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14 条记录 (耗时 0.013 秒)

    LIGHT EMITTING DEVICE
    1.
    发明申请
    LIGHT EMITTING DEVICE 失效
    发光装置

    公开(公告)号：US20110315957A1

    公开(公告)日：2011-12-29

    申请号：US13224676

    申请日：2011-09-02

    申请人： Won Ha MOON ,  Chang Hwan CHOI ,  Dong Woohn KIM ,  Hyun Jun KIM

    发明人： Won Ha MOON ,  Chang Hwan CHOI ,  Dong Woohn KIM ,  Hyun Jun KIM

    IPC分类号： H01L33/06

    CPC分类号： H01L33/0037 ,  H01L33/08 ,  H01L33/22 ,  H01L2933/0083 ,  Y10S977/762

    摘要： There is provided a light emitting device of a simpler structure, capable of ensuring a broad light emitting area and a high light emitting efficiency, while manufactured in a simplified and economically efficient process. The light emitting device including: a semiconductor layer; an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line; an insulating layer formed on the active layer; and a metal layer formed on the insulating layer.

    摘要翻译： 提供了一种结构简单的发光器件，其能够在简化且经济有效的工艺制造的同时确保宽的发光面积和高发光效率。 该发光器件包括：半导体层; 形成在所述半导体层上的有源层，所述有源层包括量子阱结构，量子点和量子线中的至少一个; 形成在所述有源层上的绝缘层; 以及形成在所述绝缘层上的金属层。

    Light emitting device
    3.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号：US08030664B2

    公开(公告)日：2011-10-04

    申请号：US12000360

    申请日：2007-12-12

    申请人： Won Ha Moon ,  Chang Hwan Choi ,  Dong Woohn Kim ,  Hyun Jun Kim

    发明人： Won Ha Moon ,  Chang Hwan Choi ,  Dong Woohn Kim ,  Hyun Jun Kim

    IPC分类号： H01L33/06

    CPC分类号： H01L33/0037 ,  H01L33/08 ,  H01L33/22 ,  H01L2933/0083 ,  Y10S977/762

    摘要： There is provided a light emitting device of a simpler structure, capable of ensuring a broad light emitting area and a high light emitting efficiency, while manufactured in a simplified and economically efficient process. The light emitting device including: a semiconductor layer; an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line; an insulating layer formed on the active layer; and a metal layer formed on the insulating layer.

    摘要翻译： 提供了一种结构简单的发光器件，其能够在简化且经济有效的工艺制造的同时确保宽的发光面积和高发光效率。 该发光器件包括：半导体层; 形成在所述半导体层上的有源层，所述有源层包括量子阱结构，量子点和量子线中的至少一个; 形成在所述有源层上的绝缘层; 以及形成在所述绝缘层上的金属层。

    Nanowire light emitting device and method of manufacturing the same
    4.
    发明授权
    Nanowire light emitting device and method of manufacturing the same 有权
    纳米线发光装置及其制造方法

    公开(公告)号：US08809901B2

    公开(公告)日：2014-08-19

    申请号：US12750195

    申请日：2010-03-30

    申请人： Won Ha Moon ,  Dong Woohn Kim ,  Jong Pa Hong

    发明人： Won Ha Moon ,  Dong Woohn Kim ,  Jong Pa Hong

    IPC分类号： H01L33/32

    CPC分类号： H05B33/145 ,  B82Y20/00 ,  B82Y30/00 ,  H01L33/18 ,  Y10S977/764 ,  Y10S977/816 ,  Y10S977/90 ,  Y10S977/95

    摘要： The invention provides a nanowire light emitting device and a manufacturing method thereof. In the light emitting device, first and second conductivity type clad layers are formed and an active layer is interposed therebetween. At least one of the first and second conductivity type clad layers and the active layer is a semiconductor nanowire layer obtained by preparing a layer of a mixture composed of a semiconductor nanowire and an organic binder and removing the organic binder therefrom.

    摘要翻译： 本发明提供一种纳米线发光器件及其制造方法。 在发光器件中，形成第一和第二导电型覆盖层，并且其间插入有源层。 第一和第二导电型覆盖层和有源层中的至少一个是通过制备由半导体纳米线和有机粘合剂构成的混合物层并从其中除去有机粘合剂而获得的半导体纳米线层。

    SWITCHED RELUCTANCE MOTOR
    5.
    发明申请
    SWITCHED RELUCTANCE MOTOR 审中-公开
    开关式电动机

    公开(公告)号：US20130082549A1

    公开(公告)日：2013-04-04

    申请号：US13324833

    申请日：2011-12-13

    申请人： Moon Kyu Han ,  Han Kyung Bae ,  Dong Woohn Kim

    发明人： Moon Kyu Han ,  Han Kyung Bae ,  Dong Woohn Kim

    IPC分类号： H02K21/38

    CPC分类号： H02K21/44

    摘要： Disclosed herein is a switched reluctance motor including: a stator including a plurality of magnets and stator salient poles disposed between the plurality of magnets; and a rotor including salient poles formed at an inner diameter thereof so as to face the stator salient poles, wherein three stator salient poles are disposed between the magnets, the number of stator salient poles is 6*N and the number of salient poles of the rotor facing the stator salient poles is 3*N, where N indicates a natural number of 2 or more.

    摘要翻译： 本发明公开了一种开关磁阻电动机，包括：定子，其包括设置在所述多个磁体之间的多个磁体和定子凸极; 以及转子，其包括形成在其内径处的凸极以面对定子凸极，其中三个定子凸极设置在磁体之间，定子极磁极的数量为6 * N，并且极点的数量 面向定子凸极的转子为3 * N，其中N表示2以上的自然数。

    Light emitting device
    6.
    发明申请
    Light emitting device 有权
    发光装置

    公开(公告)号：US20080142782A1

    公开(公告)日：2008-06-19

    申请号：US12000360

    申请日：2007-12-12

    申请人： Won Ha Moon ,  Chang Hwan Choi ,  Dong Woohn Kim ,  Hyun Jun Kim

    发明人： Won Ha Moon ,  Chang Hwan Choi ,  Dong Woohn Kim ,  Hyun Jun Kim

    IPC分类号： H01L33/00

    CPC分类号： H01L33/0037 ,  H01L33/08 ,  H01L33/22 ,  H01L2933/0083 ,  Y10S977/762

    摘要： There is provided a light emitting device of a simpler structure, capable of ensuring a broad light emitting area and a high light emitting efficiency, while manufactured in a simplified and economically efficient process. The light emitting device including: a semiconductor layer; an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line; an insulating layer formed on the active layer; and a metal layer formed on the insulating layer.

    摘要翻译： 提供了一种结构简单的发光器件，其能够在简化且经济有效的工艺制造的同时确保宽的发光面积和高发光效率。 该发光器件包括：半导体层; 形成在所述半导体层上的有源层，所述有源层包括量子阱结构，量子点和量子线中的至少一个; 形成在所述有源层上的绝缘层; 以及形成在所述绝缘层上的金属层。

    Light emitting device
    7.
    发明授权
    Light emitting device 失效
    发光装置

    公开(公告)号：US08471268B2

    公开(公告)日：2013-06-25

    申请号：US13224676

    申请日：2011-09-02

    申请人： Won Ha Moon ,  Chang Hwan Choi ,  Dong Woohn Kim ,  Hyun Jun Kim

    发明人： Won Ha Moon ,  Chang Hwan Choi ,  Dong Woohn Kim ,  Hyun Jun Kim

    IPC分类号： H01L33/06

    CPC分类号： H01L33/0037 ,  H01L33/08 ,  H01L33/22 ,  H01L2933/0083 ,  Y10S977/762

    摘要： There is provided a light emitting device of a simpler structure, capable of ensuring a broad light emitting area and a high light emitting efficiency, while manufactured in a simplified and economically efficient process. The light emitting device including: a semiconductor layer; an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line; an insulating layer formed on the active layer; and a metal layer formed on the insulating layer.

    摘要翻译： 提供了一种结构简单的发光器件，其能够在简化且经济有效的工艺制造的同时确保宽的发光面积和高发光效率。 该发光器件包括：半导体层; 形成在所述半导体层上的有源层，所述有源层包括量子阱结构，量子点和量子线中的至少一个; 形成在所述有源层上的绝缘层; 以及形成在所述绝缘层上的金属层。

    NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH ELECTRODE PATTERN
    9.
    发明申请
    NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH ELECTRODE PATTERN 审中-公开
    具有电极图案的氮化物半导体发光器件

    公开(公告)号：US20120056150A1

    公开(公告)日：2012-03-08

    申请号：US13292774

    申请日：2011-11-09

    申请人： Jin Bock LEE ,  Dong Woohn Kim ,  Sang Ho Yoon ,  Pun Jae Choi

    发明人： Jin Bock LEE ,  Dong Woohn Kim ,  Sang Ho Yoon ,  Pun Jae Choi

    IPC分类号： H01L33/04

    CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/32

    摘要： A nitride semiconductor light-emitting device with an electron pattern that applies current uniformly to an active layer to improve light emission efficiency is provided. The nitride semiconductor light-emitting device includes multiple layers of a substrate, an n-type nitride layer, an active layer of a multi-quantum-well structure, and a p-type nitride layer. The nitride semiconductor light-emitting device further includes a p-electrode pattern and an n-electrode pattern. The p-electrode pattern includes one or more p-pads disposed on the p-type nitride layer, and one or more p-fingers extending from the p-pads. The n-electrode pattern includes one or more n-pads disposed on an exposed region of the n-type nitride layer to correspond to the p-pads, and one or more n-fingers extending from the n-pads. The n-fingers have identical resistance, and the p-fingers have identical resistance to improve current spreading to the active layer.

    摘要翻译： 提供了具有均匀地向有源层施加电流以提高发光效率的电子图案的氮化物半导体发光器件。 氮化物半导体发光器件包括多层衬底，n型氮化物层，多量子阱结构的有源层和p型氮化物层。 氮化物半导体发光器件还包括p电极图案和n电极图案。 p电极图案包括设置在p型氮化物层上的一个或多个p焊盘以及从p焊盘延伸的一个或多个p指。 n电极图案包括设置在n型氮化物层的暴露区域上以对应于p焊盘的一个或多个n焊盘以及从n焊盘延伸的一个或多个n指。 n指具有相同的电阻，并且p指具有相同的电阻以改善向有源层的电流扩展。