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    Light-emitting diodes and method of manufacturing the same
    1.
    发明授权
    Light-emitting diodes and method of manufacturing the same 失效
    发光二极管及其制造方法

    公开(公告)号：US5717226A

    公开(公告)日：1998-02-10

    申请号：US715889

    申请日：1996-09-18

    申请人： Biing-Jye Lee ,  Chuan-Ming Chang ,  Ming-Jiunn Jou

    发明人： Biing-Jye Lee ,  Chuan-Ming Chang ,  Ming-Jiunn Jou

    IPC分类号： H01L33/14 ,  H01L33/30 ,  H01L33/42 ,  H01L27/15 ,  H01L31/12 ,  H01L33/00

    CPC分类号： H01L33/42 ,  H01L33/145 ,  H01L33/30

    摘要： A surface-emitting AlGaInP LED is disclosed. The manufacturing method comprises the steps of: (i) forming a buffer layer, a first type of AlGaInP cladding layer, a AlGaInP active layer, a second type of AlGaInP cladding layer, and a second type of contact layer on a first type of GaAs substrate; (ii) forming a conductive transparent electrode; (iii) by using photolithography and etching techniques, a first photoresist layer with a hole is formed on the middle above the transparent electrode; (iv) etching the portion of the transparent electrode and the second type of GaAs layer not covered by the photoresist layer until the second type of AlGaInP cladding layer; (v) forming a metal layer on the hole being etched to form a Schottky barrier; (vi) thermal annealed to thicken an native oxide formed between the metal layer and the second type of AlGaInP cladding layer to increase the Schottky barrier level; (vii) removing the first photoresist layer, and coating a back electrode on an opposite surface of the first type of GaAs substrate; (viii) employing the photolithography and etching techniques and a mask being used in the photolithography of step (iii) to form a second photoresist layer with a hole at the center thereof; and (ix) forming a second metal over the metal layer being formed on the second type of AlGaInP cladding layer at step (v). The Schottky barrier and the native oxide serve as a current-blocking layer, and the luminance of a light-emitting diode is improved.

    摘要翻译： 公开了一种表面发射AlGaInP LED。 该制造方法包括以下步骤：（i）在第一种类型的GaAs上形成缓冲层，第一种AlGaInP包覆层，AlGaInP有源层，第二类型的AlGaInP包覆层和第二类型的接触层 基质; （ii）形成导电透明电极; （iii）通过使用光刻和蚀刻技术，在透明电极上的中间形成具有孔的第一光致抗蚀剂层; （iv）蚀刻透明电极的部分和未被光致抗蚀剂层覆盖的第二类型的GaAs层，直到第二类型的AlGaInP包层; （v）在被蚀刻的孔上形成金属层以形成肖特基势垒; （vi）热退火以增强形成在金属层和第二类型的AlGaInP包层之间的自然氧化物，以增加肖特基势垒层; （vii）去除第一光致抗蚀剂层，并在第一类型GaAs衬底的相对表面上涂覆背电极; （viii）使用光刻和蚀刻技术，并且在步骤（iii）的光刻中使用掩模以在其中心形成具有孔的第二光致抗蚀剂层; 以及（ix）在步骤（v）在所述第二类型的AlGaInP包层上形成在所述金属层上形成的第二金属。 肖特基势垒和天然氧化物用作电流阻挡层，并且改善了发光二极管的亮度。

    Light emitting diode having an insulating substrate
    4.
    发明授权
    Light emitting diode having an insulating substrate 有权
    具有绝缘基板的发光二极管

    公开(公告)号：US06936860B2

    公开(公告)日：2005-08-30

    申请号：US10063822

    申请日：2002-05-16

    申请人： Shu-Wen Sung ,  Chin-Fu Ku ,  Chia-Cheng Liu ,  Min-Hsun Hsieh ,  Chao-Nien Huang ,  Chen Ou ,  Chuan-Ming Chang

    发明人： Shu-Wen Sung ,  Chin-Fu Ku ,  Chia-Cheng Liu ,  Min-Hsun Hsieh ,  Chao-Nien Huang ,  Chen Ou ,  Chuan-Ming Chang

    IPC分类号： H01L21/28 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/42 ,  H01L33/00 ,  H01L29/12

    CPC分类号： H01L33/04 ,  H01L33/14 ,  H01L33/325

    摘要： An LED includes an insulating substrate; a buffer layer positioned on the insulating substrate; an n+-type contact layer positioned on the buffer layer, the contact layer having a first surface and a second surface; an n-type cladding layer positioned on the first surface of the n+-type contact layer; a light-emitting layer positioned on the n-type cladding layer; a p-type cladding layer positioned on the light-emitting layer; a p-type contact layer positioned on the p-type cladding layer; an n+-type reverse-tunneling layer positioned on the p-type contact layer; a p-type transparent ohmic contact electrode positioned on the n+-type reverse-tunneling layer; and an n-type transparent ohmic contact electrode positioned on the second surface of the n+-type contact layer. The p-type transparent ohmic contact electrode and the n-type transparent ohmic contact electrode are made of the same materials.

    摘要翻译： LED包括绝缘基板; 位于所述绝缘基板上的缓冲层; 位于所述缓冲层上的n + + +型接触层，所述接触层具有第一表面和第二表面; 位于n +型接触层的第一表面上的n型覆层; 定位在n型包覆层上的发光层; 位于发光层上的p型覆层; 位于p型覆层上的p型接触层; 位于p型接触层上的n + H +型反向隧穿层; 位于n + +反向隧穿层上的p型透明欧姆接触电极; 以及位于n + +型接触层的第二表面上的n型透明欧姆接触电极。 p型透明欧姆接触电极和n型透明欧姆接触电极由相同的材料制成。

    LED package
    6.
    发明授权
    LED package 失效
    LED封装

    公开(公告)号：US06667497B1

    公开(公告)日：2003-12-23

    申请号：US10271532

    申请日：2002-10-17

    申请人： Teng-Huei Huang ,  Chuan-Ming Chang ,  Tse-Min Mao ,  Min-Huang Huang

    发明人： Teng-Huei Huang ,  Chuan-Ming Chang ,  Tse-Min Mao ,  Min-Huang Huang

    IPC分类号： H01L2972

    CPC分类号： H01L25/0753 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A LED package is comprised of a flat panel base and three LED dies. The flat panel base is composed of a first golden film area, a second golden film area, a third golden film area, a fourth golden film area, a first connection area, and a second connection area, wherein the first connection area and the second connection area are connected to the first golden film area. The first LED die is attached on the flat panel base by flip-chip mounting, wherein an anode of the first LED die is connected to the first golden film area, and a cathode of the first LED die is connected to the second golden film area. The second LED die is attached on the flat panel base by flip-chip mounting, wherein the second LED die is composed of an anode connected to the first golden film area, and a cathode connected to the fourth golden film area. The third LED die is attached on the third golden film area; wherein the third LED die is composed of an anode connected to the first golden film area by a metallic wire, and a cathode connected to the third golden film area.

    摘要翻译： LED封装由平板基板和三个LED管芯组成。 平板基座由第一金色膜区域，第二金色膜区域，第三金属膜区域，第四金属膜区域，第一连接区域和第二连接区域构成，其中，第一连接区域和第二金属膜区域 连接区域连接到第一金膜区域。 第一LED管芯通过倒装芯片安装在平板基板上，其中第一LED管芯的阳极连接到第一金膜区域，第一LED管芯的阴极连接到第二金属膜区域 。 第二LED管芯通过倒装芯片安装在平板基板上，其中第二LED管芯由与第一金膜区连接的阳极和与第四金膜区连接的阴极组成。 第三个LED模具安装在第三金膜区域; 其中所述第三LED管芯由通过金属线连接到所述第一金色膜区域的阳极和连接到所述第三金属膜区域的阴极构成。

    Inverted light emitting diode
    7.
    发明授权
    Inverted light emitting diode 有权
    反向发光二极管

    公开(公告)号：US06169294A

    公开(公告)日：2001-01-02

    申请号：US09149260

    申请日：1998-09-08

    申请人： Lee Biing-Jye ,  Jou Ming-Jiunn ,  Jacob C. Tarn ,  Chuan-Ming Chang ,  Liu Chia-Cheng

    发明人： Lee Biing-Jye ,  Jou Ming-Jiunn ,  Jacob C. Tarn ,  Chuan-Ming Chang ,  Liu Chia-Cheng

    IPC分类号： H01L2715

    CPC分类号： H01L33/62 ,  H01L33/32 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A nitride light emitting diode is fabricated on a transparent sapphire substrate. The LED is then mounted upside-down on a conductive silicon substrate with a bottom electrode to serve as the output terminal for the cathode of the LED. The LED die is partially etched to expose the anode of the LED, where a top electrode is formed. In comparison with conventional LED structure with both electrodes located on top of the die, moving one electrode to the bottom allows more light to be transmitted upward and reflects the light incident downward. For equal amount of light emission, the new structure occupies less area.

    摘要翻译： 在透明蓝宝石衬底上制造氮化物发光二极管。 然后将LED反向安装在具有底部电极的导电硅衬底上，以用作LED的阴极的输出端子。 LED芯片被部分蚀刻以露出形成顶部电极的LED的阳极。 与具有位于模具顶部的两个电极的常规LED结构相比，将一个电极移动到底部允许更多的光向上传输并且反射入射到下方的光。 对于等量的发光，新结构占地面积较小。