公开(公告)号：EP2731132A3

公开(公告)日：2017-05-17

申请号：EP13191021.8

申请日：2013-10-31

申请人： Delta Electronics, Inc.

发明人： Lee, Chia-Yen ,  Tsai, Hsin-Chang ,  Lee, Peng-Hsin

IPC分类号： H01L23/48 ,  H01L21/768 ,  H01L21/60 ,  H01L25/065 ,  H01L23/485

CPC分类号： H01L21/76898 ,  H01L21/268 ,  H01L21/2885 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76895 ,  H01L23/481 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/91 ,  H01L25/074 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/02372 ,  H01L2224/0332 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/05557 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16146 ,  H01L2224/16147 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/17181 ,  H01L2224/73221 ,  H01L2224/73255 ,  H01L2224/73257 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/13064 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/05552

摘要： A package structure including: a first semiconductor device including a first semiconductor substrate and a first electronic device, the first semiconductor device having a first side and a second side, wherein at least part of the first electronic device being adjacent to the first side, and the first semiconductor device has a via-hole formed through the first semiconductor device, wherein the via-hole has a first opening adjacent to the first side; an interconnection structure disposed in the first semiconductor device, wherein the interconnection structure includes: a via structure disposed in the via-hole without exceeding the first opening; a first pad disposed on the first side of the first semiconductor device and covering the via-hole; and a second semiconductor device vertically integrated with the first semiconductor device.

摘要翻译： 一种封装结构，包括：第一半导体器件，包括第一半导体衬底和第一电子器件，所述第一半导体器件具有第一侧和第二侧，其中所述第一电子器件的至少一部分与所述第一侧相邻，以及 所述第一半导体器件具有穿过所述第一半导体器件形成的通孔，其中所述通孔具有与所述第一侧相邻的第一开口; 布置在所述第一半导体器件中的互连结构，其中所述互连结构包括：通孔结构，设置在所述通孔中而不超过所述第一开口; 布置在第一半导体器件的第一侧上并覆盖通孔的第一焊盘; 以及与第一半导体器件垂直集成的第二半导体器件。

公开(公告)号：EP2731132A2

公开(公告)日：2014-05-14

申请号：EP13191021.8

申请日：2013-10-31

申请人： Delta Electronics, Inc.

发明人： Lee, Chia-Yen ,  Tsai, Hsin-Chang ,  Lee, Peng-Hsin

IPC分类号： H01L23/48 ,  H01L21/768 ,  H01L21/60 ,  H01L25/065

CPC分类号： H01L21/76898 ,  H01L21/268 ,  H01L21/2885 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76895 ,  H01L23/481 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/91 ,  H01L25/074 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/02372 ,  H01L2224/0332 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/05557 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16146 ,  H01L2224/16147 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/17181 ,  H01L2224/73221 ,  H01L2224/73255 ,  H01L2224/73257 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/13064 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/05552

摘要： A package structure including: a first semiconductor device including a first semiconductor substrate and a first electronic device, the first semiconductor device having a first side and a second side, wherein at least part of the first electronic device being adjacent to the first side, and the first semiconductor device has a via-hole formed through the first semiconductor device, wherein the via-hole has a first opening adjacent to the first side; an interconnection structure disposed in the first semiconductor device, wherein the interconnection structure includes: a via structure disposed in the via-hole without exceeding the first opening; a first pad disposed on the first side of the first semiconductor device and covering the via-hole; and a second semiconductor device vertically integrated with the first semiconductor device.

摘要翻译： 一种封装结构，包括：第一半导体器件，包括第一半导体衬底和第一电子器件，所述第一半导体器件具有第一侧和第二侧，其中所述第一电子器件的至少一部分与所述第一侧相邻，以及 第一半导体器件具有通过第一半导体器件形成的通孔，其中通孔具有与第一侧相邻的第一开口; 布置在所述第一半导体器件中的互连结构，其中所述互连结构包括：通孔结构，其设置在所述通孔中而不超过所述第一开口; 第一焊盘，设置在第一半导体器件的第一侧并覆盖通孔; 以及与第一半导体器件垂直集成的第二半导体器件。

公开(公告)号：EP1759422A2

公开(公告)日：2007-03-07

申请号：EP05755193.9

申请日：2005-06-02

申请人： THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS

发明人： NUZZO, Ralph, G. ,  ROGERS, John, A. ,  MENARD, Etienne ,  LEE, Keon Jae ,  KHANG, Dahl-Young ,  SUN, Yugang ,  MEITL, Matthew ,  ZHU, Zhengtao

IPC分类号： H01L31/0312

CPC分类号： H01L29/76 ,  B81C2201/0185 ,  B82Y10/00 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02628 ,  H01L21/308 ,  H01L21/322 ,  H01L21/6835 ,  H01L23/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/29 ,  H01L24/32 ,  H01L24/80 ,  H01L24/83 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0753 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/04 ,  H01L29/06 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/12 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/78696 ,  H01L31/0392 ,  H01L31/03926 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1896 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/32 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2224/03 ,  H01L2224/0332 ,  H01L2224/0345 ,  H01L2224/03614 ,  H01L2224/0362 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/08225 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/80 ,  H01L2224/80006 ,  H01L2224/80121 ,  H01L2224/80862 ,  H01L2224/80895 ,  H01L2224/83 ,  H01L2224/83005 ,  H01L2224/83121 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/8385 ,  H01L2224/83862 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2224/95 ,  H01L2224/97 ,  H01L2924/00012 ,  H01L2924/01032 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15159 ,  H01L2924/15162 ,  H01L2924/15788 ,  H01L2924/1579 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S977/707 ,  Y10S977/724 ,  H01L2924/00014 ,  H01L2924/00

摘要： The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

公开(公告)号：EP2650905A3

公开(公告)日：2014-10-01

申请号：EP13003426.7

申请日：2005-06-02

申请人： The Board of Trustees of the University of Illinois

发明人： Nuzzo, Ralph G. ,  Rogers, John, A. ,  Menard, Etienne ,  Lee, Keon Jae ,  Khang, Dahl-Young ,  Sun, Yugang ,  Meitl, Matthew ,  Zhu, Zhengtao

IPC分类号： H01L21/30 ,  H01L21/326 ,  H01L21/4763 ,  H01L23/48 ,  H01L27/01 ,  H01L29/06 ,  H01L29/08 ,  H01L21/02

CPC分类号： H01L29/76 ,  B81C2201/0185 ,  B82Y10/00 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02628 ,  H01L21/308 ,  H01L21/322 ,  H01L21/6835 ,  H01L23/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/29 ,  H01L24/32 ,  H01L24/80 ,  H01L24/83 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0753 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/04 ,  H01L29/06 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/12 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/78696 ,  H01L31/0392 ,  H01L31/03926 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1896 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/32 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2224/03 ,  H01L2224/0332 ,  H01L2224/0345 ,  H01L2224/03614 ,  H01L2224/0362 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/08225 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/80 ,  H01L2224/80006 ,  H01L2224/80121 ,  H01L2224/80862 ,  H01L2224/80895 ,  H01L2224/83 ,  H01L2224/83005 ,  H01L2224/83121 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/8385 ,  H01L2224/83862 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2224/95 ,  H01L2224/97 ,  H01L2924/00012 ,  H01L2924/01032 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15159 ,  H01L2924/15162 ,  H01L2924/15788 ,  H01L2924/1579 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S977/707 ,  Y10S977/724 ,  H01L2924/00014 ,  H01L2924/00

摘要： The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

公开(公告)号：EP2731133A2

公开(公告)日：2014-05-14

申请号：EP13191022.6

申请日：2013-10-31

申请人： Delta Electronics, Inc.

发明人： Tsai, Hsin-Chang ,  Lee, Chia-Yen ,  Lee, Peng-Hsin

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L21/76898 ,  H01L21/268 ,  H01L21/2885 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76895 ,  H01L23/481 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/91 ,  H01L25/074 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/02372 ,  H01L2224/0332 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/05557 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16146 ,  H01L2224/16147 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/17181 ,  H01L2224/73221 ,  H01L2224/73255 ,  H01L2224/73257 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/13064 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/05552

摘要： A method of forming an interconnection structure is disclosed, including providing a substrate having a first side and a second side opposite to the first side, forming a via hole through the substrate, wherein the via hole has a first opening in the first side and a second opening in the second side, forming a first pad covering the first opening, and forming a via structure in the via hole subsequent to forming the first pad, wherein the via structure includes a conductive material and is adjoined to the first pad.

摘要翻译： 公开了一种形成互连结构的方法，包括提供具有第一侧和与第一侧相对的第二侧的基板，通过基板形成通孔，其中通孔在第一侧具有第一开口， 在所述第二侧上形成第二开口，形成覆盖所述第一开口的第一焊盘，以及在形成所述第一焊盘之后在所述通孔中形成通孔结构，其中所述通孔结构包括导电材料并与所述第一焊盘邻接。

公开(公告)号：EP1517369A2

公开(公告)日：2005-03-23

申请号：EP04255574.8

申请日：2004-09-15

申请人： Minami Co. Ltd.

发明人： Murakami, Takehiko c/o Minami Co. Ltd.

IPC分类号： H01L23/31 ,  H01L23/485

CPC分类号： H01L23/3114 ,  H01L23/293 ,  H01L23/3192 ,  H01L23/525 ,  H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0236 ,  H01L2224/024 ,  H01L2224/0332 ,  H01L2224/0401 ,  H01L2224/05567 ,  H01L2224/05569 ,  H01L2224/056 ,  H01L2224/1132 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/351 ,  H01L2224/05552 ,  H01L2924/00

摘要： To widely improve an entire manufacturing efficiency by efficiently forming a thermal stress relaxing post, an insulating layer and a solder bump, arewiringcircuit (3) is formedonawafer (1) byplating, a thermal stress relaxing post (4) made of a conductive material such as a solder or the like is formed on the rewiring circuit (3), an insulating layer (6) made of a polyimide or the like is formed in the periphery of the rewiring circuit (3) and the thermal stress relaxing post (4) except a top surface of the thermal stress relaxing post (4), a solder bump (7) is formed on the thermal stress relaxing post (4), and the thermal stress relaxing post (4), the insulating layer (6) and the solder bump (7) are formed by screen printing.

摘要翻译： 为了通过有效地形成热应力缓和柱，绝缘层和焊料凸块来广泛提高整体制造效率，在电镀（1）中形成有电流（3），即由导电材料制成的热应力放松柱（4），例如 在再布线电路（3）上形成焊料等，在再配线电路（3）和热应力放松柱（4）的周围形成由聚酰亚胺等构成的绝缘层（6），除了 热应力放松柱（4）的顶表面，在热应力松弛柱（4）上形成焊料凸块（7），并且热应力松弛柱（4），绝缘层（6）和焊料 凸起（7）通过丝网印刷形成。

公开(公告)号：EP2979783A1

公开(公告)日：2016-02-03

申请号：EP14178768.9

申请日：2014-07-28

申请人： Heraeus Deutschland GmbH & Co. KG

发明人： Schäfer, Michael ,  Schmitt, Wolfgang

IPC分类号： B22F5/00 ,  B22F7/04 ,  H05K3/00 ,  H01L23/00

CPC分类号： B22F5/006 ,  B22F7/04 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/80 ,  H01L24/83 ,  H01L2224/0332 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/03505 ,  H01L2224/0351 ,  H01L2224/038 ,  H01L2224/03821 ,  H01L2224/03822 ,  H01L2224/04026 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05139 ,  H01L2224/05147 ,  H01L2224/05164 ,  H01L2224/05187 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/05687 ,  H01L2224/0569 ,  H01L2224/05794 ,  H01L2224/058 ,  H01L2224/05839 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/08245 ,  H01L2224/2732 ,  H01L2224/27505 ,  H01L2224/2751 ,  H01L2224/278 ,  H01L2224/27821 ,  H01L2224/27822 ,  H01L2224/29082 ,  H01L2224/29083 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/29164 ,  H01L2224/29187 ,  H01L2224/2919 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/29339 ,  H01L2224/32145 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/80055 ,  H01L2224/80065 ,  H01L2224/80075 ,  H01L2224/80203 ,  H01L2224/80395 ,  H01L2224/80439 ,  H01L2224/80447 ,  H01L2224/80464 ,  H01L2224/80487 ,  H01L2224/8084 ,  H01L2224/83055 ,  H01L2224/83065 ,  H01L2224/83075 ,  H01L2224/83203 ,  H01L2224/83395 ,  H01L2224/83439 ,  H01L2224/83447 ,  H01L2224/83464 ,  H01L2224/83487 ,  H01L2224/8384 ,  H01L2924/13055 ,  H01L2924/13091 ,  H05K3/32 ,  H05K2201/10166 ,  H05K2203/0315 ,  H05K2203/0789 ,  H05K2203/1131 ,  H05K2203/1163 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/0541 ,  H01L2924/01047

摘要： Verfahren zum Verbinden von Bauelementen, bei dem man eine Anordnung aus wenigstens zwei Bauelementen mit einer aus metallischen Kontaktoberflächen der beiden Bauelemente gebildeten gemeinsamen Kontaktfläche bereitstellt und die Anordnung drucksintert, wobei die metallische Kontaktoberfläche wenigstens eines der beiden Bauelemente mit einer Metalloxidschicht bedeckt ist, und wobei (I) das Drucksintern in einer mindestens eine oxidierbare Verbindung enthaltenden Atmosphäre durchgeführt und/oder (II) die Metalloxidschicht vor Bildung der gemeinsamen Kontaktfläche mit mindestens einer oxidierbaren organischen Verbindung versehen wird.

摘要翻译： 用于连接部件的方法，其中提供至少两种组分的包含两种组分共同接触面的金属接触表面的形成，并且drucksintert的布置，其中，与金属氧化物层中的两种组分的金属接触表面至少覆盖的布置，并且其中（ I）在加压烧结进行至少一种可氧化化合物含有气氛和/或（II）的金属氧化物层之前，形成所述公共的接触面的设置有至少一种可氧化的有机化合物。

公开(公告)号：EP2657962A1

公开(公告)日：2013-10-30

申请号：EP13275090.2

申请日：2013-04-16

申请人： Napra Co., Ltd.

发明人： Sekine, Shigenobu ,  Sekine, Yurina

IPC分类号： H01L21/48 ,  H01L21/60 ,  H01L23/498 ,  H01L23/485 ,  H01L31/0224 ,  H01L33/40 ,  H01L33/62 ,  H01B1/22

CPC分类号： H01L23/48 ,  H01B1/22 ,  H01L21/4867 ,  H01L21/563 ,  H01L23/498 ,  H01L23/49838 ,  H01L23/49866 ,  H01L23/49883 ,  H01L23/49894 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/16 ,  H01L31/022425 ,  H01L31/0682 ,  H01L33/62 ,  H01L2224/0332 ,  H01L2224/0341 ,  H01L2224/03848 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05205 ,  H01L2224/05209 ,  H01L2224/05211 ,  H01L2224/05213 ,  H01L2224/05318 ,  H01L2224/05324 ,  H01L2224/05338 ,  H01L2224/05339 ,  H01L2224/05344 ,  H01L2224/05347 ,  H01L2224/05355 ,  H01L2224/0536 ,  H01L2224/05366 ,  H01L2224/05369 ,  H01L2224/05562 ,  H01L2224/0569 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/17181 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81375 ,  H01L2224/81395 ,  H01L2224/81505 ,  H01L2224/81509 ,  H01L2224/81511 ,  H01L2224/81513 ,  H01L2224/81618 ,  H01L2224/81624 ,  H01L2224/81638 ,  H01L2224/81639 ,  H01L2224/81644 ,  H01L2224/81647 ,  H01L2224/81655 ,  H01L2224/8166 ,  H01L2224/81666 ,  H01L2224/81669 ,  H01L2224/831 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2924/00014 ,  H01L2924/01327 ,  H01L2924/12041 ,  H01L2924/15747 ,  H01L2933/0016 ,  H01L2933/0066 ,  Y02E10/547 ,  H01L2924/01014 ,  H01L2924/00 ,  H01L2224/05552

摘要： An electronic device includes a substrate (11, 14B) and an electronic component (141-146, 14A, 14C, 140). The substrate (11, 14B) has a metallization trace (12, 12n, 12p). The metallization trace (12, 12n, 12p) has a metallization layer (121, 121n, 121p) and a synthetic resin layer (122, 122n, 122p). The metallization layer (121, 121n, 121p) has a high-melting-point metallic component (124) and a low-melting-point metallic component (123). The high-melting-point metallic component (124) and the low-melting-point metallic component (123) are diffusion bonded together and adhered to a surface of the substrate (11, 14B). The synthetic resin layer (122, 122n, 122p) is formed simultaneously with the metallization layer (121, 121n, 121p) to cover a surface of the metallization layer (121, 121n, 121p) with a thickness in the range of 5 nm to 1000 nm, preferably 5 nm to 500 nm. The electronic component (141-146, 14A, 14C, 140) is electrically connected to the metallization layer (121, 121n, 121p). The high-melting-point metallic particles (124) and the low-melting-point metallic particles (123) may have a nanocomposite structure.

摘要翻译： 一种电子装置，包括：基板（11，14B）和电子部件（141-146，14A，14C，140）。 基板（11，14B）具有金属化迹线（12，12N，12P）。 金属化迹线（12，12N，12P）具有的金属化层（121，121N，121P）和合成树脂层（122，122n的，122P）。 金属化层（121，121N，121P）具有高融点金属成分（124）和低融点金属成分（123）。 高融点金属成分（124）和低融点金属成分（123）是扩散粘合在一起并且粘附到基片的一个表面（11，14B）。 的合成树脂层（122，122n的，122P）与金属化层（121，121N，121P）同时形成以覆盖所述金属化层（121，121N，121P）的表面，其厚度为5nm到范围 1000nm，优选为5nm至500nm。所述的电子组件（141-146，14A，14C，140）电连接至所述金属化层（121，121N，121P）。 高融点金属颗粒（124）和低融点金属颗粒（123）可具有纳米复合结构。

公开(公告)号：EP2445000A3

公开(公告)日：2013-06-05

申请号：EP11290473.5

申请日：2011-10-13

申请人： Soitec

发明人： Landru, Didier

IPC分类号： H01L21/60 ,  H01L23/485 ,  H01L25/065

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/80 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0332 ,  H01L2224/034 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03616 ,  H01L2224/05006 ,  H01L2224/05082 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05187 ,  H01L2224/05546 ,  H01L2224/05547 ,  H01L2224/05576 ,  H01L2224/05578 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05681 ,  H01L2224/05687 ,  H01L2224/08121 ,  H01L2224/80203 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2225/06513 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/00014 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/04941 ,  H01L2924/00

摘要： The present invention relates to a process for realizing a connecting structure (2200) in a semiconductor substrate (1000), and the semiconductor substrate realized accordingly. The process of the present invention, the semiconductor substrate (1000) having at least a first surface, and being foreseen for a 3D integration with a second substrate (1700) along the first surface, wherein the 3D integration is subject to a lateral misalignment in at least one dimension having a misalignment value, can include the step of growing a diffusion barrier structure (2211) for preventing diffusion of elements out of a conductive layer into the rest of the semiconductor substrate, is characterized in that a first end surface, being the most outward surface of the diffusion barrier structure (2211) being substantially parallel to the first surface, along a direction perpendicular to the first surface and going from the substrate toward the first surface, of the diffusion barrier structure (2211) can have a length, in the direction of the lateral misalignment, the length being dependent on the misalignment value, wherein the length of the diffusion barrier structure (2211) is chosen such that in a 3D integrated structure a diffusion of elements out of a conductive layer of the second substrate (1700) is prevented in the integrated state.

公开(公告)号：EP1759422A4

公开(公告)日：2011-04-06

申请号：EP05755193

申请日：2005-06-02

申请人： UNIV ILLINOIS

发明人： NUZZO RALPH G ,  ROGERS JOHN A ,  MENARD ETIENNE ,  LEE KEON JAE ,  KHANG DAHL-YOUNG ,  SUN YUGANG ,  MEITL MATTHEW ,  ZHU ZHENGTAO

IPC分类号： H01L21/20 ,  B81C1/00 ,  H01L21/02 ,  H01L21/30 ,  H01L21/326 ,  H01L21/4763 ,  H01L21/77 ,  H01L23/48 ,  H01L27/01 ,  H01L29/06 ,  H01L29/08 ,  H01L29/786 ,  H01L31/0312 ,  H01L31/18

CPC分类号： H01L23/02 ,  B81C2201/0185 ,  B82Y10/00 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02628 ,  H01L21/308 ,  H01L21/322 ,  H01L21/6835 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/29 ,  H01L24/32 ,  H01L24/80 ,  H01L24/83 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0753 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/04 ,  H01L29/06 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/12 ,  H01L29/76 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/78696 ,  H01L31/0392 ,  H01L31/03926 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1896 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/32 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2224/03 ,  H01L2224/0332 ,  H01L2224/0345 ,  H01L2224/03614 ,  H01L2224/0362 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/08225 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/80 ,  H01L2224/80006 ,  H01L2224/80121 ,  H01L2224/80862 ,  H01L2224/80895 ,  H01L2224/83 ,  H01L2224/83005 ,  H01L2224/83121 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/8385 ,  H01L2224/83862 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2224/95 ,  H01L2224/97 ,  H01L2924/00012 ,  H01L2924/01032 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15159 ,  H01L2924/15162 ,  H01L2924/15788 ,  H01L2924/1579 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S977/707 ,  Y10S977/724 ,  H01L2924/00014 ,  H01L2924/00

摘要： The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

摘要翻译： 本发明提供了用于制造可印刷的半导体元件和组装可印刷的半导体元件到衬底上表面的方法和装置。 方法，设备和设备部件本发明的能够产生宽范围的柔性电子和光电子器件和基底包含聚合物材料上的设备的阵列。 本发明因此提供了可拉伸的半导体结构，并且能够在拉伸构型良好的性能可拉伸电子器件。