Abstract:
An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.
Abstract:
An organic light-emitting diode display may have an array of pixel circuits. Each pixel circuit may contain an organic light-emitting diode that emits light, a drive transistor that controls current flow through the diode, and additional transistors such as switching transistors for loading data into the pixel circuit and emission transistors for enabling and disabling current flow through the drive transistor and diode. Gate driver circuitry may produce emission control signals that control the emission transistors. Display driver circuitry may generate a start signal with a digitally controlled pulse width. The start signal may be applied to shift register circuitry in the gate driver circuitry. The pulse width of the start signal may be adjusted to adjust the luminance of the display.
Abstract:
A display may have an array of pixels formed from organic light-emitting diodes and thin-film transistor circuitry. A planarization layer may be interposed between the thin-film transistor circuitry and the organic light-emitting diodes. To protect the organic light-emitting diodes from photoactive compounds that may be outgassed from the planarization layer, an inorganic barrier layer may be interposed between the planarization layer and the organic light-emitting diodes. The inorganic barrier layer may be formed on top of and/or below a pixel definition layer that defines light-emitting zones for the organic light-emitting diodes. In another suitable arrangement, the inorganic barrier layer may itself define light-emitting zones and may be used in place of a polymer-based pixel definition layer. The inorganic barrier layer may include trenches in which the emissive material of the light-emitting diodes is formed.
Abstract:
A display may have an array of pixels formed from organic light-emitting diodes and thin-film transistor circuitry. A planarization layer may be interposed between the thin-film transistor circuitry and the organic light-emitting diodes. To protect the organic light-emitting diodes from photoactive compounds that may be outgassed from the planarization layer, an inorganic barrier layer may be interposed between the planarization layer and the organic light-emitting diodes. The inorganic barrier layer may be formed on top of and/or below a pixel definition layer that defines light-emitting zones for the organic light-emitting diodes. In another suitable arrangement, the inorganic barrier layer may itself define light-emitting zones and may be used in place of a polymer-based pixel definition layer. The inorganic barrier layer may include trenches in which the emissive material of the light-emitting diodes is formed.
Abstract:
An electronic device may be provided with an organic light-emitting diode display with minimized border regions. The border regions may be minimized by providing conductive structures that pass through polymer layers of the display and/or conductive structures that wrap around an edge of the display and couple conductive traces on the display to conductive traces on additional circuitry that is mounted behind the display.
Abstract:
A display may have thin-film transistor (TFT) circuitry on a substrate. An array of organic light-emitting diodes may be formed on the thin-film transistor circuitry. The display may include inorganic brittle layers and organic and metal layers that are ductile and mechanically robust. To help prevent propagation of cracks and other defects along the edge of the display, the display may be provided with crack stop structures and crack detection circuitry. The crack detection circuitry may include one or more loops that are formed along the periphery of the display. The crack stop structures may include TFT/OLED structures formed in a staggered configuration. At least some of the brittle layers can be removed from the panel edge. An additional adhesion layer may also be formed directly on the substrate to help prevent inorganic layers from debonding from the surface of the substrate.
Abstract:
An active matrix liquid crystal display having an array of pixels is provided. The display includes a thin film transistor (TFT) for each pixel. The TFT has a gate electrode, a source electrode overlapping with a first area of the gate electrode, and a drain electrode overlapping with a second area with the gate electrode. The display also includes a color filter layer disposed over the TFT. The color filter layer has a first via hole to expose a portion of the drain electrode. The display further includes a metal layer disposed over the color filter layer and covering the gate electrode. The metal layer is configured to connect to the drain electrode through the first via hole. The display also includes an organic insulator layer disposed over the metal layer. The organic insulator layer has a second via hole to expose a first portion of the metal layer and a third via hole to expose a second portion of the metal layer.
Abstract:
A display may have an array of organic light-emitting diode display pixels. Each display pixel may have a light-emitting diode that emits light under control of a drive transistor. Each display pixel may also have control transistors for compensation and programming operations. Each display pixel may have five p-type transistor and two capacitors. One of the five p-type transistors may serve as the drive transistor and may be compensated using the remaining four of the p-type transistors and the two capacitors. A first of the capacitors may be coupled between the gate and source of the drive transistor. A second of the capacitors may have a terminal coupled to the source. Alternatively, each display pixel may have six p-type transistors and a single capacitor. The six p-type transistors may include a drive transistor having a gate coupled to the capacitor.
Abstract:
A method of connecting to a first metal layer in a semiconductor flow process. Disclosed embodiments connect to the first metal layer by etching a first portion of a viahole through an etch stop layer and a gate insulation layer to reach a first metal layer, depositing a second metal layer such that the second metal layer contacts the first metal layer within the viahole, and etching a second portion of the viahole through a first passivation layer and an organic layer to reach the second metal layer.
Abstract:
A flexible display having an array of pixels or sub-pixels is provided. The display includes a flexible substrate and an array of thin film transistors (TFTs) corresponding to the array of pixels or sub-pixels on the substrate. The display also includes a first plurality of metal lines coupled to gate electrodes of the TFTs and a second plurality of metal lines coupled to source electrodes and drain electrodes of the TFTs. At least one of the first plurality of metal lines and the second plurality of metal lines comprises a non-stretchable portion in the TFT areas and a stretchable portion outside the TFT areas.