公开(公告)号：US08455850B2

公开(公告)日：2013-06-04

申请号：US13416884

申请日：2012-03-09

申请人： Akira Endo ,  Yoshifumi Ueno ,  Youichi Sasaki ,  Osamu Wakabayashi

发明人： Akira Endo ,  Yoshifumi Ueno ,  Youichi Sasaki ,  Osamu Wakabayashi

IPC分类号： H05G2/00

CPC分类号： G21K5/00 ,  G03F7/70033 ,  H05G2/00 ,  H05G2/003 ,  H05G2/008

摘要： An extreme ultraviolet light source apparatus, which is to generate an extreme ultraviolet light by irradiating a target with a main pulse laser light after irradiating the target with a prepulse laser light, the extreme ultraviolet light source apparatus comprises: a prepulse laser light source generating a pre-plasma by irradiating the target with the prepulse laser light while a part of the target remains, the pre-plasma being generated at a different region from a target region, the different region being located on an incident side of the prepulse laser light; and a main pulse laser light source generating the extreme ultraviolet light by irradiating the pre-plasma with the main pulse laser light.

摘要翻译： 一种极紫外光源装置，其特征在于，所述极紫外光源装置包括：前脉冲激光光源，其产生前脉冲激光光源，所述极紫外光源装置包括：前脉冲激光光源，其通过用前脉冲激光照射所述靶之后用主脉冲激光照射靶， 在一部分目标物保留的同时用前脉冲激光照射靶的预等离子体，在与目标区域不同的区域产生预等离子体，不同的区域位于预激光激光的入射侧; 以及通过用主脉冲激光照射预等离子体而产生极紫外光的主脉冲激光光源。

公开(公告)号：US20120161040A1

公开(公告)日：2012-06-28

申请号：US13416884

申请日：2012-03-09

申请人： Akira Endo ,  Yoshifumi Ueno ,  Youichi Sasaki ,  Osamu Wakabayashi

发明人： Akira Endo ,  Yoshifumi Ueno ,  Youichi Sasaki ,  Osamu Wakabayashi

IPC分类号： G21K5/00

CPC分类号： G21K5/00 ,  G03F7/70033 ,  H05G2/00 ,  H05G2/003 ,  H05G2/008

摘要： An extreme ultraviolet light source apparatus, which is to generate an extreme ultraviolet light by irradiating a target with a main pulse laser light after irradiating the target with a prepulse laser light, the extreme ultraviolet light source apparatus comprises: a prepulse laser light source generating a pre-plasma by irradiating the target with the prepulse laser light while a part of the target remains, the pre-plasma being generated at a different region from a target region, the different region being located on an incident side of the prepulse laser light; and a main pulse laser light source generating the extreme ultraviolet light by irradiating the pre-plasma with the main pulse laser light.

摘要翻译： 一种极紫外光源装置，其特征在于，所述极紫外光源装置包括：前脉冲激光光源，其产生前脉冲激光光源，所述极紫外光源装置包括：前脉冲激光光源，其通过用前脉冲激光照射所述靶之后用主脉冲激光照射靶， 在一部分目标物保留的同时用前脉冲激光照射靶的预等离子体，在与目标区域不同的区域产生预等离子体，不同的区域位于预激光激光的入射侧; 以及通过用主脉冲激光照射预等离子体而产生极紫外光的主脉冲激光光源。

公开(公告)号：US08164076B2

公开(公告)日：2012-04-24

申请号：US12569194

申请日：2009-09-29

申请人： Akira Endo ,  Yoshifumi Ueno ,  Youichi Sasaki ,  Osamu Wakabayashi

发明人： Akira Endo ,  Yoshifumi Ueno ,  Youichi Sasaki ,  Osamu Wakabayashi

IPC分类号： H05G2/00

CPC分类号： G21K5/00 ,  G03F7/70033 ,  H05G2/00 ,  H05G2/003 ,  H05G2/008

摘要： An extreme ultraviolet light source apparatus, which is to generate an extreme ultraviolet light by irradiating a target with a main pulse laser light after irradiating the target with a prepulse laser light, the extreme ultraviolet light source apparatus comprises: a prepulse laser light source generating a pre-plasma by irradiating the target with the prepulse laser light while a part of the target remains, the pre-plasma being generated at a different region from a target region, the different region being located on an incident side of the prepulse laser light; and a main pulse laser light source generating the extreme ultraviolet light by irradiating the pre-plasma with the main pulse laser light.

摘要翻译： 一种极紫外光源装置，其特征在于，所述极紫外光源装置包括：前脉冲激光光源，其产生前脉冲激光光源，所述极紫外光源装置包括：前脉冲激光光源，其通过用前脉冲激光照射所述靶之后用主脉冲激光照射靶， 在一部分目标物保留的同时用前脉冲激光照射靶的预等离子体，在与目标区域不同的区域产生预等离子体，不同的区域位于预激光激光的入射侧; 以及通过用主脉冲激光照射预等离子体而产生极紫外光的主脉冲激光光源。

公开(公告)号：US20100090133A1

公开(公告)日：2010-04-15

申请号：US12569194

申请日：2009-09-29

申请人： Akira ENDO ,  Yoshifumi Ueno ,  Youichi Sasaki ,  Osamu Wakabayashi

发明人： Akira ENDO ,  Yoshifumi Ueno ,  Youichi Sasaki ,  Osamu Wakabayashi

IPC分类号： G21K5/00

CPC分类号： G21K5/00 ,  G03F7/70033 ,  H05G2/00 ,  H05G2/003 ,  H05G2/008

摘要： An extreme ultraviolet light source apparatus, which is to generate an extreme ultraviolet light by irradiating a target with a main pulse laser light after irradiating the target with a prepulse laser light, the extreme ultraviolet light source apparatus comprises: a prepulse laser light source generating a pre-plasma by irradiating the target with the prepulse laser light while a part of the target remains, the pre-plasma being generated at a different region from a target region, the different region being located on an incident side of the prepulse laser light; and a main pulse laser light source generating the extreme ultraviolet light by irradiating the pre-plasma with the main pulse laser light.

摘要翻译： 一种极紫外光源装置，其特征在于，所述极紫外光源装置包括：前脉冲激光光源，其产生前脉冲激光光源，所述极紫外光源装置包括：前脉冲激光光源，其通过用前脉冲激光照射所述靶之后用主脉冲激光照射靶， 在一部分目标物保留的同时用前脉冲激光照射靶的预等离子体，在与目标区域不同的区域产生预等离子体，不同的区域位于预激光激光的入射侧; 以及通过用主脉冲激光照射预等离子体而产生极紫外光的主脉冲激光光源。

公开(公告)号：US20130134326A1

公开(公告)日：2013-05-30

申请号：US13595312

申请日：2012-08-27

申请人： Takayuki Yabu ,  Youichi Sasaki ,  Yulaka Shiraishi ,  Shinji Nagai ,  Osamu Wakabayashi

发明人： Takayuki Yabu ,  Youichi Sasaki ,  Yulaka Shiraishi ,  Shinji Nagai ,  Osamu Wakabayashi

IPC分类号： G21K5/02 ,  B65B63/08

CPC分类号： H05G2/003 ,  G03F7/70033 ,  H05G2/005 ,  H05G2/006

摘要： A target collection device may include a collection container having an opening through which a target material is collected into the collection container, and a temperature adjuster configured to adjust a temperature of the collection container to a temperature that is equal to or higher than a melting point of the target material. The target collection device may be part of an extreme ultraviolet light generation apparatus. Methods of target collection are also provided.

摘要翻译： 目标收集装置可以包括具有开口的收集容器，目标材料通过该开口被收集到收集容器中;温度调节器，被配置为将收集容器的温度调节到等于或高于熔点的温度 的目标材料。 目标收集装置可以是极紫外光发生装置的一部分。 还提供目标收集方法。

公开(公告)号：US20120085922A1

公开(公告)日：2012-04-12

申请号：US13253460

申请日：2011-10-05

申请人： Takayuki YABU ,  Youichi Sasaki ,  Kouji Kakizaki ,  Osamu Wakabayashi

发明人： Takayuki YABU ,  Youichi Sasaki ,  Kouji Kakizaki ,  Osamu Wakabayashi

IPC分类号： G21K5/08

CPC分类号： H05G2/008 ,  H05G2/006

摘要： A chamber apparatus is used in combination with a laser apparatus. The chamber apparatus includes a chamber with an inlet. The inlet is configured for introducing a laser beam into the chamber. A target supply unit is provided to the chamber to supply a target material into the chamber. The target supply unit may electrically be isolated from the chamber. A potential control unit is connected to at least the target supply unit, and configured to control the supply of the target material.

摘要翻译： 腔室装置与激光装置结合使用。 腔室装置包括具有入口的腔室。 入口被配置为将激光束引入腔室。 将目标供应单元提供到室以将目标材料供应到室中。 目标供应单元可以电隔离室。 电势控制单元至少连接到目标供给单元，并且被配置为控制目标材料的供给。

公开(公告)号：US07420279B2

公开(公告)日：2008-09-02

申请号：US11477011

申请日：2006-06-28

申请人： Sadayuki Ohnishi ,  Kouichi Ohto ,  Tatsuya Usami ,  Noboru Morita ,  Kouji Arita ,  Ryouhei Kitao ,  Youichi Sasaki

发明人： Sadayuki Ohnishi ,  Kouichi Ohto ,  Tatsuya Usami ,  Noboru Morita ,  Kouji Arita ,  Ryouhei Kitao ,  Youichi Sasaki

IPC分类号： H01L23/48

CPC分类号： H01L21/02126 ,  C23C16/401 ,  H01L21/02137 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76801 ,  H01L2924/0002 ,  H01L2924/00

摘要： An insulating film used for an interlayer insulating film of a semiconductor device and having a low dielectric constant. The insulating film comprises a carbon containing silicon oxide (SiOCH) film which has Si—CH2 bond therein. The proportion of Si—CH2 bond (1360 cm−1) to Si—CH3 bond (1270 cm−1) in the insulating film is preferably in a range from 0.03 to 0.05 measured as a peak height ratio of FTIR spectrum. The insulating film according to the present invention has higher ashing tolerance and improved adhesion to SiO2 film, when compared with the conventional SiOCH film which only has CH3 group.

摘要翻译： 一种用于半导体器件的层间绝缘膜并具有低介电常数的绝缘膜。 绝缘膜包括其中具有Si-CH2键的含碳氧化硅（SiOCH）膜。 绝缘膜中Si-CH2键（1360cm-1）与Si-CH3键（1270cm-1）的比例优选为以FTIR光谱的峰高比测量的0.03至0.05的范围。 当与仅具有CH3基团的常规SiOCH膜相比时，根据本发明的绝缘膜具有较高的灰化耐受性和改善的与SiO 2膜的粘附性。

公开(公告)号：US20060078028A1

公开(公告)日：2006-04-13

申请号：US10963694

申请日：2004-10-13

申请人： Kouji Kakizaki ,  Youichi Sasaki ,  Naoki Kataoka

发明人： Kouji Kakizaki ,  Youichi Sasaki ,  Naoki Kataoka

IPC分类号： H01S3/22

CPC分类号： H01S3/038 ,  H01S3/036 ,  H01S3/0385 ,  H01S3/041 ,  H01S3/225

摘要： For the purpose of providing a discharge excitation type pulse laser apparatus capable of reducing disturbance of the discharge space caused by shock waves, the discharge excitation type pulse laser apparatus according to the present invention is designed for generating a pulsed main discharge by applying a high voltage between main electrodes (14, 15) including a cathode (15) and an anode (14) arranged in opposition to each other, and thereby exciting a laser gas in a discharge space (37) defined between the main electrodes to oscillate laser light (21), and characterized in that no reflector larger than a prescribed size is provided on a surface within a prescribed surface distance (LC) from the discharge space (37), and an insulating cathode insulating member (54) that is inclined such that the cathode (15) side end is highest is arranged on at least one of the upstream and downstream sides of the cathode (15) in close contact with the cathode (15).

摘要翻译： 为了提供能够减少由冲击波引起的放电空间的扰动的放电励磁型脉冲激光装置，本发明的放电励磁型脉冲激光装置被设计成通过施加高电压来产生脉冲主放电 在主电极（14,15）之间，包括阴极（15）和阳极（14），彼此相对布置，从而激励在主电极之间限定的放电空间（37）中的激光气体，以振荡激光（ 21），其特征在于，在距所述放电空间（37）的规定表面距离（LC）内的表面上设置不大于规定尺寸的反射器，以及绝缘阴极绝缘构件（54），其倾斜使得 在阴极（15）的上游侧和下游侧的至少一个上与阴极（15）紧密接触地设置阴极（15）侧端部最高。

公开(公告)号：US20060255466A1

公开(公告)日：2006-11-16

申请号：US11477011

申请日：2006-06-28

申请人： Sadayuki Ohnishi ,  Kouichi Ohto ,  Tatsuya Usami ,  Noboru Morita ,  Kouji Arita ,  Ryouhei Kitao ,  Youichi Sasaki

发明人： Sadayuki Ohnishi ,  Kouichi Ohto ,  Tatsuya Usami ,  Noboru Morita ,  Kouji Arita ,  Ryouhei Kitao ,  Youichi Sasaki

IPC分类号： H01L23/52

CPC分类号： H01L21/02126 ,  C23C16/401 ,  H01L21/02137 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76801 ,  H01L2924/0002 ,  H01L2924/00

摘要： An insulating film used for an interlayer insulating film of a semiconductor device and having a low dielectric constant. The insulating film comprises a carbon containing silicon oxide (SiOCH) film which has Si—CH2 bond therein. The proportion of Si—CH2 bond (1360 cm−1) to Si—CH3 bond (1270 cm−1) in the insulating film is preferably in a range from 0.03 to 0.05 measured as a peak height ratio of FTIR spectrum. The insulating film according to the present invention has higher ashing tolerance and improved adhesion to SiO2 film, when compared with the conventional SiOCH film which only has CH3 group.

公开(公告)号：US08710472B2

公开(公告)日：2014-04-29

申请号：US13192857

申请日：2011-07-28

申请人： Takanobu Ishihara ,  Youichi Sasaki ,  Kouji Kakizaki ,  Masahiro Inoue ,  Takayuki Yabu ,  Hideo Hoshino

发明人： Takanobu Ishihara ,  Youichi Sasaki ,  Kouji Kakizaki ,  Masahiro Inoue ,  Takayuki Yabu ,  Hideo Hoshino

IPC分类号： H05G2/00

CPC分类号： H05G2/003 ,  H05G2/005 ,  H05G2/006 ,  H05G2/008

摘要： A target output device may include: a main body for storing a target material; a nozzle unit, connected to the main body, for outputting the target material as a target; an electrode unit provided so as to face the nozzle unit; a voltage control unit that applies predetermined voltage between the electrode unit and the target material to generate electrostatic force therebetween for pulling out the target material through the nozzle unit; a pressure control unit that applies predetermined pressure to the target material; and an output control unit that causes the target to be outputted through the nozzle unit by controlling signal output timing of each of a first timing signal and a second timing signal, the first timing signal causing the voltage control unit to apply the predetermined voltage between the target material and the electrode unit at first timing, and the second timing signal causing the pressure control unit to apply the predetermined pressure to the target material at second timing.

摘要翻译： 目标输出装置可以包括：用于存储目标材料的主体; 喷嘴单元，连接到主体，用于输出目标材料作为目标; 设置成面向喷嘴单元的电极单元; 电压控制单元，其在所述电极单元和所述目标材料之间施加预定电压，以在其间产生静电力，以通过所述喷嘴单元拉出所述目标材料; 压力控制单元，其向所述目标材料施加预定压力; 以及输出控制单元，其通过控制第一定时信号和第二定时信号中的每一个的信号输出定时使所述目标通过所述喷嘴单元输出，所述第一定时信号使所述电压控制单元在所述第一定时信号和所述第二定时信号之间施加所述预定电压 目标材料和电极单元，以及第二定时信号，使得压力控制单元在第二定时将预定压力施加到目标材料。