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20 条记录 (耗时 0.016 秒)

    E-beam inspection structure for leakage analysis
    1.
    发明授权
    E-beam inspection structure for leakage analysis 有权
    用于泄漏分析的电子束检查结构

    公开(公告)号：US07939348B2

    公开(公告)日：2011-05-10

    申请号：US11845787

    申请日：2007-08-28

    申请人： Victor Seng Keong Lim ,  Jeffrey Lam

    发明人： Victor Seng Keong Lim ,  Jeffrey Lam

    IPC分类号： H01L21/66

    CPC分类号： H01L22/34 ,  G01R31/2884 ,  G01R31/307

    摘要： A testing structure, and method of using the testing structure, where the testing structure comprised of at least one of eight test structures that exhibits a discernable defect characteristic upon voltage contrast scanning when it has at least one predetermined structural defect. The eight test structures being: 1) having an Active Area (AA)/P-N junction leakage; 2) having an isolation region to ground; 3) having an AA/P-N junction and isolation region; 4) having a gate dielectric leakage and gate to isolation region to ground; 5) having a gate dielectric leakage through AA/P-N junction to ground leakage; 6) having a gate dielectric to ground and gate/one side isolation region leakage to ground; 7) having an oversized gate dielectric through AA/P-N junction to ground leakage; and 8) having an AA/P-N junction leakage gate dielectric leakage.

    摘要翻译： 测试结构和使用测试结构的方法，其中测试结构由八个测试结构中的至少一个组成，当电压对比度扫描具有至少一个预定的结构缺陷时，其具有可辨别的缺陷特征。 八个测试结构为：1）具有有源面积（AA）/ P-N结泄漏; 2）具有对地的隔离区域; 3）具有AA / P-N结和隔离区; 4）具有栅极电介质泄漏和栅极到隔离区域对地; 5）具有通过AA / P-N结到漏电的栅极电介质泄漏; 6）具有栅极电介质接地和栅极/一侧隔离区域泄漏到地面; 7）具有通过AA / P-N结到接地漏电的超大栅极电介质; 和8）具有AA / P-N结泄漏栅介质泄漏。

    Method to fabricate dish-free copper interconnects
    4.
    发明授权
    Method to fabricate dish-free copper interconnects 失效
    制造无盘铜互连的方法

    公开(公告)号：US06531386B1

    公开(公告)日：2003-03-11

    申请号：US10072107

    申请日：2002-02-08

    申请人： Victor Seng-Keong Lim ,  Simon Chooi ,  Randall Cha

    发明人： Victor Seng-Keong Lim ,  Simon Chooi ,  Randall Cha

    IPC分类号： H01L214763

    CPC分类号： H01L21/76885 ,  H01L21/76852 ,  H01L21/76879

    摘要： A method of fabricating at least one metal interconnect including the following steps. A structure having at least one exposed conductive structure is provided. A non-stick material layer is formed over the structure and the at least one exposed conductive structure. The non-stick material layer having an upper surface. The non-stick material layer is patterned to form a patterned non-stick material layer having at least one trench therethrough exposing at least a portion of the at least one conductive structure. A metal interconnect is formed in contact with the exposed portion of the at least one conductive structure within the at least one trench wherein the non-stick properties of the patterned non-stick material layer prevent accumulation of the metal comprising the metal interconnect upon the patterned upper surface of the patterned non-stick material layer. The at least one metal interconnect having an upper surface. The patterned non-stick material layer is removed. A planarized dielectric layer is formed over the structure exposing the upper surface of the at least one metal interconnect.

    摘要翻译： 一种制造至少一种金属互连的方法，包括以下步骤。 提供具有至少一个暴露的导电结构的结构。 在结构和至少一个暴露的导电结构上形成不粘材料层。 不粘材料层具有上表面。 将不粘材料层图案化以形成图案化的不粘材料层，其具有通过其暴露出至少一部分导电结构的至少一个沟槽。 在所述至少一个沟槽内形成与所述至少一个导电结构的所述暴露部分接触的金属互连，其中所述图案化不粘材料层的不粘性能防止包含所述金属互连的所述金属在图案化 图案化不粘材料层的上表面。 所述至少一个金属互连具有上表面。 去除图案化的不粘材料层。 在暴露至少一个金属互连的上表面的结构之上形成平坦化的介电层。

    Method for fabricating an air gap shallow trench isolation (STI) structure
    5.
    发明授权
    Method for fabricating an air gap shallow trench isolation (STI) structure 失效
    制造气隙浅沟槽隔离（STI）结构的方法

    公开(公告)号：US06406975B1

    公开(公告)日：2002-06-18

    申请号：US09721718

    申请日：2000-11-27

    申请人： Victor Seng Keong Lim ,  Young-Way Teh ,  Ting-Cheong Ang ,  Alex See ,  Yong Kong Siew

    发明人： Victor Seng Keong Lim ,  Young-Way Teh ,  Ting-Cheong Ang ,  Alex See ,  Yong Kong Siew

    IPC分类号： H01L2176

    CPC分类号： H01L21/764 ,  H01L21/76232

    摘要： A method of manufacturing a shallow trench isolation (STI) with an air gap that is formed by decomposing an organic filler material through a cap layer. A pad layer and a barrier layer are formed over the substrate. The pad layer and the barrier layer are patterned to form a trench opening. We form a trench in substrate by etching through the trench opening. A first liner layer is formed on the sidewalls of the trench. A second liner layer over the barrier layer and the first liner layer. A filler material is formed on the second liner layer to fill the trench. In an important step, a cap layer is deposited over the filler material and the second liner layer. The filler material is subjected to a plasma and heated to vaporize the filler material so that the filler material diffuses through the cap layer to form a gap. An insulating layer is deposited over the cap layer. The insulating layer is planarized. The barrier layer is removed.

    摘要翻译： 制造具有气隙的浅沟槽隔离（STI）的方法，该气隙是通过将有机填充材料分解成盖层形成的。 衬底层和阻挡层形成在衬底上。 衬垫层和阻挡层被图案化以形成沟槽开口。 我们通过蚀刻通过沟槽开口在衬底中形成沟槽。 第一衬里层形成在沟槽的侧壁上。 在阻挡层和第一衬里层上的第二衬里层。 在第二衬垫层上形成填充材料以填充沟槽。 在重要的步骤中，覆盖层沉积在填充材料和第二衬里层上。 对填充材料进行等离子体处理并加热以使填充材料汽化，使得填充材料通过盖层扩散以形成间隙。 绝缘层沉积在覆盖层上。 绝缘层被平坦化。 去除阻挡层。

    Method to prevent CU dishing during damascene formation
    6.
    发明授权
    Method to prevent CU dishing during damascene formation 有权
    防止大马士革形成期间CU凹陷的方法

    公开(公告)号：US06376376B1

    公开(公告)日：2002-04-23

    申请号：US09760165

    申请日：2001-01-16

    申请人： Victor Seng Keong Lim ,  Feng Chen ,  Wang Ling Goh

    发明人： Victor Seng Keong Lim ,  Feng Chen ,  Wang Ling Goh

    IPC分类号： H01L2144

    CPC分类号： H01L21/7684

    摘要： A new method of copper damascene metallization utilizing an additional oxide layer between the nitride and the barrier layers to prevent dishing of the copper line after CMP is described. An insulating layer is provided covering semiconductor device structures in and on a semiconductor substrate. A polish stop layer is deposited overlying the insulating layer. An oxide layer is deposited overlying the polish stop layer. An opening is etched through the oxide layer, the polish stop layer, and the insulating layer to one of the semiconductor device structures. A barrier metal layer is deposited over the surface of the oxide layer and within the opening. A copper layer is deposited over the surface of the barrier metal layer. The copper layer and the barrier metal layer not within the opening are polished away wherein the barrier metal layer polishes more slowly than the copper layer whereby dishing of the copper layer occurs. Thereafter, the oxide layer is polished away stopping at the polish stop layer wherein the oxide layer polishes more quickly than the copper layer whereby the dishing of the copper layer is removed and whereby a hump is formed on the copper layer after the oxide layer is completely polished away. The copper layer is overpolished to remove the hump to complete copper damascene metallization in the fabrication of an integrated circuit.

    摘要翻译： 描述了利用在氮化物和阻挡层之间的附加氧化物层的铜镶嵌金属化的新方法，以防止CMP之后的铜线的凹陷。 提供了覆盖半导体衬底中的半导体器件结构的绝缘层。 覆盖在绝缘层上的抛光阻挡层被沉积。 沉积在抛光停止层上的氧化物层。 通过氧化物层，抛光停止层和绝缘层将开口蚀刻到半导体器件结构之一。 在氧化物层的表面和开口内沉积阻挡金属层。 在阻挡金属层的表面上沉积铜层。 铜层和不在开口内的阻挡金属层被抛光，其中阻挡金属层比铜层抛光得更慢，从而发生铜层的凹陷。 此后，在抛光停止层处停止氧化物层，其中氧化物层比铜层更快地抛光，由此去除铜层的凹陷，并且在氧化物层完全在铜层上形成隆起 抛光 在制造集成电路时，铜层被过度抛光以去除凸起以完成铜镶嵌金属化。

    Defect monitoring in semiconductor device fabrication
    7.
    发明授权
    Defect monitoring in semiconductor device fabrication 有权
    半导体器件制造中的缺陷监测

    公开(公告)号：US08339449B2

    公开(公告)日：2012-12-25

    申请号：US12537269

    申请日：2009-08-07

    申请人： Barbara Fong Chin Lim ,  Keng Heng Lai ,  Tanya Yang ,  Victor Seng Keong Lim ,  Fang Hong Gn ,  Liang Choo Hsia

    发明人： Barbara Fong Chin Lim ,  Keng Heng Lai ,  Tanya Yang ,  Victor Seng Keong Lim ,  Fang Hong Gn ,  Liang Choo Hsia

    IPC分类号： H04N7/18

    CPC分类号： G06T7/0006 ,  G01N21/9501 ,  G06T2207/10061 ,  G06T2207/30148

    摘要： A method of forming a device is presented. The method includes providing a substrate containing at least a partially formed device thereon. The device comprises at least one defect site. A pixilated image of the defect site is acquired, and each pixel comprises a grey level value (GLV). Surrounding noises of the defect site is eliminated. A point of the image is identified as the center of the defect. A plurality of iterations to exclude outer edge pixels surrounding the center of the defect image is performed. The defect is categorized as a killer or non-killer defect.

    摘要翻译： 提出了一种形成装置的方法。 该方法包括提供在其上至少包含部分形成的器件的衬底。 该装置包括至少一个缺陷部位。 获取缺陷部位的像素化图像，并且每个像素包括灰度值（GLV）。 消除了缺陷部位的周围噪声。 图像的一个点被识别为缺陷的中心。 执行多个迭代以排除围绕缺陷图像的中心的外边缘像素。 该缺陷被归类为杀伤或非杀伤性缺陷。

    Extended poly buffer STI scheme
    9.
    发明授权
    Extended poly buffer STI scheme 失效

    公开(公告)号：US07060573B2

    公开(公告)日：2006-06-13

    申请号：US09759909

    申请日：2001-01-16

    申请人： Victor Seng Keong Lim ,  Feng Chen ,  Lap Chan ,  Wang Ling Goh

    发明人： Victor Seng Keong Lim ,  Feng Chen ,  Lap Chan ,  Wang Ling Goh

    IPC分类号： H01L21/336

    CPC分类号： H01L21/76232

    摘要： A new method of forming shallow trench isolations has been described. A silicon semiconductor substrate is provided. A silicon nitride layer is deposited overlying the substrate. A polysilicon layer is deposited overlying the silicon nitride layer. An oxidation mask is deposited overlying the polysilicon layer. The oxidation mask, polysilicon layer, silicon nitride layer, and the silicon semiconductor substrate are patterned to form trenches for planned shallow trench isolations. The silicon semiconductor substrate exposed within the trenches is oxidized to form an oxide liner layer within the trenches wherein the oxidation mask prevents oxidation of the polysilicon layer. Thereafter the oxidation mask is removed. A trench oxide layer is deposited overlying the liner oxide layer and filling the trenches. The trench oxide layer and the polysilicon layer are polished down stopping at the silicon nitride layer with a polishing selectivity of oxide to polysilicon to nitride of 4:100:1 wherein dishing is avoided to complete shallow trench isolations in the manufacture of an integrated circuit device.