公开(公告)号：EP4052881B1

公开(公告)日：2024-08-21

申请号：EP21832648.6

申请日：2021-04-23

IPC分类号： H01L23/053 ,  H01L21/56 ,  H01L25/18 ,  H01L25/07 ,  H01L23/28 ,  B29C45/27 ,  B29C45/00 ,  H01L23/00

CPC分类号： H01L25/18 ,  H01L2224/060320130101 ,  H01L2224/4813920130101 ,  H01L23/053 ,  H01L25/072 ,  B29C45/0025 ,  B29C2045/002720130101 ,  B29C45/0046 ,  B29C45/27 ,  H01L2224/4822720130101 ,  H01L2224/4514420130101 ,  H01L2224/4514720130101 ,  H01L2224/4512420130101 ,  H01L2224/4501420130101 ,  H01L2224/3712420130101 ,  H01L2224/3714720130101 ,  H01L2224/371620130101 ,  H01L24/45 ,  H01L24/37 ,  H01L24/06 ,  H01L2924/1309120130101 ,  H01L2924/1305520130101 ,  H01L2924/120320130101 ,  H01L2924/1027220130101 ,  H01L2924/1025320130101 ,  H01L2924/103320130101 ,  H01L24/40 ,  H01L2224/4022520130101 ,  H01L24/48

公开(公告)号：EP3471137B1

公开(公告)日：2024-07-31

申请号：EP17813225.4

申请日：2017-06-09

IPC分类号： H01L23/31 ,  H01L23/373 ,  H01L23/42 ,  H01L23/433

CPC分类号： H01L2924/18120130101 ,  H01L2224/4020130101 ,  H01L2224/4809120130101 ,  H01L23/3107 ,  H01L23/3135 ,  H01L23/4334 ,  H01L23/3736 ,  H01L23/3737 ,  H01L23/42 ,  H01L23/29 ,  H01L2924/1309120130101 ,  H01L2924/1305520130101 ,  H01L2224/8480120130101 ,  H01L2224/848420130101 ,  H01L24/84 ,  H01L2224/7322120130101

公开(公告)号：EP4216259B1

公开(公告)日：2024-05-15

申请号：EP22152939.9

申请日：2022-01-24

IPC分类号： H01L21/60 ,  H01L23/495 ,  H01L25/11

CPC分类号： H01L2224/0410520130101 ,  H01L2224/7326720130101 ,  H01L2224/9224420130101 ,  H01L2224/21420130101 ,  H01L2924/1309120130101 ,  H01L2224/3224520130101 ,  H01L2924/1305520130101 ,  H01L24/20 ,  H01L25/115 ,  H01L2224/1210520130101 ,  H01L2224/838420130101 ,  H01L24/19 ,  H01L2224/0605120130101 ,  H01L2224/0555120130101 ,  H01L2224/0555420130101 ,  H01L2224/0555320130101 ,  H01L2224/29120130101 ,  H01L24/06 ,  H01L23/49562 ,  H01L2224/060320130101 ,  H01L2224/0618120130101 ,  H01L2924/3010720130101 ,  H01L23/36

公开(公告)号：EP4404464A2

公开(公告)日：2024-07-24

申请号：EP24180651.2

申请日：2014-11-18

申请人： Rohm Co., Ltd.

发明人： HAYASHIGUCHI, Masashi ,  INO, Kazuhide

IPC分类号： H03K17/12

CPC分类号： H03K17/0822 ,  H03K17/122 ,  H01L24/49 ,  H01L2224/060320130101 ,  H01L2224/4809120130101 ,  H01L2224/4824720130101 ,  H01L2224/490320130101 ,  H01L2224/4911120130101 ,  H01L2224/4917520130101 ,  H01L2924/1910720130101 ,  H01L2924/1305520130101 ,  H01L2924/1027220130101 ,  H01L2224/4009520130101 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/29120130101 ,  H01L2224/3222520130101 ,  H01L2224/3224520130101 ,  H01L2224/3318120130101 ,  H01L2224/4822720130101 ,  H01L2224/7322120130101 ,  H01L2224/7326320130101 ,  H01L2224/7326520130101 ,  H01L2224/4022520130101 ,  H01L24/40 ,  H01L2924/1309120130101 ,  H01L24/73 ,  H01L2924/0001420130101 ,  H01L2924/18120130101 ,  H01L2224/37120130101 ,  H01L2224/8480120130101 ,  H01L24/37 ,  H02H3/202 ,  H02H9/046 ,  H02M7/5387 ,  H01L2224/8380120130101 ,  H03K2217/002720130101 ,  H01L24/33 ,  H01L24/48 ,  Y02B70/10 ,  H01L24/84 ,  H02M1/0009

摘要： A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.

公开(公告)号：EP4401126A2

公开(公告)日：2024-07-17

申请号：EP24171908.7

申请日：2018-01-30

申请人： Infineon Technologies AG

发明人： ROTH, Alexander ,  HOHLFELD, Olaf

IPC分类号： H01L23/24

CPC分类号： H01L23/053 ,  H01L21/54 ,  H01L23/562 ,  H01L2224/29120130101 ,  H01L2224/2913920130101 ,  H01L2224/3222520130101 ,  H01L2224/838420130101 ,  H01L2224/8385120130101 ,  H01L2924/1305520130101 ,  H01L2924/1306220130101 ,  H01L2924/1306420130101 ,  H01L2924/1309120130101 ,  H01L2924/1615120130101 ,  H01L2924/1625120130101 ,  H01L2924/181520130101 ,  H01L23/24

摘要： A power semiconductor module arrangement comprises a housing, a substrate arranged in the housing, the substrate comprising a dielectric insulation layer, a first metallization layer arranged on a first side of the dielectric insulation layer, and a second metallization layer arranged on a second side of the dielectric insulation layer, at least one semiconductor body mounted on a first surface of the first metallization layer, at least one connecting element arranged on and electrically connected to the first surface of the first metallization layer, at least one contact element, wherein each of the at least one contact element is inserted into and electrically connected to one of the at least one connecting element, wherein each of the at least one contact element extends from the respective connecting element through the interior of the housing and to the outside of the housing in a direction perpendicular to the first surface, and a hard encapsulation that is arranged adjacent to the first metallization layer and that at least partly fills the inside of the housing, wherein the hard encapsulation has a hardness of at least 40 Shore A, each of the at least one contact element is partly embedded in the hard encapsulation, the hard encapsulation completely covers the at least one semiconductor body and any other components mounted on the substrate, each of the at least one contact element has a first length between the substrate and a cover of the housing in a direction perpendicular to the first surface of the first metallization layer, the hard encapsulation has a first thickness in a direction perpendicular to the first surface of the first metallization layer in areas surrounding each of the at least one contact element, the hard encapsulation has a second thickness in a direction perpendicular to the first surface of the first metallization layer in other areas, and the first thickness is greater than the second thickness.

公开(公告)号：EP4322215A3

公开(公告)日：2024-07-03

申请号：EP23199195.1

申请日：2011-01-31

申请人： Micron Technology, Inc.

发明人： KIRBY, Kyle, K. ,  PAREKH, Kunal, R. ,  NIROUMAND, Sarah, A.

IPC分类号： H01L21/768 ,  H01L23/48 ,  H01L23/522 ,  H01L25/065

CPC分类号： H01L23/481 ,  H01L24/06 ,  H01L24/13 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0500920130101 ,  H01L2224/055720130101 ,  H01L2224/0564720130101 ,  H01L2224/0618120130101 ,  H01L2224/1302520130101 ,  H01L2224/1614620130101 ,  H01L2225/0651320130101 ,  H01L2225/0654420130101 ,  H01L2225/0654820130101 ,  H01L2924/0101320130101 ,  H01L2924/0102920130101 ,  H01L2924/0107320130101 ,  H01L2924/0107920130101 ,  H01L2924/0108220130101 ,  H01L2924/01420130101 ,  H01L2924/0494120130101 ,  H01L2924/0100620130101 ,  H01L2924/0103320130101 ,  H01L2924/010520130101 ,  H01L2924/0107420130101 ,  H01L2924/1309120130101 ,  H01L2924/130620130101 ,  H01L2924/0001420130101 ,  H01L2924/000220130101 ,  H01L2224/040120130101 ,  H01L2924/1204220130101 ,  H01L2924/1420130101 ,  H01L21/76898 ,  H01L23/522

摘要： Microelectronic devices with through-substrate interconnects and associated methods of manufacturing are disclosed herein. In one embodiment, a semiconductor device includes a semiconductor substrate carrying first and second metallization layers. The second metallization layer is spaced apart from the semiconductor substrate with the first metallization layer therebetween. The semiconductor device also includes a conductive interconnect extending at least partially through the semiconductor substrate. The first metallization layer is in electrical contact with the conductive interconnect via the second metallization layer.

公开(公告)号：EP3550596B1

公开(公告)日：2024-09-04

申请号：EP18165648.9

申请日：2018-04-04

IPC分类号： H01L21/60 ,  B23K20/00 ,  H01L23/00

CPC分类号： H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/0404220130101 ,  H01L2224/0564720130101 ,  H01L2224/4501420130101 ,  H01L2224/4501520130101 ,  H01L2224/4512420130101 ,  H01L2224/4514720130101 ,  H01L2224/4813720130101 ,  H01L2224/4815720130101 ,  H01L2224/4845820130101 ,  H01L2224/4847220130101 ,  H01L2224/4884720130101 ,  H01L2224/7810120130101 ,  H01L2224/7810220130101 ,  H01L2224/782520130101 ,  H01L2224/7830120130101 ,  H01L2224/785520130101 ,  H01L2224/8504520130101 ,  H01L2224/8506520130101 ,  H01L2224/8507520130101 ,  H01L2224/850920130101 ,  H01L2224/8520520130101 ,  H01L2224/8520720130101 ,  H01L2924/1305520130101 ,  H01L2924/1306220130101 ,  H01L2924/1306420130101 ,  H01L2924/1309120130101 ,  H01L2924/0001420130101

公开(公告)号：EP3531447B1

公开(公告)日：2024-08-21

申请号：EP19158864.9

申请日：2019-02-22

IPC分类号： H01L21/78 ,  H01L23/00 ,  H01L27/088 ,  H01L21/683 ,  H01L23/31 ,  H01L21/56

CPC分类号： H01L21/561 ,  H01L21/78 ,  H01L24/96 ,  H01L27/088 ,  H01L21/6835 ,  H01L2221/6832720130101 ,  H01L2221/683420130101 ,  H01L23/3107 ,  H01L24/24 ,  H01L2224/2410520130101 ,  H01L2224/2413720130101 ,  H01L2224/24520130101 ,  H01L2224/251820130101 ,  H01L2224/7322720130101 ,  H01L2224/0404220130101 ,  H01L2224/060320130101 ,  H01L2224/0555320130101 ,  H01L2224/4917520130101 ,  H01L2224/4824720130101 ,  H01L24/73 ,  H01L24/48 ,  H01L24/25 ,  H01L24/82 ,  H01L2924/1309120130101 ,  H01L2924/1305520130101 ,  H01L2224/0618120130101

公开(公告)号：EP4372804A2

公开(公告)日：2024-05-22

申请号：EP24168274.9

申请日：2013-09-13

申请人： Rohm Co., Ltd.

发明人： HANADA, Toshio

IPC分类号： H01L23/373

CPC分类号： H01L23/3735 ,  H01L23/49811 ,  H01L23/49844 ,  H01L2224/4822720130101 ,  H01L2224/4911320130101 ,  H01L2924/1027220130101 ,  H01L2924/1203220130101 ,  H01L2924/1309120130101 ,  H01L2924/1910720130101 ,  H01L2924/3010720130101 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/072 ,  H01L2224/0404220130101 ,  H01L2224/3222520130101 ,  H01L2224/3224520130101 ,  H01L2224/3318120130101 ,  H01L2224/7321520130101 ,  H01L2224/7326520130101 ,  H01L2224/9224720130101 ,  H02M7/003 ,  H01L2924/1305520130101 ,  H01L2924/130520130101 ,  H01L2924/18120130101 ,  H01L2924/0001420130101 ,  H01L25/115 ,  H01L2924/1910520130101 ,  H01L2224/060320130101 ,  H01L2224/490320130101 ,  Y02B70/10

摘要： A power module semiconductor device (1) includes: an insulating substrate (10) having a first side, a second side adjacent to the first side, a third side opposite to the first side, and a fourth side opposite to the second side; a first pattern (D(K4)) disposed on a front surface of the insulating substrate (10); first semiconductor chips (Q4) disposed on the first pattern (D(K4)); a negative side power input terminal (N) electrically connected to the first semiconductor chips (Q4), the negative side power input terminal being disposed on the first side of the insulating substrate (10); a first signal terminal (S4,G4,T4) electrically connected to the first semiconductor chips (Q4); a second pattern (D(K1)) disposed on the front surface of the insulating substrate (10); second semiconductor chips (Q1) disposed on the second pattern (D(K1)); a positive side power input terminal (P) electrically connected to the second semiconductor chips (Q1), the positive side power input terminal being disposed on the first side of the insulating substrate (10); a second signal terminal (S1,G1,T1) electrically connected to the second semiconductor chips (Q1); an output terminal (O) electrically connected to the first semiconductor chips (Q4) and the second semiconductor chips (Q1), the output terminal being arranged on the third side of the insulating substrate (10); and a resin layer (12) having a main surface and a side surface and covering the first semiconductor chips (Q4), the second semiconductor chips (Q1), a part of the negative side power input terminal (N), a part of the positive side power input terminal (P), a part of the output terminal (O) and the insulating substrate (10). The negative side power input terminal (N) and the positive side power input terminal (P) are disposed so as to be extended along in a parallel direction with the main surface of the resin layer (12), and the output terminal (P) is disposed so as to be extended along in the parallel direction.

公开(公告)号：EP3780100B1

公开(公告)日：2024-05-22

申请号：EP20188729.6

申请日：2020-07-30

IPC分类号： H01L25/07 ,  H01L23/538 ,  H01L23/373 ,  H01L23/488 ,  H01L21/98 ,  H01L21/60 ,  H01L23/16 ,  H01L23/433 ,  H01L25/18 ,  H01L23/495 ,  H01L23/31

CPC分类号： H01L23/5385 ,  H01L23/3735 ,  H01L25/071 ,  H01L2924/1309120130101 ,  H01L2224/3222720130101 ,  H01L2224/4022720130101 ,  H01L2224/8481520130101 ,  H01L2224/7326320130101 ,  H01L2224/9224620130101 ,  H01L24/32 ,  H01L24/40 ,  H01L24/84 ,  H01L2224/8436520130101 ,  H01L2224/4099120130101 ,  H01L2224/4049920130101 ,  H01L24/33 ,  H01L2224/2614520130101 ,  H01L2224/2929420130101 ,  H01L2224/29320130101 ,  H01L2224/8381520130101 ,  H01L2224/8338520130101 ,  H01L2224/8438520130101 ,  H01L2224/8336520130101 ,  H01L24/83 ,  H01L24/48 ,  H01L2924/0001420130101 ,  H01L2224/4822720130101 ,  H01L2224/7326520130101 ,  H01L2224/7321520130101 ,  H01L2224/7322120130101 ,  H01L24/29 ,  H01L2224/3318120130101 ,  H01L24/73 ,  H01L24/92 ,  H01L23/49537 ,  H01L23/49562 ,  H01L23/3107 ,  H01L23/16 ,  H01L23/49575 ,  H01L23/4334 ,  H01L25/18 ,  H01L2224/060320130101 ,  H01L2924/18120130101