公开(公告)号：US12125700B2

公开(公告)日：2024-10-22

申请号：US17148391

申请日：2021-01-13

Applicant: ASM IP Holding B.V.

Inventor： Mitsuya Utsuno ,  Hirotsugu Sugiura ,  Yoshio Susa

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/50

CPC classification number: H01L21/02274 ,  C23C16/45525 ,  C23C16/50 ,  H01L21/0228

Abstract: Methods and systems for forming high aspect ratio features on a substrate are disclosed. Exemplary methods include forming a first carbon layer within a recess, etching a portion of the first carbon layer within the recess, and forming a second carbon layer within the recess. Structures formed using the methods or systems are also disclosed.

公开(公告)号：US20210151348A1

公开(公告)日：2021-05-20

申请号：US16950899

申请日：2020-11-17

Applicant: ASM IP Holding B.V.

Inventor： Mitsuya Utsuno ,  Yan Zhang ,  Yoshio Susa ,  Atsuki Fukazawa

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/311 ,  C23C16/26 ,  C23C16/455 ,  C23C16/50 ,  C23C16/56 ,  C23C16/04

Abstract: Methods and systems for filling a recess on a surface of a substrate with carbon-containing material are disclosed. Exemplary methods include forming a first carbon layer within the recess, etching a portion of the first carbon layer within the recess, and forming a second carbon layer within the recess. Structures formed using the method or system are also disclosed.

公开(公告)号：US10755922B2

公开(公告)日：2020-08-25

申请号：US16427288

申请日：2019-05-30

Applicant: ASM IP Holding B.V.

Inventor： Timothee Julien Vincent Blanquart ,  Mitsuya Utsuno ,  Yoshio Susa ,  Atsuki Fukazawa ,  Toshio Nakanishi

IPC: H01L21/02 ,  C23C16/455 ,  H01L21/762 ,  H01L21/768 ,  C23C16/26 ,  C23C16/50

Abstract: A film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or N2 plasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.

公开(公告)号：US12129548B2

公开(公告)日：2024-10-29

申请号：US18130959

申请日：2023-04-05

Applicant: ASM IP Holding B.V.

Inventor： Tomohiro Kubota ,  Mitsuya Utsuno ,  Toshihisa Nozawa ,  Seiji Samukawa ,  Hua Hsuan Chen

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/48 ,  H05H3/02

CPC classification number: C23C16/45536 ,  C23C16/402 ,  C23C16/45553 ,  C23C16/486 ,  H05H3/02

Abstract: Methods of forming structures using a neutral beam, structures formed using a neutral beam, and reactor systems for forming the structures are disclosed. The neutral beam can be used to provide activated species during deposition of a layer and/or to provide activated species to treat a deposited layer.

公开(公告)号：US11643724B2

公开(公告)日：2023-05-09

申请号：US16930211

申请日：2020-07-15

Applicant: ASM IP Holding B.V.

Inventor： Tomohiro Kubota ,  Mitsuya Utsuno ,  Toshihisa Nozawa ,  Seiji Samukawa ,  Hua Hsuan Chen

IPC: C23C16/455 ,  H05H3/02 ,  C23C16/40 ,  C23C16/48

CPC classification number: C23C16/45536 ,  C23C16/402 ,  C23C16/45553 ,  C23C16/486 ,  H05H3/02

Abstract: Methods of forming structures using a neutral beam, structures formed using a neutral beam, and reactor systems for forming the structures are disclosed. The neutral beam can be used to provide activated species during deposition of a layer and/or to provide activated species to treat a deposited layer.

公开(公告)号：US20200013612A1

公开(公告)日：2020-01-09

申请号：US16427288

申请日：2019-05-30

Applicant: ASM IP Holding B.V.

Inventor： Timothee Julien Vincent Blanquart ,  Mitsuya Utsuno ,  Yoshio Susa ,  Atsuki Fukazawa ,  Toshio Nakanishi

IPC: H01L21/02 ,  H01L21/762 ,  H01L21/768

Abstract: A film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or N2 plasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.

公开(公告)号：US20230250531A1

公开(公告)日：2023-08-10

申请号：US18130959

申请日：2023-04-05

Applicant: ASM IP Holding B.V.

Inventor： Tomohiro Kubota ,  Mitsuya Utsuno ,  Toshihisa Nozawa ,  Seiji Samukawa ,  Hua Hsuan Chen

IPC: C23C16/455 ,  H05H3/02 ,  C23C16/40 ,  C23C16/48

CPC classification number: C23C16/45536 ,  H05H3/02 ,  C23C16/402 ,  C23C16/486 ,  C23C16/45553

Abstract: Methods of forming structures using a neutral beam, structures formed using a neutral beam, and reactor systems for forming the structures are disclosed. The neutral beam can be used to provide activated species during deposition of a layer and/or to provide activated species to treat a deposited layer.

公开(公告)号：US20210225642A1

公开(公告)日：2021-07-22

申请号：US17148391

申请日：2021-01-13

Applicant: ASM IP Holding B.V.

Inventor： Mitsuya Utsuno ,  Hirotsugu Sugiura ,  Yoshio Susa

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/50

Abstract: Methods and systems for forming high aspect ratio features on a substrate are disclosed. Exemplary methods include forming a first carbon layer within a recess, etching a portion of the first carbon layer within the recess, and forming a second carbon layer within the recess. Structures formed using the methods or systems are also disclosed.

公开(公告)号：US20200118811A1

公开(公告)日：2020-04-16

申请号：US16161744

申请日：2018-10-16

Applicant: ASM IP Holding B.V.

Inventor： Mitsuya Utsuno ,  Tomohiro Kubota ,  Dai Ishikawa

IPC: H01L21/027 ,  H01L21/311

Abstract: Methods for etching a carbon-containing feature are provided. The methods may include: providing a substrate having a carbon-containing feature formed thereon in a reaction space; supplying helium gas and an oxidizing to the reaction space; generating a plasma within the reaction space from a gas mixture comprising helium gas and the oxidizing gas; and anisotropically etching the carbon-containing feature utilizing the plasma to cause lateral etching of the carbon-containing feature.

公开(公告)号：US11646197B2

公开(公告)日：2023-05-09

申请号：US16986274

申请日：2020-08-06

Applicant: ASM IP Holding B.V.

Inventor： Timothee Julien Vincent Blanquart ,  Mitsuya Utsuno ,  Yoshio Susa ,  Atsuki Fukazawa ,  Toshio Nakanishi

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/762 ,  C23C16/26 ,  C23C16/455 ,  C23C16/50

CPC classification number: H01L21/0228 ,  C23C16/26 ,  C23C16/45542 ,  C23C16/50 ,  H01L21/02115 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/76224 ,  H01L21/76229 ,  H01L21/76837

Abstract: A film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or N2 plasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.