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公开(公告)号：US20190338419A1
公开(公告)日：2019-11-07
申请号：US16382197
申请日：2019-04-12
Applicant: Applied Materials, Inc.
Inventor： James L'HEUREUX
Abstract: Embodiments disclosed herein include an abatement system and method for abating compounds produced in semiconductor processes. The abatement system includes a remote plasma source for generating an oxidizing plasma for treating exhaust gases from a deposition process performed in the processing chamber, the treatment assisting with the trapping particles in an exhaust cooling apparatus. The remote plasma source then generates a cleaning plasma for treating exhaust gases from a cleaning process performed in the processing chamber, the cleaning plasma reacting with the trapped particles in the exhaust cooling apparatus and cleaning the exhaust cooling apparatus.
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公开(公告)号：US20180221816A1
公开(公告)日：2018-08-09
申请号：US15887834
申请日：2018-02-02
Applicant: Applied Materials, Inc.
Inventor： Joseph A. VAN GOMPEL , Dustin W. HO , Zheng YUAN , James L'HEUREUX , Ryan T. DOWNEY
CPC classification number: B01D53/56 , B01D53/323 , B01D53/346 , B01D53/76 , B01D2251/202 , B01D2257/402 , B01D2258/0216 , C10G70/00 , G05D16/2066 , H01L21/67017 , Y02C20/10
Abstract: Embodiments of the present disclosure generally relate techniques for abating N2O gas present in the effluent of semiconductor manufacturing processes. In one embodiment, a method includes injecting hydrogen gas or ammonia gas into a plasma source, and an effluent containing N2O gas and the hydrogen or ammonia gas are energized and reacted to form an abated material. By using the hydrogen gas or the ammonia gas, the destruction and removal efficiency (DRE) of the N2O gas is at least 50 percent while the concentration of nitric oxide (NO) and/or nitrogen dioxide (NO2) in the abated material is substantially reduced, such as at most 5000 parts per million (ppm) by volume.
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公开(公告)号：US20240347324A1
公开(公告)日：2024-10-17
申请号：US18429086
申请日：2024-01-31
Applicant: Applied Materials, Inc.
Inventor： Ryan T. DOWNEY , Joseph T. VAN GOMPEL , James L'HEUREUX
CPC classification number: H01J37/32844 , C23C16/4412 , H01J2237/3321
Abstract: A method and system for treating effluent from a processing chamber are disclosed herein. In one example, the effluent is treated by flowing a hydrocarbon processing gas into a processing chamber having a substrate disposed therein, performing a process on the substrate using the hydrocarbon processing gas that creates organic byproducts, exhausting the organic byproducts from the processing chamber into a foreline having an abatement reaction zone, and treating the organic byproducts in the abatement reaction zone. The treating of the organic byproducts comprises mixing a disassociated oxygen-containing gas and the organic byproducts in the abatement reaction zone, and forming at least carbon monoxide and carbon dioxide from the mixture of the disassociated oxygen-containing gas and the organic byproducts.
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公开(公告)号：US20220341821A1
公开(公告)日：2022-10-27
申请号：US17240677
申请日：2021-04-26
Applicant: Applied Materials, Inc.
Inventor： Ryan T. DOWNEY , Hemant P. MUNGEKAR , James L'HEUREUX , Andreas NEUBER , Michael W. JOHNSON , Joseph A. VAN GOMPEL , Gino Gerardo CRISPIERI , Tony H. TONG , Maxime CAYER , John L. KOENIG , Mike M. HUANG
IPC: G01M99/00
Abstract: The present disclosure relates to systems and methods for detecting anomalies in a semiconductor processing system. According to certain embodiments, one or more external sensors are mounted to a sub-fab component, communicating with the processing system via a communication channel different than a communication channel utilized by the sub-fab component and providing extrinsic sensor data that the sub-fab component is not configured to provide. The extrinsic sensor data may be combined with sensor data from a processing tool of the system and/or intrinsic sensor data of the sub-fab component to form virtual sensor data. In the event the virtual data exceeds or falls below a threshold, an intervention or a maintenance signal is dispatched, and in certain embodiments, an intervention or maintenance action is taken by the system.
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公开(公告)号：US20200273682A1
公开(公告)日：2020-08-27
申请号：US16793983
申请日：2020-02-18
Applicant: Applied Materials, Inc.
Inventor： Joseph A. VAN GOMPEL , James L'HEUREUX
IPC: H01J37/32 , H01L21/67 , H01L21/3065
Abstract: One or more embodiments described herein relate to abatement systems for reducing Br2 and Cl2 in semiconductor processes. In embodiments described herein, semiconductor etch processes are performed within process chambers. Thereafter, fluorinated greenhouse gases (F-GHGs), HBr, and Cl2 gases exit the process chamber and enter a plasma reactor. Reagent gases are delivered from a reagent gas delivery apparatus to the plasma reactor to mix with the process gases. Radio frequency (RF) power is applied to the plasma reactor, which adds energy and “excites” the gases within the process chamber. When HBr is energized, it forms Br2. Br2 and Cl2 are corrosive and toxic. However, the addition of H2O in the plasma reactor quenches the Br2 and Cl2 emissions, as the H atoms recombine with the Br atoms and the Cl atoms to form HBr and HCl. HBr and HCl are readily water-soluble and removed through a wet scrubber.
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Patent Agency Ranking
公开(公告)号：US20250123186A1
公开(公告)日：2025-04-17
申请号：US18990726
申请日：2024-12-20
Applicant: Applied Materials, Inc.
Inventor： Ryan T. DOWNEY , Hemant P. MUNGEKAR , James L'HEUREUX , Andreas NEUBER , Michael W. JOHNSON , Joseph VAN GOMPEL , Gino Gerardo CRISPIERI , Tony H. TONG , Maxime CAYER , John L. KOENIG , Mike M. HUANG
IPC: G01M99/00
Abstract: The present disclosure relates to systems and methods for detecting anomalies in a semiconductor processing system. According to certain embodiments, one or more external sensors are mounted to a sub-fab component, communicating with the processing system via a communication channel different than a communication channel utilized by the sub-fab component and providing extrinsic sensor data that the sub-fab component is not configured to provide. The extrinsic sensor data may be combined with sensor data from a processing tool of the system and/or intrinsic sensor data of the sub-fab component to form virtual sensor data. In the event the virtual data exceeds or falls below a threshold, an intervention or a maintenance signal is dispatched, and in certain embodiments, an intervention or maintenance action is taken by the system.
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公开(公告)号：US20190246481A1
公开(公告)日：2019-08-08
申请号：US16206276
申请日：2018-11-30
Applicant: Applied Materials, Inc.
Inventor： Rongping WANG , Jibing ZENG , David Muquing HOU , Michael S. COX , Zheng YUAN , James L'HEUREUX
IPC: H05H1/24 , C23C16/507 , H01J37/32 , H05H1/46 , C23C16/44
Abstract: Embodiments disclosed herein include a plasma source, an abatement system and a vacuum processing system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source includes a dielectric tube and a coil antenna surrounding the tube. The coil antenna includes a plurality of turns, and at least one turn is shorted. Selectively shorting one or more turns of the coil antenna helps reduce the inductance of the coil antenna, allowing higher power to be supplied to the coil antenna that covers more processing volume. Higher power supplied to the coil antenna and larger processing volume lead to an improved DRE.
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公开(公告)号：US20140079514A1
公开(公告)日：2014-03-20
申请号：US14029307
申请日：2013-09-17
Applicant: Applied Materials, Inc.
Inventor： Alexander S. POLYAK , James L'HEUREUX , Christopher T. LANE , Susanne SCHLAEFER , Juergen HENRICH , Josef Thomas HOOG , Calvin R. AUGASON
IPC: H01L21/677
CPC classification number: H01L21/677 , H01L21/67201
Abstract: Methods and apparatus for transferring one or more substrates from a first pressure environment to a second pressure environment is provided. In one embodiment, a load lock chamber is provided. The load lock chamber comprises a first circular housing, and a second circular housing disposed within and movable relative to the first circular housing, one of the first circular housing or the second circular housing comprising a plurality of discrete regions, wherein at least a portion of the plurality of discrete regions are in selective fluid communication with one of at least two vacuum pumps based on the angular position of the second circular housing relative to the first circular housing.
Abstract translation: 提供了将一个或多个基板从第一压力环境转移到第二压力环境的方法和装置。 在一个实施例中，提供了一种加载锁定室。 负载锁定室包括第一圆形壳体和设置在第一圆形壳体内并可相对于第一圆形壳体移动的第二圆形壳体，第一圆形壳体或第二圆形壳体中的一个包括多个离散区域，其中至少一部分 基于第二圆形壳体相对于第一圆形壳体的角位置，多个离散区域与至少两个真空泵中的一个选择性流体连通。
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公开(公告)号：US20240077890A1
公开(公告)日：2024-03-07
申请号：US17901670
申请日：2022-09-01
Applicant: Applied Materials, Inc.
Inventor： Maxime CAYER , John L. KOENIG , Tony H. TONG , Shaun W. CRAWFORD , James L'HEUREUX , Andreas NEUBER , Ching-Hong HSIEH
IPC: G05D7/06 , B24B37/005 , B24B37/34 , G05B19/4155
CPC classification number: G05D7/0652 , B24B37/005 , B24B37/34 , G05B19/4155 , G05B2219/37371
Abstract: The present disclosure generally relates to methods and system used to collect waste fluids. A system controller is disclosed to control the operation of at least a portion of the system. The controller has a CPU. The fabrication facility includes a first processing system having fluid dispensed therein for processing a material on a part. A first drain is configured to collect the processing fluid as waste fluid after processing the part. The fabrication facility also includes a waste collection system fluidly coupled to the system drain. The waste collection system has two or more valves configured to couple the system drain and two or more facility drains. Each facility drain is uniquely coupled to one of the two or more valves. The CPU is configured to operate the valves between an open and a closed state in response to the fluid entering the system drain.
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公开(公告)号：US20240068093A1
公开(公告)日：2024-02-29
申请号：US17896025
申请日：2022-08-25
Applicant: Applied Materials, Inc.
Inventor： Ryan T. DOWNEY , James L'HEUREUX , Rony David MATHEW
CPC classification number: C23C16/4412 , H01J37/3244 , H01J37/32834
Abstract: A system and method for controlling pressure in a foreline of a processing system are disclosed herein that reduce variation in foreline pressure. In one example, a processing system is provided that includes a first process chamber, a first pump, a foreline, and a first foreline pressure control system. The first pump has an inlet and an outlet. The inlet of the first pump coupled to an exhaust port of the first process chamber. The foreline is coupled to the outlet of the first pump. The first foreline pressure control system is fluidly coupled to the foreline downstream of the first pump. The first foreline pressure control system is operable to control a pressure in the foreline independent from operation of the first pump.
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