摘要:
A method for manufacturing a piezoelectric film includes: forming a piezoelectric precursor film including Bi, Fe, Mn, Ba, and Ti; and obtaining a piezoelectric film preferentially oriented with the (110) plane by crystallizing the piezoelectric precursor film.
摘要:
A piezoelectric element includes a first electrode, a piezoelectric film disposed on the first electrode, and a second electrode disposed on the piezoelectric film. The piezoelectric film is composed of piezoelectric material that is lead free and formed by mixing 100(1−x) % of material A having a spontaneous polarization of 0.5 C/m2 or greater at 25° C. and 100 x % of material B having piezoelectric characteristics and a dielectric constant of 1000 or greater at 25° C., wherein (1−x)Tc(A)+x Tc(B)≧300° C., where Tc(A) is the Curie temperature of the material A and Tc(B) is the Curie temperature of the material B.
摘要翻译:压电元件包括第一电极,设置在第一电极上的压电膜和设置在压电膜上的第二电极。 该压电膜由无铅化的压电材料构成,并且通过混合100(1-x)%的在25℃下具有0.5C / m 2以上的自发极化的材料A和100%的具有 压电特性和介电常数在25℃下为1000以上,其中(1-x)Tc(A)+ x Tc(B)≥300℃,其中Tc(A)是材料的居里温度 A和Tc(B)是材料B的居里温度。
摘要:
A piezoelectric element includes a first electrode, a piezoelectric film disposed on the first electrode, and a second electrode disposed on the piezoelectric film. The piezoelectric film is composed of piezoelectric material that is lead free and formed by mixing 100(1−x) % of material A having a spontaneous polarization of 0.5 C/m2 or greater at 25° C. and 100 x % of material B having piezoelectric characteristics and a dielectric constant of 1000 or greater at 25° C., wherein (1−x)Tc(A)+x Tc(B)≧300° C., where Tc(A) is the Curie temperature of the material A and Tc(B) is the Curie temperature of the material B.
摘要翻译:压电元件包括第一电极,设置在第一电极上的压电膜和设置在压电膜上的第二电极。 该压电膜由无铅化的压电材料构成,并且通过混合100(1-x)%的在25℃下具有0.5C / m 2以上的自发极化的材料A和100%的具有 压电特性和介电常数在25℃下为1000以上,其中(1-x)Tc(A)+ x Tc(B)≥300℃,其中Tc(A)是材料的居里温度 A和Tc(B)是材料B的居里温度。
摘要:
A piezoelectric element includes a first electrode, a piezoelectric film disposed on the first electrode, and a second electrode disposed on the piezoelectric film. The piezoelectric film is composed of piezoelectric material that is lead free and formed by mixing 100(1−x)% of material A having a spontaneous polarization of 0.5 C/m2 or greater at 25° C. and 100 x % of material B having piezoelectric characteristics and a dielectric constant of 1000 or greater at 25° C., wherein (1−x)Tc(A)+xTc(B)≧300° C., where Tc(A) is the Curie temperature of the material A and Tc(B) is the Curie temperature of the material B.
摘要翻译:压电元件包括第一电极,设置在第一电极上的压电膜和设置在压电膜上的第二电极。 该压电膜由无铅化的压电材料构成,并且通过混合100(1-x)%的在25℃下具有0.5C / m 2以上的自发极化的材料A和100%的具有 压电特性和在25℃下介电常数为1000以上的介电常数,其中(1-x)Tc(A)+ xTc(B)≥300℃,其中Tc(A)是材料A的居里温度 Tc(B)是材料B的居里温度。
摘要:
There are provided a piezoelectric element comprising a first electrode, a piezoelectric layer and a second electrode, the piezoelectric layer is made of a piezoelectric material that contains a bismuth ferrite and silicon dioxide.
摘要:
A ferroelectric memory includes: a memory cell having a ferroelectric capacitor, wherein, in a read-out operation, a first signal Q1 is given when a first voltage is applied to the ferroelectric capacitor, and a second signal Q2 is given when a second voltage having an identical magnitude as a magnitude of the first voltage in a different polarity is applied to the ferroelectric capacitor, and a judgment is made that the memory cell stores first data when Q1/Q2 is greater than ½, and second data when Q1/Q2 is smaller than ½.
摘要:
A precursor composition including a precursor for forming a ferroelectric, the ferroelectric being shown by a general formula AB1-XCXO3, an element A including at least Pb, an element B including at least one of Zr, Ti, V, W, and Hf, an element C including at least one of Nb and Ta, the precursor including at least the element B and the element C and part of the precursor including an ester bond, the precursor being dissolved or dispersed in an organic solvent, and the organic solvent including at least a first alcohol and a second alcohol having a boiling point and viscosity higher than a boiling point and viscosity of the first alcohol.
摘要:
A piezoelectric element includes a first electrode, a piezoelectric film disposed on the first electrode, and a second electrode disposed on the piezoelectric film. The piezoelectric film is composed of piezoelectric material that is lead free and formed by mixing 100(1−x)% of material A having a spontaneous polarization of 0.5 C/m2 or greater at 25° C. and 100 x % of material B having piezoelectric characteristics and a dielectric constant of 1000 or greater at 25° C., wherein (1−x)Tc(A)+xTc(B)≧300° C., where Tc(A) is the Curie temperature of the material A and Tc(B) is the Curie temperature of the material B.
摘要翻译:压电元件包括第一电极,设置在第一电极上的压电膜和设置在压电膜上的第二电极。 该压电膜由无铅化的压电材料构成,并且通过混合100(1-x)%的在25℃下具有0.5C / m 2以上的自发极化的材料A和100%的具有 压电特性和在25℃下的介电常数为1000以上的介电常数,其中(1-x)Tc(A)+ xTc(B)> = 300℃,其中Tc(A)是材料的居里温度 A和Tc(B)是材料B的居里温度。
摘要:
A ferroelectric capacitor includes: an electrode including a platinum film; a seed layer that is formed above the electrode and is composed of oxide having a perovskite structure expressed by a general formula, A(B1-xCx)O3; and a ferroelectric layer formed above the seed layer, wherein A is composed of at least one of Sr and Ca, B is composed of at least one of Ti, Zr and Hf, C is composed of at least one of Nb and Ta, and X is in a range of 0
摘要翻译:铁电电容器包括:包含铂膜的电极; 形成在电极上方并由具有由通式表示的钙钛矿结构的氧化物组成的晶种层A(B 1-x C x X)O 3 SUB>; 以及形成在种子层上的铁电层,其中A由Sr和Ca中的至少一种构成,B由Ti,Zr和Hf中的至少一种构成,C由Nb和Ta中的至少一种构成,以及 X在0
摘要:
A ferroelectric film is formed by an oxide that is described by a general formula AB1−xNbxO3. An A element includes at least Pb, and a B element includes at least one of Zr, Ti, V, W, Hf and Ta. The ferroelectric film includes Nb within the range of: 0.05≦x
摘要翻译:铁氧体膜由通式AB 1-x N x O 3 O 3所描述的氧化物形成。 A元素至少包含Pb,B元素包括Zr,Ti,V,W,Hf和Ta中的至少一种。 铁电体膜包括在0.05 <= x <1的范围内的Nb。 铁电薄膜可用于1T1C,2T2C和简单矩阵类型的铁电存储器。