公开(公告)号：US20200321209A1

公开(公告)日：2020-10-08

申请号：US16904166

申请日：2020-06-17

Applicant: ASM IP Holding B.V.

Inventor： Dai Ishikawa ,  Atsuki Fukazawa ,  Eiichiro Shiba ,  Shinya Ueda ,  Taishi Ebisudani ,  SeungJu Chun ,  YongMin Yoo ,  YoonKi Min ,  SeYong Kim ,  JongWan Choi

IPC: H01L21/02 ,  H01L21/311

Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top/bottom portion according to the different chemical resistance properties.

公开(公告)号：US10720322B2

公开(公告)日：2020-07-21

申请号：US16167225

申请日：2018-10-22

Applicant: ASM IP Holding B.V.

Inventor： Dai Ishikawa ,  Atsuki Fukazawa ,  Eiichiro Shiba ,  Shinya Ueda ,  Taishi Ebisudani ,  SeungJu Chun ,  YongMin Yoo ,  YoonKi Min ,  SeYong Kim ,  JongWan Choi

IPC: H01L21/02 ,  H01L21/311

Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top/bottom portion according to the different chemical resistance properties.

公开(公告)号：US20230392278A1

公开(公告)日：2023-12-07

申请号：US18235589

申请日：2023-08-18

Applicant: ASM IP Holding B.V.

Inventor： SungBae Kim ,  YongMin Yoo ,  SeungWoo Choi ,  DongSeok Kang ,  JongWon Shon

IPC: C25D11/04 ,  C23C16/44 ,  C25D11/02 ,  H01L21/687 ,  H01L21/67 ,  C23C16/458 ,  C23C16/509 ,  H01J37/32 ,  C23C16/455

CPC classification number: C25D11/04 ,  C23C16/4404 ,  C23C16/4409 ,  C25D11/022 ,  H01L21/68735 ,  H01L21/6719 ,  C23C16/4583 ,  C23C16/5096 ,  H01J37/3244 ,  C23C16/45525 ,  H01J37/32715 ,  H01L21/68757 ,  C23C16/4412 ,  H01J37/32477

Abstract: A substrate supporting plate that provides improved processing uniformity is disclosed. The substrate supporting plate may include a substrate mounting portion and a peripheral portion surrounding the substrate mounting portion. A portion of the peripheral portion may include an insulating layer. A central portion of the top surface may not include the insulating layer.

公开(公告)号：US20170250068A1

公开(公告)日：2017-08-31

申请号：US15592730

申请日：2017-05-11

Applicant: ASM IP Holding B.V.

Inventor： Dai Ishikawa ,  Atsuki Fukazawa ,  Eiichiro Shiba ,  Shinya Ueda ,  Taishi Ebisudani ,  SeungJu Chun ,  YongMin Yoo ,  YoonKi Min ,  SeYong Kim ,  JongWan Choi

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0217 ,  H01J2237/3347 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/31111

Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing either one of but not both of the top/bottom portion and the sidewall portion of the film by wet etching which removes the one of the top/bottom portion and the sidewall portion of the film more predominantly than the other according to the different chemical resistance properties.

公开(公告)号：US11676812B2

公开(公告)日：2023-06-13

申请号：US16904166

申请日：2020-06-17

Applicant: ASM IP Holding B.V.

Inventor： Dai Ishikawa ,  Atsuki Fukazawa ,  Eiichiro Shiba ,  Shinya Ueda ,  Taishi Ebisudani ,  SeungJu Chun ,  YongMin Yoo ,  YoonKi Min ,  SeYong Kim ,  JongWan Choi

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/0217 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31111 ,  H01J2237/3347

Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top/bottom portion according to the different chemical resistance properties.

公开(公告)号：US20190057857A1

公开(公告)日：2019-02-21

申请号：US16167225

申请日：2018-10-22

Applicant: ASM IP Holding B.V.

Inventor： Dai Ishikawa ,  Atsuki Fukazawa ,  Eiichiro Shiba ,  Shinya Ueda ,  Taishi Ebisudani ,  SeungJu Chun ,  YongMin Yoo ,  YoonKi Min ,  SeYong Kim ,  JongWan Choi

IPC: H01L21/02 ,  H01L21/311

Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top/bottom portion according to the different chemical resistance properties.

公开(公告)号：US20240339359A1

公开(公告)日：2024-10-10

申请号：US18626758

申请日：2024-04-04

Applicant: ASM IP Holding B.V.

Inventor： René Henricus Jozef Vervuurt ,  Timothee Blanquart ,  Jihee Jeon ,  YongMin Yoo ,  Andrey Sokolov ,  Maarten Stokhof ,  Steven Van Aerde ,  Dieter Pierreux ,  Hussein Mehdi

IPC: H01L21/768 ,  H01L21/02

CPC classification number: H01L21/76879 ,  H01L21/02126 ,  H01L21/0217 ,  H01L21/02274

Abstract: The present disclosure relates to method and apparatuses for filling a gap on a substrate. The method comprises providing a substrate, which comprises at least one gap into a reaction chamber, depositing a silicon containing first layer onto the substrate; subjecting the first layer to a phosphorous containing compound to form a flowable intermediate material, which at least partially fills the at least one gap on the substrate; and forming a solid material comprising silicon.

公开(公告)号：US10529554B2

公开(公告)日：2020-01-07

申请号：US15592730

申请日：2017-05-11

Applicant: ASM IP Holding B.V.

Inventor： Dai Ishikawa ,  Atsuki Fukazawa ,  Eiichiro Shiba ,  Shinya Ueda ,  Taishi Ebisudani ,  SeungJu Chun ,  YongMin Yoo ,  YoonKi Min ,  SeYong Kim ,  JongWan Choi

IPC: H01L21/02 ,  H01L21/306 ,  H01L21/311

Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing either one of but not both of the top/bottom portion and the sidewall portion of the film by wet etching which removes the one of the top/bottom portion and the sidewall portion of the film more predominantly than the other according to the different chemical resistance properties.