人： SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yamazaki, Shunpei ,  Suzawa, Hideomi ,  Yamagata, Hirokazu

IPC分类号： H01L27/12 ,  H01L21/84

CPC分类号： H01L29/78621 ,  G02F1/13454 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3244 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78645 ,  H01L29/78675 ,  H01L29/78678 ,  H01L2924/0002 ,  H01L2924/00

摘要： In order to increase an aperture ratio, a part of or all of a gate electrode that overlaps with channel formation regions (213, 214) of a pixel TFT is caused to overlap with second wirings (source line or drain line) (154, 157). Additionally, a first interlayer insulating film (149) and a second interlayer insulating film (150c) are disposed between the gate electrode and the second wirings (154, 157) so as to decrease a parasitic capacitance.

摘要翻译： 为了增加孔径比，使与像素TFT的沟道形成区域（213,214）重叠的栅电极的一部分或全部与第二布线（源极线或漏极线）（154,157）重叠 ）。 此外，第一层间绝缘膜（149）和第二层间绝缘膜（150c）设置在栅电极和第二布线（154,157）之间，以便降低寄生电容。

公开(公告)号：EP1049144A1

公开(公告)日：2000-11-02

申请号：EP98961378.1

申请日：1998-12-17

申请人： Matsushita Electronics Corporation

发明人： TAKETOMI, Yoshinao ,  KURAMASU, Keizaburo ,  IZUCHI, Masumi ,  SATANI, Hiroshi ,  TSUTSU, Hiroshi ,  NISHITANI, Hikaru ,  NISHITANI, Mikihiko ,  GOTO, Masashi ,  MINO, Yoshiko

IPC分类号： H01L21/20 ,  H01L29/786

CPC分类号： H01L21/02532 ,  H01L21/02609 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02689 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/316 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： In a polycrystalline silicon thin film transistor, a semiconductor device having a high field effect mobility is achieved by increasing a grain size of a silicon thin film. First, an insulation layer having a two-layer structure is formed on a transparent insulated substrate 201. In the insulation layer, a lower insulation layer 202, which is in contact with the transparent insulating substrate 201, is made to have a higher thermal conductivity than an upper insulation layer 203. Thereafter, the upper insulation layer 203 is patterned so that a plurality of stripes are formed thereon. Subsequently, an amorphous silicon thin film 204 is formed on the patterned insulation layer, and the insulation layer is irradiated with a laser light scanning in a direction parallel to the stripe pattern on the upper insulation layer 203. Thus, the amorphous silicon thin film 203 is formed into a polycrystalline silicon thin film 210.