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公开(公告)号：US20230017491A1
公开(公告)日：2023-01-19
申请号：US17784566
申请日：2020-12-03
Applicant: ASML NETHERLANDS B.V. , ASML HOLDING N.V.
Inventor： Patricius Aloysius Jacobus TINNEMANS , Igor Matheus Petronalla AARTS , Kaustuve BHATTACHARYYA , Ralph BRINKHOF , Leendert Jan KARSSEMEIJER , Stefan Carolus Jacobus A KEIJ , Haico Victor KOK , Simon Gijsbert Josephus MATHIJSSEN , Henricus Johannes Lambertu MEGENS , Samee Ur REHMAN
Abstract: A metrology method relating to measurement of a structure on a substrate, the structure being subject to one or more asymmetric deviation. The method includes obtaining at least one intensity asymmetry value relating to the one or more asymmetric deviations, wherein the at least one intensity asymmetry value includes a metric related to a difference or imbalance between the respective intensities or amplitudes of at least two diffraction orders of radiation diffracted by the structure; determining at least one phase offset value corresponding to the one or more asymmetric deviations based on the at least one intensity asymmetry value; and determining one or more measurement corrections for the one or more asymmetric deviations from the at least one phase offset value.
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公开(公告)号：US20240027918A1
公开(公告)日：2024-01-25
申请号：US18004555
申请日：2021-05-27
Applicant: ASML Netherlands B.V.
Inventor： Simon Gijsbert Josephus MATHIJSSEN , Patricius Aloysius Jacobus TINNEMANS , Arie Jeffrey DEN BOEF , Kaustuve BHATTACHARYYA , Samee Ur REHMAN
CPC classification number: G03F7/70633 , G03F9/7046 , G03F9/7042
Abstract: Disclosed is a method of improving a measurement of a parameter of interest. The method comprises obtaining metrology data comprising a plurality of measured values of the parameter of interest, relating to one or more targets on a substrate, each measured value relating to a different measurement combination of a target of said one or more targets and a measurement condition used to measure that target and asymmetry metric data relating to asymmetry for said one or more targets. A respective relationship is determined for each of said measurement combinations relating a true value for the parameter of interest to the asymmetry metric data, based on an assumption that there is a common true value for the parameter of interest over said measurement combinations. These relationships are used to improve a measurement of the parameter of interest.
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公开(公告)号：US20220057192A1
公开(公告)日：2022-02-24
申请号：US17519641
申请日：2021-11-05
Applicant: ASML NETHERLANDS B.V.
Inventor： Kaustuve BHATTACHARYYA , Henricus Wilhelmus Maria VAN BUEL , Christophe David FOUQUET , Hendrik Jan Hidde SMILDE , Maurits VAN DER SCHAAR , Arie Jeffrey DEN BOEF , Richard Johannes Franciscus VAN HAREN , Xing Lan LIU , Johannes Marcus Maria BELTMAN , Andreas FUCHS , Omer Abubaker Omer ADAM , Michael KUBIS , Martin Jacobus Johan JAK
Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.
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公开(公告)号：US20190079413A1
公开(公告)日：2019-03-14
申请号：US16106322
申请日：2018-08-21
Applicant: ASML Netherlands B.V.
Abstract: An apparatus and method for estimating a parameter of a lithographic process and an apparatus and method for determining a relationship between a measure of quality of an estimate of a parameter of a lithographic process are provided. In the apparatus for estimating the parameter a processor is configured to determine a quality of the estimate of the parameter relating to the tested substrate based on a measure of feature asymmetry in the at least first features of the tested substrate and further based on a relationship determined for a plurality of corresponding at least first features of at least one further substrate representative of the tested substrate, the relationship being between a measure of quality of an estimate of the parameter relating to the at least one further substrate and a measure of feature asymmetry in the corresponding first features.
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公开(公告)号：US20180314160A1
公开(公告)日：2018-11-01
申请号：US15771585
申请日：2016-10-07
Applicant: ASML NETHERLANDS B.V.
CPC classification number: G03F7/705 , G03F7/70625 , G03F7/70991
Abstract: Increasingly, metrology systems are integrated within the lithographic apparatuses, to provide integrated metrology within the lithographic process. However, this integration can result in a throughput or productivity impact of the whole lithographic apparatus which can be difficult to predict. It is therefore proposed to provide a simulation model which is operable to acquire throughput information associated with a throughput of a plurality of substrates within a lithographic apparatus, said throughput information comprising a throughput parameter, predict, using a throughput simulator the throughput using the throughput parameter as an input parameter. The throughput simulator may be calibrated using the acquired throughput information. The impact of at least one change of a throughput parameter on the throughput of the lithographic apparatus may be predicted using the throughput simulator.
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Patent Agency Ranking
公开(公告)号：US20240012342A1
公开(公告)日：2024-01-11
申请号：US18035008
申请日：2021-11-04
Applicant: ASML NETHERLANDS B.V.
Inventor： Sebastianus Adrianus GOORDEN , Simon Gijsbert Josephus MATHIJSSEN , Leendert Jan KARSSEMEIJER , Manouk RIJPSTRA , Ralph BRINKHOF , Kaustuve BHATTACHARYYA
CPC classification number: G03F9/7046 , G03F7/706831 , G03F7/70625 , G03F7/706837
Abstract: A method for a metrology process, the method includes obtaining first measurement data relating to a first set of measurement conditions and determining a first measurement recipe based on the first measurement data. At least one performance indicator is determined from one or more components of the first measurement data obtained from a component analysis or statistical decomposition. Alternatively, at least one performance indicator is determined from a comparison of one or more first measurement values relating to the first measurement recipe and one or more second measurement values relating to a second measurement recipe, where second measurement recipe is different to the first measurement data and relates a second set of measurement conditions, the second set of measurement conditions being different to the first set of measurement conditions.
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公开(公告)号：US20230062558A1
公开(公告)日：2023-03-02
申请号：US17800346
申请日：2021-02-02
Applicant: ASML NETHERLANDS B.V.
IPC: G03F7/20
Abstract: A method of inferring a value for at least one local uniformity metric relating to a product structure, the method including: obtaining intensity data including an intensity image relating to at least one diffraction order obtained from a measurement on a target; obtaining at least one intensity distribution from the intensity image; determining, from the at least one intensity distribution, an intensity indicator expressing a variation of either intensity over the at least one diffraction order, or a difference in intensity between two complimentary diffraction orders over the intensity image; and inferring the value for the at least one local uniformity metric from the intensity indicator.
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公开(公告)号：US20210356873A1
公开(公告)日：2021-11-18
申请号：US17277583
申请日：2019-09-19
Applicant: ASML NETHERLANDS B.V.
Inventor： Arie Jeffrey DEN BOEF , Kaustuve BHATTACHARYYA , Kenji MORISAKI , Simon Gijsbert MATHIJSSEN
IPC: G03F7/20
Abstract: A method to measure a parameter of a manufacturing process, the method including illuminating a target with radiation, detecting scattered radiation from the target, and determining the parameter of interest from an asymmetry of the detected radiation.
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公开(公告)号：US20210018847A1
公开(公告)日：2021-01-21
申请号：US17061641
申请日：2020-10-02
Applicant: ASML NETHERLANDS B.V.
Inventor： Emil Peter SCHMITT-WEAVER , Kaustuve BHATTACHARYYA , Wim Tjibbo TEL , Frank STAALS , Leon Martin LEVASIER
Abstract: A method for monitoring a lithographic process, and associated lithographic apparatus. The method includes obtaining height variation data relating to a substrate supported by a substrate support and fitting a regression through the height variation data, the regression approximating the shape of the substrate; residual data between the height variation data and the regression is determined; and variation of the residual data is monitored over time. The residual data may be deconvolved based on known features of the substrate support.
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公开(公告)号：US20200103762A1
公开(公告)日：2020-04-02
申请号：US16700381
申请日：2019-12-02
Applicant: ASML NETHERLANDS B.V.
Inventor： Arie Jeffrey DEN BOEF , Kaustuve BHATTACHARYYA
Abstract: A method including determining a type of structural asymmetry of the target from measured values of the target, and performing a simulation of optical measurement of the target to determine a value of an asymmetry parameter associated with the asymmetry type. A method including performing a simulation of optical measurement of a target to determine a value of an asymmetry parameter associated with a type of structural asymmetry of the target determined from measured values of the target, and analyzing a sensitivity of the asymmetry parameter to change in a target formation parameter associated with the target. A method including determining a structural asymmetry parameter of a target using a measured parameter of radiation diffracted by the target, and determining a property of a measurement beam of the target based on the structural asymmetry parameter that is least sensitive to change in a target formation parameter associated with the target.
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