公开(公告)号：US20160254181A1

公开(公告)日：2016-09-01

申请号：US14634512

申请日：2015-02-27

Applicant: Applied Materials, Inc.

Inventor： Deenesh Padhi ,  Srinivas Guggilla ,  Alexandros T. Demos ,  Bhaskar Kumar ,  He Ren ,  Priyanka Dash

IPC: H01L21/768 ,  H01L21/02

CPC classification number: H01L21/76813 ,  H01L21/02458 ,  H01L21/76808 ,  H01L21/76831 ,  H01L21/76862 ,  H01L23/53295

Abstract: A method of forming features in a dielectric layer is described. A via, trench or a dual-damascene structure may be present in the dielectric layer prior to depositing a conformal aluminum nitride layer. The conformal aluminum nitride layer is configured to serve as a barrier to prevent diffusion across the barrier. The methods of forming the aluminum nitride layer involve the alternating exposure to two precursor treatments (like ALD) to achieve high conformality. The high conformality of the aluminum nitride barrier layer enables the thickness to be reduced and the effective conductivity of the subsequent gapfill metal layer to be increased.

Abstract translation: 描述了在电介质层中形成特征的方法。 通孔，沟槽或双镶嵌结构可能在沉积保形氮化铝层之前存在于电介质层中。 保形氮化铝层被配置为用作屏障以防止穿过屏障的扩散。 形成氮化铝层的方法涉及交替暴露于两种前体处理（如ALD）以实现高共形性。 氮化铝阻挡层的高共形度使得能够减小厚度，并且随后的间隙填充金属层的有效导电性增加。

公开(公告)号：US09793108B2

公开(公告)日：2017-10-17

申请号：US14750778

申请日：2015-06-25

Applicant: Applied Materials, Inc.

Inventor： He Ren ,  Mehul B. Naik ,  Deenesh Padhi ,  Priyanka Dash ,  Bhaskar Kumar ,  Alexandros T. Demos

IPC: H01L21/02 ,  H01L21/31 ,  C23C16/36 ,  H01L21/3105 ,  C23C16/04 ,  C23C16/48 ,  C23C16/56

CPC classification number: H01L21/02126 ,  C23C16/045 ,  C23C16/36 ,  C23C16/482 ,  C23C16/56 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02359 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831

Abstract: A method for sealing porous low-k dielectric films is provided. The method comprises exposing a substrate to UV radiation and a first reactive gas, wherein the substrate has an open feature defined therein, the open feature defined by a porous low-k dielectric layer and a conductive material, wherein the porous low-k dielectric layer is a silicon and carbon containing material and selectively forming a pore sealing layer in the open feature on exposed surfaces of the porous low-k dielectric layer using UV assisted photochemical vapor deposition.

公开(公告)号：US09646876B2

公开(公告)日：2017-05-09

申请号：US14634512

申请日：2015-02-27

Applicant: Applied Materials, Inc.

Inventor： Deenesh Padhi ,  Srinivas Guggilla ,  Alexandros T. Demos ,  Bhaskar Kumar ,  He Ren ,  Priyanka Dash

IPC: H01L21/44 ,  H01L21/768 ,  H01L21/02 ,  H01L23/532

CPC classification number: H01L21/76813 ,  H01L21/02458 ,  H01L21/76808 ,  H01L21/76831 ,  H01L21/76862 ,  H01L23/53295

Abstract: A method of forming features in a dielectric layer is described. A via, trench or a dual-damascene structure may be present in the dielectric layer prior to depositing a conformal aluminum nitride layer. The conformal aluminum nitride layer is configured to serve as a barrier to prevent diffusion across the barrier. The methods of forming the aluminum nitride layer involve the alternating exposure to two precursor treatments (like ALD) to achieve high conformality. The high conformality of the aluminum nitride barrier layer enables the thickness to be reduced and the effective conductivity of the subsequent gapfill metal layer to be increased.

公开(公告)号：US10600624B2

公开(公告)日：2020-03-24

申请号：US16230766

申请日：2018-12-21

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit Ghosh ,  Sanjeev Baluja ,  Mayur G. Kulkarni ,  Shailendra Srivastava ,  Tejas Ulavi ,  Yusheng Alvin Zhou ,  Amit Kumar Bansal ,  Priyanka Dash ,  Zhijun Jiang ,  Ganesh Balasubramanian ,  Qiang Ma ,  Kaushik Alayavalli ,  Yuxing Zhang ,  Daniel Hwung ,  Shawyon Jafari

IPC: H01J37/32 ,  C23C16/52 ,  C23C16/455 ,  C23C16/40 ,  C23C16/44 ,  C23C16/50 ,  C23C16/458

Abstract: Systems and methods for depositing a film in a PECVD chamber while reducing residue buildup in the chamber. In some embodiments disclosed herein, a processing chamber includes a chamber body, a substrate support, a showerhead, and one or more heaters configured to heat the showerhead. In some embodiments, the processing chamber includes a controller.

公开(公告)号：US09659765B2

公开(公告)日：2017-05-23

申请号：US14799988

申请日：2015-07-15

Applicant: Applied Materials, Inc.

Inventor： Kang Sub Yim ,  Mahendra Chhabra ,  Kelvin Chan ,  Alexandros T. Demos ,  Priyanka Dash

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/027

CPC classification number: H01L21/02203 ,  H01L21/02126 ,  H01L21/0272 ,  H01L21/3105

Abstract: Embodiments described herein generally relate to methods for processing a dielectric film on a substrate with UV energy. In one embodiment, a precursor film is deposited on the substrate, and the precursor film includes a plurality of porogen molecules. The precursor film is first exposed to UV energy at a first temperature to initiate a cross-linking process. After a first predetermined time, the temperature of the precursor film is increased to a second temperature for a second predetermined time to remove porogen molecules and to continue the cross-linking process. The resulting film is a porous low-k dielectric film having improved elastic modulus and hardness.

公开(公告)号：US20160300757A1

公开(公告)日：2016-10-13

申请号：US15083977

申请日：2016-03-29

Applicant: Applied Materials, Inc.

Inventor： Priyanka Dash ,  Deenesh Padhi

IPC: H01L21/768

CPC classification number: H01L21/76831 ,  H01L21/02167 ,  H01L21/02219 ,  H01L21/02277 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826

Abstract: A method of forming features in a low-k dielectric layer on a patterned substrate is described. A via, trench or a dual damascene structure may be formed in the low-k dielectric layer. Patterning the low-k dielectric layer may also increase the dielectric constant. The patterned substrate is processed by shining UV-light on the low-k dielectric layer while exposing the low-k dielectric layer to a carbon-and-hydrogen-containing precursor to restore or lower the dielectric constant. Then, a conformal hermetic layer is formed on the low-k dielectric layer. The conformal hermetic layer is configured to keep water and contaminants out of the low-k dielectric layer during later processing and during the lifespan of the completed device.

Abstract translation: 描述了在图案化衬底上的低k电介质层中形成特征的方法。 可以在低k电介质层中形成通孔，沟槽或双镶嵌结构。 对低k电介质层进行构图也可以增加介电常数。 通过在低k电介质层上照射紫外光，同时将低k电介质层暴露于含碳 - 氢的前体以恢复或降低介电常数来处理图案化衬底。 然后，在低k电介质层上形成保形密封层。 保形密封层被配置为在后续处理期间和在完成的装置的寿命期间将水和污染物保持在低k电介质层之外。