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    INTEGRATED OPTICAL SENSOR AND METHOD OF PRODUCING AN INTEGRATED OPTICAL SENSOR
    1.
    发明申请
    INTEGRATED OPTICAL SENSOR AND METHOD OF PRODUCING AN INTEGRATED OPTICAL SENSOR 审中-公开

    公开(公告)号：US20180337291A1

    公开(公告)日：2018-11-22

    申请号：US15533989

    申请日：2015-12-04

    Applicant: ams AG

    Inventor： Hubert ENICHLMAIR

    IPC: H01L31/0216 ,  H01L27/144 ,  H01L31/02

    CPC classification number: H01L31/02165 ,  H01L27/1443 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14685 ,  H01L31/02005 ,  H01L31/02164 ,  H01L2224/11

    Abstract: An integrated optical sensor comprises a semiconductor substrate (1), an integrated circuit (2), a dielectric layer (6), a wiring (4), a structured filter layer (7) and a diffuser (10). The semiconductor substrate (1) has a main surface (11) and the integrated circuit (2) is arranged in the substrate (1) at or near the main surface (11). Furthermore, the integrated circuit (2) comprises at least one light sensitive component (3). The dielectric layer (6) comprises at least one compound of the semiconductor material. The dielectric layer (6) is arranged on or above the main surface (11). The wiring (4) is arranged in the dielectric layer (6) and provides an electrical connection to the integrated circuit (2), i.e. the wiring is connected to the integrated circuit (2). The structured filter layer (7) is arranged on the dielectric layer (6) and faces the at least one light sensitive component (3), i.e. the diffusor (10) is positioned over the structured filter layer (7). In particular, the structured filter layer (7) is adapted for diffused incident light. The diffuser (10) is arranged on the structured filter layer (7).

    SEMICONDUCTOR DEVICE WITH THROUGH-SUBSTRATE VIA AND CORRESPONDING METHOD OF MANUFACTURE
    2.
    发明申请
    SEMICONDUCTOR DEVICE WITH THROUGH-SUBSTRATE VIA AND CORRESPONDING METHOD OF MANUFACTURE 审中-公开
    具有通过基板的半导体器件和相应的制造方法

    公开(公告)号：US20160322519A1

    公开(公告)日：2016-11-03

    申请号：US15107901

    申请日：2014-12-12

    Applicant: AMS AG

    Inventor： Franz SCHRANK ,  Sara CARNIELLO ,  Hubert ENICHLMAIR ,  Jochen KRAFT ,  Bernhard LOEFFLER ,  Rainer HOLZHAIDER

    IPC: H01L31/0224 ,  H01L31/103 ,  H01L31/18 ,  H01L31/0216

    Abstract: A dielectric layer (2) is arranged on the main surface (10) of a semiconductor substrate (1), and a passivation layer (6) is arranged on the dielectric layer. A metal layer (3) is embedded in the dielectric layer above an opening (12) in the substrate, and a metallization (14) is arranged in the opening. The metallization contacts the metal layer and forms a through-substrate via to a rear surface (11) of the substrate. A layer or layer sequence (7, 8, 9) comprising at least one further layer is arranged on the passivation layer above the opening. In this way the bottom of the through-substrate via is stabilized. A plug (17) may additionally be arranged in the opening without filling the opening.

    Abstract translation: 在半导体衬底（1）的主表面（10）上布置介电层（2），并且在介质层上布置钝化层（6）。 金属层（3）嵌入基板中的开口（12）上方的电介质层中，并且金属化层（14）布置在开口中。 金属化接触金属层，并通过基板的后表面（11）形成贯穿基板。 包含至少一个另外的层的层或层序列（7,8,9）布置在开口上方的钝化层上。 以这种方式，穿透基底通孔的底部是稳定的。 插头（17）还可以布置在开口中而不填充开口。

    OPTICAL SENSING DEVICE AND METHOD FOR MANUFACTURING AN OPTICAL SENSING DEVICE
    3.
    发明申请
    OPTICAL SENSING DEVICE AND METHOD FOR MANUFACTURING AN OPTICAL SENSING DEVICE 审中-公开

    公开(公告)号：US20180372546A1

    公开(公告)日：2018-12-27

    申请号：US16062089

    申请日：2016-11-29

    Applicant: ams AG

    Inventor： Hubert ENICHLMAIR ,  Gerhard EILMSTEINER

    IPC: G01J3/51 ,  G01J3/26 ,  G01J3/28 ,  G02B5/28

    Abstract: An optical sensing device comprises a substrate carrying a first and a second photodetector stack comprises a band-pass filter, a decoupling layer arranged on the band-pass filter and a lower dielectric mirror arranged on the decoupling layer. The filter stack comprises a spacer stack with a primary spacer layer arranged on the lower dielectric mirror, comprising a first dielectric material and covering the photodetector array. The spacer stack comprises a first spacer layer comprising the first dielectric material, wherein a first segment of the first spacer layer is arranged on the primary spacer layer and covers the second photodetector but not the first photodetector. The filter stack comprises an upper dielectric mirror arranged on the spacer stack.

    SEMICONDUCTOR DEVICE FOR OPTICAL APPLICATIONS AND METHOD OF PRODUCING SUCH A SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE FOR OPTICAL APPLICATIONS AND METHOD OF PRODUCING SUCH A SEMICONDUCTOR DEVICE 审中-公开
    用于光学应用的半导体器件和生产这种半导体器件的方法

    公开(公告)号：US20160343757A1

    公开(公告)日：2016-11-24

    申请号：US15114387

    申请日：2015-01-14

    Applicant: ams AG

    Inventor： Hubert ENICHLMAIR ,  Franz SCHRANK

    IPC: H01L27/146

    CPC classification number: H01L27/14625 ,  H01L23/481 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14687

    Abstract: A sensor (2) is arranged at a main surface (10) of a semiconductor substrate (1), and a filter (3) is arranged above the sensor. A through-substrate via (4) penetrates the substrate outside the region of the sensor. A semiconductor body is applied above the main surface and then partially removed at least in an area above the sensor. A portion of the semiconductor body remains above the through-substrate via as a frame layer (5). The filter is on a level with the frame layer.

    Abstract translation: 传感器（2）布置在半导体衬底（1）的主表面（10）处，并且过滤器（3）布置在传感器上方。 贯穿基板通孔（4）在传感器的区域外部穿透基板。 半导体主体被施加在主表面上方，然后至少在传感器上方的区域中被部分地移除。 半导体体的一部分作为框架层（5）保持在贯通基板的上方。 过滤器与帧层处于一个级别。

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