公开(公告)号：EP0971411B1

公开(公告)日：2007-02-21

申请号：EP99112588.1

申请日：1999-07-01

Applicant: Hitachi, Ltd. ,  Hitachi Tohbu Semiconductor,Ltd.

Inventor： Kohjiro, Iwamichi ,  Kikuchi, Sakae ,  Nunogawa, Yasuhiro ,  Kondo, Shizuo ,  Adachi, Tetsuaki ,  Kagaya, Osamu ,  Sekine, Kenji ,  Hase, Eiichi ,  Yamashita, Kiichi

IPC: H01L23/66 ,  H01L23/50

CPC classification number: H01L24/06 ,  H01L23/04 ,  H01L23/49805 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/552 ,  H01L23/645 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L2223/6611 ,  H01L2223/6627 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/45669 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/48799 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/4912 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15173 ,  H01L2924/15313 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/19032 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F1/56 ,  H03F3/195 ,  H03F3/213 ,  H03F3/604 ,  H03F2200/12 ,  H03F2200/168 ,  H03F2200/222 ,  H03F2200/255 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/408 ,  H03F2200/411 ,  H03F2200/423 ,  H03F2200/451 ,  H03F2200/543 ,  H03H7/383 ,  H05K1/0243 ,  H05K1/0298 ,  H05K1/183 ,  H05K3/403 ,  H01L2924/05432 ,  H01L2924/2065 ,  H01L2224/45099 ,  H01L2924/00

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip (1000) which is mounted on a main surface of a wiring substrate (6000), and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is placed at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is. Particularly, in a high-frequency power amplifier module provided with a semiconductor chip having multistage amplifying transistors (2000,3000) on a wiring substrate: an angle formed by a first auxiliary line connecting bonding portions to each other at the two ends of an input bonding wire (9000D) connecting a bonding input electrode (2000B) for a specific one of the amplifying transistors to the wiring substrate arid a second auxiliary line connecting bonding portions to each other at the two ends of an output bonding wire (9000A) connecting an bonding output electrode (3000C) for another amplifying transistor at a stage following the specific amplifying transistor to the wiring substrate is in the range 72 degrees to 180 degrees; and a gap between bonding portions of the bonding input electrode and the bonding output electrode is at least 0.3 mm but smaller than 0.8 mm. As a result, the high-frequency characteristic of the power amplifier module can be improved and the size thereof can be reduced.

公开(公告)号：EP1770777A2

公开(公告)日：2007-04-04

申请号：EP06027122.8

申请日：1999-07-01

Applicant: HITACHI, LTD. ,  Hitachi Tohbu Semiconductor,Ltd.

Inventor： Kohjiro, Iwamichi ,  Kikuchi, Sakae ,  Nunogawa, Yasuhiro ,  Kondo, Shizuo ,  Adachi, Tetsuaki ,  Kagaya, Osamu ,  Sekine, Kenji ,  Hase, Eiichi ,  Yamashita, Kiichi

IPC: H01L23/66

CPC classification number: H01L24/06 ,  H01L23/04 ,  H01L23/49805 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/552 ,  H01L23/645 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L2223/6611 ,  H01L2223/6627 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/45669 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/48799 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/4912 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15173 ,  H01L2924/15313 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/19032 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F1/56 ,  H03F3/195 ,  H03F3/213 ,  H03F3/604 ,  H03F2200/12 ,  H03F2200/168 ,  H03F2200/222 ,  H03F2200/255 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/408 ,  H03F2200/411 ,  H03F2200/423 ,  H03F2200/451 ,  H03F2200/543 ,  H03H7/383 ,  H05K1/0243 ,  H05K1/0298 ,  H05K1/183 ,  H05K3/403 ,  H01L2924/05432 ,  H01L2924/2065 ,  H01L2224/45099 ,  H01L2924/00

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is placed at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is. Particularly, in a high-frequency power amplifier module provided with a semiconductor chip having multistage amplifying transistors on a wiring substrate: an angle formed by a first auxiliary line connecting bonding portions to each other at the two ends of an input bonding wire connecting a bonding input electrode for a specific one of the amplifying transistors to the wiring substrate and a second auxiliary line connecting bonding portions to each other at the two ends of an output bonding wire connecting an bonding output electrode for another amplifying transistor at a stage following the specific amplifying transistor to the wiring substrate is in the range 72 degrees to 180 degrees; and a gap between bonding portions of the bonding input electrode and the bonding output electrode is at least 0.3 mm but smaller than 0.8 mm. As a result, the high-frequency characteristic of the power amplifier module can be improved and the size thereof can be reduced.

Abstract translation: 在诸如高频功率放大器模块的半导体器件中，在安装在布线基板（6000）的主表面上的半导体芯片（1000）上形成多个放大装置，并且半导体芯片的电极 通过导线与布线基板的电极电连接。 为了使高频功率放大器模块尺寸变小，将电连接到固定参考电位的线的衬底侧接合电极放置在比半导体芯片的离开半导体芯片的一侧更远的位置处， 电连接到输出线的侧面输出电极。 电连接到输入线的基板侧输入电极位于与半导体芯片的侧面相距一定距离处，等于从半导体芯片的侧面到基板侧输出电极的距离，或者距离半导体芯片 半导体芯片的侧面比基板侧接合电极为止。 具体地说，在具有在布线基板上具有多级放大晶体管（2000,3000）的半导体芯片的高频功率放大器模块中，由在输入端的两端彼此连接接合部的第一辅助线形成的角度 将用于特定一个放大晶体管的接合输入电极（2000B）连接到布线基板的接合线（9000D）和连接接合部的输出接合线（9000A）的两端彼此连接接合部的第二辅助线 另一放大晶体管的接合输出电极（3000C）在与特定放大晶体管相邻的阶段到布线基板处于72度至180度的范围内; 并且接合输入电极和接合输出电极的接合部之间的间隙为至少0.3mm但小于0.8mm。 结果，可以提高功率放大器模块的高频特性，并且可以减小其尺寸。

公开(公告)号：EP0280021A1

公开(公告)日：1988-08-31

申请号：EP88100521.9

申请日：1988-01-15

Applicant: HITACHI, LTD.

Inventor： Tanaka, Satoshi ,  Tanaka, Hirotoshi ,  Kinoshita, Taizo ,  Kotera, Nobuo ,  Nagata, Minoru ,  Yamashita, Kiichi ,  Watanabe, Tomoyuki

IPC: G05F3/24

CPC classification number: G05F3/245 ,  G05F3/247

Abstract: A constant voltage circuit according to this invention comprises first means (1) attenuating or dividing fluctuating voltage and an amplifying FET (Q₂), to the gate of which the output attenuated or divided by the first means (1) is applied and whose drain is connected with the fluctuating voltage through load means (2). The attenuation ratio or division ratio of the first means (1), the mutual conductance of the amplifying FET (Q₂) and the impedance of the load means (2) are so set that the voltage drop across the load means (2) cancels the fluctuating amount of the fluctuat­ing voltage. Consequently an output voltage, which is maintained substantially constant, is obtained at the drain of the amplifying FET (Q2), independently of fluctuations in the fluctuating voltage, and thus a constant voltage circuit can be obtained. A constant current circuit according to this invention utilizes the constant voltage circuit described above. The output voltage of the constant voltage circuit is supplied to the gate of the constant current FET (Q₃₁ - Q 3n ) Consequently a current, which is maintained substantially constant, flows through the drain-source path of this constant current FET (Q₃₁-Q 3n ) and thus a constant current circuit can be obtained.

Abstract translation: 根据本发明的恒定电压电路包括衰减或分压波动电压的第一装置（1）和放大FET（Q 2），其栅极上加有由第一装置（1）衰减或分开的输出，其漏极是 通过负载装置（2）与波动电压连接。 第一装置（1）的衰减比或分配比，放大FET（Q 2）的互导和负载装置（2）的阻抗被这样设置，使得跨负载装置（2）的电压降抵消了 波动电压的波动量。 因此，在放大FET（Q2）的漏极处获得基本上保持恒定的输出电压，而与波动电压的波动无关，从而可以获得恒定电压电路。 根据本发明的恒流电路利用上述的恒压电路。 恒压电路的输出电压提供给恒流FET（Q 31 -Q 3n）的栅极。因此，保持基本恒定的电流流过该恒流FET（Q 31 -Q 3n）的漏源路径， 并因此可以获得恒流电路。

公开(公告)号：EP1770777A3

公开(公告)日：2009-01-21

申请号：EP06027122.8

申请日：1999-07-01

Applicant: HITACHI, LTD. ,  Hitachi Tohbu Semiconductor,Ltd.

Inventor： Kohjiro, Iwamichi ,  Kikuchi, Sakae ,  Nunogawa, Yasuhiro ,  Kondo, Shizuo ,  Adachi, Tetsuaki ,  Kagaya, Osamu ,  Sekine, Kenji ,  Hase, Eiichi ,  Yamashita, Kiichi

IPC: H01L23/66 ,  H01L23/50

CPC classification number: H01L24/06 ,  H01L23/04 ,  H01L23/49805 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/552 ,  H01L23/645 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L2223/6611 ,  H01L2223/6627 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/45669 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/48799 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/4912 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15173 ,  H01L2924/15313 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/19032 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F1/56 ,  H03F3/195 ,  H03F3/213 ,  H03F3/604 ,  H03F2200/12 ,  H03F2200/168 ,  H03F2200/222 ,  H03F2200/255 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/408 ,  H03F2200/411 ,  H03F2200/423 ,  H03F2200/451 ,  H03F2200/543 ,  H03H7/383 ,  H05K1/0243 ,  H05K1/0298 ,  H05K1/183 ,  H05K3/403 ,  H01L2924/05432 ,  H01L2924/2065 ,  H01L2224/45099 ,  H01L2924/00

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip (1000) which is mounted on a main surface of a wiring substrate (6000), and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is placed at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is. Particularly, in a high-frequency power amplifier module provided with a semiconductor chip having multistage amplifying transistors (2000,3000) on a wiring substrate: an angle formed by a first auxiliary line connecting bonding portions to each other at the two ends of an input bonding wire (9000D) connecting a bonding input electrode (2000B) for a specific one of the amplifying transistors to the wiring substrate arid a second auxiliary line connecting bonding portions to each other at the two ends of an output bonding wire (9000A) connecting an bonding output electrode (3000C) for another amplifying transistor at a stage following the specific amplifying transistor to the wiring substrate is in the range 72 degrees to 180 degrees; and a gap between bonding portions of the bonding input electrode and the bonding output electrode is at least 0.3 mm but smaller than 0.8 mm. As a result, the high-frequency characteristic of the power amplifier module can be improved and the size thereof can be reduced.

公开(公告)号：EP0971411A2

公开(公告)日：2000-01-12

申请号：EP99112588.1

申请日：1999-07-01

Applicant: Hitachi, Ltd. ,  Hitachi Tohbu Semiconductor,Ltd.

Inventor： Kohjiro, Iwamichi ,  Kikuchi, Sakae ,  Nunogawa, Yasuhiro ,  Kondo, Shizuo ,  Adachi, Tetsuaki ,  Kagaya, Osamu ,  Sekine, Kenji ,  Hase, Eiichi ,  Yamashita, Kiichi

IPC: H01L23/66 ,  H01L23/50

CPC classification number: H01L24/06 ,  H01L23/04 ,  H01L23/49805 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/552 ,  H01L23/645 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L2223/6611 ,  H01L2223/6627 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/45669 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/48799 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/4912 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15173 ,  H01L2924/15313 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/19032 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F1/56 ,  H03F3/195 ,  H03F3/213 ,  H03F3/604 ,  H03F2200/12 ,  H03F2200/168 ,  H03F2200/222 ,  H03F2200/255 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/408 ,  H03F2200/411 ,  H03F2200/423 ,  H03F2200/451 ,  H03F2200/543 ,  H03H7/383 ,  H05K1/0243 ,  H05K1/0298 ,  H05K1/183 ,  H05K3/403 ,  H01L2924/05432 ,  H01L2924/2065 ,  H01L2224/45099 ,  H01L2924/00

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is placed at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is. Particularly, in a high-frequency power amplifier module provided with a semiconductor chip having multistage amplifying transistors on a wiring substrate: an angle formed by a first auxiliary line connecting bonding portions to each other at the two ends of an input bonding wire connecting a bonding input electrode for a specific one of the amplifying transistors to the wiring substrate and a second auxiliary line connecting bonding portions to each other at the two ends of an output bonding wire connecting an bonding output electrode for another amplifying transistor at a stage following the specific amplifying transistor to the wiring substrate is in the range 72 degrees to 180 degrees; and a gap between bonding portions of the bonding input electrode and the bonding output electrode is at least 0.3 mm but smaller than 0.8 mm. As a result, the high-frequency characteristic of the power amplifier module can be improved and the size thereof can be reduced.

Abstract translation: 在诸如高频功率放大器模块的半导体器件中，多个放大装置形成在安装在布线衬底的主表面上的半导体芯片上，并且半导体芯片的电极通过导线电连接到电极 的布线基板。 为了使高频功率放大器模块小型化，与设定为固定基准电位的导线电连接的基板侧连接电极配置在比基板侧连接电极远离半导体芯片侧的位置， 与输出配线电连接。 与输入配线电连接的基板侧输入电极与半导体芯片侧的距离大致等于从半导体芯片侧到基板侧输出电极的距离，或者距离半导体芯片较远的位置 半导体芯片的侧面比基板侧接合电极更靠近半导体芯片的侧面。 特别是，在配备有在布线基板上具有多级放大晶体管的半导体芯片的高频功率放大器模块中：在连接键合的输入键合线的两端处由连接键合部分的第一辅助线形成的角度 输入电极用于放大晶体管中的特定一个到布线衬底，以及第二辅助线，在输出接合线的两端处将接合部分彼此连接，输出接合线在特定放大之后的级处连接用于另一个放大晶体管的接合输出电极 晶体管到布线衬底的距离在72度到180度的范围内; 并且键合输入电极和键合输出电极的键合部分之间的间隙为至少0.3mm但小于0.8mm。 结果，可以改善功率放大器模块的高频特性并且可以减小其尺寸。

公开(公告)号：EP0118763A3

公开(公告)日：1987-07-22

申请号：EP84101290

申请日：1984-02-08

Applicant: HITACHI, LTD.

Inventor： Takasaki, Yoshitaka ,  Yamashita, Kiichi ,  Takahashi, Yasushi

IPC: H04B17/02 ,  H04L01/24 ,  H04L25/49 ,  H04L01/10

CPC classification number: H04L1/24 ,  H04B17/40

Abstract: A method of searching fault locations which is-employed in a transmission system comprising a transmitting terminal (1) having a transmitter (2) for transmitting a digital signal; a receiving terminal (5) having a receiver (8) for receiving the digital signal; a plurality of repeaters (4, 4, ...) which are placed between the transmitting and receiving terminals, and each of which receives and amplifies the digital signal from a preceding repeater section and deliver it to a subsequent repeater section; and a plurality of transmission lines (3, 3, ...) for connecting the transmitter with the first repeater, the repeaters with each other and the final repeater with each other and the final repeater with the receiver, respectively. This method comprises the steps of coding an orginal signal to be transmitted in terms of two kinds of error detecting codes at the transmitting terminal to send out them from the transmitter; detecting an error of a received signal using one of the two kinds of error detecting codes at each repeater thereby to measure the error rate occurred at one repeater section corresponding to each repeater; recording a decoded received signal using the error detecting code employed to detect the error, and delivering it to a subsequent repeater section; and transmitting signals each of which represents the error rate at each repeater section measured at each repeater, to the transmitting terminal or receiving terminal.

公开(公告)号：EP0971411A3

公开(公告)日：2000-09-06

申请号：EP99112588.1

申请日：1999-07-01

Applicant: Hitachi, Ltd. ,  Hitachi Tohbu Semiconductor,Ltd.

Inventor： Kohjiro, Iwamichi ,  Kikuchi, Sakae ,  Nunogawa, Yasuhiro ,  Kondo, Shizuo ,  Adachi, Tetsuaki ,  Kagaya, Osamu ,  Sekine, Kenji ,  Hase, Eiichi ,  Yamashita, Kiichi

IPC: H01L23/66 ,  H01L23/50

CPC classification number: H01L24/06 ,  H01L23/04 ,  H01L23/49805 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/552 ,  H01L23/645 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L2223/6611 ,  H01L2223/6627 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/45669 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/48799 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/4912 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15173 ,  H01L2924/15313 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/19032 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F1/56 ,  H03F3/195 ,  H03F3/213 ,  H03F3/604 ,  H03F2200/12 ,  H03F2200/168 ,  H03F2200/222 ,  H03F2200/255 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/408 ,  H03F2200/411 ,  H03F2200/423 ,  H03F2200/451 ,  H03F2200/543 ,  H03H7/383 ,  H05K1/0243 ,  H05K1/0298 ,  H05K1/183 ,  H05K3/403 ,  H01L2924/05432 ,  H01L2924/2065 ,  H01L2224/45099 ,  H01L2924/00

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip (1000) which is mounted on a main surface of a wiring substrate (6000), and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is placed at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is. Particularly, in a high-frequency power amplifier module provided with a semiconductor chip having multistage amplifying transistors (2000,3000) on a wiring substrate: an angle formed by a first auxiliary line connecting bonding portions to each other at the two ends of an input bonding wire (9000D) connecting a bonding input electrode (2000B) for a specific one of the amplifying transistors to the wiring substrate and a second auxiliary line connecting bonding portions to each other at the two ends of an output bonding wire (9000A) connecting an bonding output electrode (3000C) for another amplifying transistor at a stage following the specific amplifying transistor to the wiring substrate is in the range 72 degrees to 180 degrees; and a gap between bonding portions of the bonding input electrode and the bonding output electrode is at least 0.3 mm but smaller than 0.8 mm. As a result, the high-frequency characteristic of the power amplifier module can be improved and the size thereof can be reduced.

Abstract translation: 在诸如高频功率放大器模块的半导体器件中，多个放大装置形成在安装在布线衬底（6000）的主表面上的半导体芯片（1000）上，并且半导体芯片的电极是 通过导线电连接到布线基板的电极。 为了使高频功率放大器模块小型化，与设定为固定基准电位的导线电连接的基板侧连接电极配置在比基板侧连接电极远离半导体芯片侧的位置， 与输出配线电连接。 与输入配线电连接的基板侧输入电极与半导体芯片侧的距离大致等于从半导体芯片侧到基板侧输出电极的距离，或者距离半导体芯片较远的位置 半导体芯片的侧面比基板侧接合电极更靠近半导体芯片的侧面。 特别是，在配备有在布线基板上具有多级放大晶体管（2000,3000）的半导体芯片的高频功率放大器模块中：在输入端的两端由连接键合部分的第一辅助线形成的角度 将连接用于放大晶体管的特定一个的连接输入电极（2000B）连接到布线基板的连接导线（9000D）和连接焊接部分的第二辅助线，该连接导线在输出连接导线（9000A）的两端彼此连接， 将特定放大晶体管之后的另一个放大晶体管的输出电极（3000C）接合到布线衬底的温度范围为72度到180度; 并且键合输入电极和键合输出电极的键合部分之间的间隙为至少0.3mm但小于0.8mm。 结果，可以改善功率放大器模块的高频特性并且可以减小其尺寸。

公开(公告)号：EP0118763B1

公开(公告)日：1990-05-09

申请号：EP84101290.9

申请日：1984-02-08

Applicant: HITACHI, LTD.

Inventor： Takasaki, Yoshitaka ,  Yamashita, Kiichi ,  Takahashi, Yasushi

IPC: H04B17/02 ,  H04L1/24

CPC classification number: H04L1/24 ,  H04B17/40

公开(公告)号：EP0118763A2

公开(公告)日：1984-09-19

申请号：EP84101290.9

申请日：1984-02-08

Applicant: HITACHI, LTD.

Inventor： Takasaki, Yoshitaka ,  Yamashita, Kiichi ,  Takahashi, Yasushi

IPC: H04B17/02 ,  H04L1/24

CPC classification number: H04L1/24 ,  H04B17/40

Abstract: A method of searching fault locations which is-employed in a transmission system comprising a transmitting terminal (1) having a transmitter (2) for transmitting a digital signal; a receiving terminal (5) having a receiver (8) for receiving the digital signal; a plurality of repeaters (4, 4, ...) which are placed between the transmitting and receiving terminals, and each of which receives and amplifies the digital signal from a preceding repeater section and deliver it to a subsequent repeater section; and a plurality of transmission lines (3, 3, ...) for connecting the transmitter with the first repeater, the repeaters with each other and the final repeater with each other and the final repeater with the receiver, respectively. This method comprises the steps of coding an orginal signal to be transmitted in terms of two kinds of error detecting codes at the transmitting terminal to send out them from the transmitter; detecting an error of a received signal using one of the two kinds of error detecting codes at each repeater thereby to measure the error rate occurred at one repeater section corresponding to each repeater; recording a decoded received signal using the error detecting code employed to detect the error, and delivering it to a subsequent repeater section; and transmitting signals each of which represents the error rate at each repeater section measured at each repeater, to the transmitting terminal or receiving terminal.