公开(公告)号：EP2731133A3

公开(公告)日：2017-11-01

申请号：EP13191022.6

申请日：2013-10-31

申请人： Delta Electronics, Inc.

发明人： Tsai, Hsin-Chang ,  Lee, Chia-Yen ,  Lee, Peng-Hsin

IPC分类号： H01L23/48 ,  H01L21/768 ,  H01L21/60 ,  H01L23/485

CPC分类号： H01L21/76898 ,  H01L21/268 ,  H01L21/2885 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76895 ,  H01L23/481 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/91 ,  H01L25/074 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/02372 ,  H01L2224/0332 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/05557 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16146 ,  H01L2224/16147 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/17181 ,  H01L2224/73221 ,  H01L2224/73255 ,  H01L2224/73257 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/13064 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/05552

摘要： A method of forming an interconnection structure is disclosed, including providing a substrate having a first side and a second side opposite to the first side, forming a via hole through the substrate, wherein the via hole has a first opening in the first side and a second opening in the second side, forming a first pad covering the first opening, and forming a via structure in the via hole subsequent to forming the first pad, wherein the via structure includes a conductive material and is adjoined to the first pad.

摘要翻译： 公开了一种形成互连结构的方法，包括：提供具有第一侧和与第一侧相对的第二侧的衬底;形成穿过衬底的过孔;其中过孔在第一侧中具有第一开口; 形成覆盖所述第一开口的第一焊盘;以及在形成所述第一焊盘之后，在所述通孔中形成通孔结构，其中，所述通孔结构包括导电材料并且与所述第一焊盘相邻接。

公开(公告)号：EP2840605B1

公开(公告)日：2017-08-09

申请号：EP13183554.8

申请日：2013-09-09

申请人： Delta Electronics, Inc.

发明人： Tsai, Hsin-Chang ,  Lee, Chia-Yen ,  Lee, Peng-Hsin

IPC分类号： H01L23/495 ,  H01L23/31

CPC分类号： H01L23/495 ,  H01L23/3107 ,  H01L23/3171 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49527 ,  H01L23/49531 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/5221 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L25/18 ,  H01L2224/16245 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37139 ,  H01L2224/37144 ,  H01L2224/37147 ,  H01L2224/37155 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/73255 ,  H01L2924/00014 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/84

公开(公告)号：EP2950341A3

公开(公告)日：2015-12-30

申请号：EP14188188.8

申请日：2014-10-08

申请人： Delta Electronics, Inc.

发明人： Tsai, Hsin-Chang ,  Lee, Chia-Yen ,  Lee, Peng-Hsin

IPC分类号： H01L23/495

摘要： A semiconductor device includes a lead frame, a first semiconductor component, a second semiconductor component, and a first conductive member. The lead frame includes a first segment having a first bottom plate, and a second segment having a second bottom plate. The first segment and the second segment are arranged side by side, the first bottom plate is spatially isolated from the second bottom plate, and the first bottom plate is thicker than the second bottom plate. The first semiconductor component is disposed on the first bottom plate, and the second semiconductor component is disposed on the second bottom plate. The second semiconductor component is thicker than the first semiconductor component. The first conductive member electrically connects the second semiconductor component to the first segment.

公开(公告)号：EP2840605A3

公开(公告)日：2015-03-04

申请号：EP13183554.8

申请日：2013-09-09

申请人： Delta Electronics, Inc.

发明人： Tsai, Hsin-Chang ,  Lee, Chia-Yen ,  Lee, Peng-Hsin

IPC分类号： H01L23/495 ,  H01L23/31

CPC分类号： H01L23/495 ,  H01L23/3107 ,  H01L23/3171 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49527 ,  H01L23/49531 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/5221 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L25/18 ,  H01L2224/16245 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37139 ,  H01L2224/37144 ,  H01L2224/37147 ,  H01L2224/37155 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/73255 ,  H01L2924/00014 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/84

摘要： A semiconductor component comprising a lateral semiconductor device, a vertical semiconductor device, and a leadframe is provided. The lateral semiconductor device has a first side and a second side, and a first electrode, a second electrode, and a control electrode positioned on the first side. The vertical semiconductor device has a first side and a second side, a second electrode and a control electrode of it positioned on the second side and a first electrode of it positioned on the first side. The leadframe electrically and respectively connected to each of the first electrode of the lateral semiconductor device, the second electrode of the lateral semiconductor device, the second electrode of the vertical semiconductor device, and the control electrodes, wherein the first side of the vertical semiconductor device is mounted on the second side of the lateral semiconductor device, and the first electrodes of both devices are electrically connected.

摘要翻译： 本发明提供一种半导体部件，其包括横向半导体器件，垂直半导体器件，和引线框架。 该横向半导体器件具有第一侧和第二侧，以及第一电极，第二电极和位于所述第一侧的控制电极。 的垂直半导体器件具有第一侧和第二侧，第二电极和设置在第二侧的它的控制电极和位于所述第一侧的它的第一电极。 引线框架电气地和分别连接到每个横向半导体器件中，横向半导体器件的第二电极，所述垂直半导体器件的第二电极，以及控制电极的所述第一电极的，worin的垂直半导体器件的第一侧 被安装在横向半导体器件的所述第二侧，并且这两个装置的第一电极电连接。

公开(公告)号：EP2731133A2

公开(公告)日：2014-05-14

申请号：EP13191022.6

申请日：2013-10-31

申请人： Delta Electronics, Inc.

发明人： Tsai, Hsin-Chang ,  Lee, Chia-Yen ,  Lee, Peng-Hsin

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L21/76898 ,  H01L21/268 ,  H01L21/2885 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76895 ,  H01L23/481 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/91 ,  H01L25/074 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/02372 ,  H01L2224/0332 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/05557 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16146 ,  H01L2224/16147 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/17181 ,  H01L2224/73221 ,  H01L2224/73255 ,  H01L2224/73257 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/13064 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/05552

摘要： A method of forming an interconnection structure is disclosed, including providing a substrate having a first side and a second side opposite to the first side, forming a via hole through the substrate, wherein the via hole has a first opening in the first side and a second opening in the second side, forming a first pad covering the first opening, and forming a via structure in the via hole subsequent to forming the first pad, wherein the via structure includes a conductive material and is adjoined to the first pad.

摘要翻译： 公开了一种形成互连结构的方法，包括提供具有第一侧和与第一侧相对的第二侧的基板，通过基板形成通孔，其中通孔在第一侧具有第一开口， 在所述第二侧上形成第二开口，形成覆盖所述第一开口的第一焊盘，以及在形成所述第一焊盘之后在所述通孔中形成通孔结构，其中所述通孔结构包括导电材料并与所述第一焊盘邻接。

公开(公告)号：EP2950341B1

公开(公告)日：2020-07-29

申请号：EP14188188.8

申请日：2014-10-08

申请人： Delta Electronics, Inc.

发明人： Tsai, Hsin-Chang ,  Lee, Chia-Yen ,  Lee, Peng-Hsin

IPC分类号： H01L23/495

公开(公告)号：EP2950341A2

公开(公告)日：2015-12-02

申请号：EP14188188.8

申请日：2014-10-08

申请人： Delta Electronics, Inc.

发明人： Tsai, Hsin-Chang ,  Lee, Chia-Yen ,  Lee, Peng-Hsin

IPC分类号： H01L23/495

摘要： A semiconductor device includes a lead frame, a first semiconductor component, a second semiconductor component, and a first conductive member. The lead frame includes a first segment having a first bottom plate, and a second segment having a second bottom plate. The first segment and the second segment are arranged side by side, the first bottom plate is spatially isolated from the second bottom plate, and the first bottom plate is thicker than the second bottom plate. The first semiconductor component is disposed on the first bottom plate, and the second semiconductor component is disposed on the second bottom plate. The second semiconductor component is thicker than the first semiconductor component. The first conductive member electrically connects the second semiconductor component to the first segment.

摘要翻译： 一种半导体器件包括引线框架，第一半导体部件，第二半导体部件和第一导电部件。 引线框架包括具有第一底板的第一段和具有第二底板的第二段。 第一区段和第二区段并排布置，第一底板与第二底板空间隔离，并且第一底板比第二底板厚。 第一半导体元件设置在第一底板上，第二半导体元件设置在第二底板上。 第二半导体部件比第一半导体部件厚。 第一导电构件将第二半导体组件电连接到第一段。

公开(公告)号：EP2819157A1

公开(公告)日：2014-12-31

申请号：EP13183564.7

申请日：2013-09-09

申请人： Delta Electronics, Inc.

发明人： Lee, Chia-Yen ,  Tsai, Hsin-Chang ,  Lee, Peng-Hsin

IPC分类号： H01L23/00 ,  H01L23/495

CPC分类号： H01L24/85 ,  H01L23/492 ,  H01L23/49894 ,  H01L23/5389 ,  H01L24/06 ,  H01L24/16 ,  H01L24/24 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/82 ,  H01L2224/0401 ,  H01L2224/06181 ,  H01L2224/16245 ,  H01L2224/24137 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/73267 ,  H01L2224/82031 ,  H01L2224/82039 ,  H01L2224/82101 ,  H01L2224/85 ,  H01L2224/92244 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： The disclosure provides an embedded package structure comprising a metal substrate (210a), a chip module (220a), an insulation material layer (230a), and at least one patterned metal layer (240a). The metal substrate (210a) has a first surface (211a) and a second surface (212a). The chip module (220a) is disposed on the first surface of the metal substrate, and comprises at least two stacked chips (222a,221a) being electrically connected to each. The insulation material layer (230a) covers the first surface of the metal substrate and the stacked chips and has an electrical interconnection (231a) formed therein. The patterned metal layer (240a) is positioned on the insulation material layer, and is electrically connected the chip module through the electrical interconnection. The method for manufacturing the embedded package structure is also disclosed.

摘要翻译： 本公开提供了一种嵌入式封装结构，其包括金属基板（210a），芯片模块（220a），绝缘材料层（230a）和至少一个图案化金属层（240a）。 金属基板（210a）具有第一表面（211a）和第二表面（212a）。 芯片模块（220a）设置在金属基板的第一表面上，并且包括至少两个彼此电连接的堆叠的芯片（222a，221a）。 绝缘材料层（230a）覆盖金属基板的第一表面和堆叠的芯片，并且其中形成有电互连（231a）。 图案化的金属层（240a）位于绝缘材料层上，并且通过电互连电连接芯片模块。 还公开了用于制造嵌入式封装结构的方法。

公开(公告)号：EP2731132A3

公开(公告)日：2017-05-17

申请号：EP13191021.8

申请日：2013-10-31

申请人： Delta Electronics, Inc.

发明人： Lee, Chia-Yen ,  Tsai, Hsin-Chang ,  Lee, Peng-Hsin

IPC分类号： H01L23/48 ,  H01L21/768 ,  H01L21/60 ,  H01L25/065 ,  H01L23/485

CPC分类号： H01L21/76898 ,  H01L21/268 ,  H01L21/2885 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76895 ,  H01L23/481 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/91 ,  H01L25/074 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/02372 ,  H01L2224/0332 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/05557 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16146 ,  H01L2224/16147 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/17181 ,  H01L2224/73221 ,  H01L2224/73255 ,  H01L2224/73257 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/13064 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/05552

摘要： A package structure including: a first semiconductor device including a first semiconductor substrate and a first electronic device, the first semiconductor device having a first side and a second side, wherein at least part of the first electronic device being adjacent to the first side, and the first semiconductor device has a via-hole formed through the first semiconductor device, wherein the via-hole has a first opening adjacent to the first side; an interconnection structure disposed in the first semiconductor device, wherein the interconnection structure includes: a via structure disposed in the via-hole without exceeding the first opening; a first pad disposed on the first side of the first semiconductor device and covering the via-hole; and a second semiconductor device vertically integrated with the first semiconductor device.

摘要翻译： 一种封装结构，包括：第一半导体器件，包括第一半导体衬底和第一电子器件，所述第一半导体器件具有第一侧和第二侧，其中所述第一电子器件的至少一部分与所述第一侧相邻，以及 所述第一半导体器件具有穿过所述第一半导体器件形成的通孔，其中所述通孔具有与所述第一侧相邻的第一开口; 布置在所述第一半导体器件中的互连结构，其中所述互连结构包括：通孔结构，设置在所述通孔中而不超过所述第一开口; 布置在第一半导体器件的第一侧上并覆盖通孔的第一焊盘; 以及与第一半导体器件垂直集成的第二半导体器件。

公开(公告)号：EP2881985A1

公开(公告)日：2015-06-10

申请号：EP14197415.4

申请日：2013-09-09

申请人： Delta Electronics, Inc.

发明人： Lee, Chia-Yen ,  Tsai, Hsin-Chang ,  Lee, Peng-Hsin

IPC分类号： H01L23/492 ,  H01L23/538

CPC分类号： H01L24/85 ,  H01L23/492 ,  H01L23/49894 ,  H01L23/5389 ,  H01L24/06 ,  H01L24/16 ,  H01L24/24 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/82 ,  H01L2224/0401 ,  H01L2224/06181 ,  H01L2224/16245 ,  H01L2224/24137 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/73267 ,  H01L2224/82031 ,  H01L2224/82039 ,  H01L2224/82101 ,  H01L2224/85 ,  H01L2224/92244 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： The disclosure provides an embedded package structure comprising a metal substrate (210a), a chip module (220a), an insulation material layer (230a), and at least one patterned metal layer (240a). The metal substrate (210a) has a first surface (211a) and a second surface (212a). The chip module (220a) is disposed on the first surface of the metal substrate, and comprises at least two stacked chips (222a,221a) being electrically connected to each. A adhesive layer or a solder (260a) is positioned between the stacked chips. The insulation material layer (230a) covers the first surface of the metal substrate and the stacked chips and has an electrical interconnection (231a) formed therein. The patterned metal layer (240a) is positioned on the insulation material layer, and is electrically connected the chip module through the electrical interconnection. The method for manufacturing the embedded package structure also provides.

摘要翻译： 本公开提供了一种嵌入式封装结构，其包括金属基板（210a），芯片模块（220a），绝缘材料层（230a）和至少一个图案化金属层（240a）。 金属基板（210a）具有第一表面（211a）和第二表面（212a）。 芯片模块（220a）设置在金属基板的第一表面上，并且包括至少两个彼此电连接的堆叠的芯片（222a，221a）。 粘合剂层或焊料（260a）位于堆叠的芯片之间。 绝缘材料层（230a）覆盖金属基板的第一表面和堆叠的芯片，并且其中形成有电互连（231a）。 图案化的金属层（240a）位于绝缘材料层上，并且通过电互连电连接芯片模块。 嵌入式封装结构的制造方法也提供了。