公开(公告)号：US20190259611A1

公开(公告)日：2019-08-22

申请号：US15925532

申请日：2018-03-19

Applicant: ASM IP Holding B.V.

Inventor： Akinori Nakano ,  Toshihisa Nozawa ,  Ryu Nakano

IPC: H01L21/033 ,  H01L21/027 ,  H01J37/32 ,  H01L21/3065

Abstract: Provided are a substrate processing apparatus and a substrate processing method capable of achieving uniform trimming throughout an entire surface of a substrate. The substrate processing apparatus includes a gas channel including a center gas inlet and an additional gas inlet spaced apart from the center gas inlet, and a shower plate including a plurality of holes connected to the center gas inlet and the additional gas inlet, wherein a gas flow channel is formed having a clearance defined by a lower surface of the gas channel and an upper surface of the shower plate, the lower surface and the upper surface being substantially parallel.

公开(公告)号：US20160093485A1

公开(公告)日：2016-03-31

申请号：US14498036

申请日：2014-09-26

Applicant: ASM IP Holding B.V.

Inventor： Akiko Kobayashi ,  Akinori Nakano ,  Dai Ishikawa ,  Kiyohiro Matsushita

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  C23C16/45542 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02359 ,  H01L21/02362 ,  H01L21/3105

Abstract: A method is for hydrophobization of a surface of a silicon-containing film by atomic layer deposition (ALD), wherein the surface is subjected to atmospheric exposure. The method includes: (i) providing a substrate with a silicon-containing film formed thereon; and (ii) forming on a surface of the silicon-containing film a hydrophobic atomic layer as a protective layer subjected to atmospheric exposure, by exposing the surface to a silicon-containing treating gas without exciting the gas. The treating gas is capable of being chemisorbed on the surface to form a hydrophobic atomic layer thereon.

Abstract translation: 一种方法是通过原子层沉积（ALD）使含硅膜的表面疏水化，其中该表面经受大气暴露。 该方法包括：（i）向基板提供其上形成的含硅膜; 和（ii）通过将表面暴露于含硅处理气体而不使气体激发，在作为经受大气暴露的保护层的疏水性原子层的表面上形成含硅膜的表面。 处理气体能够在表面上被化学吸附以在其上形成疏水原子层。

公开(公告)号：US20150118864A1

公开(公告)日：2015-04-30

申请号：US14069244

申请日：2013-10-31

Applicant: ASM IP Holding B.V.

Inventor： Akinori Nakano ,  Shintaro Ueda ,  Dai Ishikawa ,  Kiyohiro Matsushita

IPC: H01L21/02

CPC classification number: H01L21/02126 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0234 ,  H01L21/02348

Abstract: A method for forming a gap-fill SiOCH film on a patterned substrate includes: (i) providing a substrate having recessed features on its surface; (ii) filling the recessed features of the substrate with a SiOCH film which is flowable and non-porous; (iii) after completion of step (ii), exposing the SiOCH film to a plasma including a hydrogen plasma; and (iv) curing the plasma-exposed SiOCH film with UV light.

Abstract translation: 在图案化衬底上形成间隙填充SiOCH膜的方法包括：（i）提供在其表面上具有凹陷特征的衬底; （ii）用可流动且无孔的SiOCH膜填充基底的凹陷特征; （iii）步骤（ii）完成后，将SiOCH膜暴露于包括氢等离子体的等离子体; 和（iv）用UV光固化等离子体暴露的SiOCH膜。

公开(公告)号：US20140363983A1

公开(公告)日：2014-12-11

申请号：US13912666

申请日：2013-06-07

Applicant: ASM IP Holding B.V.

Inventor： Akinori Nakano ,  Shintaro Ueda

IPC: H01L21/02

CPC classification number: H01L21/02112 ,  C23C16/02 ,  C23C16/401 ,  H01L21/0201 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/76834 ,  H01L21/76837

Abstract: A method for filling recesses of a substrate with an insulation film includes: (i) exposing surfaces of the recesses of the substrate to a pre-deposition gas in a reactive state in a reaction space to treat the surfaces with reactive hydrocarbons generated from the pre-deposition gas without filling the recesses; and (ii) depositing a flowable insulation film using a process gas other than the pre-deposition gas on a surface of the substrate to fill the recesses treated in step (i) therewith by plasma reaction. The pre-deposition gas has at least one hydrocarbon unit in its molecule.

Abstract translation: 用绝缘膜填充基板的凹部的方法包括：（i）将基板的凹部的表面暴露于处于反应状态的反应性状态的预沉积气体，以便在由表面产生的活性烃 - 不填充凹槽的沉积气体; 和（ii）使用除了预沉积气体之外的处理气体在基板的表面上沉积可流动的绝缘膜，以通过等离子体反应填充步骤（i）中处理的凹部。 预沉积气体在其分子中具有至少一个烃单元。

公开(公告)号：US09899291B2

公开(公告)日：2018-02-20

申请号：US14798136

申请日：2015-07-13

Applicant: ASM IP Holding B.V.

Inventor： Richika Kato ,  Seiji Okuro ,  Kunitoshi Namba ,  Yuya Nonaka ,  Akinori Nakano

IPC: H01L23/31 ,  H01L21/02 ,  H01L21/324

CPC classification number: H01L23/3192 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/324

Abstract: A method for protecting a layer includes: providing a substrate having a target layer and forming a protective layer on the target layer, said protective layer contacting and covering the target layer and containing a hydrocarbon-based layer constituting at least an upper part of the protective layer, which hydrocarbon-based layer is formed by plasma-enhanced atomic layer deposition (PEALD) using an alkylaminosilane precursor and a noble gas without a reactant.

公开(公告)号：US20230040728A1

公开(公告)日：2023-02-09

申请号：US17969227

申请日：2022-10-19

Applicant: ASM IP Holding B.V.

Inventor： Akinori Nakano ,  Toshihisa Nozawa ,  Ryu Nakano

IPC: H01L21/033 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/027 ,  C23C16/00 ,  H01L21/02 ,  H01L21/311 ,  C23C16/455

Abstract: Provided are a substrate processing apparatus and a substrate processing method capable of achieving uniform trimming throughout an entire surface of a substrate. The substrate processing apparatus includes a gas channel including a center gas inlet and an additional gas inlet spaced apart from the center gas inlet, and a shower plate including a plurality of holes connected to the center gas inlet and the additional gas inlet, wherein a gas flow channel is formed having a clearance defined by a lower surface of the gas channel and an upper surface of the shower plate, the lower surface and the upper surface being substantially parallel.

公开(公告)号：US11482418B2

公开(公告)日：2022-10-25

申请号：US15925532

申请日：2018-03-19

Applicant: ASM IP Holding B.V.

Inventor： Akinori Nakano ,  Toshihisa Nozawa ,  Ryu Nakano

IPC: C23C16/455 ,  H01L21/033 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/027 ,  C23C16/00 ,  H01L21/02 ,  H01L21/311

Abstract: Provided are a substrate processing apparatus and a substrate processing method capable of achieving uniform trimming throughout an entire surface of a substrate. The substrate processing apparatus includes a gas channel including a center gas inlet and an additional gas inlet spaced apart from the center gas inlet, and a shower plate including a plurality of holes connected to the center gas inlet and the additional gas inlet, wherein a gas flow channel is formed having a clearance defined by a lower surface of the gas channel and an upper surface of the shower plate, the lower surface and the upper surface being substantially parallel.

公开(公告)号：US20170018477A1

公开(公告)日：2017-01-19

申请号：US14798136

申请日：2015-07-13

Applicant: ASM IP Holding B.V.

Inventor： Richika Kato ,  Seiji Okuro ,  Kunitoshi Namba ,  Yuya Nonaka ,  Akinori Nakano

IPC: H01L23/31 ,  H01L21/324 ,  H01L21/02

CPC classification number: H01L23/3192 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/324

Abstract: A method for protecting a layer includes: providing a substrate having a target layer and forming a protective layer on the target layer, said protective layer contacting and covering the target layer and containing a hydrocarbon-based layer constituting at least an upper part of the protective layer, which hydrocarbon-based layer is formed by plasma-enhanced atomic layer deposition (PEALD) using an alkylaminosilane precursor and a noble gas without a reactant.

Abstract translation: 一种保护层的方法包括：提供具有目标层并在靶层上形成保护层的衬底，所述保护层与目标层接触并覆盖，并含有至少构成保护层上部的烃基层 层，通过使用烷基氨基硅烷前体的等离子体增强原子层沉积（PEALD）和没有反应物的惰性气体形成烃基层。

公开(公告)号：US09117657B2

公开(公告)日：2015-08-25

申请号：US13912666

申请日：2013-06-07

Applicant: ASM IP Holding B.V.

Inventor： Akinori Nakano ,  Shintaro Ueda

IPC: H01L21/02

CPC classification number: H01L21/02112 ,  C23C16/02 ,  C23C16/401 ,  H01L21/0201 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/76834 ,  H01L21/76837

Abstract: A method for filling recesses of a substrate with an insulation film includes: (i) exposing surfaces of the recesses of the substrate to a pre-deposition gas in a reactive state in a reaction space to treat the surfaces with reactive hydrocarbons generated from the pre-deposition gas without filling the recesses; and (ii) depositing a flowable insulation film using a process gas other than the pre-deposition gas on a surface of the substrate to fill the recesses treated in step (i) therewith by plasma reaction. The pre-deposition gas has at least one hydrocarbon unit in its molecule.

Abstract translation: 用绝缘膜填充基板的凹部的方法包括：（i）将基板的凹部的表面暴露于处于反应状态的反应性状态的预沉积气体，以便在由表面产生的活性烃 - 不填充凹槽的沉积气体; 和（ii）使用除了预沉积气体之外的处理气体在基板的表面上沉积可流动的绝缘膜，以通过等离子体反应填充步骤（i）中处理的凹部。 预沉积气体在其分子中具有至少一个烃单元。

公开(公告)号：US09478414B2

公开(公告)日：2016-10-25

申请号：US14498036

申请日：2014-09-26

Applicant: ASM IP Holding B.V.

Inventor： Akiko Kobayashi ,  Akinori Nakano ,  Dai Ishikawa ,  Kiyohiro Matsushita

IPC: H01L21/02 ,  H01L21/3105

CPC classification number: H01L21/0228 ,  C23C16/45542 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02359 ,  H01L21/02362 ,  H01L21/3105

Abstract: A method is for hydrophobization of a surface of a silicon-containing film by atomic layer deposition (ALD), wherein the surface is subjected to atmospheric exposure. The method includes: (i) providing a substrate with a silicon-containing film formed thereon; and (ii) forming on a surface of the silicon-containing film a hydrophobic atomic layer as a protective layer subjected to atmospheric exposure, by exposing the surface to a silicon-containing treating gas without exciting the gas. The treating gas is capable of being chemisorbed on the surface to form a hydrophobic atomic layer thereon.

Abstract translation: 一种方法是通过原子层沉积（ALD）使含硅膜的表面疏水化，其中该表面经受大气暴露。 该方法包括：（i）向基板提供其上形成的含硅膜; 和（ii）通过将表面暴露于含硅处理气体而不使气体激发，在作为经受大气暴露的保护层的疏水性原子层的表面上形成含硅膜的表面。 处理气体能够在表面上被化学吸附以在其上形成疏水原子层。