公开(公告)号：US10002777B2

公开(公告)日：2018-06-19

申请号：US15363334

申请日：2016-11-29

Applicant: K.C.Tech Co., Ltd.

Inventor： Young Kyu Kweon ,  Joon Ho An ,  Byoung Chaul Son ,  Jin Sung Rho

IPC: H01L21/67 ,  H01L21/673

CPC classification number: H01L21/67023 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/67075 ,  H01L21/67126 ,  H01L21/67161 ,  H01L21/67219 ,  H01L21/67288 ,  H01L21/67326 ,  H01L21/67742 ,  H01L21/67745 ,  H01L21/68707

Abstract: Provided is a substrate processing system and a substrate processing method. The substrate processing system includes a polishing part for performing a Chemical Mechanical Polishing (CMP) process on a substrate, a cleaning part for cleaning the substrate on which the polishing process is performed, and a substrate transferring part for transferring the substrate to the cleaning part before polishing the substrate in the polishing part. The substrate may be preparatorily cleaned in the cleaning part before the polishing process, and then enters the polishing part.

公开(公告)号：US20170323807A1

公开(公告)日：2017-11-09

申请号：US15363334

申请日：2016-11-29

Applicant: K.C.Tech Co., Ltd.

Inventor： Young Kyu Kweon ,  Joon Ho An ,  Byoung Chaul Son ,  Jin Sung Rho

IPC: H01L21/67 ,  H01L21/673

CPC classification number: H01L21/67023 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/67075 ,  H01L21/67126 ,  H01L21/67161 ,  H01L21/67219 ,  H01L21/67288 ,  H01L21/67326 ,  H01L21/67742 ,  H01L21/67745 ,  H01L21/68707

Abstract: Provided is a substrate processing system and a substrate processing method. The substrate processing system includes a polishing part for performing a Chemical Mechanical Polishing (CMP) process on a substrate, a cleaning part for cleaning the substrate on which the polishing process is performed, and a substrate transferring part for transferring the substrate to the cleaning part before polishing the substrate in the polishing part. The substrate may be preparatorily cleaned in the cleaning part before the polishing process, and then enters the polishing part.

公开(公告)号：US20170320188A1

公开(公告)日：2017-11-09

申请号：US15373703

申请日：2016-12-09

Applicant: K.C.Tech Co., Ltd.

Inventor： Young Kyu Kweon ,  Byoung Chaul Son ,  Moon Gi Cho ,  Joon Ho An

IPC: B24B37/20 ,  H01L21/67 ,  H01L21/02 ,  B08B3/02 ,  B08B3/12 ,  B08B3/08 ,  H01L21/306

Abstract: A substrate processing system comprising a polishing part, a pre-cleaning region, and a cleaning part. The polishing part performs a Chemical Mechanical Polishing (CMP) process on a substrate. The pre-cleaning region is prepared in the polishing part and allows pre-cleaning performed on the substrate having undergone the polishing process. The cleaning part cleans the substrate pre-cleaned in the pre-cleaning region.

公开(公告)号：US10518382B2

公开(公告)日：2019-12-31

申请号：US15373703

申请日：2016-12-09

Applicant: K.C.Tech Co., Ltd.

Inventor： Young Kyu Kweon ,  Byoung Chaul Son ,  Moon Gi Cho ,  Joon Ho An

IPC: B24B37/20 ,  B08B3/02 ,  B08B3/08 ,  B08B3/12 ,  H01L21/02 ,  H01L21/306 ,  H01L21/67

Abstract: A substrate processing system comprising a polishing part, a pre-cleaning region, and a cleaning part. The polishing part performs a Chemical Mechanical Polishing (CMP) process on a substrate. The pre-cleaning region is prepared in the polishing part and allows pre-cleaning performed on the substrate having undergone the polishing process. The cleaning part cleans the substrate pre-cleaned in the pre-cleaning region.

公开(公告)号：US20170183537A1

公开(公告)日：2017-06-29

申请号：US15325095

申请日：2015-08-11

Applicant: K.C.TECH CO., LTD ,  IUCF-HYU(INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)

Inventor： Joo Hyoung YOON ,  Seung Chul HONG ,  Young HO YOON ,  UnGyu PAIK ,  Ji Hoon SEO ,  Ki Jung KIM ,  Kang Cheon LEE

IPC: C09G1/02 ,  H01L21/28 ,  H01L21/321 ,  C09K3/14

CPC classification number: C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/28079 ,  H01L21/3212 ,  H01L29/66545

Abstract: The present invention relates to a polishing slurry composition. A polishing slurry composition according to a first aspect of the present invention comprises abrasive particles and an oxidant, polishes tungsten having a thickness of 10-1,000 Å, and improves the topography of tungsten. Additionally, the polishing slurry composition according to a second aspect of the present invention comprises: at least two abrasive particles among first abrasive particles, second abrasive particles and third abrasive particles; and an oxidant, wherein the primary particle size of the first abrasive particles is 20 nm or more and less than 45 nm, the primary particle size of the second abrasive particles is 45 nm or more and less than 130 nm, and the primary particle size of the third abrasive particles is 130 nm or more and less than 250 nm.

公开(公告)号：US20180362806A1

公开(公告)日：2018-12-20

申请号：US15822117

申请日：2017-11-25

Applicant: Samsung Electronics Co., Ltd. ,  K.C.TECH CO., LTD

Inventor： Seung Ho PARK ,  Chang Gil Kwon ,  Sung Pyo LEE ,  Jun Ha HWANG ,  Sang Kyun KIM ,  Hye Sung PARK ,  Su Young SHIN ,  Woo In LEE ,  Yang Hee LEE ,  Jong Hyuk PARK ,  Il Young YOON

IPC: C09G1/02 ,  H01L21/3105

Abstract: Provided are a chemical mechanical polishing (CMP) slurry composition and a method of fabricating a semiconductor device using the same. The chemical mechanical polishing (CMP) slurry composition includes abrasive particles, a first cationic compound which comprises at least any one of an amino acid, a polyalkylene glycol, a polymer polysaccharide to which a glucosamine compound is bonded, and a polymer containing an amine group, a second cationic compound which comprises an organic acid, and a nonionic compound which comprises polyetheramine.

公开(公告)号：US20170183539A1

公开(公告)日：2017-06-29

申请号：US15386502

申请日：2016-12-21

Applicant: K.C.Tech Co., Ltd.

Inventor： Jang Kuk KWON ,  Sung Pyo LEE ,  Chang Gil KWON ,  Jun Ha HWANG

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/306

Abstract: An abrasive particle-dispersion layer composite and a polishing slurry composition including the abrasive particle-dispersion layer composite are provided. The abrasive particle-dispersion layer composite includes abrasive particles, a first dispersant that is at least one cationic compound among an amino acid, an organic acid, polyalkylene glycol and a high-molecular polysaccharide coupled to a glucosamine compound, and a second dispersant that is a cationic polymer including at least two ionized cations in a molecular formula.

公开(公告)号：US20170183538A1

公开(公告)日：2017-06-29

申请号：US15379861

申请日：2016-12-15

Applicant: K.C.Tech Co., Ltd.

Inventor： Jang Kuk KWON ,  Sung Pyo LEE ,  Chang Gil KWON ,  Jun Ha HWANG

IPC: C09G1/02 ,  H01L21/3105 ,  C09G1/04

CPC classification number: C09G1/02 ,  H01L21/31053

Abstract: An additive composition and a positive polishing slurry composition including the additive composition are provided. The additive composition includes a cationic compound, an organic acid, a nonionic compound, and a pH adjuster.