公开(公告)号：EP3086362A4

公开(公告)日：2017-05-31

申请号：EP15866377

申请日：2015-06-05

申请人： NIPPON MICROMETAL CORP ,  NIPPON STEEL & SUMIKIN MAT CO

发明人： ODA DAIZO ,  ETO MOTOKI ,  YAMADA TAKASHI ,  HAIBARA TERUO ,  OISHI RYO ,  UNO TOMOHIRO ,  OYAMADA TETSUYA

IPC分类号： H01L23/49 ,  C22C9/00 ,  C22F1/08 ,  H01L21/60

CPC分类号： H01L24/45 ,  C22C9/00 ,  C22F1/08 ,  H01L24/05 ,  H01L24/43 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/43125 ,  H01L2224/4321 ,  H01L2224/43848 ,  H01L2224/45 ,  H01L2224/45005 ,  H01L2224/45015 ,  H01L2224/45109 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45609 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/48011 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48824 ,  H01L2224/85045 ,  H01L2224/85054 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/8509 ,  H01L2224/85203 ,  H01L2224/85439 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/20111 ,  H01L2924/20752 ,  H01L2924/01204 ,  H01L2924/01049 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/01001 ,  H01L2924/01007 ,  H01L2924/20105 ,  H01L2924/20656 ,  H01L2924/00 ,  H01L2924/2011 ,  H01L2924/01004 ,  H01L2924/01033

摘要： There is provided a Cu bonding wire having a Pd coating layer on a surface thereof, that improves bonding reliability of a ball bonded part in a high-temperature and high-humidity environment and is suitable for on-vehicle devices. The bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, and the bonding wire contains In of 0.011 to 1.2% by mass and has the Pd coating layer of a thickness of 0.015 to 0.150 µm. With this configuration, it is able to increase the bonding longevity of a ball bonded part in a high-temperature and high-humidity environment, and thus to improve the bonding reliability. When the Cu alloy core material contains one or more elements of Pt, Pd, Rh and Ni in an amount, for each element, of 0.05 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 175°C or more. When an Au skin layer is further formed on a surface of the Pd coating layer, wedge bondability improves.

摘要翻译： 提供一种在其表面上具有Pd涂层的Cu接合线，其提高了球接合部在高温高湿环境下的接合可靠性，并且适用于车载装置。 本发明的半导体装置用接合线具备Cu合金芯材和在该Cu合金芯材的表面形成的Pd被覆层，该接合线含有0.011〜1.2质量％的In，并且具有 厚度为0.015至0.150μm。 利用该构造，能够增加球接合部在高温高湿环境下的接合寿命，并由此改善接合可靠性。 Cu合金芯材含有0.05〜1.2质量％的Pt，Pd，Rh和Ni中的一种或两种以上的元素时，能够提高球接合部的可靠性， 175°C或更高的温度环境。 当在Pd涂层的表面上进一步形成Au表层时，楔接合性提高。

公开(公告)号：EP3136435A4

公开(公告)日：2017-07-26

申请号：EP15866376

申请日：2015-07-23

申请人： NIPPON MICROMETAL CORP ,  NIPPON STEEL & SUMIKIN MAT CO

发明人： YAMADA TAKASHI ,  ODA DAIZO ,  OISHI RYO ,  UNO TOMOHIRO

IPC分类号： H01L23/49 ,  C22C9/00

CPC分类号： H01L24/45 ,  B23K35/0227 ,  B23K35/302 ,  B23K2201/40 ,  C22C5/04 ,  C22C9/00 ,  C22C9/04 ,  C22C9/06 ,  H01L23/49582 ,  H01L24/05 ,  H01L24/43 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/05624 ,  H01L2224/43 ,  H01L2224/43125 ,  H01L2224/4321 ,  H01L2224/43825 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45 ,  H01L2224/45005 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45164 ,  H01L2224/45169 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/45847 ,  H01L2224/45944 ,  H01L2224/45964 ,  H01L2224/4801 ,  H01L2224/48011 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/78 ,  H01L2224/78301 ,  H01L2224/85 ,  H01L2224/85045 ,  H01L2224/85075 ,  H01L2224/85181 ,  H01L2224/85203 ,  H01L2224/85207 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/15738 ,  H01L2924/15763 ,  H01L2924/35121 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/01028 ,  H01L2924/01015 ,  H01L2924/01005 ,  H01L2924/01004 ,  H01L2924/01026 ,  H01L2924/01012 ,  H01L2924/01022 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01014 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/00015 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/01007 ,  H01L2924/20654 ,  H01L2924/20655 ,  H01L2924/20656 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01033 ,  H01L2924/01083

摘要： There is provided a bonding wire for a semiconductor device including a coating layer having Pd as a main component on a surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on a surface of the coating layer, the bonding wire further improving 2nd bondability on a Pd-plated lead frame and achieving excellent ball bondability even in a high-humidity heating condition. The bonding wire for a semiconductor device including the coating layer having Pd as a main component on the surface of the Cu alloy core material and the skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at% at an outermost surface thereof and has the core material containing either or both of Pd and Pt in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in the 2nd bondability and excellent ball bondability in the high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at% to 75 at%.

摘要翻译： 提供一种用于半导体器件的接合线，该接合线包括在Cu合金芯材的表面上具有Pd作为主要成分的涂层和在该涂层的表面上包含Au和Pd的表皮合金层，该接合线进一步 即使在高湿度加热条件下，也改善了镀钯引线框架上的第二焊接性并实现优异的球焊性。 包括在Cu合金芯材表面上具有Pd作为主要成分的涂层和在涂层表面上包含Au和Pd的表皮合金层的半导体器件用接合线具有1到10的Cu浓度 并且芯材含有总量为0.1〜3.0质量％的Pd和Pt中的任一者或两者，由此实现第2接合性的提高和高湿加热条件下的优异的球接合性 。 此外，表皮合金层中Au的最大浓度优选为15原子％至75原子％。

公开(公告)号：EP3007216A4

公开(公告)日：2017-03-08

申请号：EP15772826

申请日：2015-03-31

申请人： NIPPON MICROMETAL CORP ,  NIPPON STEEL & SUMIKIN MAT CO

发明人： YAMADA TAKASHI ,  ODA DAIZO ,  OISHI RYO ,  HAIBARA TERUO ,  UNO TOMOHIRO

IPC分类号： C22C5/06 ,  B21C1/00 ,  C22C5/08 ,  C22F1/14 ,  H01L23/00

CPC分类号： H01L24/45 ,  B21C1/00 ,  B21C1/003 ,  C22C5/06 ,  C22C5/08 ,  C22F1/00 ,  C22F1/14 ,  H01L24/43 ,  H01L2224/4321 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45012 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2924/00011 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/201 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/00 ,  H01L2924/01201 ,  H01L2924/01016 ,  H01L2924/01017 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/12044 ,  H01L2924/00015 ,  H01L2224/45664 ,  H01L2924/01049 ,  H01L2924/01045 ,  H01L2924/01004 ,  H01L2924/01005

摘要： Bonding wire for semiconductor device use where both leaning failures and spring failures are suppressed by (1) in a cross-section containing the wire center and parallel to the wire longitudinal direction (wire center cross-section), there are no crystal grains with a ratio a/b of a long axis "a" and a short axis "b" of 10 or more and with an area of 15 µm 2 or more ("fiber texture"), (2) when measuring a crystal direction in the wire longitudinal direction in the wire center cross-section, the ratio of crystal direction with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 10% to less than 50%, and (3) when measuring a crystal direction in the wire longitudinal direction at the wire surface, the ratio of crystal direction with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 70% or more. During the drawing step, a drawing operation with a rate of reduction of area of 15.5% or more is performed at least once. The final heat treatment temperature and the pre-final heat treatment temperature are made predetermined ranges.

摘要翻译： 接合线的半导体装置中使用，其中两个倾斜故障和弹簧故障是由抑制（1）中的横截面容纳线中心，并平行于线长度方向（丝中心横截面）时，不存在晶粒与 长轴的“a”和短轴的10或更多个“b”的比率A / b，并与15微米2以上（“纤维织构”）区域，（2）当测量在导线的晶体方向 在导线中心的横截面长度方向，晶体方向<100>与以下中的角度差相对于比为15°或更小是导线长度方向，由面积比，10％至小于50％，和（ 3）当在金属丝表面测量在所述导线长度方向的晶体方向，晶体方向<100>与以下中的角度差相对于15°或更小的金属丝长度方向的比率是，由面积比，70％或 更多。 在拉伸步骤期间，具有降低的15.5％或更多的面积的比率的图手术被执行至少一次。 最终的热处理温度和所述半成品热处理温度由预定范围。

公开(公告)号：EP2993693A4

公开(公告)日：2017-01-04

申请号：EP15773517

申请日：2015-03-31

申请人： NIPPON MICROMETAL CORP ,  NIPPON STEEL & SUMIKIN MAT CO

发明人： YAMADA TAKASHI ,  ODA DAIZO ,  OISHI RYO ,  HAIBARA TERUO ,  UNO TOMOHIRO

IPC分类号： H01L21/60 ,  B21C1/00 ,  B23K35/02 ,  B23K35/30 ,  C22C5/06 ,  C22C5/08 ,  C22F1/00 ,  C22F1/14 ,  H01L23/00

CPC分类号： H01L24/45 ,  B21C1/00 ,  B21C1/003 ,  B23K35/0227 ,  B23K35/3006 ,  C22C5/06 ,  C22C5/08 ,  C22F1/00 ,  C22F1/14 ,  H01L24/43 ,  H01L2224/4321 ,  H01L2224/43848 ,  H01L2224/45012 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45664 ,  H01L2924/00011 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/013 ,  H01L2924/201 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/01049 ,  H01L2924/01045 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01005

摘要： Bonding wire for semiconductor device use where both leaning failures and spring failures are suppressed by (1) in a cross-section containing the wire center and parallel to the wire longitudinal direction (wire center cross-section), there are no crystal grains with a ratio a/b of a long axis "a" and a short axis "b" of 10 or more and with an area of 15 µm 2 or more ("fiber texture"), (2) when measuring a crystal direction in the wire longitudinal direction in the wire center cross-section, the ratio of crystal direction with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 50% to 90%, and (3) when measuring a crystal direction in the wire longitudinal direction at the wire surface, the ratio of crystal direction with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 50% to 90%. During the drawing steep, a drawing operation with a rate of reduction of area of 15.5% or more is performed at least once. The final heat treatment temperature and the pre-final heat treatment temperature are made predetermined ranges.

公开(公告)号：EP3147938A4

公开(公告)日：2017-06-14

申请号：EP15882901

申请日：2015-12-28

申请人： NIPPON MICROMETAL CORP ,  NIPPON STEEL & SUMIKIN MAT CO

发明人： YAMADA TAKASHI ,  ODA DAIZO ,  OISHI RYO ,  UNO TOMOHIRO

IPC分类号： H01L23/49 ,  C22C9/00

CPC分类号： H01L24/45 ,  C22C5/04 ,  C22C9/00 ,  C22C9/06 ,  H01L24/05 ,  H01L24/43 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/43125 ,  H01L2224/43825 ,  H01L2224/43826 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45572 ,  H01L2224/45664 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48824 ,  H01L2224/85075 ,  H01L2224/85203 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2224/45644 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01015 ,  H01L2924/01005 ,  H01L2924/01004 ,  H01L2924/01026 ,  H01L2924/01012 ,  H01L2924/01022 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01014 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01203 ,  H01L2924/01202 ,  H01L2924/01204 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/01007 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/01033 ,  H01L2924/00

摘要： There is provided a bonding wire for a semiconductor device including a coating layer having Pd as a main component on a surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on a surface of the coating layer, the bonding wire further improving 2nd bondability on a Pd-plated lead frame and achieving excellent ball bondability even in a high-humidity heating condition. The bonding wire for a semiconductor device including the coating layer having Pd as a main component on the surface of the Cu alloy core material and the skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at% at an outermost surface thereof and has the core material containing a metallic element of Group 10 of the Periodic Table of Elements in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in the 2nd bondability and excellent ball bondability in the high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at% to 75 at%.

摘要翻译： 提供一种用于半导体器件的接合线，该接合线包括在Cu合金芯材的表面上具有Pd作为主要成分的涂层和在该涂层的表面上包含Au和Pd的表皮合金层，该接合线进一步 即使在高湿度加热条件下，也改善了镀钯引线框架上的第二焊接性并实现优异的球焊性。 包括在Cu合金芯材表面上具有Pd作为主要成分的涂层和在涂层表面上包含Au和Pd的表皮合金层的半导体器件用接合线具有1到10的Cu浓度 并且具有含有总量为0.1〜3.0质量％的元素周期表第10族的金属元素的芯材，由此实现第2接合性的提高和在第2接合性方面的优异的球接合性 高湿度的加热条件。 此外，表皮合金层中Au的最大浓度优选为15原子％至75原子％。

公开(公告)号：EP3131113A4

公开(公告)日：2017-03-22

申请号：EP15866375

申请日：2015-07-22

申请人： NIPPON MICROMETAL CORP ,  NIPPON STEEL & SUMIKIN MAT CO

发明人： YAMADA TAKASHI ,  ODA DAIZO ,  HAIBARA TERUO ,  OISHI RYO ,  SAITO KAZUYUKI ,  UNO TOMOHIRO

IPC分类号： H01L23/49 ,  C22C9/00

CPC分类号： H01L24/45 ,  B23K35/0227 ,  B23K35/3013 ,  B23K35/302 ,  B23K2201/40 ,  C22C5/04 ,  C22C9/00 ,  C22C9/04 ,  C22C9/06 ,  H01L24/05 ,  H01L24/43 ,  H01L24/48 ,  H01L2224/05624 ,  H01L2224/43 ,  H01L2224/4312 ,  H01L2224/43125 ,  H01L2224/4321 ,  H01L2224/4382 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45 ,  H01L2224/45005 ,  H01L2224/45015 ,  H01L2224/45105 ,  H01L2224/45109 ,  H01L2224/45111 ,  H01L2224/45113 ,  H01L2224/45118 ,  H01L2224/4512 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45169 ,  H01L2224/45173 ,  H01L2224/45178 ,  H01L2224/45541 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/48227 ,  H01L2224/4845 ,  H01L2224/48463 ,  H01L2224/48824 ,  H01L2224/78 ,  H01L2224/78251 ,  H01L2224/85 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85203 ,  H01L2224/85444 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01034 ,  H01L2924/01052 ,  H01L2924/01057 ,  H01L2924/0665 ,  H01L2924/0705 ,  H01L2924/10253 ,  H01L2924/186 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2924/01045 ,  H01L2924/01049 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01031 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01083 ,  H01L2924/01079 ,  H01L2924/01046 ,  H01L2924/01029 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/00015 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/20752 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/20105 ,  H01L2924/01001 ,  H01L2924/01007 ,  H01L2924/00012 ,  H01L2924/00

摘要： There is provided a bonding wire for a semiconductor device, the bonding wire including a Cu alloy core material and a Pd coating layer formed on a surface thereof, achieving simultaneously improvement in bonding reliability of a ball bonded part in HTS at 175°C to 200°C and an strength ratio (= ultimate strength/0.2% offset yield strength) of 1.1 to 1.6. Containing one or more of Ni, Zn, Rh, in, Ir, and Pt in the wire in a total amount of 0.03 to 2% by mass improves the bonding reliability of the ball bonded part in HTS, and furthermore, making an orientation proportion of a crystal orientation angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 50% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.3 µm provides a strength ratio of 1.6 or less.

摘要翻译： 提供一种用于半导体器件的接合线，接合线包括Cu合金芯材和在其表面上形成的Pd涂层，同时在HTS中在175℃至200℃的接合可靠性提高 °C和1.1至1.6的强度比（=极限强度/ 0.2％偏移屈服强度）。 通过含有总量为0.03〜2质量％的Ni，Zn，Rh，In，Ir及Pt中的一种以上，可以提高HTS中球接合部的接合可靠性，并且可以使取向比例 在芯线材料的垂直于线材的方向上的截面上测量晶体取向时，在线材长度方向上的晶体取向中，相对于线材长度方向成15°以下的角度的晶体取向<100>为50％以上 并且使芯材截面中在与接合线的线轴垂直的方向上的平均晶粒尺寸为0.9至1.3μm，提供1.6或更小的强度比。

公开(公告)号：EP3188222A4

公开(公告)日：2018-04-18

申请号：EP15836675

申请日：2015-08-28

申请人： NIPPON MICROMETAL CORP ,  NIPPON STEEL & SUMIKIN MAT CO

发明人： YAMADA TAKASHI ,  ODA DAIZO ,  HAIBARA TERUO ,  TERASHIMA SHINICHI

IPC分类号： H01L21/60 ,  H01L23/00 ,  H01L23/12 ,  H01L23/50

CPC分类号： H01L24/13 ,  B23K1/0016 ,  B23K1/008 ,  B23K1/19 ,  B23K2201/38 ,  B23K2201/42 ,  B23K2203/12 ,  C22C9/00 ,  H01L23/12 ,  H01L23/50 ,  H01L24/11 ,  H01L2224/1111 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/13005 ,  H01L2224/13014 ,  H01L2224/13147 ,  H01L2224/13564 ,  H01L2224/1357 ,  H01L2224/13611 ,  H01L2224/13639 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01017 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/20642 ,  H01L2924/20643 ,  H01L2924/20644 ,  H01L2924/20645 ,  H01L2924/20646 ,  H01L2924/20647

摘要： The present invention has as its theme the provision of Cu pillars on a semiconductor chip and electrical connection of the same during which able to enlarge a height/diameter ratio of the Cu pillars, improve the productivity, and raise the height of the Cu pillars and thereby improve the reliability of the Cu pillars compared with the method of forming Cu pillars by plating. The present invention solves this problem by forming the material for the Cu pillars as cylindrical preforms in advance and connecting these cylindrical preforms to electrodes on the semiconductor chip to form Cu pillars. Due to this, it becomes possible to make the height/diameter ratio of the Cu pillars 2.0 or more. Since electroplating is not used, the time required for production of the Cu pillars is short and the productivity can be improved. Further, the height of the Cu pillars can be raised to 200 µm or more, so these are also preferable for moldunderfill. The components can be freely adjusted, so it is possible to easily design the alloy components to obtain highly reliable Cu pillars.

公开(公告)号：EP3121841A4

公开(公告)日：2018-02-28

申请号：EP15874396

申请日：2015-09-18

申请人： NIPPON MICROMETAL CORP ,  NIPPON STEEL & SUMIKIN MAT CO

发明人： YAMADA TAKASHI ,  ODA DAIZO ,  HAIBARA TERUO ,  UNO TOMOHIRO

IPC分类号： H01L23/49

CPC分类号： H01L24/45 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45609 ,  H01L2224/45618 ,  H01L2224/45644 ,  H01L2224/45647 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45673 ,  H01L2224/45678 ,  H01L2224/48011 ,  H01L2224/48247 ,  H01L2224/48507 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85439 ,  H01L2924/10253 ,  H01L2924/1576 ,  H01L2924/20752 ,  H01L2924/013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01007 ,  H01L2924/01001 ,  H01L2924/01028 ,  H01L2924/00013 ,  H01L2924/20656 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01034 ,  H01L2924/01045 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01057 ,  H01L2924/01077 ,  H01L2924/01083 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/01204

摘要： There is provided a Cu bonding wire having a Pd coating layer on a surface thereof, that improves bonding reliability of a ball bonded part in a high-temperature and high-humidity environment and is suitable for on-vehicle devices. The bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. With this configuration, it is able to increase the bonding longevity of a ball bonded part in a high-temperature and high-humidity environment, and thus to improve the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170°C or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

公开(公告)号：EP3157046A4

公开(公告)日：2017-05-24

申请号：EP15889429

申请日：2015-09-17

申请人： NIPPON MICROMETAL CORP ,  NIPPON STEEL & SUMIKIN MAT CO

发明人： ODA DAIZO ,  ETO MOTOKI ,  SAITO KAZUYUKI ,  HAIBARA TERUO ,  OISHI RYO ,  YAMADA TAKASHI ,  UNO TOMOHIRO

IPC分类号： H01L23/49 ,  C22C9/00

CPC分类号： H01L24/45 ,  C22C5/04 ,  C22C9/00 ,  H01L24/43 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/43125 ,  H01L2224/43825 ,  H01L2224/43826 ,  H01L2224/43827 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45015 ,  H01L2224/45105 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48824 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85439 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01005 ,  H01L2924/01015 ,  H01L2924/01012 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2224/4321 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/20752 ,  H01L2924/013 ,  H01L2924/01014 ,  H01L2924/01007 ,  H01L2924/01001 ,  H01L2924/00013 ,  H01L2224/45639 ,  H01L2224/45669 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/45671 ,  H01L2924/01004 ,  H01L2924/01046 ,  H01L2924/01033

摘要： There is provided a Cu bonding wire having a Pd coating layer on a surface thereof, that improves bonding reliability of a ball bonded part in a high-temperature, high-humidity environment and is suitable for on-vehicle devices. The bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, and the bonding wire contains Ga and Ge of 0.011 to 1.2% by mass in total. With this configuration, it is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 µm. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175°C or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

摘要翻译： 本发明提供一种在表面具有Pd被覆层的Cu接合线，提高球接合部在高温高湿环境下的接合可靠性，适用于车载装置。 本发明的半导体装置用接合线具备Cu合金芯材和形成在该Cu合金芯材的表面上的Pd被覆层，该接合线总计含有0.011〜1.2质量％的Ga和Ge。 由此，能够提高球接合部在高温高湿环境下的接合寿命，提高接合可靠性。 Pd涂层的厚度优选为0.015〜0.150μm。 当接合线还含有一种或多种Ni，Ir和Pt元素，其量为每种元素为0.011至1.2质量％时，可以提高球接合部分在高温下的可靠性 环境温度在175°C或更高。 当在Pd涂层的表面上进一步形成含有Au和Pd的合金表层时，楔形键合性提高。

公开(公告)号：EP2461358A4

公开(公告)日：2015-10-14

申请号：EP10804273

申请日：2010-07-16

申请人： NIPPON STEEL & SUMIKIN MAT CO ,  NIPPON MICROMETAL CORP

发明人： TERASHIMA SHINICHI ,  UNO TOMOHIRO ,  YAMADA TAKASHI ,  ODA DAIZO

IPC分类号： H01L21/60 ,  C22C5/02 ,  C22C5/04 ,  C22C5/06

CPC分类号： C22C5/04 ,  C22C5/02 ,  C22C5/06 ,  C22C9/00 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/4516 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/48011 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2224/4851 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48764 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85181 ,  H01L2224/85186 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2224/85564 ,  H01L2924/00011 ,  H01L2924/00015 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/01034 ,  H01L2924/01005 ,  H01L2924/01015 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0102 ,  H01L2924/01013 ,  H01L2924/00014 ,  H01L2224/45144 ,  H01L2924/01204 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/01001 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/01028 ,  H01L2924/0105 ,  H01L2924/01007 ,  H01L2224/45669 ,  H01L2924/2076 ,  H01L2924/01018 ,  H01L2224/48465 ,  H01L2924/20654 ,  H01L2924/20652 ,  H01L2924/20655 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/01004 ,  H01L2924/01033