公开(公告)号：US20250105012A1

公开(公告)日：2025-03-27

申请号：US18896482

申请日：2024-09-25

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Giueseppe Alessio Verni ,  Petro Deminskyi ,  Balaji Kannan ,  Eric Jen cheng Liu ,  Fu Tang ,  Michael Givens ,  Eric James Shero

IPC: H01L21/28

Abstract: Aspects of the disclosure relate to the field of semiconductor devices, including methods and systems for manufacturing semiconductor devices. More particularly, semiconductor structures comprise a dipole layer, which can be formed from a metal and carbon containing layer. Further described are related methods, deposition systems, and devices.

公开(公告)号：US20250101589A1

公开(公告)日：2025-03-27

申请号：US18895795

申请日：2024-09-25

Applicant: ASM IP Holding B.V.

Inventor： Theodorus G.M. Oosterlaken

IPC: C23C16/455 ,  C23C16/458

Abstract: A gas injector and an apparatus constructed and arranged to process a plurality of substrates in a process chamber with such a gas injector may be disclosed. The gas injector may be used to provide a process gas into the process chamber. The gas injector may have a primary conduit elongated along a main axis and a feed end at one end constructed and arranged to connect to a process gas line of the apparatus. There may be provided a plurality of secondary conduits connected with their first end to the primary conduit substantially perpendicular to the main axis of the primary conduit and being provided with a gas exhaust opening at a second end of the secondary conduit to provide the process gas into the process chamber.

公开(公告)号：US20250092566A1

公开(公告)日：2025-03-20

申请号：US18966261

申请日：2024-12-03

Applicant: ASM IP Holding B.V.

Inventor： John Tolle ,  Joseph P. Margetis

IPC: C30B25/14 ,  C30B25/08 ,  C30B25/16 ,  C30B25/18 ,  H01L21/67

Abstract: Gas-phase reactor systems and methods suitable for use with precursors that are solid phase at room temperature and pressure are disclosed. The systems and methods as described herein can be used to, for example, form amorphous, polycrystalline, or epitaxial layers (e.g., one or more doped semiconductor layers) on a surface of a substrate.

公开(公告)号：US20250092513A1

公开(公告)日：2025-03-20

申请号：US18970001

申请日：2024-12-05

Applicant: ASM IP Holding B.V.

Inventor： Eric Christopher Stevens ,  Bhushan Zope ,  Shankar Swaminathan ,  Charles Dezelah ,  Qi Xie ,  Giuseppe Alessio Verni

IPC: C23C16/34 ,  C23C16/02 ,  C23C16/08 ,  C23C16/455 ,  G11C5/06 ,  H01L21/28 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H10B12/00

Abstract: Methods for depositing a molybdenum nitride film on a surface of a substrate are disclosed. The methods may include: providing a substrate into a reaction chamber; and depositing a molybdenum nitride film directly on the surface of the substrate by performing one or more unit deposition cycles of cyclical deposition process, wherein a unit deposition cycle may include, contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, and contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor. Semiconductor device structures including a molybdenum nitride film are also disclosed.

公开(公告)号：US20250087478A1

公开(公告)日：2025-03-13

申请号：US18883125

申请日：2024-09-12

Applicant: ASM IP Holding B.V.

Inventor： Patricio Eduardo Romero ,  Charles Dezelah

IPC: H01L21/02

Abstract: Methods for forming a metal silicate layer for controlling a threshold voltage of metal-oxide semiconductor field effect transistor (MOSFET) are disclosed. The methods include forming a metal silicate threshold adjusting layer on a substrate by contacting the substrate with a precursor comprising an organosilanol precursor or a siloxide precursor.

公开(公告)号：US12247286B2

公开(公告)日：2025-03-11

申请号：US16983364

申请日：2020-08-03

Applicant: ASM IP Holding B.V.

Inventor： Carl Louis White ,  Eric James Shero ,  Kyle Fondurulia ,  Timothy James Sullivan

IPC: F28F7/00 ,  C23C16/455 ,  C23C16/52

Abstract: A cooling apparatus and methods for maintaining a precursor source vessel heater at a desired temperature are disclosed. The apparatus and methods can be used to maintain a desired temperature gradient within the precursor source vessel for improved integrity of the precursor source before delivery of the precursor to a reaction chamber. The apparatus and methods can also be used for rapid cooling of a source vessel for maintenance.

公开(公告)号：US20250081327A1

公开(公告)日：2025-03-06

申请号：US18813147

申请日：2024-08-23

Applicant: ASM IP Holding B.V.

Inventor： Mandar Deshpande

IPC: H05K1/02

Abstract: A non-contact cooling assembly for cooling substrates in equipment front end module in batch is presented. The cooling assembly may comprise a support beam and a plurality of cooling plates, wherein the cooling plates are arranged horizontally stacked and attached to the support beam, and wherein the support beam is configured to move horizontally for cooling substrates. Each of the cooling plates may utilize either thermoelectric cooling effect or cooling fluid for cooling the cooling plates and a cooling plate is placed at a first position (distal position) at first and it moves to a second position (proximal position) for more effective substrate cooling.

公开(公告)号：US20250079234A1

公开(公告)日：2025-03-06

申请号：US18817390

申请日：2024-08-28

Applicant: ASM IP Holding B.V.

Inventor： Hang Zhang

IPC: H01L21/687 ,  H01L21/324

Abstract: A method, system and apparatus for substrate processing that includes a susceptor, a thermal protection plate disposed above the susceptor, the thermal protection plate includes a first lift pin through-hole extending from a top surface of the thermal protection plate to a bottom surface of the thermal protection plate, the susceptor includes a second lift pin through-hole and a plate lift member through-hole, and a plate lift member configured to slidably engage the plate lift member through-hole.

公开(公告)号：US20250079160A1

公开(公告)日：2025-03-06

申请号：US18816044

申请日：2024-08-27

Applicant: ASM IP Holding B.V.

Inventor： Jereld Lee Winkler ,  Devika Choudhury ,  Fu Tang ,  Leonard Rodriguez

IPC: H01L21/02 ,  C23C16/04

Abstract: Methods and systems are disclosed for depositing an oxide in a recess of a substrate, including providing the substrate in a chamber, the substrate including at least one opening to the recess where the at least one opening is bordered by a perimeter in a surface area adjacent to and outside of the recess, where the recess includes an inner surface, pulsing an inhibitor into the chamber to preferentially deposit the inhibitor in a portion of the recess adjacent to at least one opening of the recess and on at least a portion of the surface area, pulsing a precursor into the chamber to chemisorb to the inner surface within the recess, pulsing an oxygen species into the chamber to form the oxide within the recess upon contact with the chemisorbed precursor, and repeating the above recited steps to deposit the oxide to a desired thickness level within the recess.

公开(公告)号：US12243757B2

公开(公告)日：2025-03-04

申请号：US17323288

申请日：2021-05-18

Applicant: ASM IP Holding B.V.

Inventor： Jeroen de Jonge ,  Sumit Sachdeva ,  Lucian Jdira ,  Julien Laurentius Antonius Maria Keijser ,  Theodorus G. M. Oosterlaken

IPC: H01L21/67 ,  F27B17/00 ,  F27D5/00 ,  F27D9/00 ,  H01L21/673

Abstract: The disclosure relates to a flange for a process tube in an apparatus for processing substrates, e.g., a vertical furnace. The flange may be provided with an opening for in use giving access to the process chamber of the process tube and a cooling channel for allowing a cooling fluid to flow there through and cool the flange. A material with a heat conductivity between 0.1 and 40 W/m K may be at least partially provided in between the cooling fluid and the rest of the flange.