公开(公告)号：US4265682A

公开(公告)日：1981-05-05

申请号：US974506

申请日：1978-12-29

Applicant: Noboru Tsuya ,  Kenichi Arai

Inventor： Noboru Tsuya ,  Kenichi Arai

IPC: B22D11/06 ,  C21D6/00 ,  C22C38/02 ,  H01F1/153 ,  H01F1/04

CPC classification number: H01F1/15341 ,  B22D11/06 ,  C21D6/008 ,  C22C38/02

Abstract: A high silicon steel strip having excellent magnetic properties and good workability, and having a composition consisting of 4-10% by weight of silicon and the remainder being substantially iron and incidental impurities is produced by cooling super rapidly the high silicon steel melt on a cooling substrate to form a thin strip having micro-structure comprising very fine crystal grains having substantially no ordered lattice.

Abstract translation: 具有优异的磁性能和良好的加工性的高硅钢带，其组成由4-10重量％的硅组成，其余部分基本上是铁和附带的杂质，通过冷却来快速冷却高硅钢熔体 衬底以形成具有微结构的薄带，其包括基本上没有有序晶格的非常细的晶粒。

公开(公告)号：US5209837A

公开(公告)日：1993-05-11

申请号：US735945

申请日：1991-07-25

Applicant: Noboru Tsuya ,  Tadao Tokushima ,  Toshiro Takahashi

Inventor： Noboru Tsuya ,  Tadao Tokushima ,  Toshiro Takahashi

IPC: G11B5/73 ,  G11B5/84

CPC classification number: G11B5/84 ,  G11B5/73

Abstract: This invention relates to a process for preparing a magnetic disk, which comprises (a) subjecting a substrate having an anodized aluminum film to mirror surface-finishing, (b) widening pores of the anodized aluminum film by chemical dissolution treatment so that the total area of pores becomes from 20 to 80% of the entire surface area, thereby retaining crystalline alumina of the anodized aluminum film extruded after the chemical dissolution treatment, and (c) coating the resultant substrate with a magnetic continuous thin film.

Abstract translation: 本发明涉及一种制备磁盘的方法，该方法包括：（a）对具有阳极氧化铝膜的基板进行镜面整理，（b）通过化学溶解处理使阳极氧化铝膜的孔扩大，使得总面积 的孔变成整个表面积的20至80％，从而保持化学溶解处理后挤出的阳极化铝膜的结晶氧化铝，（c）用磁性连续薄膜涂覆所得基材。

公开(公告)号：US5047274A

公开(公告)日：1991-09-10

申请号：US218202

申请日：1988-07-13

Applicant: Noboru Tsuya ,  Tadao Tokushima ,  Toshiro Takahashi

Inventor： Noboru Tsuya ,  Tadao Tokushima ,  Toshiro Takahashi

IPC: G11B5/73 ,  G11B5/84

CPC classification number: G11B5/84 ,  G11B5/7315 ,  Y10S428/90

Abstract: A substrate for a magnetic recording disk, made of anodized aluminum having its pores packed with a non magnetic material and having been subjected to polishing followed by an etching treatment to form a finely roughened surface due to preferential etching of either the aluminum or the non magnetic material.

公开(公告)号：US4682206A

公开(公告)日：1987-07-21

申请号：US721675

申请日：1985-04-10

Applicant: Noboru Tsuya ,  Kenichi Arai

Inventor： Noboru Tsuya ,  Kenichi Arai

IPC: C30B11/00 ,  C30B15/06 ,  C30B29/64 ,  H01L29/04 ,  H01L31/0368 ,  H01L31/18

CPC classification number: H01L31/182 ,  C30B11/00 ,  C30B11/001 ,  C30B11/002 ,  C30B11/007 ,  C30B15/06 ,  C30B29/605 ,  H01L29/04 ,  H01L31/03682 ,  Y02E10/546 ,  Y02P70/521 ,  Y10S117/914 ,  Y10S428/939 ,  Y10T428/12528

Abstract: A novel thin ribbon of semiconductor has a polycrystalline structure composed more than 50% of grains having a grain size of more than 5 .mu.m, a thickness of 5 to 200 .mu.m, a sufficient flexibility to be windable on a pipe having a diameter of 34 mm, and malleability. The semiconductor is composed of p-type, i-type or n-type semiconductor material, and may be a two-layer composite formed of at least two elements so as to form a p-n type junction. The composition of the semiconductor material consists of pure silicon or silicon with an additional impurity element for improving the properties of the semiconductor, the additional impurity element being selected from the group consisting of hydrogen, phosphorus, sulfur, oxygen, boron, arsenic, tellurium, tin, selenium, aluminum, gallium, indium, chromium, silver, iron and bismuth. A method of manufacturing a thin ribbon of a two-layer composite of semiconductor material is also disclosed. The flexible thin ribbon of semiconductor is available for use as/or in a semiconductor electronic device.

Abstract translation: 一种新颖的半导体薄带具有多晶结构，该多晶结构由超过50％的晶粒尺寸大于5μm，厚度为5至200μm的晶粒构成，具有足够的挠曲性可在具有直径为 34毫米，延展性。 半导体由p型，i型或n型半导体材料构成，并且可以是由至少两个元素形成的两层复合材料，以便形成p-n型结。 半导体材料的组成由具有用于改善半导体性质的附加杂质元素的纯硅或硅组成，附加的杂质元素选自氢，磷，硫，氧，硼，砷，碲， 锡，硒，铝，镓，铟，铬，银，铁和铋。 还公开了制造半导体材料的双层复合材料的薄带的方法。 半导体的柔性薄带可用于/或用于半导体电子器件。

公开(公告)号：US4363769A

公开(公告)日：1982-12-14

申请号：US225242

申请日：1981-01-15

Applicant: Noboru Tsuya ,  Kenichi Arai

Inventor： Noboru Tsuya ,  Kenichi Arai

IPC: B22D11/06 ,  C22C1/00 ,  C30B11/00 ,  C30B11/14 ,  C30B15/06 ,  C30B29/64 ,  H01L21/208 ,  H01L31/04 ,  H01L31/18 ,  B29D7/02

CPC classification number: C30B11/001 ,  B22D11/0611 ,  C22C1/007 ,  C30B11/14 ,  H01L31/18

Abstract: A method for manufacturing a thin and flexible ribbon wafer of semiconductor material such as germanium, silicon, selenium, tellurium, PbS, InSb, ZnTe, PbSe, InAs, InP, GaSb, PbTe, ZnS, Bi.sub.2 Te.sub.3, and mixtures thereof comprises melting the semiconductor material at a temperature within the range from a melting point thereof to 300.degree. C. above the melting point to form a uniform melt; ejecting under a pressure the melt through a nozzle against a cooling surface of a moving substrate to cool very rapidly a jet flow of the melt at a cooling rate of 1,000.degree. C. to 1,000,000.degree. C./sec to form the ribbon type thin and flexible wafer of fine and compact microscopic structure having a large mechanical strength and an excellent electrical property. It is possible to add to the melt various additives as fluxes or impurities such as B, P, BP, Sb Sn, As, B, P, Sb, In, Al and alloys intermetallic compounds, and conjugates thereof. The thin ribbon wafer as grown is preferably heated at a temperature from within the range 500.degree. C. to the melting point for a time within the range from 0.1 second to one week. The invention also provides a thin and flexible ribbon wafer of semiconductor material manufactured by the above mentioned process.

Abstract translation: 用于制造诸如锗，硅，硒，碲，PbS，InSb，ZnTe，PbSe，InAs，InP，GaSb，PbTe，ZnS，Bi2Te3及其混合物的半导体材料的薄而柔性的带状晶片的方法包括将半导体 材料在熔点以上的熔点至300℃的范围内，形成均匀的熔体; 在压力下通过喷嘴将熔体喷射抵靠移动的基板的冷却表面，以1000℃至1,000,000℃/秒的冷却速度非常快速地冷却熔体的喷射流，以形成薄带型和 具有大的机械强度和优异的电性能的精细且紧凑的微观结构的柔性晶片。 可以将诸如B，P，BP，SbSn，As，B，P，Sb，In，Al和合金金属间化合物及其共轭物的助熔剂或杂质作为助熔剂或杂质添加到熔体中。 生长的薄带晶片优选在从500℃到550℃的温度范围内加热0.1秒至1周的时间。 本发明还提供了通过上述方法制造的薄而柔性的半导体材料带状晶片。

公开(公告)号：US4339508A

公开(公告)日：1982-07-13

申请号：US170684

申请日：1980-07-21

Applicant: Noboru Tsuya ,  Kenichi Arai

Inventor： Noboru Tsuya ,  Kenichi Arai

IPC: H01F6/06 ,  B22D11/00 ,  H01B12/04 ,  H01B13/00 ,  H01L39/06 ,  H01L39/12 ,  H01L39/24 ,  B21C37/00 ,  B22D11/06 ,  B22D11/10

CPC classification number: B22D11/005 ,  H01L39/2403 ,  Y10S400/901 ,  Y10S428/93 ,  Y10S505/805 ,  Y10S505/806 ,  Y10S505/813 ,  Y10S505/822 ,  Y10T29/49014 ,  Y10T428/12431 ,  Y10T428/12465 ,  Y10T428/265 ,  Y10T428/268

Abstract: A method for manufacturing a thin and flexible ribbon of superconductor material such as V.sub.3 Sn, V.sub.3 Ge, V.sub.3 Si, Nb.sub.3 Sn, Nb.sub.3 Ge, Nb.sub.3 Si and La-Au having a fine and compact microscopic structure comprises heating raw superconductor material at a temperature within the range between its melting point and 300.degree. C. above the melting point to form a melt having suitable wettability and viscosity; ejecting the melt through a nozzle under a pressure within the range from 0.01 to 1.5 atm. against a cooling surface of a moving substrate such as a rotating drum; and cooling instantaneously and very rapidly a jet flow of the melt on the cooling surface at a cooling rate of 1,000.degree. C. to 1,000,000.degree. C./sec. In order to manufacture the thin elongated ribbon of excellent configuration it is preferable to effect the cooling in a reduced atmosphere. The invention also provides the thin and flexible ribbon processed by the above mentioned process. When an intermetallic compound such as Nb-Si, Nb-Sn, Nb-Ge, V-Si, V-Sn and V-Ge is used as the raw superconductor material a thin and flexible ribbon of superconductor material having essentially a crystalline structure is formed. When La.sub.1-x (Au.sub.y Cu.sub.1-y).sub.x, wherein x>0.9, 0.ltoreq.y.ltoreq.1 is used as the raw superconductor material it is possible to obtain a thin and flexible ribbon of superconductor material having essentially a fine and compact crystalline structure mixed with amorphous of 10 to 90%.

Abstract translation: 用于制造具有精细且致密的微观结构的诸如V3Sn，V3Ge，V3Si，Nb3Sn，Nb3Ge，Nb3Si和La-Au的超导材料的薄且柔性带的方法包括在其熔化之间的温度范围内加热原料超导体材料 点和熔点以上300℃，形成具有合适润湿性和粘度的熔体; 在0.01至1.5atm范围内的压力下通过喷嘴喷射熔体。 抵靠诸如旋转鼓的移动基板的冷却表面; 并以1000℃至1,000,000℃/秒的冷却速度瞬时和非常快速地冷却熔体在冷却表面上的喷射流。 为了制造优良结构的细长带，优选在减少的气氛中进行冷却。 本发明还提供了通过上述方法处理的薄而柔性的带状物。 当使用诸如Nb-Si，Nb-Sn，Nb-Ge，V-Si，V-Sn和V-Ge的金属间化合物作为原始超导体材料时，具有基本上具有晶体结构的薄而柔性的超导体材料带是 形成。 当使用La1-x（AuyCu1-y）x，其中x> 0.9,0

公开(公告)号：US4264882A

公开(公告)日：1981-04-28

申请号：US776754

申请日：1977-03-11

Applicant: Noboru Tsuya ,  Kenichi Arai ,  Hiroshi Shimizu ,  Tsuyoshi Masumoto

Inventor： Noboru Tsuya ,  Kenichi Arai ,  Hiroshi Shimizu ,  Tsuyoshi Masumoto

IPC: G10K15/04 ,  H01L41/12 ,  H03H9/30 ,  H03H9/38 ,  H04B11/00 ,  H01L41/20 ,  H04R15/00

CPC classification number: H04B11/00

Abstract: An electric signal transmission transducer employing a ferromagnetic amorphous ribbon and especially an electric signal transmission element and system and an electroacoustic signal conversion system using a ferromagnetic amorphous ribbon. The transmission transducer also provides for applying a magnetic field to the ferromagnetic amorphous ribbon for controlling the electric signal transmission or delay time. Also shown are the electric and magnetic characteristics of ferromagnetic amorphous ribbons after various heat treatments in various magnetic fields.

Abstract translation: 一种使用铁磁性非晶带的电信号传输换能器，特别是使用铁磁性非晶带的电信号传输元件和系统以及电声信号转换系统。 传输换能器还提供了向铁磁性非晶带施加磁场以控制电信号传输或延迟时间。 还示出了在各种磁场中各种热处理之后的铁磁性非晶带的电和磁特性。

公开(公告)号：US4257830A

公开(公告)日：1981-03-24

申请号：US974504

申请日：1978-12-29

Applicant: Noboru Tsuya ,  Kenichi Arai

Inventor： Noboru Tsuya ,  Kenichi Arai

IPC: B22D11/06 ,  C21D6/00 ,  C22C45/02 ,  H01F1/153 ,  H01F3/04 ,  H01F1/04

CPC classification number: C22C45/02 ,  B22D11/06 ,  C21D6/008 ,  H01F1/15341 ,  H01F3/04

Abstract: A method of manufacturing a thin ribbon of magnetic material having a high permeability and excellent flexibility and workability comprising the combination of steps ofmelting a magnetic material consisting of essentially of by weight 4-7% of aluminum, 8-11% of silicon and the remainder substantially iron and inevitable impurities at a temperature of between a melting point and a temperature not exceeding 300.degree. C. from the melting point, and necessary subingredient of less than 7%,ejecting thus obtained melt under a pressure of 0.01-1.5 atm. through a nozzle onto a moving or rotating cooling substrate,cooling super-rapidly the melt on the rotating surface of said cooling substrate at a cooling rate of 10.sup.3 -10.sup.6 .degree. C./sec so as to have a high initial permeability of more than 10.sup.4, a low coercive force of less than 0.10 Oe and an excellent flexibility,forming a thin ribbon having a compact and fine grain size structure substantially without existing of the ordered lattice, andannealing thus obtained thin ribbon at a temperature of between 600.degree. to 1,000.degree. C. for 1 minute to 5 hours, more preferably 1 to 100 minutes so as to obtain a columnar crystal structure by promoting the growth of crystal grain size.

Abstract translation: 一种制造具有高磁导率和优异的柔性和可加工性的磁性材料薄带的方法，包括以下步骤的组合的步骤的组合：将基本上由4-7％的铝，8-11％的硅组成的磁性材料和 在熔点和温度不超过300℃的温度下，在0.01-1.5大气压的压力下将剩余量基本上为铁和不可避免的杂质，并且必需的小于7％，从而排出如此获得的熔体。 通过喷嘴到移动或旋转的冷却基板上，以103-106℃/秒的冷却速度将冷却物超快速地冷却在所述冷却基板的旋转表面上，以便具有大于104的高初始磁导率 ，小于0.10Oe的低矫顽力和优异的柔软性，形成基本上不存在有序晶格的具有致密和细晶粒度结构的薄带，并且在600至1,000℃的温度下退火所得薄带 1分钟至5小时，更优选1至100分钟，从而通过促进晶粒尺寸的生长获得柱状晶体结构。

公开(公告)号：US4244722A

公开(公告)日：1981-01-13

申请号：US967434

申请日：1978-12-07

Applicant: Noboru Tsuya ,  Kenichi Arai

Inventor： Noboru Tsuya ,  Kenichi Arai

IPC: C03B17/06 ,  C03B32/02 ,  C03C3/00 ,  C03C3/089 ,  C03C3/12 ,  C03C3/16 ,  C03C3/23 ,  C03C3/32 ,  H01B3/08 ,  H01G4/08 ,  H01L41/22 ,  C03B19/02 ,  C03B32/00

CPC classification number: C03B17/06 ,  C03B32/02 ,  C03C3/00 ,  C03C3/089 ,  C03C3/12 ,  C03C3/16 ,  C03C3/23 ,  C03C3/32 ,  C03C3/325 ,  H01B3/087 ,  H01B3/088 ,  H01G4/08 ,  H01L41/187 ,  H01L41/314 ,  Y10S65/15

Abstract: A method for manufacturing a thin and flexible ribbon of dielectric material comprisesheating a raw material mainly consisting of dielectric material which can form a crystalline structure in a solid state and of a glass former which is included by 0 to 50 atomic percentages at a temperature above a melting point of the raw material to form a one phase melt;ejecting the melt thus formed through a nozzle against a cooling surface of a rotating disc, drum or belt, the ejection being carried out under a pressure of 0.01 to 1.5 atm. to form a continuous jet flow of the melt; andcooling instantaneously and rapidly the jet flow of the melt while it is in contact with the cooling surface at a cooling rate of 1,000 to 1,000,000.degree. C./sec so as to form a thin and flexible ribbon of the dielectric material which contains the amorphous state more than 50% in an area ratio. The dielectric constant and breakdown voltage of the ribbon thus formed are very high. Further the mechanical property of the ribbon is also superior to that of known plate or chip of dielectric material. The dielectric constant and the breakdown voltage can be improved by heating the ribbon as grown at a temperature within 300.degree. to 1,100.degree. C.

Abstract translation: 用于制造薄而柔性的电介质材料带的方法包括加热主要由可形成固态晶体结构的电介质材料的原料和在上述温度下包含0至50原子百分比的玻璃成型体 原料的熔点以形成一相熔体; 将通过喷嘴形成的熔体喷射抵靠旋转的盘，滚筒或带的冷却表面，喷射在0.01至1.5atm的压力下进行。 以形成熔体的连续射流; 并且在1000〜1,000,000℃/秒的冷却速度与冷却面接触的同时瞬间冷却熔融物的喷射流，以形成包含非晶态的介电材料的薄而柔性的带状物 以面积比例超过50％。 如此形成的带的介电常数和击穿电压非常高。 此外，带的机械性能也优于已知的电介质材料的板或芯片。 介电常数和击穿电压可以通过在300〜1100℃的温度范围内加热而提高。

公开(公告)号：US5074971A

公开(公告)日：1991-12-24

申请号：US483895

申请日：1990-02-23

Applicant: Noboru Tsuya ,  Tadao Tokushima ,  Toshiro Takahashi

Inventor： Noboru Tsuya ,  Tadao Tokushima ,  Toshiro Takahashi

IPC: G11B5/82 ,  G11B5/64 ,  G11B5/73 ,  G11B5/84 ,  C25D11/20 ,  B05D5/02 ,  B05D5/08

CPC classification number: G11B5/84 ,  G11B5/7315

Abstract: This invention relates to a process for preparing a magnetic disk, which comprises (a) subjecting a substrate having an anodized aluminum film to mirror surface-finishing, (b) widening pores of the anodized aluminum film by chemical dissolution treatment so that the total area of pores becomes from 20 to 80% of the entire surface area, thereby retaining crystalline alumina of the anodized aluminum film extruded after the chemical dissolution treatment, and (c) coating the resultant substrate with a magnetic continuous thin film.