公开(公告)号：EP1471570A1

公开(公告)日：2004-10-27

申请号：EP04009746.1

申请日：2004-04-23

申请人： Suga, Tadatomo ,  Shinko Electric Industries Co., Ltd. ,  Oki Electric Industry Co., Ltd. ,  Sharp Kabushiki Kaisha ,  Sony Corporation ,  Kabushiki Kaisha Toshiba ,  NEC CORPORATION ,  Hitachi, Ltd. ,  FUJITSU LIMITED ,  MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. ,  MITSUBISHI DENKI KABUSHIKI KAISHA ,  Rohm Co., Ltd.

发明人： Suga, Tadatomo ,  Itoh, Toshihiro ,  Nakazawa, Hideto ,  Akagawa, Masatoshi

IPC分类号： H01L21/60 ,  H01L21/603 ,  H01L23/485 ,  H01L21/56 ,  H01L21/48 ,  H01L23/538 ,  H01L21/00

CPC分类号： H01L24/81 ,  H01L23/49816 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/16 ,  H01L2224/81054 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2224/81894 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H05K3/3436 ,  H05K2203/085 ,  H05K2203/086 ,  Y02P70/613 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/49149 ,  Y10T29/49197 ,  H01L2224/05624 ,  H01L2924/00014

摘要： A method of mounting an electronic part on a board, in which an electronic part and a mounting board on which the electronic part is to be mounted are placed in a vacuum or inert atmosphere, and the electronic part is mounted on the board by bringing the bonding members of the electronic part and the board into contact with each other at normal temperature to thereby mount the electronic part on the board, the method comprising forming the bonding members of at least one of the electronic part and the board out of a solder material, and bringing the bonding members of the electronic part and the board into contact with each other without preprocessing the bonding surfaces of the bonding members.

摘要翻译： 具有焊锡凸块（13）的封装（11）和具有由焊料材料制成的焊盘（17）的布线板（15）放置在真空或惰性气氛中，使凸块与相应的焊盘接触，而无需预处理 在正常温度下接合凸块和接合焊盘的表面以进行接合。

公开(公告)号：EP1291906A1

公开(公告)日：2003-03-12

申请号：EP01915802.1

申请日：2001-03-27

申请人： Toyo Kohan Co., Ltd. ,  Suga, Tadatomo

发明人： SUGA, Tadatomo ,  SAIJO, K., TOYO KOHAN CO., LTD ,  OHSAWA, S., TOYO KOHAN CO., LTD ,  OKAMOTO, H., TOYO KOHAN CO., LTD. ,  YOSHIDA, K, TOYO KOHAN CO., LTD.

IPC分类号： H01L21/3205 ,  H01L21/3213 ,  H01L21/768

CPC分类号： H01L24/12 ,  H01L23/3114 ,  H01L24/11 ,  H01L24/94 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/00014

摘要： A method of efficiently and inexpensively fabricating a chip-size package having an electrode pitch expanded by forming a conductor wiring on the electrode forming surface side of a semiconductor chip, especially, a method for facilitating wiring and bump forming. A semiconductor device comprising a semi-conductor elements and conductor wirings formed on the semiconductor elements by etching wiring-forming metal foil; and a fabrication method for a semiconductor device comprising the steps of laminating wiring forming metal foil on the electrode forming surface side on the semiconductor, forming a resist wiring pattern on the metal foil, etching the metal foil, and slicing the device into individual elements.

摘要翻译： 一种通过在半导体芯片的电极形成表面侧上形成导体布线来高效且廉价地制造具有扩大的电极间距的芯片尺寸封装的方法，特别是用于促进布线和凸块形成的方法。 一种半导体器件，包括通过腐蚀布线形成金属箔而在半导体元件上形成的半导体元件和导体布线; 以及一种用于半导体器件的制造方法，该方法包括以下步骤：在半导体上的电极形成表面侧上层压布线形成金属箔，在金属箔上形成抗蚀剂布线图案，蚀刻金属箔，以及将器件切成单个元件。

公开(公告)号：EP4358120A1

公开(公告)日：2024-04-24

申请号：EP22816034.7

申请日：2022-05-30

申请人： Bondtech Co., Ltd. ,  Suga, Tadatomo ,  Otsuka, Kanji

发明人： SUGA, Tadatomo ,  OTSUKA, Kanji

IPC分类号： H01L21/60

CPC分类号： H01L21/60

摘要： One embodiment of the present disclosure is a joined structure that comprises: a first substrate that has a first joined surface that has a first signal transmission metal region and a first ground metal region insulated from the first signal transmission metal region; and a second substrate that is joined to the first substrate and has a second joined surface that has a second signal transmission metal region and a second ground metal region that is insulated from the second signal transmission metal region. In the joined structure, the first signal transmission metal region and the second signal transmission metal region are joined and the first ground metal region and the second ground metal region are joined.

公开(公告)号：EP2837490B8

公开(公告)日：2018-11-21

申请号：EP13776372.8

申请日：2013-04-09

申请人： Suga, Tadatomo ,  Lan Technical Service Co., Ltd.

发明人： SUGA, Tadatomo ,  MATSUMOTO, Yoshiie

IPC分类号： B29C65/14 ,  B32B27/28 ,  B32B27/36 ,  B32B37/00 ,  B32B37/02 ,  B32B37/18 ,  B32B37/20 ,  B32B37/24 ,  B29C59/14 ,  C08J5/12 ,  B32B27/08 ,  B32B17/06 ,  B29C65/00

CPC分类号： B32B15/08 ,  B29C59/14 ,  B29C65/1432 ,  B29C65/1454 ,  B29C65/1467 ,  B29C66/028 ,  B29C66/1122 ,  B29C66/45 ,  B29C66/71 ,  B29C66/712 ,  B29C66/72321 ,  B29C66/72325 ,  B29C66/72326 ,  B29C66/73161 ,  B29C66/7373 ,  B29C66/7392 ,  B29C66/73921 ,  B29C66/7394 ,  B29C66/73941 ,  B29C66/74 ,  B29C66/7461 ,  B29C66/74611 ,  B29C66/7465 ,  B29C66/8221 ,  B29C66/83241 ,  B29C66/83413 ,  B32B15/09 ,  B32B17/064 ,  B32B27/08 ,  B32B27/281 ,  B32B27/36 ,  B32B37/0076 ,  B32B37/02 ,  B32B37/182 ,  B32B37/203 ,  B32B37/24 ,  B32B38/00 ,  B32B2037/0092 ,  B32B2037/243 ,  B32B2250/03 ,  B32B2255/10 ,  B32B2255/20 ,  B32B2255/205 ,  B32B2307/546 ,  B32B2309/68 ,  B32B2310/0881 ,  B32B2457/20 ,  B32B2457/206 ,  C08J5/12 ,  Y10T156/10 ,  Y10T428/31681 ,  B29K2067/003 ,  B29K2079/08 ,  B29K2067/00 ,  B29K2067/006

摘要： The present invention provides a method for firmly and inexpensively bonding at low temperature a polymer film to another polymer film or to a glass substrate without the use of an organic adhesive. A method for bonding a polymer film includes a step (S1) for forming a first inorganic material layer on part or all of a first polymer film; a step (S3) for forming a second inorganic material layer on part or all of a second polymer film; a step (S2) for surface-activating the surface of the first inorganic material layer by bombarding with particles having a predetermined kinetic energy; a step (S4) for surface-activating the surface of the second inorganic material layer by bombarding with particles having a predetermined kinetic energy; and a step (S5) for abutting the surface-activated surface of the first inorganic material layer against the surface-activated surface of the second inorganic material layer and bonding the first polymer film and second polymer film together.

公开(公告)号：EP2837490B1

公开(公告)日：2018-09-26

申请号：EP13776372.8

申请日：2013-04-09

申请人： Suga, Tadatomo ,  Lan Technical Service Co., Ltd.

发明人： SUGA, Tadatomo ,  MATSUMOTO, Yoshiie

IPC分类号： B29C65/14 ,  B32B27/28 ,  B32B27/36 ,  B32B37/00 ,  B32B37/02 ,  B32B37/18 ,  B32B37/20 ,  B32B37/24 ,  B29C59/14 ,  C08J5/12 ,  B32B27/08 ,  B32B17/06 ,  B29C65/00

CPC分类号： B32B15/08 ,  B29C59/14 ,  B29C65/1432 ,  B29C65/1454 ,  B29C65/1467 ,  B29C66/028 ,  B29C66/1122 ,  B29C66/45 ,  B29C66/71 ,  B29C66/712 ,  B29C66/72321 ,  B29C66/72325 ,  B29C66/72326 ,  B29C66/73161 ,  B29C66/7373 ,  B29C66/7392 ,  B29C66/73921 ,  B29C66/7394 ,  B29C66/73941 ,  B29C66/74 ,  B29C66/7461 ,  B29C66/74611 ,  B29C66/7465 ,  B29C66/8221 ,  B29C66/83241 ,  B29C66/83413 ,  B32B15/09 ,  B32B17/064 ,  B32B27/08 ,  B32B27/281 ,  B32B27/36 ,  B32B37/0076 ,  B32B37/02 ,  B32B37/182 ,  B32B37/203 ,  B32B37/24 ,  B32B38/00 ,  B32B2037/0092 ,  B32B2037/243 ,  B32B2250/03 ,  B32B2255/10 ,  B32B2255/20 ,  B32B2255/205 ,  B32B2307/546 ,  B32B2309/68 ,  B32B2310/0881 ,  B32B2457/20 ,  B32B2457/206 ,  C08J5/12 ,  Y10T156/10 ,  Y10T428/31681 ,  B29K2067/003 ,  B29K2079/08 ,  B29K2067/00 ,  B29K2067/006

摘要： The present invention provides a method for firmly and inexpensively bonding at low temperature a polymer film to another polymer film or to a glass substrate without the use of an organic adhesive. A method for bonding a polymer film includes a step (S1) for forming a first inorganic material layer on part or all of a first polymer film; a step (S3) for forming a second inorganic material layer on part or all of a second polymer film; a step (S2) for surface-activating the surface of the first inorganic material layer by bombarding with particles having a predetermined kinetic energy; a step (S4) for surface-activating the surface of the second inorganic material layer by bombarding with particles having a predetermined kinetic energy; and a step (S5) for abutting the surface-activated surface of the first inorganic material layer against the surface-activated surface of the second inorganic material layer and bonding the first polymer film and second polymer film together.

公开(公告)号：EP3136422A1

公开(公告)日：2017-03-01

申请号：EP15783636.2

申请日：2015-04-24

申请人： Suga, Tadatomo ,  Bondtech Co., Ltd.

发明人： YAMAUCHI, Akira ,  SUGA, Tadatomo

IPC分类号： H01L21/02 ,  B23K20/00 ,  H05H1/46 ,  H05H3/02

CPC分类号： H01L21/187 ,  B23K20/00 ,  H01J37/3233 ,  H01L21/02 ,  H01L21/67092 ,  H01L21/67115 ,  H01L21/76251 ,  H01L25/0657 ,  H05H1/46 ,  H05H3/02

摘要： A substrate bonding apparatus (100) includes a vacuum chamber (200), a surface activation part (610) for activating respective bonding surfaces of a first substrate (301) and a second substrate (302), and stage moving mechanisms (403, 404) for bringing the two bonding surfaces into contact with each other, to thereby bond the substrates (301, 302). In order to activate the bonding surfaces in the vacuum chamber (200), the bonding surfaces are irradiated with a particle beam for activating the bonding surfaces, and concurrently the bonding surfaces are also irradiated with silicon particles. It is thereby possible to increase the bonding strength of the substrates (301, 302).

摘要翻译： 基板接合装置（100）包括真空室（200），用于激活第一基板（301）和第二基板（302）的各个接合面的表面活化部（610），以及台移动机构 ），用于使两个接合表面彼此接触，从而结合基板（301,302）。 为了激活真空室（200）中的接合表面，用用于激活接合表面的粒子束照射接合表面，同时接合表面也被硅颗粒照射。 由此，可以提高基板（301,302）的接合强度。

公开(公告)号：EP1637893A1

公开(公告)日：2006-03-22

申请号：EP04745857.5

申请日：2004-06-08

申请人： TOKYO ELECTRON LIMITED ,  Suga, Tadatomo ,  Itoh, Toshihiro

发明人： SUGA, Tadatomo ,  ITOH, Toshihiro ,  KOMATSU, Shigekazu c/o Tokyo Electron Limited IPD ,  KATAOKA, Kenichi

IPC分类号： G01R31/26

CPC分类号： G01R1/07357 ,  G01R31/2887

摘要： At least one third pair of electrode 17 formed on a mounting surface 11C of a stage 11 is in contact with a conductive layer Q formed on a first surface 31 of an inspection object, and an electrical path is formed between the both by using a fritting phenomenon.

摘要翻译： 在载物台11的载置面11C上形成的至少三分之一的电极17与形成在检查对象物的第一面31上的导电层Q接触，通过烧结而在两者之间形成电路 现象。

公开(公告)号：EP1182460A2

公开(公告)日：2002-02-27

申请号：EP01119644.1

申请日：2001-08-21

申请人： TOKYO ELECTRON LIMITED ,  Suga, Tadatomo ,  Itoh, Toshihiro

发明人： Iino, Shinji ,  Takekoshi, Kiyoshi ,  Suga, Tadatomo ,  Itoh, Toshihiro ,  Kataoka, Kenichi

IPC分类号： G01R1/067

CPC分类号： G01R31/2891 ,  G01R1/067 ,  G01R1/06794 ,  G01R3/00 ,  G01R31/2886

摘要： Disclosed is an inspection method for inspecting the electrical characteristics of a device by bringing an inspecting probe (12A) into electrical contact with an inspection electrode (P). An insulating film (O) formed on the surface of the inspection electrode (P) is broken by utilizing a fritting phenomenon so as to bring the inspection electrode (12A) into electrical contact with the inspection electrode (P).

公开(公告)号：EP4224512A1

公开(公告)日：2023-08-09

申请号：EP21875137.8

申请日：2021-09-10

申请人： Bondtech Co., Ltd. ,  Suga, Tadatomo

发明人： YAMAUCHI, Akira ,  SUGA, Tadatomo

IPC分类号： H01L21/02

摘要： A substrate bonding method for bonding two substrates includes an activation treatment step of, by subjecting at least one of bonding surfaces to be bonded to each other of respective ones of the two substrates to at least one of reactive ion etching using nitrogen gas and irradiation of nitrogen radicals, activating the bonding surface, a gas exposure step of, after the activation treatment step, exposing the bonding surfaces of the two substrates to gas containing water within a preset standard time, and a bonding step of bonding the two substrates that have the bonding surfaces activated in the activation treatment step.

公开(公告)号：EP3736134A1

公开(公告)日：2020-11-11

申请号：EP18897427.3

申请日：2018-12-21

申请人： Lan Technical Service Co., Ltd. ,  Suga, Tadatomo

发明人： MATSUMOTO,Yoshiie ,  SUGA, Tadatomo

IPC分类号： B32B37/26 ,  B29C65/02 ,  B32B9/00 ,  C03C27/10 ,  C23C14/08 ,  C23C14/46 ,  C23C16/455 ,  H01L51/50 ,  H05B33/04 ,  H05B33/10

摘要： [Summary]
Methods of bonding substrates are provided, including forming a thin film of a metal oxide on a bonding surface of both or either of a pair of substrates, at least one of which is a transparent substrate, and contacting the bonding surfaces of the pair of substrates with each other via the thin film of the metal oxide.