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    SUSCEPTOR
    83.
    发明公开
    SUSCEPTOR 审中-公开
    SUSZEPTOR

    公开(公告)号：EP2963676A1

    公开(公告)日：2016-01-06

    申请号：EP14757509.6

    申请日：2014-02-25

    申请人： Toyo Tanso Co., Ltd.

    发明人： NAKAYA, Satoshi

    IPC分类号： H01L21/205 ,  C23C16/458 ,  H01L21/683

    CPC分类号： C23C16/4581 ,  C23C16/4404 ,  C23C16/45521 ,  C23C16/4584 ,  H01L21/68764 ,  H01L21/68771

    摘要： A susceptor is provided that can prevent adverse effects on the product quality of a semiconductor material by inhibiting the reaction of an auxiliary gas resulting from contact between the auxiliary gas and carbon.
    The susceptor includes: a first auxiliary gas passage (10) having an inner wall made of carbon and provided between an auxiliary gas inlet port (12) for introducing an auxiliary gas to the inside; curved grooves (15) provided in a surface facing a wafer so as to extend in a curved shape and having the auxiliary gas outlet port (16); and a protection member (11), provided on at least a portion of the first auxiliary gas passage (10) so as to cover an inner wall of the auxiliary gas passage (10), and having a surface that is to be in contact with the auxiliary gas and is made of a resistant material having low reactivity with the caustic gas.

    摘要翻译： 提供了一种感受器，其可以通过抑制由辅助气体和碳之间的接触引起的辅助气体的反应来防止对半导体材料的产品质量的不利影响。 基座包括：第一辅助气体通道（10），其具有由碳制成的内壁，并设置在用于将辅助气体引入内部的辅助气体入口（12）之间; 设置在面向晶片的表面中的弯曲凹槽（15），以弯曲形状延伸并具有辅助气体出口（16）; 以及保护构件（11），其设置在所述第一辅助气体通道（10）的至少一部分上以覆盖所述辅助气体通道（10）的内壁，并且具有将与 辅助气体由与苛性气体的反应性低的电阻材料制成。

    SILICON CARBIDE-TANTALUM CARBIDE COMPOSITE AND SUSCEPTOR
    84.
    发明公开
    SILICON CARBIDE-TANTALUM CARBIDE COMPOSITE AND SUSCEPTOR 有权
    无锡证券监督管理委员会

    公开(公告)号：EP2955167A1

    公开(公告)日：2015-12-16

    申请号：EP14748688.0

    申请日：2014-01-28

    申请人： Toyo Tanso Co., Ltd.

    发明人： SHINOHARA, Masato

    IPC分类号： C04B41/89 ,  C04B41/87 ,  C23C16/458 ,  C30B25/12 ,  C30B29/36 ,  H01L21/683

    CPC分类号： C04B41/89 ,  C04B35/522 ,  C04B41/00 ,  C04B41/009 ,  C04B41/4529 ,  C04B41/5059 ,  C04B41/5061 ,  C04B41/52 ,  C04B41/53 ,  C23C16/4581 ,  C30B29/36 ,  C30B35/00 ,  H01L21/683 ,  H01L21/68757 ,  Y10T428/24612 ,  Y10T428/265 ,  Y10T428/30 ,  C04B41/4531 ,  C04B41/4519 ,  C04B41/5001 ,  C04B41/5346 ,  C04B41/455 ,  C04B41/5057

    摘要： Provided is a silicon carbide-tantalum carbide composite having excellent durability. A silicon carbide-tantalum carbide composite (1) includes: a body (10) whose surface layer is at least partly formed of a first silicon carbide layer (12); a tantalum carbide layer (20) ; and a second silicon carbide layer (13). The tantalum carbide layer (20) is disposed over the first silicon carbide layer (12). The second silicon carbide layer (13) is interposed between the tantalum carbide layer (20) and the first silicon carbide layer (12). The second silicon carbide layer (13) has a C/Si composition ratio of not less than 1.2 as measured by X-ray photoelectron spectroscopy. The second silicon carbide layer (13) has a peak intensity ratio G/D of not less than 1.0 between the G-band and D-band of carbon as measured by Raman spectroscopy.

    摘要翻译： 提供了具有优异耐久性的碳化硅 - 碳化钽复合材料。 碳化硅 - 碳化钽复合材料（1）包括：其表面层至少部分地由第一碳化硅层（12）形成的主体（10）; 碳化钽层（20）; 和第二碳化硅层（13）。 碳化钽层（20）设置在第一碳化硅层（12）的上方。 第二碳化硅层（13）插入在碳化钽层（20）和第一碳化硅层（12）之间。 通过X射线光电子能谱测定，第二碳化硅层（13）的C / Si组成比不小于1.2。 通过拉曼光谱测定，第二碳化硅层（13）的G带和D带之间的峰值强度比G / D不小于1.0。

    SURFACE TREATMENT METHOD FOR SINGLE CRYSTAL SiC SUBSTRATE, AND SINGLE CRYSTAL SiC SUBSTRATE
    87.
    发明公开
    SURFACE TREATMENT METHOD FOR SINGLE CRYSTAL SiC SUBSTRATE, AND SINGLE CRYSTAL SiC SUBSTRATE 审中-公开
    AT AT AT AT EN EN AT AT AT AT AT AT AT AT AT AT AT AT AT AT AT AT AT AT AT

    公开(公告)号：EP2921574A1

    公开(公告)日：2015-09-23

    申请号：EP13854743.5

    申请日：2013-11-15

    申请人： Toyo Tanso Co., Ltd.

    发明人： TORIMI, Satoshi ,  YABUKI, Norihito ,  NOGAMI, Satoru

    IPC分类号： C30B29/36 ,  C30B33/12

    CPC分类号： H01L21/0445 ,  C30B29/36 ,  C30B31/22 ,  C30B33/02 ,  C30B33/08 ,  C30B33/12 ,  H01L21/3065 ,  H01L29/1608

    摘要： The present application aims to provide a surface treatment method that is able to accurately control the rate of etching a single crystal SiC substrate and thereby enables correct understanding of the amount of etching. In the surface treatment method, the single crystal SiC substrate is etched by a heat treatment performed under Si vapor pressure. At a time of the etching, inert gas pressure in an atmosphere around the single crystal SiC substrate is adjusted to control the rate of etching. Accordingly, correct understanding of the amount of etching is obtained.

    摘要翻译： 本申请旨在提供一种表面处理方法，其能够精确地控制蚀刻单晶SiC衬底的速率，从而能够正确地理解蚀刻量。 在表面处理方法中，通过在Si蒸气压下进行的热处理蚀刻单晶SiC衬底。 在蚀刻时，调整单晶SiC衬底周围的气氛中的惰性气体压力，以控制蚀刻速率。 因此，获得对蚀刻量的正确理解。

    CAPACITOR
    88.
    发明公开
    CAPACITOR 审中-公开
    电容器

    公开(公告)号：EP2884512A1

    公开(公告)日：2015-06-17

    申请号：EP13827796.7

    申请日：2013-08-07

    申请人： Toyo Tanso Co., Ltd.

    发明人： SHODAI, Yoshio

    IPC分类号： H01G11/22 ,  H01G11/54

    CPC分类号： H01G9/145 ,  H01G9/035 ,  H01G11/24 ,  H01G11/34 ,  H01G11/38 ,  H01G11/58 ,  Y02E60/13

    摘要： A capacitor that has a high frequency response rate and is capable of being charged and discharged at high speed is provided.
    The capacitor includes a polarized electrode containing a carbon material and an electrolyte solution, and is characterized in that the frequency response rate is 0.7 Hz or higher when the electrolyte solution is 40 mass % of sulfuric acid. The carbon material includes porous carbon having pores and a carbonaceous wall that constitutes an outer wall of the pores, the porous carbon being configured so that the pores are open pores and hollow portions thereof are connected to each other.

    摘要翻译： 提供具有高频响应率并且能够高速充电和放电的电容器。 电容器包括含有碳材料和电解质溶液的极化电极，并且当电解质溶液为40质量％硫酸时，其特征在于频率响应率为0.7Hz或更高。 碳材料包括具有孔隙的多孔碳和构成孔隙外壁的碳质壁，多孔碳被配置为使得孔隙为开孔并且其中空部分彼此连接。