公开(公告)号：US08595861B2

公开(公告)日：2013-11-26

申请号：US13475806

申请日：2012-05-18

Applicant: Bernard HaoChih Liu ,  Fang-Yi Liao ,  Jian-Hong Chen

Inventor： Bernard HaoChih Liu ,  Fang-Yi Liao ,  Jian-Hong Chen

IPC: G01Q60/58

CPC classification number: G01Q60/58 ,  Y10S977/867

Abstract: A thermal probe includes a support element, a conductive pattern and a tip. The conductive pattern is disposed at the support element and has plural bending portions. The tip has a base and a pinpoint. The base has a first surface and a second surface which is opposite to the first surface. The pinpoint is disposed at the first surface. The second surface is connected with the conductive pattern. The bending portions are contacted with the first surface. The tip of the thermal probe is replaceable, and the user can choose the optimum combination of the tip, conductive pattern and support element according to their needs.

Abstract translation: 热探针包括支撑元件，导电图案和尖端。 导电图案设置在支撑元件处并且具有多个弯曲部分。 尖端具有基部和精确点。 底座具有与第一表面相对的第一表面和第二表面。 精确位置设置在第一表面。 第二表面与导电图案连接。 弯曲部分与第一表面接触。 热敏探头的尖端是可更换的，用户可以根据需要选择尖端，导电图案和支撑元件的最佳组合。

公开(公告)号：US08450052B2

公开(公告)日：2013-05-28

申请号：US13274840

申请日：2011-10-17

Applicant: Feng-Cheng Hsu ,  Jian-Hong Chen

Inventor： Feng-Cheng Hsu ,  Jian-Hong Chen

IPC: G03F7/26

CPC classification number: H01L21/0271 ,  H01L21/31144

Abstract: A method of lithography patterning includes forming a first resist pattern on a substrate, the first resist pattern including a plurality of openings therein on the substrate; forming a second resist pattern on the substrate and within the plurality of openings of the first resist pattern, the second resist pattern including at least one opening therein on the substrate; and removing the first resist pattern to uncover the substrate underlying the first resist pattern.

Abstract translation: 光刻图案的方法包括在基板上形成第一抗蚀剂图案，第一抗蚀剂图案在基板上包括多个开口; 在所述基板上和所述第一抗蚀剂图案的所述多个开口内形成第二抗蚀剂图案，所述第二抗蚀剂图案在所述基板上包括至少一个开口; 以及去除第一抗蚀剂图案以露出第一抗蚀剂图案下方的基板。

公开(公告)号：US07972957B2

公开(公告)日：2011-07-05

申请号：US11363860

申请日：2006-02-27

Applicant: Bang-Chein Ho ,  Jen-Chieh Shih ,  Jian-Hong Chen

Inventor： Bang-Chein Ho ,  Jen-Chieh Shih ,  Jian-Hong Chen

IPC: H01L21/44

CPC classification number: H01L21/76816 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/76838 ,  H01L21/76885

Abstract: A method of making a semiconductor device including forming a first sacrificial layer over a first layer to be etched, the first sacrificial layer having a plurality of openings formed therethrough exposing a portion of the first layer; forming a first photoresist layer over the first sacrificial layer and filling the plurality of openings formed through the first sacrificial layer; forming a plurality of openings in the first photoresist layer, each one of the plurality of openings in the first photoresist layer overlying one of the openings in the first sacrificial layer and wherein each opening in the first sacrificial layer has a smaller cross-sectional area then the cross-sectional area of the overlying opening in the first photoresist layer; and etching the first layer through the openings in the first photoresist layer and the first sacrificial layer, comprising exposing the first layer to an etching material.

Abstract translation: 一种制造半导体器件的方法，包括在待蚀刻的第一层上形成第一牺牲层，所述第一牺牲层具有通过其形成的多个开口，暴露出所述第一层的一部分; 在所述第一牺牲层上形成第一光致抗蚀剂层并填充通过所述第一牺牲层形成的所述多个开口; 在所述第一光致抗蚀剂层中形成多个开口，所述第一光致抗蚀剂层中的所述多个开口中的每一个覆盖所述第一牺牲层中的所述开口之一，并且其中所述第一牺牲层中的每个开口具有较小的横截面积， 第一光致抗蚀剂层中的覆盖开口的横截面积; 以及通过所述第一光致抗蚀剂层和所述第一牺牲层中的所述开口蚀刻所述第一层，包括将所述第一层暴露于蚀刻材料。

公开(公告)号：US20100209852A1

公开(公告)日：2010-08-19

申请号：US12389279

申请日：2009-02-19

Applicant: Hsiao-Wei Yeh ,  Chi-Kang Chang ,  Jian-Hong Chen ,  Kuo-Chun Huang

Inventor： Hsiao-Wei Yeh ,  Chi-Kang Chang ,  Jian-Hong Chen ,  Kuo-Chun Huang

IPC: G03F7/00 ,  B05B7/00 ,  B05C11/00 ,  H01L21/02

CPC classification number: H01L21/6715 ,  G03F7/16 ,  G03F7/30

Abstract: The present disclosure provides a method for fabricating a semiconductor device using a track pipeline system. The method includes storing a plurality of chemicals in a plurality of storage units of the system, wherein each storage unit is operable to store one of the chemicals, mixing the chemicals into a mixture, and dispensing the mixture onto a wafer using a nozzle of the system.

Abstract translation: 本公开提供了一种使用轨道管道系统来制造半导体器件的方法。 该方法包括将多种化学品存储在系统的多个存储单元中，其中每个存储单元可操作地存储化学品中的一种，将化学品混合到混合物中，并且使用 系统。

公开(公告)号：US20100068656A1

公开(公告)日：2010-03-18

申请号：US12210737

申请日：2008-09-15

Applicant: Hsiao-Wei Yeh ,  Ching-Yu Chang ,  Jian-Hong Chen ,  Chih-An Lin

Inventor： Hsiao-Wei Yeh ,  Ching-Yu Chang ,  Jian-Hong Chen ,  Chih-An Lin

IPC: G03F7/20

CPC classification number: H01L21/0273 ,  G03F7/0035 ,  G03F7/405 ,  H01L21/3086

Abstract: The present invention includes a lithography method comprising forming a first patterned insist layer including at least one opening therein over a substrate. A water-soluble polymer layer is formed over the first patterned resist layer and the substrate, whereby a reaction occurs at the interface of the first patterned resist layer and the water-soluble polymer layer. The non-reacted water-soluble polymer layer is removed. Thereafter, a second patterned resist layer is formed over the substrate, wherein at least one portion of the second patterned resist layer is disposed within the at least one opening of the first patterned resist layer or abuts at least one portion of the first patterned resist layer. The substrate is thereafter etched using the first and second patterned resist layers as a mask.

Abstract translation: 本发明包括光刻方法，包括在衬底上形成包括至少一个开口的第一图案化坚固层。 在第一图案化抗蚀剂层和基底上形成水溶性聚合物层，由此在第一图案化抗蚀剂层和水溶性聚合物层的界面处发生反应。 去除未反应的水溶性聚合物层。 此后，在衬底上形成第二图案化抗蚀剂层，其中第二图案化抗蚀剂层的至少一部分设置在第一图案化抗蚀剂层的至少一个开口内，或者邻接第一图案化抗蚀剂层的至少一部分 。 然后使用第一和第二图案化抗蚀剂层作为掩模蚀刻衬底。

公开(公告)号：US07452822B2

公开(公告)日：2008-11-18

申请号：US11352815

申请日：2006-02-13

Applicant: Jen-Chieh Shih ,  Bang-Ching Ho ,  Jian-Hong Chen

Inventor： Jen-Chieh Shih ,  Bang-Ching Ho ,  Jian-Hong Chen

IPC: H01L21/302

CPC classification number: H01L21/76808

Abstract: A method for forming a dual damascene structure in a semiconductor device manufacturing process where via plugs which may include a thickness portion of a plug filling material overlying the process surface is formed by diffusing an acid into a plug filling material layer followed by reacting the acid with the plug filling material layer to form a soluble portion which is then removed using a solvent. A remaining portion of the plug filling material is cured and a BARC layer may be formed over the process surface prior to patterning trenches in an overlying resist layer and forming a dual damascene structure.

Abstract translation: 一种用于在半导体器件制造工艺中形成双镶嵌结构的方法，其中可以包括覆盖在工艺表面上的塞子填充材料的厚度部分的通孔塞通过将酸扩散到塞填充材料层中，然后使酸与 塞子填充材料层以形成可溶部分，然后使用溶剂除去。 塞子填充材料的剩余部分被固化，并且可以在上覆的抗蚀剂层中的沟槽图案形成双重镶嵌结构之前，在工艺表面上形成BARC层。

公开(公告)号：US20080156346A1

公开(公告)日：2008-07-03

申请号：US11616964

申请日：2006-12-28

Applicant: Hsien-Cheng Wang ,  Hung Chang Hsieh ,  Tsiao-Chen Wu ,  Jian-Hong Chen

Inventor： Hsien-Cheng Wang ,  Hung Chang Hsieh ,  Tsiao-Chen Wu ,  Jian-Hong Chen

IPC: B08B3/08 ,  B08B1/04 ,  B08B11/02

CPC classification number: H01L21/67046 ,  G03F7/168 ,  G03F7/70341 ,  G03F7/70925 ,  H01L21/67028

Abstract: A method for photolithography processing includes forming a photoresist layer on a surface of a substrate, baking the substrate to remove solvents from the photoresist layer, cleaning an edge of the substrate with a tape, and exposing the photoresist layer with radiation energy. The tape includes a cleaning material. The tape is positioned proximate to or in contact with the edge of the substrate while the substrate is rotating.

Abstract translation: 一种用于光刻处理的方法包括在基板的表面上形成光致抗蚀剂层，烘烤基板以从光致抗蚀剂层去除溶剂，用带清洁基板的边缘，以及用辐射能曝光光致抗蚀剂层。 胶带包括清洁材料。 当衬底旋转时，带被定位成与衬底的边缘接近或接触。

公开(公告)号：US20070202690A1

公开(公告)日：2007-08-30

申请号：US11363860

申请日：2006-02-27

Applicant: Bang-Chein Ho ,  Jen-Chieh Shih ,  Jian-Hong Chen

Inventor： Bang-Chein Ho ,  Jen-Chieh Shih ,  Jian-Hong Chen

IPC: H01L21/4763

CPC classification number: H01L21/76816 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/76838 ,  H01L21/76885

Abstract: A method of making a semiconductor device including forming a first sacrificial layer over a first layer to be etched, the first sacrificial layer having a plurality of openings formed therethrough exposing a portion of the first layer; forming a first photoresist layer over the first sacrificial layer and filling the plurality of openings formed through the first sacrificial layer; forming a plurality of openings in the first photoresist layer, each one of the plurality of openings in the first photoresist layer overlying one of the openings in the first sacrificial layer and wherein each opening in the first sacrificial layer has a smaller cross-sectional area then the cross-sectional area of the overlying opening in the first photoresist layer; and etching the first layer through the openings in the first photoresist layer and the first sacrificial layer, comprising exposing the first layer to an etching material

Abstract translation: 一种制造半导体器件的方法，包括在待蚀刻的第一层上形成第一牺牲层，所述第一牺牲层具有通过其形成的多个开口，暴露出所述第一层的一部分; 在所述第一牺牲层上形成第一光致抗蚀剂层并填充通过所述第一牺牲层形成的所述多个开口; 在所述第一光致抗蚀剂层中形成多个开口，所述第一光致抗蚀剂层中的所述多个开口中的每一个覆盖所述第一牺牲层中的所述开口之一，并且其中所述第一牺牲层中的每个开口具有较小的横截面积， 第一光致抗蚀剂层中的覆盖开口的横截面积; 以及通过所述第一光致抗蚀剂层和所述第一牺牲层中的所述开口蚀刻所述第一层，包括将所述第一层暴露于蚀刻材料

公开(公告)号：US07254513B2

公开(公告)日：2007-08-07

申请号：US10947092

申请日：2004-09-22

Applicant: Mu-Tsang Lin ,  Yi-Yu Wu ,  Chia-Hung Chung ,  Jian-Hong Chen ,  Chon-Hwa Chu ,  Ie-Fun Lai ,  Wen-Sheng Chien

Inventor： Mu-Tsang Lin ,  Yi-Yu Wu ,  Chia-Hung Chung ,  Jian-Hong Chen ,  Chon-Hwa Chu ,  Ie-Fun Lai ,  Wen-Sheng Chien

IPC: G06F15/00 ,  G06F19/00

CPC classification number: G05B23/024 ,  G05B19/41865 ,  G05B23/0281 ,  G05B2219/32191 ,  G05B2219/45031 ,  Y02P90/20 ,  Y02P90/22

Abstract: An apparatus for fault detection and classification (FDC) specification management including a storage device and a process module. The storage device stores a specification management record and a chart profile record. The specification management record stores statistical algorithm settings of a parameter and the chart profile record stores chart frame and alarm condition information. The process module, which resides in a memory, receives a manipulation message corresponding to the specification management record, and accordingly manipulates the chart profile record.

Abstract translation: 一种用于故障检测和分类（FDC）规范管理的装置，包括存储装置和处理模块。 存储设备存储规范管理记录和图表简档记录。 规范管理记录存储参数的统计算法设置，图表简档记录存储图表框和报警条件信息。 驻留在存储器中的处理模块接收与规范管理记录相对应的操作消息，并相应地操纵图表简档记录。

公开(公告)号：US07117058B2

公开(公告)日：2006-10-03

申请号：US10875331

申请日：2004-06-24

Applicant: Mu-Tsang Lin ,  Tien-Wen Wang ,  Joseph W. L. Fang ,  Ie-Fun Lai ,  Chon-Hwa Chu ,  Jian-Hong Chen ,  Chin-Chih Chen ,  Yu-Yi Wu ,  Yao-Wen Wu ,  Wen-Sheng Chien

Inventor： Mu-Tsang Lin ,  Tien-Wen Wang ,  Joseph W. L. Fang ,  Ie-Fun Lai ,  Chon-Hwa Chu ,  Jian-Hong Chen ,  Chin-Chih Chen ,  Yu-Yi Wu ,  Yao-Wen Wu ,  Wen-Sheng Chien

IPC: G06F19/00

CPC classification number: G05B19/41875 ,  G05B2219/32191 ,  G05B2219/45031 ,  Y02P90/20 ,  Y02P90/22

Abstract: A system and method for automatic SPC chart generation including a storage device and a data acquisition module. The storage device stores a chamber management tree, a recipe window management tree, a parameter configuration table and multiple chart profile records. The data acquisition module, which resides in a memory, acquires multiple process events and parameter values corresponding to the process events and a process parameter, selects a relevant statistical algorithm, calculates a statistical value by applying the statistical algorithm to the parameter values, creates a new chart profile record and a parameter statistics record therein if the chart profile record is absent, and stores the statistical values and measured time in the parameter statistics record.

Abstract translation: 一种用于自动生成SPC图的系统和方法，包括存储装置和数据采集模块。 存储装置存储室管理树，配方窗口管理树，参数配置表和多个图表简档记录。 驻留在存储器中的数据采集模块获取对应于过程事件的多个过程事件和参数值以及过程参数，选择相关的统计算法，通过将统计算法应用于参数值来计算统计值，创建一个 如果没有图表配置文件记录，则将新的图表配置文件记录和参数统计记录存储在其中，并将统计值和测量时间存储在参数统计记录中。