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1.发明授权Semiconductor device having die attachment and die pad for applying tensile or compressive stress to the IC chip 失效具有用于向IC芯片施加拉伸或压缩应力的管芯附接的半导体器件和管芯焊盘公开(公告)号：US07239026B2
公开(公告)日：2007-07-03
申请号：US11440068
申请日：2006-05-25
CPC分类号： H01L28/65 , G11C11/22 , H01L24/27 , H01L24/743 , H01L27/105 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/75 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83192 , H01L2224/92247 , H01L2924/14 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device comprises a substrate, a ferroelectric capacitor which includes a ferroelectric film on the substrate, and a stress application layer which applies tensile or compressive stress to the ferroelectric film of the ferroelectric capacitor by applying stress to the substrate.
摘要翻译： 半导体器件包括基板，在基板上包括铁电体膜的铁电电容器，以及通过向基板施加应力而对强电介质电容器的强电介质膜施加拉伸或压缩应力的应力施加层。
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公开(公告)号：US06841080B2
公开(公告)日：2005-01-11
申请号：US10352483
申请日：2003-01-28
申请人： Angus Kingon , Gregory J. Dunn , Stephen Streiffer , Kevin Cheek , Min-Xian Zhang , Jon-Paul Maria , Jovica Savic
发明人： Angus Kingon , Gregory J. Dunn , Stephen Streiffer , Kevin Cheek , Min-Xian Zhang , Jon-Paul Maria , Jovica Savic
CPC分类号： H05K1/162 , H01G4/1218 , H05K2201/0175 , H05K2201/0179 , H05K2201/0355 , H05K2201/09509 , H05K2203/121 , Y10T29/417
摘要： A dielectric film is formed on a free-standing conductive metal layer to form a multi-layer foil comprising a conductive metal layer, a barrier layer and a dielectric oxide layer. Such multi-layer foils are mechanically flexible, and useful for the manufacture of capacitors. Examples of barrier layers include Ni—P or Ni—Cr alloys. After a second layer of conductive metal is deposited on a dielectric oxide surface opposing the first conductive metal layer, the resulting capacitor foil is processed into a capacitor. The resulting capacitor is a surface mounted capacitor or is formed as a integrated or embedded capacitor within a circuit board.
摘要翻译： 在独立的导电金属层上形成电介质膜以形成包含导电金属层，阻挡层和电介质氧化物层的多层箔。 这种多层箔是机械灵活的，并且可用于制造电容器。 阻挡层的实例包括Ni-P或Ni-Cr合金。 在与第一导电金属层相对的电介质氧化物表面上沉积第二层导电金属之后，将所得电容器箔加工成电容器。 所得到的电容器是表面安装的电容器，或者形成为电路板内的集成或嵌入式电容器。
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公开(公告)号：US06541137B1
公开(公告)日：2003-04-01
申请号：US09629504
申请日：2000-07-31
申请人： Angus Kingon , Gregory J. Dunn , Stephen Streiffer , Kevin Cheek , Min-Xian Zhang , Jon-Paul Maria , Jovica Savic
发明人： Angus Kingon , Gregory J. Dunn , Stephen Streiffer , Kevin Cheek , Min-Xian Zhang , Jon-Paul Maria , Jovica Savic
IPC分类号： B32B900
CPC分类号： H05K1/162 , H01G4/1218 , H05K2201/0175 , H05K2201/0179 , H05K2201/0355 , H05K2201/09509 , H05K2203/121 , Y10T29/417
摘要： A dielectric film is formed on a free-standing conductive metal layer to form a multi-layer foil comprising a conductive metal layer, a barrier layer and a dielectric oxide layer. Such multi-layer foils are mechanically flexible, and useful for the manufacture of capacitors. Examples of barrier layers include Ni—P or Ni—Cr alloys. After a second layer of conductive metal is deposited on a dielectric oxide surface opposing the first conductive metal layer, the resulting capacitor foil is processed into a capacitor. The resulting capacitor is a surface mounted capacitor or is formed as a integrated or embedded capacitor within a circuit board.
摘要翻译： 在独立的导电金属层上形成电介质膜以形成包含导电金属层，阻挡层和电介质氧化物层的多层箔。 这种多层箔是机械灵活的，并且可用于制造电容器。 阻挡层的实例包括Ni-P或Ni-Cr合金。 在与第一导电金属层相对的电介质氧化物表面上沉积第二层导电金属之后，将所得电容器箔加工成电容器。 所得到的电容器是表面安装的电容器，或者形成为电路板内的集成或嵌入式电容器。
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4.发明申请Semiconductor device and its manufacture method, and measurement fixture for the semiconductor device 失效半导体器件及其制造方法以及半导体器件的测量夹具公开(公告)号：US20060273365A1
公开(公告)日：2006-12-07
申请号：US11440068
申请日：2006-05-25
IPC分类号： H01L29/94
CPC分类号： H01L28/65 , G11C11/22 , H01L24/27 , H01L24/743 , H01L27/105 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/75 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83192 , H01L2224/92247 , H01L2924/14 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device comprises a substrate, a ferroelectric capacitor which includes a ferroelectric film on the substrate, and a stress application layer which applies tensile or compressive stress to the ferroelectric film of the ferroelectric capacitor by applying stress to the substrate.
摘要翻译： 半导体器件包括基板，在基板上包括铁电体膜的铁电电容器，以及通过向基板施加应力而对强电介质电容器的铁电体膜施加拉伸或压缩应力的应力施加层。
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公开(公告)号：US20050011857A1
公开(公告)日：2005-01-20
申请号：US10621796
申请日：2003-07-17
申请人： William Borland , Jon Ihlefeld , Angus Kingon , Jon-Paul Maria
发明人： William Borland , Jon Ihlefeld , Angus Kingon , Jon-Paul Maria
CPC分类号： H05K1/162 , H01G4/1218 , H05K3/4652 , H05K2201/0175 , H05K2201/0355 , H05K2201/09509 , H05K2203/125
摘要： Dielectrics are formed having high dielectric constants, low loss tangents, and other desirable electrical and physical properties. The dielectrics are annealed at temperatures allowing the use of copper foil substrates, and at low oxygen partial pressures.
摘要翻译： 电介质形成具有高介电常数，低损耗切线和其它所需的电学和物理性能。 电介质在允许使用铜箔衬底的温度下和在低氧分压下进行退火。
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6.发明授权Semiconductor device and its manufacture method, and measurement fixture for the semiconductor device 失效半导体器件及其制造方法以及半导体器件的测量夹具公开(公告)号：US07241656B2
公开(公告)日：2007-07-10
申请号：US11440061
申请日：2006-05-25
IPC分类号： H01L21/8242
CPC分类号： H01L28/65 , G11C11/22 , H01L24/27 , H01L24/743 , H01L27/105 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/75 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83192 , H01L2224/92247 , H01L2924/14 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device comprises a substrate, a ferroelectric capacitor which includes a ferroelectric film on the substrate, and a stress application layer which applies tensile or compressive stress to the ferroelectric film of the ferroelectric capacitor by applying stress to the substrate.
摘要翻译： 半导体器件包括基板，在基板上包括铁电体膜的铁电电容器，以及通过向基板施加应力而对强电介质电容器的铁电体膜施加拉伸或压缩应力的应力施加层。
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7.发明申请公开(公告)号：US20050227098A1
公开(公告)日：2005-10-13
申请号：US11139769
申请日：2005-05-27
申请人： Jon-Paul Maria , Angus Kingon
发明人： Jon-Paul Maria , Angus Kingon
IPC分类号： B05D3/02 , B05D5/12 , B32B9/00 , B32B15/04 , C04B35/491 , C04B35/64 , H01G4/12 , H01L21/316
CPC分类号： C04B35/64 , C04B35/491 , C04B2235/6584 , C04B2235/664 , C04B2235/768 , H01G4/1245 , Y10T428/1291 , Y10T428/264 , Y10T428/265 , Y10T428/31678
摘要： Oxygen partial pressure may be controlled during annealing of a perovskite dielectric layer by providing an oxygen-absorbing layer adjacent the perovskite dielectric layer, and annealing the perovskite dielectric layer in an ambient that includes an ambient oxygen partial pressure, such that the oxygen-absorbing layer locally reduces the oxygen partial pressure adjacent the perovskite dielectric layer to below the ambient oxygen partial pressure. Thus, a perovskite dielectric layer can be annealed without the need to provide ultra-high vacuum and/or ultra-high purity ambient environments.
摘要翻译： 可以通过提供邻近钙钛矿电介质层的氧吸收层和在包括环境氧分压的环境中对钙钛矿介电层进行退火来在钙钛矿电介质层退火期间控制氧分压，使得氧吸收层 局部地将邻近钙钛矿电介质层的氧分压降低到环境氧分压以下。 因此，可以对钙钛矿电介质层进行退火，而不需要提供超高真空和/或超高纯度环境环境。
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公开(公告)号：US20060211156A1
公开(公告)日：2006-09-21
申请号：US11440061
申请日：2006-05-25
IPC分类号： H01L21/00
CPC分类号： H01L28/65 , G11C11/22 , H01L24/27 , H01L24/743 , H01L27/105 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/75 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83192 , H01L2224/92247 , H01L2924/14 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device comprises a substrate, a ferroelectric capacitor which includes a ferroelectric film on the substrate, and a stress application layer which applies tensile or compressive stress to the ferroelectric film of the ferroelectric capacitor by applying stress to the substrate.
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9.发明授权Semiconductor device having a stress layer for applying tensile of compressive stress to the ferroelectric film 失效具有用于对强电介质膜施加压缩应力拉伸的应力层的半导体装置公开(公告)号：US07075135B2
公开(公告)日：2006-07-11
申请号：US10716878
申请日：2003-11-20
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L28/65 , G11C11/22 , H01L24/27 , H01L24/743 , H01L27/105 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/75 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83192 , H01L2224/92247 , H01L2924/14 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device comprises a substrate, a ferroelectric capacitor which includes a ferroelectric film on the substrate, and a stress application layer which applies tensile or compressive stress to the ferroelectric film of the ferroelectric capacitor by applying stress to the substrate.
摘要翻译： 半导体器件包括基板，在基板上包括铁电体膜的铁电电容器，以及通过向基板施加应力而对强电介质电容器的铁电体膜施加拉伸或压缩应力的应力施加层。
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