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    Oxidative top electrode deposition process, and microelectronic device structure
    1.
    发明申请
    Oxidative top electrode deposition process, and microelectronic device structure 审中-公开
    氧化顶电极沉积工艺和微电子器件结构

    公开(公告)号：US20060108623A1

    公开(公告)日：2006-05-25

    申请号：US11324692

    申请日：2005-12-31

    申请人： Peter Buskirk ,  Steven Bilodeau ,  Stephen Johnston ,  Daniel Vestyck ,  Michael Russell

    发明人： Peter Buskirk ,  Steven Bilodeau ,  Stephen Johnston ,  Daniel Vestyck ,  Michael Russell

    IPC分类号： H01L29/94

    CPC分类号： H01L27/11502 ,  H01L27/10852 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/60

    摘要： A method of preventing oxygen deficiency in a ferroelectric or high ε film material having a top electrode layer deposited thereon. Process conditions are employed that either enable the top electrode layer to be formed without oxygen abstraction from the ferroelectric or high ε film material in the vicinity and at the top surface thereof, or else provide the ferroelectric or high ε film material in the vicinity and at the top surface thereof with a surplus of oxygen. In the latter case, the deposition formation of the top electrode layer on the ferroelectric or high ε film material depletes the over-stoichiometric excess of the oxygen in the film material, to yield a device structure including an electrode on a film material having a proper stoichiometry, e.g., of PbZrTiO3.

    摘要翻译： 一种防止在其上沉积有顶电极层的铁电或高ε膜材料中的缺氧的方法。 采用这样的工艺条件，即使顶部电极层能够形成，而不会在附近和其顶部表面处从铁电或高ε薄膜材料中抽出氧，或者在邻近和在其顶部提供铁电或高ε薄膜材料 其顶部表面具有多余的氧气。 在后一种情况下，在铁电或高ε薄膜材料上的顶部电极层的沉积形成消耗了薄膜材料中超过化学计量的过量的氧，从而产生一种器件结构，该器件结构包括具有适当的薄膜材料的电极 化学计量，例如PbZrTiO 3 3。

    A-SITE-AND/OR B-SITE-MODIFIED PBZRTIO3 MATERIALS AND (PB, SR, CA, BA, MG) (ZR, TI,NB, TA)O3 FILMS HAVING UTILITY IN FERROELECTRIC RANDOM ACCESS MEMORIES AND HIGH PERFORMANCE THIN FILM MICROACTUATORS
    8.
    发明授权
    A-SITE-AND/OR B-SITE-MODIFIED PBZRTIO3 MATERIALS AND (PB, SR, CA, BA, MG) (ZR, TI,NB, TA)O3 FILMS HAVING UTILITY IN FERROELECTRIC RANDOM ACCESS MEMORIES AND HIGH PERFORMANCE THIN FILM MICROACTUATORS 有权
    A-SITE-AND /或B-SITE修饰的PBZRTIO3材料和（PB，SR，CA，BA，MG）（ZR，TI，NB，TA）O3薄膜在电磁随机存取存储器和高性能薄膜微处理器中的应用

    公开(公告)号：US06692569B2

    公开(公告)日：2004-02-17

    申请号：US09939906

    申请日：2001-08-27

    申请人： Jeffrey F. Roeder ,  Ing-Shin Chen ,  Steven Bilodeau ,  Thomas H. Baum

    发明人： Jeffrey F. Roeder ,  Ing-Shin Chen ,  Steven Bilodeau ,  Thomas H. Baum

    IPC分类号： C30B2504

    CPC分类号： H01L41/187 ,  C30B25/02 ,  C30B29/32

    摘要： A modified PbZrTiO3 perovskite crystal material thin film, wherein the PbZrTiO3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.

    摘要翻译： 一种改性PbZrTiO3钙钛矿晶体材料薄膜，其中所述PbZrTiO3钙钛矿晶体材料包括晶格A位点和B位，其中至少一个通过存在选自以下的取代基进行修饰：（i）A位点 由Sr，Ca，Ba和Mg组成的取代基，（ii）选自Nb和Ta的B位取代基。 钙钛矿晶体薄膜材料可以通过从薄膜的金属组分的金属有机前体的液体输送MOCVD形成，以形成PZT和PSZT等压电和铁电薄膜材料。 本发明的薄膜在非挥发性铁电存储器件（NV-FeRAM）中以及在微机电系统（MEMS）中用作传感器和/或致动器元件，例如需要低输入功率电平的高速数字系统致动器。