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    Floating recovery device for underwater equipment
    1.
    发明授权
    Floating recovery device for underwater equipment 有权

    公开(公告)号：US10029771B2

    公开(公告)日：2018-07-24

    申请号：US15458291

    申请日：2017-03-14

    Applicant: Ki Joon Kim

    Inventor： Ki Joon Kim

    IPC: B63B22/12 ,  B63C7/26

    Abstract: Disclosed herein is a floating recovery device for underwater equipment. The device includes a recovery body partitioned into a first compartment, a second compartment, and a third compartment by a partition wall, first and second pressure tanks installed in the first and second compartments, respectively, first and second striking parts fastened to the first and second pressure tanks, respectively, to strike the first and second pressure tanks, first and second actuators wirelessly actuating the first and second striking parts, respectively, and a buoyancy generator installed in the third compartment, and inflated by high-pressure gas introduced from the first and second pressure tanks, thus generating buoyancy. Such a configuration allows the pressure tank to be wirelessly struck for the purpose of supplying high-pressure gas to the buoyancy generator and floating the underwater equipment in the event of the loss of the underwater equipment.

    Nonvolatile memory devices and methods of fabricating the same
    2.
    发明授权
    Nonvolatile memory devices and methods of fabricating the same 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US09087871B2

    公开(公告)日：2015-07-21

    申请号：US13946307

    申请日：2013-07-19

    Applicant: Kil-Ho Lee ,  Ki-Joon Kim ,  Se-Woong Park

    Inventor： Kil-Ho Lee ,  Ki-Joon Kim ,  Se-Woong Park

    IPC: H01L21/311 ,  H01L21/762 ,  H01L21/768 ,  H01L27/22 ,  H01L43/08

    CPC classification number: H01L21/76224 ,  H01L21/76805 ,  H01L21/76808 ,  H01L21/76831 ,  H01L21/76832 ,  H01L27/228 ,  H01L43/08

    Abstract: Nonvolatile memory devices and methods of fabricating the same, include, forming a transistor in a first region of a substrate, forming a contact which is connected to the transistor, forming an information storage portion, which is disposed two-dimensionally, in a second region of the substrate, sequentially forming a stop film and an interlayer insulating film which cover the contact and the information storage portion, forming a first trench, which exposes the stop film, on the contact, and forming a second trench which extends through the stop film to expose the contact, wherein a bottom surface of the first trench is lower than a bottom surface of the information storage portion.

    Abstract translation: 非易失性存储器件及其制造方法包括：在衬底的第一区域中形成晶体管，形成连接到晶体管的触点，形成二维地设置在第二区域中的信息存储部分 的基板，顺序地形成覆盖接触的信息存储部分的停止膜和层间绝缘膜，形成在接触件上露出停止膜的第一沟槽，并形成延伸穿过停止膜的第二沟槽 暴露触点，其中第一沟槽的底表面低于信息存储部分的底面。

    NONVOLATILE MEMORY DEVICES AND METHODS OF FABRICATING THE SAME
    3.
    发明申请
    NONVOLATILE MEMORY DEVICES AND METHODS OF FABRICATING THE SAME 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US20140038385A1

    公开(公告)日：2014-02-06

    申请号：US13946307

    申请日：2013-07-19

    Applicant: Kil-Ho LEE ,  Ki-Joon KIM ,  Se-Woong PARK

    Inventor： Kil-Ho LEE ,  Ki-Joon KIM ,  Se-Woong PARK

    IPC: H01L21/762

    CPC classification number: H01L21/76224 ,  H01L21/76805 ,  H01L21/76808 ,  H01L21/76831 ,  H01L21/76832 ,  H01L27/228 ,  H01L43/08

    Abstract: Nonvolatile memory devices and methods of fabricating the same, include, forming a transistor in a first region of a substrate, forming a contact which is connected to the transistor, forming an information storage portion, which is disposed two-dimensionally, in a second region of the substrate, sequentially forming a stop film and an interlayer insulating film which cover the contact and the information storage portion, forming a first trench, which exposes the stop film, on the contact, and forming a second trench which extends through the stop film to expose the contact, wherein a bottom surface of the first trench is lower than a bottom surface of the information storage portion.

    Abstract translation: 非易失性存储器件及其制造方法包括：在衬底的第一区域中形成晶体管，形成连接到晶体管的触点，形成二维地设置在第二区域中的信息存储部分 的基板，顺序地形成覆盖接触的信息存储部分的停止膜和层间绝缘膜，形成在接触件上露出停止膜的第一沟槽，并形成延伸穿过停止膜的第二沟槽 暴露触点，其中第一沟槽的底表面低于信息存储部分的底面。

    Source driver capable of controlling source line driving signals in a liquid crystal display device
    4.
    发明授权
    Source driver capable of controlling source line driving signals in a liquid crystal display device 有权

    公开(公告)号：US08537093B2

    公开(公告)日：2013-09-17

    申请号：US12541236

    申请日：2009-08-14

    Applicant: Ki-Joon Kim

    Inventor： Ki-Joon Kim

    IPC: G09G3/36

    CPC classification number: G09G3/3688 ,  G09G2310/0291 ,  G09G2310/08

    Abstract: There is provided a source driver capable of controlling the timing of source line driving signals in a liquid crystal display device. The source driver includes a plurality of output circuits, each output circuit including an output buffer and a switch. The output buffer amplifies an analog image signal, and the switch outputs the amplified analog image signal as a source line driving signal in response to a control signal. The source driver further comprises a control circuit for generating the control signal, the control circuit comprising: a delay circuit delaying a switch signal and generating a delayed switch signal; and a multiplexer selecting one of the switch signal and the delayed switch signal in response to a selection signal and outputting the selected signal as the control signal.

    MAGNETIC DEVICE
    5.
    发明申请
    MAGNETIC DEVICE 有权
    磁性装置

    公开(公告)号：US20130234267A1

    公开(公告)日：2013-09-12

    申请号：US13682737

    申请日：2012-11-21

    Applicant: Ki-joon Kim ,  Hyung-joon Kwon

    Inventor： Ki-joon Kim ,  Hyung-joon Kwon

    IPC: H01L29/82

    CPC classification number: H01L29/82 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    Abstract: A magnetic body structure including: a magnetic layer pattern; and a conductive pattern including a metallic glass alloy and covering at least a portion of the magnetic body structure.

    Abstract translation: 一种磁体结构，包括：磁性层图案; 以及包括金属玻璃合金并覆盖至少一部分磁体结构的导电图案。

    Magnetic memory devices
    6.
    发明授权
    Magnetic memory devices 有权
    磁存储器件

    公开(公告)号：US08405077B2

    公开(公告)日：2013-03-26

    申请号：US13070890

    申请日：2011-03-24

    Applicant: Ki Joon Kim

    Inventor： Ki Joon Kim

    IPC: H01L29/10

    CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3263 ,  H01F41/307 ,  H01L43/10

    Abstract: Provided is a magnetic memory device and a method of forming the same. A first magnetic conductive layer is disposed on a substrate. A first tunnel barrier layer including a first metallic element and a first non-metallic element is disposed on the first magnetic conductive layer. A second magnetic conductive layer is disposed on the first tunnel barrier layer. A content of an isotope of the first metallic element having a non-zero nuclear spin quantum number is lower than a natural state.

    Abstract translation: 提供一种磁存储器件及其形成方法。 第一导电层设置在基板上。 包括第一金属元件和第一非金属元件的第一隧道势垒层设置在第一导电层上。 第二导电层设置在第一隧道势垒层上。 具有非零核自旋量子数的第一金属元素的同位素含量低于自然状态。

    Method of bonding probes and method of manufacturing a probe card using the same
    8.
    发明授权
    Method of bonding probes and method of manufacturing a probe card using the same 有权
    探针接合方法及其制造方法

    公开(公告)号：US07886957B2

    公开(公告)日：2011-02-15

    申请号：US12097839

    申请日：2007-03-19

    Applicant: Ki-Joon Kim ,  Yong-Hwi Jo

    Inventor： Ki-Joon Kim ,  Yong-Hwi Jo

    IPC: B23K31/02

    CPC classification number: H05K3/3452 ,  G01R1/06727 ,  G01R3/00 ,  H05K3/341 ,  H05K3/4015 ,  H05K2201/2081 ,  H05K2203/0315

    Abstract: In a method of manufacturing bonding probes, bump layer patterns are formed on terminals of a multi-layered substrate. A first wetting layer pattern having a wettability with respect to a solder paste, and a non-wetting layer pattern having a non-wettability with respect to the solder paste are formed on the bump layer patterns. The solder paste is formed on the first wetting layer and the non-wetting layer pattern. The probes, which make contact with an object, are bonded to the solder paste. The solder paste on the non-wetting layer pattern reflows along a surface of the first wetting layer pattern to form an adhesive layer on the first wetting layer pattern. Thus, a sufficient amount of the solder paste, which is required for bonding the probes, may be provided to firmly bond the probes.

    Abstract translation: 在制造接合探针的方法中，在多层基板的端子上形成凸起层图案。 在凸块层图案上形成有相对于焊膏具有润湿性的第一润湿层图案和相对于焊膏具有不润湿性的非润湿层图案。 焊膏形成在第一润湿层和非润湿层图案上。 与物体接触的探针与焊膏接合。 非润湿层图案上的焊膏沿着第一润湿层图案的表面回流以在第一润湿层图案上形成粘合剂层。 因此，可以提供足够量的用于粘合探针所需的焊膏，以牢固地结合探针。

    Source driver output circuit of thin film transistor liquid crystal display
    9.
    发明授权
    Source driver output circuit of thin film transistor liquid crystal display 有权
    源驱动器输出电路薄膜晶体管液晶显示

    公开(公告)号：US07821485B2

    公开(公告)日：2010-10-26

    申请号：US11245279

    申请日：2005-10-06

    Applicant: Ki-joon Kim

    Inventor： Ki-joon Kim

    IPC: G09G3/36

    CPC classification number: G09G3/3688 ,  G09G2310/0248 ,  G09G2330/023

    Abstract: A source driver output circuit of a thin film transistor (TFT) liquid crystal display (LCD) includes first through n-th voltage generators, first through n-th switching portions, first through n-th sub switching portions, and a switching circuit. The voltage generators receive first through n-th corresponding input voltages and generate first through n-th sub input voltages. The switching portions generate the sub input voltages as first through n-th corresponding output voltages when activated, or cut off the sub input voltages when deactivated. The sub switching portions connect predetermined share lines to the output voltages when activated, or cut off the predetermined share lines when deactivated. The switching circuit maintains each of the share line voltages equally at an intermediate voltage level that is between the share line voltages. Therefore, the slew rate of a signal input to the panel from the source driver can be improved, and current consumption in the source driver can be reduced.

    Abstract translation: 薄膜晶体管（TFT）液晶显示器（LCD）的源极驱动器输出电路包括第一至第n电压发生器，第一至第n开关部分，第一至第N子切换部分和开关电路。 电压发生器接收第一至第n对应的输入电压，并产生第一至第n子输入电压。 开关部分在激活时产生作为第一至第n对应的输出电压的子输入电压，或者在去激活时切断子输入电压。 子开关部分在激活时将预定的共享线路连接到输出电压，或者在停用时切断预定共享线路。 开关电路将共享线路电压中的每一个均等于在共享线路电压之间的中间电压电平。 因此，可以提高从源极驱动器输入到面板的信号的转换速率，并且可以减少源极驱动器中的电流消耗。

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