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    High conductive passivation layers and method of forming the same during high aspect ratio plasma etching
    1.
    发明授权
    High conductive passivation layers and method of forming the same during high aspect ratio plasma etching 有权

    公开(公告)号：US12106971B2

    公开(公告)日：2024-10-01

    申请号：US17135216

    申请日：2020-12-28

    申请人： American Air Liquide, Inc.

    发明人： Xiangyu Guo ,  Kayla Diemoz ,  Nathan Stafford

    IPC分类号： H01L21/311

    CPC分类号： H01L21/31144 ,  H01L21/31116

    摘要： Disclosed are methods for forming a high aspect ratio (HAR) structure during a HAR etch process in a substrate in a reaction chamber, the method comprising:



    sequentially or simultaneously exposing the substrate to a vapor of an etchant including a hydrofluorocarbon or fluorocarbon compound and an additive compound, the substrate having a film disposed thereon and a pattered mask layer disposed on the film;
    activating a plasma to produce an activated hydrofluorocarbon or fluorocarbon compound and an activated additive compound; and
    allowing an etching reaction to proceed between the film uncovered by the patterned mask layer and the activated hydrofluorocarbon or fluorocarbon compound and the activated additive compound to selectively etch the film from the patterned mask layer, thereby forming the HAR patterned structure.

    ETCHING METHODS WITH ALTERNATING NON-PLASMA AND PLASMA ETCHING PROCESSES
    2.
    发明公开
    ETCHING METHODS WITH ALTERNATING NON-PLASMA AND PLASMA ETCHING PROCESSES 审中-公开

    公开(公告)号：US20240162042A1

    公开(公告)日：2024-05-16

    申请号：US17974246

    申请日：2022-10-26

    申请人： American Air Liquide, Inc.

    发明人： Xiangyu GUO ,  Nathan STAFFORD

    IPC分类号： H01L21/3065

    CPC分类号： H01L21/30655

    摘要： A method for forming an aperture pattern in a substrate, the substrate including a film disposed thereon and a patterned mask layer disposed on the film, comprises 1) exposing the substrate to a vapor of a passivation molecule in a non-plasma condition for a period to form a surface protective layer on the patterned mask layer, 2) exposing the substrate to a plasma activated etch gas and plasma dry etching the substrate to form apertures over the patterned mask layer in the film with the plasma activated etch gas, and 3) repeating step 1) and 2) until a desired aperture pattern is formed in the film, wherein the surface protective layer is also formed on the sidewalls of the apertures formed in the film, wherein the passivation molecule has a boiling point equal to or larger than 20° C.

    Method to improve profile control during selective etching of silicon nitride spacers
    3.
    发明授权
    Method to improve profile control during selective etching of silicon nitride spacers 有权

    公开(公告)号：US11837474B2

    公开(公告)日：2023-12-05

    申请号：US17945631

    申请日：2022-09-15

    申请人： American Air Liquide, Inc.

    发明人： Xiangyu Guo ,  James Royer ,  Venkateswara R. Pallem ,  Nathan Stafford

    IPC分类号： H01L21/311 ,  H01L29/66 ,  H01L21/3105

    CPC分类号： H01L21/31116 ,  H01L21/31058 ,  H01L29/6653

    摘要： Cyclic etch methods comprise the steps of: i) exposing a SiN layer covering a structure on a substrate in a reaction chamber to a plasma of hydrofluorocarbon (HFC) to form a polymer layer deposited on the SiN layer that modifies the surface of the SiN layer, the HFC having a formula CxHyFz where x=2-5, y>z, the HFC being a saturated or unsaturated, linear or cyclic HFC; ii) exposing the polymer layer deposited on the SiN layer to a plasma of an inert gas, the plasma of the inert gas removing the polymer layer deposited on the SiN layer and the modified surface of the SiN layer on an etch front; and iii) repeating the steps of i) and ii) until the SiN layer on the etch front is selectively removed, thereby forming a substantially vertically straight SiN spacer comprising the SiN layer on the sidewall of the structure.

    Arsenic removal from lead concentrate by ozone treatment and reverse flotation
    8.
    发明授权
    Arsenic removal from lead concentrate by ozone treatment and reverse flotation 有权

    公开(公告)号：US10822673B1

    公开(公告)日：2020-11-03

    申请号：US16716630

    申请日：2019-12-17

    申请人： American Air Liquide, Inc.

    发明人： Sylvester Zuttah

    IPC分类号： B03D1/02 ,  B03D1/06 ,  B03D1/002 ,  C22B1/11

    摘要： Method for removing arsenic mineral from a lead concentrate by reverse flotation with an ozone pre-treatment. The method comprises the steps of: receiving a slurry of the lead concentrate that has previously undergone flotation processes, bubbling ozone into the slurry of the lead concentrate to remove reagents used in previous flotation processes, adding a sulfide salt to the slurry to depress lead mineral, adding an alkali to increase the pH of the slurry, adding a collector and then a frother to the slurry for a reverse flotation processing and floating the arsenic mineral out of the lead mineral to obtain a now-purified lead concentrate.