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公开(公告)号：KR101099233B1
公开(公告)日：2011-12-27
申请号：KR1020097027090
申请日：2009-07-10
IPC分类号： H01L21/60
CPC分类号： H01L24/85 , H01L24/05 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05556 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05664 , H01L2224/4312 , H01L2224/4321 , H01L2224/4382 , H01L2224/43825 , H01L2224/43826 , H01L2224/43827 , H01L2224/43848 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45655 , H01L2224/45657 , H01L2224/45664 , H01L2224/45666 , H01L2224/45669 , H01L2224/45671 , H01L2224/45673 , H01L2224/45676 , H01L2224/48011 , H01L2224/48091 , H01L2224/4847 , H01L2224/48471 , H01L2224/48475 , H01L2224/48486 , H01L2224/48499 , H01L2224/48507 , H01L2224/48511 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48664 , H01L2224/48699 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48764 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48864 , H01L2224/78301 , H01L2224/85045 , H01L2224/85051 , H01L2224/85065 , H01L2224/85075 , H01L2224/85186 , H01L2224/85203 , H01L2224/85205 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85986 , H01L2225/06562 , H01L2924/00011 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01057 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01105 , H01L2924/01204 , H01L2924/01205 , H01L2924/01206 , H01L2924/01327 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/3025 , H01L2924/351 , Y10T428/12222 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/00015 , H01L2924/01001 , H01L2924/01203 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/20652 , H01L2924/20655 , H01L2924/20645 , H01L2924/00 , H01L2224/48824 , H01L2924/013 , H01L2924/01049
摘要： 반도체소자의전극상에형성한볼 범프상에본딩와이어를접속하는접합구조이며, 상기본딩와이어및 상기볼 범프는구리를주성분으로하고, 상기접합부의계면에구리이외의금속 R의농도가상기볼 범프에서의금속 R의평균농도의 10배이상인농화층 A를가지고, 또한볼 범프와전극의접합계면에금속 R의농도가볼 범프에서의금속 R의평균농도의 10배이상인농화층 B를갖는본딩와이어의접합구조이다.
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公开(公告)号：KR1020100116174A
公开(公告)日：2010-10-29
申请号：KR1020107016610
申请日：2010-02-12
IPC分类号： H01L21/60
CPC分类号： C22C5/02 , B32B15/018 , C22C5/04 , C22C5/06 , C22C9/00 , C22C21/02 , C22C21/12 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/43 , H01L2224/43848 , H01L2224/43986 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/45169 , H01L2224/45565 , H01L2224/45572 , H01L2224/45644 , H01L2224/45664 , H01L2224/45686 , H01L2224/4569 , H01L2224/48011 , H01L2224/48247 , H01L2224/48471 , H01L2224/48479 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48664 , H01L2224/48839 , H01L2224/48844 , H01L2224/48864 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85186 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2924/00011 , H01L2924/00015 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/3025 , Y10T428/12222 , H01L2924/01001 , H01L2924/00014 , H01L2924/20754 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/01202 , H01L2924/01007 , H01L2924/01205 , H01L2224/45639 , H01L2224/45669 , H01L2224/45655 , H01L2224/45657 , H01L2224/45671 , H01L2224/45666 , H01L2924/20656 , H01L2924/20652 , H01L2924/20645 , H01L2924/20654 , H01L2924/20655 , H01L2924/00 , H01L2224/48227 , H01L2224/48824 , H01L2924/013 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/00013 , H01L2924/01049 , H01L2924/01006
摘要： 본 발명은 볼 접합성과 와이어 가공성을 양립하는 것이 가능하고, 루프 안정성, 당김 강도, 웨지 접합성을 향상시킨 복층 와이어를 제공하는 것을 목적으로 한다. Cu, Au, Ag 중 1종 이상의 원소를 주성분으로 하는 심재와, 상기 심재 상에 Pd를 주성분으로 하는 외층을 구비하고, 와이어 전체에 함유된 총계의 수소 농도가 0.0001 ~ 0.008 질량%의 범위인 것을 특징으로 하는 반도체용 본딩 와이어이다.
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公开(公告)号：KR101055957B1
公开(公告)日：2011-08-09
申请号：KR1020097026397
申请日：2008-12-03
CPC分类号： C22C5/02 , B23K35/0222 , B23K35/302 , C22C5/04 , C22C5/06 , C22C9/00 , C22C9/01 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43825 , H01L2224/43848 , H01L2224/43986 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/45676 , H01L2224/45683 , H01L2224/48011 , H01L2224/48247 , H01L2224/48465 , H01L2224/48471 , H01L2224/48486 , H01L2224/4851 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48839 , H01L2224/48844 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85186 , H01L2224/85203 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2924/00011 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01203 , H01L2924/01204 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/3025 , H01L2924/01004 , H01L2924/01001 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/00015 , H01L2924/01202 , H01L2224/45655 , H01L2224/45657 , H01L2224/45671 , H01L2224/45666 , H01L2924/20652 , H01L2924/20653 , H01L2924/20654 , H01L2924/20655 , H01L2924/20656 , H01L2924/20658 , H01L2224/48227 , H01L2924/00 , H01L2224/48824 , H01L2924/013 , H01L2924/00014 , H01L2924/0104 , H01L2924/00013 , H01L2924/01049 , H01L2924/01006
摘要： 본 발명은 넥부의 손상을 저감할 수 있고, 또한, 루프의 직선성, 루프 높이의 안정성, 본딩 와이어의 접합 형상의 안정화가 우수한, 저루프화, 세선화, 협피치화, 3차원 실장 등의 반도체 실장 기술에도 적응하는 고기능의 본딩 와이어를 제공하는 것을 목적으로 한다. 도전성 금속으로 이루어지는 심재와, 이 심재 위에 심재와는 다른 면심입방정의 금속을 주성분으로 하는 표피층을 가진 본딩 와이어로서, 상기 표피층의 표면에 있어서의 길이 방향의 결정 방위 중 이 차지하는 비율이 50% 이상인 것을 특징으로 하는 반도체 장치용 본딩 와이어.
본딩 와이어, 저루프화, 세선화, 협피치화摘要翻译： 本发明可以减少颈部损伤部，另外，如线性，接合线环优良，低循环，的环路高度的稳定性的键合形状的稳定性变薄，窄间距，一个三维安装 本发明的目的是提供一种适用于半导体安装技术的高性能接合线。 按比例;由导电金属制成的和芯材料，并且与皮肤层主要另一面心立方晶的金属制成，并且在芯材料构成的芯材的接合线，的皮肤层的表面上测定纵向和LT取向期间; 100＆GT 其中键合线至少为50％。
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公开(公告)号：KR1020100033489A
公开(公告)日：2010-03-30
申请号：KR1020097027090
申请日：2009-07-10
IPC分类号： H01L21/60
CPC分类号： H01L24/85 , H01L24/05 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05556 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05664 , H01L2224/4312 , H01L2224/4321 , H01L2224/4382 , H01L2224/43825 , H01L2224/43826 , H01L2224/43827 , H01L2224/43848 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45655 , H01L2224/45657 , H01L2224/45664 , H01L2224/45666 , H01L2224/45669 , H01L2224/45671 , H01L2224/45673 , H01L2224/45676 , H01L2224/48011 , H01L2224/48091 , H01L2224/4847 , H01L2224/48471 , H01L2224/48475 , H01L2224/48486 , H01L2224/48499 , H01L2224/48507 , H01L2224/48511 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48664 , H01L2224/48699 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48764 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48864 , H01L2224/78301 , H01L2224/85045 , H01L2224/85051 , H01L2224/85065 , H01L2224/85075 , H01L2224/85186 , H01L2224/85203 , H01L2224/85205 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85986 , H01L2225/06562 , H01L2924/00011 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01057 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01105 , H01L2924/01204 , H01L2924/01205 , H01L2924/01206 , H01L2924/01327 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/3025 , H01L2924/351 , Y10T428/12222 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/00015 , H01L2924/01001 , H01L2924/01203 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/20652 , H01L2924/20655 , H01L2924/20645 , H01L2924/00 , H01L2224/48824 , H01L2924/013 , H01L2924/01049
摘要： Disclosed is a bonding structure of a copper-based bonding wire that can realize a low material cost and, in reverse bonding for wedge bonding on bumps, can realize high productivity of continuous bonding and high reliability, for example, in heating at an elevated temperature, a thermal cycle test, a reflow test, or an HAST test. The bonding structure comprises a bonding wire connected onto a ball bump formed on an electrode in a semiconductor element. The bonding wire and the ball bump are composed mainly of copper. An increased concentration layer (A) having a concentration of a metal (R), other than copper, that is not less than 10 times the average concentration of the metal (R) in the ball bump is provided at the interface of a bonding part. An increased concentration layer (B) having a concentration of the metal (R) that is not less than 10 times the average concentration of the metal (R) in the ball bump is provided at the bonding interface of the ball bump and the electrode.
摘要翻译： 公开了可以实现低材料成本的铜基接合线的接合结构，并且在用于凸块的楔形接合的反向接合中，可以实现高连续接合的生产率和高可靠性，例如在高温加热 ，热循环测试，回流测试或HAST测试。 接合结构包括连接到形成在半导体元件中的电极上的球凸块上的接合线。 接合线和球凸起主要由铜组成。 在接合部分的界面处设置具有不小于球凸块中的金属（R）的平均浓度的10倍的铜以外的金属（R）的浓度增加的浓度层（A） 。 在球凸块和电极的接合界面处设置具有不小于球凸块中的金属（R）的平均浓度的10倍的金属（R）浓度的增加的浓度层（B）。
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公开(公告)号：KR101341725B1
公开(公告)日：2013-12-16
申请号：KR1020107020084
申请日：2008-07-24
IPC分类号： H01L21/60
CPC分类号： H01L24/85 , H01L24/05 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43825 , H01L2224/43847 , H01L2224/43848 , H01L2224/43986 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/456 , H01L2224/45639 , H01L2224/45644 , H01L2224/45655 , H01L2224/45664 , H01L2224/45669 , H01L2224/45671 , H01L2224/45673 , H01L2224/4568 , H01L2224/45684 , H01L2224/48011 , H01L2224/48227 , H01L2224/48247 , H01L2224/4845 , H01L2224/48463 , H01L2224/48472 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48664 , H01L2224/48724 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48864 , H01L2224/78251 , H01L2224/78301 , H01L2224/85045 , H01L2224/85048 , H01L2224/85065 , H01L2224/85075 , H01L2224/85203 , H01L2224/85205 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2224/859 , H01L2924/00011 , H01L2924/00015 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01058 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01105 , H01L2924/01204 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/12041 , H01L2924/15747 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/3025 , H01L2924/3861 , H01L2924/01001 , H01L2924/01203 , H01L2924/01034 , H01L2924/01081 , H01L2924/20645 , H01L2924/20652 , H01L2924/20653 , H01L2924/00014 , H01L2924/20108 , H01L2224/45657 , H01L2224/45666 , H01L2924/01008 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/2076 , H01L2924/2065 , H01L2924/20651 , H01L2924/20654 , H01L2924/00 , H01L2224/45124 , H01L2924/013 , H01L2924/20751 , H01L2924/2075 , H01L2924/00013 , H01L2924/01049
摘要： 재료비가저렴하고, 볼접합성, 열사이클시험또는리플로우시험의신뢰성이우수하며, 보관수명이양호하고, 협피치용세선화에도적응하는구리계본딩와이어를제공하는것을목적으로한다. 구리를주성분으로하는심재와, 상기심재위에설치된, 상기심재와성분및 조성의어느하나또는두 가지가모두다른금속 M과구리를함유하는외층을가진본딩와이어로서, 상기외층의두께가 0.021 내지 0.12 ㎛인것을특징으로하는반도체장치용본딩와이어.
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公开(公告)号：KR101100564B1
公开(公告)日：2011-12-29
申请号：KR1020117017997
申请日：2008-12-02
CPC分类号： C22C5/04 , B23K35/0222 , B23K35/30 , B23K35/3006 , B23K35/3013 , B23K35/302 , C22C5/02 , C22C5/06 , C22C9/00 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43848 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/45676 , H01L2224/48011 , H01L2224/48227 , H01L2224/48247 , H01L2224/4851 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48839 , H01L2224/48844 , H01L2224/78301 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/851 , H01L2224/85205 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/859 , H01L2924/00011 , H01L2924/00015 , H01L2924/01203 , H01L2924/01204 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/3011 , H01L2924/3025 , H01L2924/3861 , H01L2924/01028 , H01L2924/01046 , H01L2924/01004 , H01L2924/0102 , H01L2924/01078 , H01L2924/01005 , H01L2924/01015 , H01L2924/01083 , H01L2924/01014 , H01L2924/01029 , H01L2924/20652 , H01L2924/20656 , H01L2924/20754 , H01L2924/20755 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/00014 , H01L2924/01202 , H01L2224/45655 , H01L2224/45657 , H01L2224/45671 , H01L2224/45666 , H01L2924/0104 , H01L2924/01007 , H01L2924/01018 , H01L2924/01001 , H01L2924/20658 , H01L2924/20654 , H01L2224/48824 , H01L2924/00 , H01L2924/013 , H01L2924/00013 , H01L2924/2075 , H01L2924/01049 , H01L2924/01006
摘要： 본 발명은 와이어의 표면 성상, 루프의 직선성, 루프 높이의 안정성, 와이어의 접합 형상의 안정화가 우수하고, 세선화, 협피치화, 롱 팬화, 3차원 실장 등의 반도체 실장 기술에도 적응하는, 고기능의 본딩 와이어를 제공하는 것을 목적으로 한다. 도전성 금속으로 이루어지는 심재와, 상기 심재 위에 이 심재와는 다른 면심입방정의 금속을 주성분으로 하는 표피층을 가진 반도체 장치용 본딩 와이어로서, 상기 표피층의 표면에 있어서의 길이 방향의 결정 방위 중에서, 이 차지하는 비율이 50% 이상인 것을 특징으로 하는 반도체 장치용 본딩 와이어이다.
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公开(公告)号：KR1020110098010A
公开(公告)日：2011-08-31
申请号：KR1020117017997
申请日：2008-12-02
CPC分类号： C22C5/04 , B23K35/0222 , B23K35/30 , B23K35/3006 , B23K35/3013 , B23K35/302 , C22C5/02 , C22C5/06 , C22C9/00 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43848 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/45676 , H01L2224/48011 , H01L2224/48227 , H01L2224/48247 , H01L2224/4851 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48839 , H01L2224/48844 , H01L2224/78301 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/851 , H01L2224/85205 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/859 , H01L2924/00011 , H01L2924/00015 , H01L2924/01203 , H01L2924/01204 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/3011 , H01L2924/3025 , H01L2924/3861 , H01L2924/01028 , H01L2924/01046 , H01L2924/01004 , H01L2924/0102 , H01L2924/01078 , H01L2924/01005 , H01L2924/01015 , H01L2924/01083 , H01L2924/01014 , H01L2924/01029 , H01L2924/20652 , H01L2924/20656 , H01L2924/20754 , H01L2924/20755 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/00014 , H01L2924/01202 , H01L2224/45655 , H01L2224/45657 , H01L2224/45671 , H01L2224/45666 , H01L2924/0104 , H01L2924/01007 , H01L2924/01018 , H01L2924/01001 , H01L2924/20658 , H01L2924/20654 , H01L2224/48824 , H01L2924/00 , H01L2924/013 , H01L2924/00013 , H01L2924/2075 , H01L2924/01049 , H01L2924/01006
摘要： 본 발명은 와이어의 표면 성상, 루프의 직선성, 루프 높이의 안정성, 와이어의 접합 형상의 안정화가 우수하고, 세선화, 협피치화, 롱 팬화, 3차원 실장 등의 반도체 실장 기술에도 적응하는, 고기능의 본딩 와이어를 제공하는 것을 목적으로 한다. 도전성 금속으로 이루어지는 심재와, 상기 심재 위에 이 심재와는 다른 면심입방정의 금속을 주성분으로 하는 표피층을 가진 반도체 장치용 본딩 와이어로서, 상기 표피층의 표면에 있어서의 길이 방향의 결정 방위 중에서, 이 차지하는 비율이 50% 이상인 것을 특징으로 하는 반도체 장치용 본딩 와이어이다.
摘要翻译： 本发明具有优异的表面外观，线性度，稳定性，线的环的导线环高度的粘结的形状的稳定化，薄型化，窄间距，长paenhwa，适于半导体安装技术，如三维安装， 并且本发明的目的是提供一种高性能接合线。 和由导电金属制成的，在半导体器件接合线具有皮肤层，其主要成分的芯材是芯材料的金属和在芯材的另一面心立方晶，在表皮层的表面上的长度方向的晶体取向，＆LT; 100＆GT 是50％或更多。
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公开(公告)号：KR101057271B1
公开(公告)日：2011-08-16
申请号：KR1020097026933
申请日：2009-01-20
IPC分类号： H01L21/60
CPC分类号： C22C5/02 , B21C37/047 , B23K35/0261 , B23K35/0272 , B23K35/24 , B23K35/30 , B23K35/3006 , B23K35/3013 , B23K35/302 , C22C9/00 , C22F1/08 , C22F1/14 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43825 , H01L2224/43848 , H01L2224/43986 , H01L2224/45014 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/45169 , H01L2224/45173 , H01L2224/45176 , H01L2224/45565 , H01L2224/45572 , H01L2224/456 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/45676 , H01L2224/48011 , H01L2224/48227 , H01L2224/48247 , H01L2224/48471 , H01L2224/48479 , H01L2224/4848 , H01L2224/4849 , H01L2224/4851 , H01L2224/48511 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48839 , H01L2224/48844 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85186 , H01L2224/85203 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2225/06562 , H01L2924/00015 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/0102 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01327 , H01L2924/10253 , H01L2924/12041 , H01L2924/14 , H01L2924/15311 , H01L2924/15747 , H01L2924/20752 , H01L2924/3025 , H01L2924/01004 , H01L2924/01203 , H01L2224/45655 , H01L2224/45657 , H01L2224/45671 , H01L2224/45666 , H01L2924/01204 , H01L2924/01202 , H01L2224/48465 , H01L2924/20751 , H01L2924/01001 , H01L2924/20655 , H01L2924/20652 , H01L2924/20653 , H01L2924/20654 , H01L2924/20656 , H01L2924/00 , H01L2224/48824 , H01L2924/00014 , H01L2924/013 , H01L2924/20753 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/2075 , H01L2924/20754
摘要： 본 발명은 볼 직상부의 와이어 무너짐(리닝) 및 스프링 불량을 억제할 수 있고, 루프의 직선성, 루프 높이의 안정성 등에도 우수하여, 적층 칩 접속, 세선화, 협피치 실장 등의 반도체 실장 기술에도 적응하는 고기능의 본딩 와이어를 제공하는 것을 목적으로 한다. 도전성 금속으로 이루어지는 심재와, 이 심재 위에 심재와는 다른 금속을 주성분으로 하는 표피층을 가진 본딩 와이어로서, 이 표피층의 표면에 있어서의 결정립의 원주 방향의 평균 사이즈 a와, 와이어 축의 수직 단면에 있어서의 이 심재의 결정립의 평균 사이즈 b와의 관계에 대하여, a≤0.7인 반도체 장치용 본딩 와이어이다.
본딩 와이어, 리닝, 스프링 불량, 루프의 직진성-
公开(公告)号：KR1020090101346A
公开(公告)日：2009-09-25
申请号：KR1020097003941
申请日：2008-01-15
IPC分类号： H01L21/60
CPC分类号： H01L24/78 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/4312 , H01L2224/4321 , H01L2224/43821 , H01L2224/43825 , H01L2224/43826 , H01L2224/43848 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4556 , H01L2224/45565 , H01L2224/456 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/48011 , H01L2224/48227 , H01L2224/48247 , H01L2224/4845 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48699 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/48764 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/781 , H01L2224/78268 , H01L2224/78301 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85186 , H01L2224/85203 , H01L2224/85205 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2924/00011 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01204 , H01L2924/01327 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/3025 , H01L2924/351 , H01L2924/01001 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/00014 , H01L2924/00015 , H01L2224/45655 , H01L2224/45657 , H01L2224/45671 , H01L2224/45666 , H01L2924/20652 , H01L2924/20655 , H01L2924/00 , H01L2224/48824 , H01L2924/013 , H01L2924/2075 , H01L2924/01049 , H01L2924/01006
摘要： Provided is a bonding structure of a bonding wire, which solves problems of conventional technologies in practical application of a double layer copper bonding wire, has improved formability and bondability of a ball section, improved bonding strength of wedge connection and is excellent in industrial productivity. A method for forming such bonding structure is also provided. The bonding wire has copper as a main component, and an increased concentration layer having a high concentration of a conductive metal other than cupper is formed on a ball bonding section. The increased concentration layer is formed at the vicinity of the surface of the ball boding section or on an interface of the ball bonding section. The thickness of a region having a conductive metal concentration of 0.05-20mol% is preferably 0.1μm or more, and the conductive metal concentration of the increased concentration layer is preferably approximately five times the average concentration of the conductive metal at the ball bonding section other than that on the increased concentration layer.
摘要翻译： 提供一种接合线的接合结构，其解决了双层铜接合线的实际应用中的传统技术的问题，具有改善的成形性和球形部分的粘合性，提高了楔形连接的接合强度，并且工业生产率优异。 还提供了形成这种结合结构的方法。 接合线具有铜作为主要成分，并且在球接合部上形成具有高于铜的导电金属浓度的浓度增加的浓度层。 增加的浓度层形成在球形部分的表面附近或球形接合部分的界面上。 导电性金属浓度为0.05〜20摩尔％的区域的厚度优选为0.1μm以上，并且增加浓度层的导电性金属浓度优选为球形接合部的其他导电性金属的平均浓度的5倍 比增加浓度层。
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公开(公告)号：KR1020120035093A
公开(公告)日：2012-04-13
申请号：KR1020107028435
申请日：2010-07-16
CPC分类号： C22C5/04 , C22C5/02 , C22C5/06 , C22C9/00 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43848 , H01L2224/45015 , H01L2224/45124 , H01L2224/45147 , H01L2224/4516 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/48011 , H01L2224/48247 , H01L2224/48471 , H01L2224/4851 , H01L2224/48624 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48764 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48864 , H01L2224/78301 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85181 , H01L2224/85186 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2224/85564 , H01L2924/00011 , H01L2924/00015 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L21/48 , H01L21/4864 , H01L21/4885 , H01L21/4889 , H01L2924/01034 , H01L2924/01005 , H01L2924/01015 , H01L2924/01046 , H01L2924/01047 , H01L2924/0102 , H01L2924/01013 , H01L2924/00014 , H01L2224/45144 , H01L2924/01204 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/01001 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/01028 , H01L2924/0105 , H01L2924/01007 , H01L2224/45669 , H01L2924/2076 , H01L2924/01018 , H01L2224/48465 , H01L2924/20654 , H01L2924/20652 , H01L2924/20655 , H01L2924/00 , H01L2924/013 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/01004 , H01L2924/01033
摘要： 본 발명은 팔라듐 도금된 리드 프레임이라도 양호한 웨지 접합성을 확보할 수 있고, 내산화성이 우수한, 구리 또는 구리 합금을 코어선으로 하는 반도체용 본딩 와이어를 제공한다.
구리 또는 구리 합금으로 이루어지는 코어선과, 상기 코어선의 표면에, 10 내지 200㎚의 두께를 갖는 팔라듐을 포함하는 피복층과, 상기 피복층의 표면에, 1 내지 80㎚의 두께를 갖는 귀금속과 팔라듐을 포함하는 합금층을 갖고, 상기 귀금속이 은 또는 금이고, 상기 합금층 중의 상기 귀금속의 농도가 10체적％ 이상 75체적％ 이하인 것을 특징으로 한다.摘要翻译： 提供了一种用于半导体的接合线，即使在与具有优异的耐氧化性且具有铜或铜合金的芯线的钯电镀引线框上接合时也能确保良好的楔粘接性。 该接合线包括：铜或铜合金的芯线; 含有钯的涂层，其厚度为10〜200nm; 以及形成在涂层的表面上的合金层，该合金层含有贵金属和钯，厚度为1〜80nm。 上述贵金属是银或金属，合金层中这种贵金属的浓度不小于10体积％且不大于75体积％。
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