摘要:
An electronic device can include an insulating layer and a fin-type transistor structure. The fin-type structure can have a semiconductor fin and a gate electrode spaced apart from each other. A dielectric layer and a spacer structure can lie between the semiconductor fin and the gate electrode. The semiconductor fin can include channel region including a portion associated with a relatively higher VT lying between a portion associated with a relatively lower VT and the insulating layer. In one embodiment, the supply voltage is lower than the relatively higher VT of the channel region. A process for forming the electronic device is also disclosed.
摘要翻译:电子器件可以包括绝缘层和鳍型晶体管结构。 翅片型结构可以具有彼此间隔开的半导体翅片和栅电极。 电介质层和间隔结构可以位于半导体鳍片和栅电极之间。 半导体鳍片可以包括沟道区域,该沟道区域包括与相对较低V T T T相关的部分与绝缘层之间相对较高的V SUB相关联的部分。 在一个实施例中,电源电压低于沟道区的相对较高的V SUB。 还公开了一种用于形成电子器件的工艺。
摘要:
Disclosed herein are methods of inhibiting the activity of Botulinum neurotoxin A metalloprotease with the compounds disclosed herein. Also disclosed are methods of treating, inhibiting or preventing intoxication caused by bacteria of at least one bacterial strain in a subject, and pharmaceutical and cosmetic compositions comprising the compounds disclosed herein.
摘要:
A semiconductor device has recesses formed in the substrate during removal of the anti-reflective coating (ARC) because these recess locations are exposed during the etching of the ARC. Although the etchant is chosen to be selective between the ARC material and the substrate material, this selectivity is limited so that recesses do occur. A problem associated with the formation of these recesses is that the source/drains have further to diffuse to become overlapped with the gate. The result is that the transistors may have reduced current drive. The problem is avoided by waiting to perform the ARC removal until at least after formation of a sidewall spacer around the gate. The consequent recess formation thus occurs further from the gate, which results in reducing or eliminating the impediment this recess can cause to the source/drain diffusion that desirably extends to overlap with the gate.
摘要:
Disclosed herein is a pharmacophore model for inhibiting Botulinum neurotoxin A metalloprotease activity which comprises a first plane A, a second plane B, a first hydrophobic moiety C, a second hydrophobic moiety D and a positive ionizable substituent E. The pharmacophore model may further comprise a heteroatom in the first plane A. In some embodiments, the distance between the center of the first plane A and the center of the second plane B is about 6.5 to about 9.5 Å. In some embodiments, the distance between the center of the first hydrophobic moiety C and the center of the second hydrophobic moiety D is about 8.0 to about 16.0 Å. In some embodiments, the distance between the center of the first plane to the center of the first hydrophobic moiety C is about 3.0 to about 5.0 Å. In some embodiments, the distance between the center of the second plane to the center of the second hydrophobic moiety C is about 3.0 to about 5.0 Å. In some embodiments, the distance between the center of the first plane to the center of the positive ionizable substituent is about 6.5 to about 9.5 Å.
摘要:
A method of producing a silicon based alloy is described which comprises melting a silicon alloy containing greater than 50 wt. % silicon and preferably including aluminium. The melted alloy is then inert gas atomized to produce powder or a spray formed deposit in which the silicon forms a substantially continuous phase made up of fine, randomly oriented crystals in the microstructure. The alloy produced by the method has particularly useful application in electronics packaging materials and a typical example comprises an alloy of 70 wt. % silicon and 30 wt. % aluminium. Such an alloy is an engineering material which, for example, is machinable.
摘要:
Systems, methods, and computer program products use combinations of international mobile equipment identity (IMEI), international mobile subscriber identity (IMSI), and account information to determine if a customer is eligible for service credit in near real-time. The customer needs an active account prior to inserting a subscriber identity module (SIM) into a device and powering on the device for the system to determine credit eligibility. No further customer action is required. The credit application process determines credit eligibility based upon device credit eligibility, account tenure, and/or credit rules, and applies the credit to the customer's account. The customer may be proactively notified when the credit is applied. The credit and tenure rules may be changed as the industry and business needs change to remain competitive in the industry. The SIM used is configured with software to lock the SIM to the device upon first power-on.
摘要:
A device is disclosed having a first Field Effect Transistor having a channel region controlled by a gate, a second Field Effect Transistor having a first channel region substantially controlled by a first gate, and a second channel region substantially controlled by a second gate. The gate of the first Field Effect Transistor and the first gate of the second Field Effect Transistor are coupled to a memory write line. The second gate of the second Field Effect Transistor receives a control signal from a memory bit cell.
摘要:
A method for making a semiconductor device is provided. The method includes forming a first transistor with a vertical active region and a horizontal active region extending on both sides of the vertical active region. The method further includes forming a second transistor with a vertical active region. The method further includes forming a third transistor with a vertical active region and a horizontal active region extending on only one side of the vertical active region.
摘要:
A stainless-steel boat hull system and method. Exemplary embodiments include a method of maintaining steel-hulled boats, including accessing a steel boat hull, removing surface layers of the boat hull, identifying structurally supportive layers of the boat hull, priming the boat hull, attaching pre-selected stainless steel plates to the boat hull in an overlapped arrangement and connecting adjacent stainless steel plates.
摘要:
A method for forming a semiconductor device is provided. The method includes forming a n-type well region. The method further includes forming a gate corresponding to the semiconductor device on top of the n-type well region. The method further includes forming a source-drain extension region on each side of the gate in the n-type well region using a p-type dopant. The method further includes doping the source-drain extension region on each side of the gate in the n-type well region using a n-type dopant such that the n-type dopant is substantially encompassed within the source-drain extension region. The method further includes forming a source and a drain corresponding to the semiconductor device.