摘要:
A method of manufacturing a spark plug 1 in which at least one of a center electrode 2 and a ground electrode 3 includes a discharge chip 5. In a chip making step, the discharge chip 5 is made by joining a discharge part 51 arranged on a spark discharge gap 11 side and a base member-joining part 52 that is made of a material having a lower melting point than the discharge part 51 and to be joined to an electrode base member 30. In a temporary joining step, the discharge chip 5 is temporarily joined, at the base member-joining part 52, to the electrode base member 30 by resistance welding. In a main joining step, the discharge chip 5 is joined, by laser welding, to the electrode base member 30 so that a side surface 511 of the discharge part 51 and a surface 31 of the electrode base member 30 are smoothly connected by a connecting surface 523 that has no sharp edge.
摘要:
An object of the present invention is to provide a winding spool for bonding wires, a winding structure for the winding spool, and a spool case for storing the spool, wherein a bonding wire wound on the spool has excellent unwinding properties against vibration and impacts occurring during long-distance transportation or attachment to a bonding device. The winding spool of the present invention is a winding spool for a bonding wire, the winding spool being made of a synthetic resin and comprising a perforated guide portion, a drum portion, and flange portions, wherein an inner surface of each flange portion has an inclined portion having an elevation angle of 76 degrees or more and 86 degrees or less, and the inclined portion has a vertical height (h) that is 50% or more of a vertical height (H) of the entire inner surface of the flange portion, whereby the problems can be solved. Moreover, a larger impact can be solved by the winding structure of a bonding wire of the present invention; that is, the height of an edge of the drum portion on which the bonding wire is wound is higher than the height of the center of the drum portion. In addition, a further larger impact can be solved by using the spool case for winding spools of the present invention. That is, in the spool case for winding spools comprising a cover portion and a body made of a synthetic resin, the body has an approximately square pyramid trapezoidal shape with an opening on a side of the cover portion, and side facing surfaces of the body each have one or more expanded portions.
摘要:
[Issues to be solved] Second bonding failures caused attached oxide of additive elements on high purity Au bonding wire are to be dissolved. [Solution means] Au alloy bonding wires comprising: 5 - 100 wt ppm Mg, 5 - 20 wt ppm In, 5 - 20 wt ppm Al, 5 - 20 wt ppm Yb, and Au residual is more than 99.995 wt % purity, and adding 5 - 20 wt ppm Ca, and for these alloys adding at least more than one element among 5 - 20 wt ppm La, 5 - 20 wt ppm Lu, 5 - 100 wt ppm Sn, 5 - 100 wt ppm Sr to the alloy, and/or, more over, adding 0.01 - 1.2 wt % Pd to these alloys. Bonding wire, which contains these trace additive elements .do not cause of disturbance by accumulated contamination, because of contamination, which formed at ball formation by micro discharge and at the first bonding to attached on tip of capillary, transferring to the wire at second bonding.
摘要:
[Issues to be solved] Second bonding failures caused attached oxide of additive elements on high purity Au bonding wire are to be dissolved. [Solution means] Au alloy bonding wires comprising: 5 - 100 wt ppm Mg, 5 - 20 wt ppm In, 5 - 20 wt ppm Al, 5 - 20 wt ppm Yb, and Au residual is more than 99.995 wt % purity, and adding 5 - 20 wt ppm Ca, and for these alloys adding at least more than one element among 5 - 20 wt ppm La, 5 - 20 wt ppm Lu, 5 - 100 wt ppm Sn, 5 - 100 wt ppm Sr to the alloy, and/or, more over, adding 0.01 - 1.2 wt % Pd to these alloys. Bonding wire, which contains these trace additive elements .do not cause of disturbance by accumulated contamination, because of contamination, which formed at ball formation by micro discharge and at the first bonding to attached on tip of capillary, transferring to the wire at second bonding.
摘要:
To provide a covered Cu wire for ball bonding which can be avoid inconvenience oxidation of core material of Cu and/or Cu alloy on ball forming after pulling and cutting away. A covered Cu wire comprising: core material of Cu-P alloy, and intermediate layer of Pd or Pt on the core material and surface layer of Au on the intermediate layer.
摘要:
[Issues to be solved] Second bonding failures caused attached oxide of additive elements on high purity Au bonding wire are to be dissolved. [Solution means] Au alloy bonding wires comprising: 0.01 - 1.2 wt % Pd, 5 - 100 wt ppm Mg, 5 - 20 wt ppm In, 5 - 20 wt ppm Al, 5 - 20 wt ppm Yb, optionally 5 - 20 wt ppm Ca and/or at least more than one element among 5 - 20 wt ppm La, 5 - 20 wt ppm Lu, 5 - 100 wt ppm Sn, 5 - 100 wt ppm Sr,
the rest being Au having a purity greater than 99.99 wt %. Bonding wire, which contains these trace additive elements do not cause of disturbance by accumulated contamination, because of contamination, which formed at ball formation by micro discharge and at the first bonding to attached on tip of capillary, transferring to the wire at second bonding.
摘要:
[PROBLEMS] To provide a gold alloy wire which is excellent in the property of forming a melt ball, suitability for stitch bonding, and wire strength and, despite this, gives a press-bonded ball having excellent circularity, and which is usable in high-density wiring for a semiconductor device. [MEANS FOR SOLVING PROBLEMS] The gold alloy wire for use in ball bonding is made of a gold alloy comprising 10-50 mass ppm magnesium (Mg), 5-20 mass ppm europium (Eu), 2-9 mass ppm calcium (Ca), and gold (Au) having a purity of 99.995 mass% or higher as the remainder, wherein the calcium (Ca) content is up to half the europium (Eu) content by mass.
摘要:
[Issues to be solved] Providing enhanced bonding reliability of Au alloy bonding wire with low electrical resistivity to Al electrode of semiconductor device, and its application of semiconductor device is bonded with Al electrode pad by the same wire. [Solution means] Au alloy bonding wire comprising: 0.02 - 0.3 mass % Ag, total amount of 10 - 200 mass ppm at least one element of Ge and/or Si, and/or total amount of 10 - 200 mass ppm at least one element of Al and/or Cu, with residual of Au. Moreover, Al and/or Al alloy pad bonded with the above Au alloy bonding wire.
摘要:
To provide a bonding ribbon which can be realized the stable bonding strength, which has a homogeneous whole bonded surface every time for several ten thousands bonding cycles. An aluminum ribbon for ultrasonic bonding comprising: an aluminum alloy is more than 99 wt % of Al, it contains additive elements and residual aluminum, wherein it has ultra thin tape structure roll rolled after multi stages drawing, wherein the average crystal grain size at a cross section of the ribbon is 5 - 200 µm, wherein it is featured the ratio of the thickness to the width is 1/2 - 1/20. It is preferable that the aspect ratio of crystal grain (width direction/thickness direction) is 0.5 - 10 and the surface of the tape is mirror-finished wherein the surface roughness R z is less than 2 µm and/or equals to 2 µm.
摘要:
[Issues to be solved] To provide Au alloy wire for ball bonding, which is superior wire strength, and also is superior at formability of molten ball and roundness of compressed ball, moreover is superior at stitch bondability; is available for high density wiring of semiconductor divices. [Solution means] Au alloy wire for ball bonding comprising: 15 - 50 wt ppm Mg, 10 - 30 wt ppm Ca, 5 - 20 wt ppm Eu, 5 - 20 wt ppm Y, 5 - 20 wt ppm La and residual Au is more than 99.998 wt % purity, moreover, purity of more than 99.98 wt % Au, mass of additive Ca is less than the value of total amount of additive Eu and additive La, and mass of additive Y is less than the value of total amount of additive Ca and additive Eu, and mass of 20 - 40 wt ppm Mg.