公开(公告)号：US20080145797A1

公开(公告)日：2008-06-19

申请号：US11977878

申请日：2007-10-26

Applicant: Steven Verha Verbeke ,  J. Kelly Truman ,  Christopher T. Lane ,  Sasson R. Somekh

Inventor： Steven Verha Verbeke ,  J. Kelly Truman ,  Christopher T. Lane ,  Sasson R. Somekh

IPC: G03F7/00

CPC classification number: H01L21/67207 ,  G03F7/16 ,  H01L21/67115 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/67184 ,  H01L21/6719 ,  Y10S414/135 ,  Y10S414/141 ,  Y10S438/905

Abstract: A method of a single wafer wet/dry cleaning apparatus comprising: a transfer chamber having a wafer handler contained therein; a first single wafer wet cleaning chamber directly coupled to the transfer chamber; and a first single wafer ashing chamber directly coupled to the transfer chamber.

公开(公告)号：US06712020B2

公开(公告)日：2004-03-30

申请号：US10170827

申请日：2002-06-12

Applicant: Michael S. Cox ,  Canfeng Lai ,  Robert B. Majewski ,  David P. Wanamaker ,  Christopher T. Lane ,  Peter Loewenhardt ,  Shamouil Shamouilian ,  John P. Parks

Inventor： Michael S. Cox ,  Canfeng Lai ,  Robert B. Majewski ,  David P. Wanamaker ,  Christopher T. Lane ,  Peter Loewenhardt ,  Shamouil Shamouilian ,  John P. Parks

IPC: C23C1600

CPC classification number: H01J37/32009 ,  H01J37/321

Abstract: A toroidal plasma source (28) within a substrate processing chamber (10). The toroidal plasma source forms a poloidal plasma with theta symmetry. The poloidal plasma current is essentially parallel to a surface of the plasma generating structure, thus reducing sputtering erosion of the inner walls. The plasma current is similarly essentially parallel to a process surface (32) of a substrate (34) within the chamber. In a further embodiment, a shaped member (66) between the substrate and the plasma source controls the plasma density in a selected fashion to enhance plasma processing uniformity.

Abstract translation: 衬底处理室（10）内的环形等离子体源（28）。 环形等离子体源形成具有θ对称性的极向等离子体。 极向等离子体电流基本上平行于等离子体产生结构的表面，从而减少内壁的溅射侵蚀。 等离子体电流类似地基本上平行于腔室内的衬底（34）的工艺表面（32）。 在另一实施例中，衬底和等离子体源之间的成形构件（66）以选定的方式控制等离子体密度，以提高等离子体处理的均匀性。

公开(公告)号：US20080066678A1

公开(公告)日：2008-03-20

申请号：US11523101

申请日：2006-09-19

Applicant: Terry Bluck ,  Kevin P. Fairbairn ,  Michael S. Barnes ,  Christopher T. Lane

Inventor： Terry Bluck ,  Kevin P. Fairbairn ,  Michael S. Barnes ,  Christopher T. Lane

IPC: C23C16/00

CPC classification number: H01L21/67184 ,  H01L21/67173 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67745

Abstract: There is described apparatus and methods for transporting and processing substrates including wafers as to efficiently produce at reasonable costs improved throughput as compared to systems in use today. A key element is the use of a transport chamber along the sides of processing chambers for feeding substrates into a controlled atmosphere through a load lock and then along a transport chamber as a way of reaching processing chambers and then out of the controlled atmosphere following processing in the processing chambers.

Abstract translation: 描述了与目前使用的系统相比，用于运输和处理包括晶片的基板以便以合理的成本有效地生产提高的生产量的装置和方法。 关键要素是沿着处理室的侧面使用传送室，用于通过装载锁定将基板输送到受控气氛中，然后沿着传送室作为到达处理室的方式，然后在受控气氛中进行处理 处理室。

公开(公告)号：US06418874B1

公开(公告)日：2002-07-16

申请号：US09584167

申请日：2000-05-25

Applicant: Michael S. Cox ,  Canfeng Lai ,  Robert B. Majewski ,  David P. Wanamaker ,  Christopher T. Lane ,  Peter Loewenhardt ,  Shamouil Shamouilian ,  John P. Parks

Inventor： Michael S. Cox ,  Canfeng Lai ,  Robert B. Majewski ,  David P. Wanamaker ,  Christopher T. Lane ,  Peter Loewenhardt ,  Shamouil Shamouilian ,  John P. Parks

IPC: C23C1600

CPC classification number: H01J37/32009 ,  H01J37/321

Abstract: A toroidal plasma source (28) within a substrate processing chamber (10). The toroidal plasma source forms a poloidal plasma with theta symmetry. The poloidal plasma current is essentially parallel to a surface of the plasma generating structure, thus reducing sputtering erosion of the inner walls. The plasma current is similarly essentially parallel to a process surface (32) of a substrate (34) within the chamber. In a further embodiment, a shaped member (66) between the substrate and the plasma source controls the plasma density in a selected fashion to enhance plasma processing uniformity.

Abstract translation: 衬底处理室（10）内的环形等离子体源（28）。 环形等离子体源形成具有θ对称性的极向等离子体。 极向等离子体电流基本上平行于等离子体产生结构的表面，从而减少内壁的溅射侵蚀。 等离子体电流类似地基本上平行于腔室内的衬底（34）的工艺表面（32）。 在另一实施例中，衬底和等离子体源之间的成形构件（66）以选定的方式控制等离子体密度，以提高等离子体处理的均匀性。

公开(公告)号：US09524896B2

公开(公告)日：2016-12-20

申请号：US12368241

申请日：2009-02-09

Applicant: Terry Bluck ,  Kevin P. Fairbairn ,  Michael S. Barnes ,  Christopher T. Lane

Inventor： Terry Bluck ,  Kevin P. Fairbairn ,  Michael S. Barnes ,  Christopher T. Lane

IPC: H01L21/677 ,  C23C14/56 ,  C23C16/54 ,  H01L21/67

CPC classification number: H01L21/67745 ,  C23C14/568 ,  C23C16/54 ,  C23C16/545 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67184 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67709

Abstract: There is described apparatus and methods for transporting and processing substrates including wafers as to efficiently produce at reasonable costs improved throughput as compared to systems in use today. A linear transport chamber includes linear tracks and robot arms riding on the linear tracks to linearly transfer substrates along the sides of processing chambers for feeding substrates into a controlled atmosphere through a load lock and then along a transport chamber as a way of reaching processing chambers.

Abstract translation: 描述了与目前使用的系统相比，用于运输和处理包括晶片的基板以便以合理的成本有效地生产提高的生产量的装置和方法。 线性传送室包括线性轨道和机器人手臂，该线性轨道和机器人臂骑在线性轨道上，以沿着处理室的侧面线性地传送衬底，用于通过负载锁定将衬底馈送到受控气氛中，然后沿着运送室作为到达处理室的方式。

公开(公告)号：US08303764B2

公开(公告)日：2012-11-06

申请号：US13042407

申请日：2011-03-07

Applicant: Terry Bluck ,  Kevin P. Fairbairn ,  Michael S. Barnes ,  Christopher T. Lane

Inventor： Terry Bluck ,  Kevin P. Fairbairn ,  Michael S. Barnes ,  Christopher T. Lane

IPC: C23F1/00 ,  H01L21/306 ,  H01L21/677 ,  C23C16/00 ,  C23C14/00

CPC classification number: H01L21/67184 ,  H01L21/67173 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67745

Abstract: There is described apparatus and methods for transporting and processing substrates including wafers as to efficiently produce at reasonable costs improved throughput as compared to systems in use today. A key element is the use of a transport chamber along the sides of processing chambers for feeding substrates into a controlled atmosphere through a load lock and then along a transport chamber as a way of reaching processing chambers and then out of the controlled atmosphere following processing in the processing chambers.

公开(公告)号：US08293066B2

公开(公告)日：2012-10-23

申请号：US12325993

申请日：2008-12-01

Applicant: Terry Bluck ,  Kevin P. Fairbairn ,  Michael S. Barnes ,  Christopher T. Lane

Inventor： Terry Bluck ,  Kevin P. Fairbairn ,  Michael S. Barnes ,  Christopher T. Lane

IPC: C23F1/00 ,  H01L21/306 ,  H01L21/677 ,  C23C16/00 ,  C23C14/00

CPC classification number: H01L21/67745 ,  H01L21/67173 ,  H01L21/67184 ,  H01L21/67201

Abstract: There is described apparatus and methods for transporting and processing substrates including wafers as to efficiently produce at reasonable costs improved throughput as compared to systems in use today. A key element is the use of a transport chamber along the sides of processing chambers for feeding substrates into a controlled atmosphere through a load lock and then along a transport chamber as a way of reaching processing chambers and then out of the controlled atmosphere following processing in the processing chambers.

Abstract translation: 描述了与目前使用的系统相比，用于运输和处理包括晶片的基板以便以合理的成本有效地生产提高的生产量的装置和方法。 关键要素是沿着处理室的侧面使用传送室，用于通过装载锁定将基板输送到受控气氛中，然后沿着传送室作为到达处理室的方式，然后在受控气氛中进行处理 处理室。

公开(公告)号：US20110158773A1

公开(公告)日：2011-06-30

申请号：US13042407

申请日：2011-03-07

Applicant: Terry BLUCK ,  Kevin P. Fairbairn ,  Michael S. Barnes ,  Christopher T. Lane

Inventor： Terry BLUCK ,  Kevin P. Fairbairn ,  Michael S. Barnes ,  Christopher T. Lane

IPC: H01L21/677

CPC classification number: H01L21/67184 ,  H01L21/67173 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67745

Abstract: There is described apparatus and methods for transporting and processing substrates including wafers as to efficiently produce at reasonable costs improved throughput as compared to systems in use today. A key element is the use of a transport chamber along the sides of processing chambers for feeding substrates into a controlled atmosphere through a load lock and then along a transport chamber as a way of reaching processing chambers and then out of the controlled atmosphere following processing in the processing chambers.

Abstract translation: 描述了与目前使用的系统相比，用于运输和处理包括晶片的基板以便以合理的成本有效地生产提高的生产量的装置和方法。 关键要素是沿着处理室的侧面使用传送室，用于通过装载锁定将基板输送到受控气氛中，然后沿着传送室作为到达处理室的方式，然后在受控气氛中进行处理 处理室。

公开(公告)号：US07585686B2

公开(公告)日：2009-09-08

申请号：US11978004

申请日：2007-10-26

Applicant: Steven Verhaverbeke ,  J Kelly Truman ,  Christopher T Lane ,  Sasson R Somekh

Inventor： Steven Verhaverbeke ,  J Kelly Truman ,  Christopher T Lane ,  Sasson R Somekh

IPC: H01L21/66 ,  H01L21/00 ,  B65G25/00 ,  B66C17/08

CPC classification number: H01L21/67207 ,  G03F7/16 ,  H01L21/67115 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/67184 ,  H01L21/6719 ,  Y10S414/135 ,  Y10S414/141 ,  Y10S438/905

Abstract: A method of a single wafer wet/dry cleaning apparatus comprising: a transfer chamber having a wafer handler contained therein; a first single wafer wet cleaning chamber directly coupled to the transfer chamber; and a first single wafer ashing chamber directly coupled to the transfer chamber.

Abstract translation: 一种单晶片湿式/干式清洗设备的方法，包括：一个传送室，其中包含一个晶片处理器; 直接耦合到传送室的第一单晶片湿清洁室; 以及直接耦合到传送室的第一单个晶片灰化室。

公开(公告)号：US20130171757A1

公开(公告)日：2013-07-04

申请号：US13732662

申请日：2013-01-02

Applicant: HARI K. PONNEKANTI ,  Alexander S. Polyak ,  James L'Heureux ,  Michael S. Cox ,  Christopher T. Lane ,  Edward P. Hammond, IV ,  Hemant P. Mungekar ,  Susanne Schlaefer ,  Wolfgang Buschbeck ,  Juergen Henrich ,  Andreas Lopp

Inventor： HARI K. PONNEKANTI ,  Alexander S. Polyak ,  James L'Heureux ,  Michael S. Cox ,  Christopher T. Lane ,  Edward P. Hammond, IV ,  Hemant P. Mungekar ,  Susanne Schlaefer ,  Wolfgang Buschbeck ,  Juergen Henrich ,  Andreas Lopp

IPC: H01L31/18

CPC classification number: H01L31/18 ,  C23C14/568 ,  C23C16/54 ,  H01L21/67115 ,  H01L21/67173 ,  H01L21/6776

Abstract: The present invention generally provides a high throughput substrate processing system that is used to form one or more regions of a solar cell device. In one configuration of a processing system, one or more solar cell passivating or dielectric layers are deposited and further processed within one or more processing chambers contained within the high throughput substrate processing system. The processing chambers may be, for example, plasma enhanced chemical vapor deposition (PECVD) chambers, low pressure chemical vapor deposition (LPCVD) chambers, atomic layer deposition (ALD) chambers, physical vapor deposition (PVD) or sputtering chambers, thermal processing chambers (e.g., RTA or RTO chambers), substrate reorientation chambers (e.g., flipping chambers) and/or other similar processing chambers.

Abstract translation: 本发明通常提供用于形成太阳能电池器件的一个或多个区域的高通量衬底处理系统。 在处理系统的一种配置中，一个或多个太阳能电池钝化或电介质层被沉积并在包含在高通量衬底处理系统内的一个或多个处理室内进一步处理。 处理室可以是例如等离子体增强化学气相沉积（PECVD）室，低压化学气相沉积（LPCVD）室，原子层沉积（ALD）室，物理气相沉积（PVD）或溅射室，热处理室 （例如，RTA或RTO室），基板重新定向室（例如，翻转室）和/或其它类似的处理室。