公开(公告)号：US11658218B2

公开(公告)日：2023-05-23

申请号：US17668992

申请日：2022-02-10

申请人： Applied Materials, Inc.

发明人： Yongjing Lin ,  Karla M Bernal Ramos ,  Shih Chung Chen ,  Yixiong Yang ,  Lin Dong ,  Steven C. H. Hung ,  Srinivas Gandikota

IPC分类号： H01L29/40 ,  H01L29/51 ,  H01L29/78 ,  H01L21/02 ,  H01L21/28

CPC分类号： H01L29/408 ,  H01L21/0228 ,  H01L21/02153 ,  H01L21/28158 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7851

摘要： Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAlC).

公开(公告)号：US20230010499A1

公开(公告)日：2023-01-12

申请号：US17859777

申请日：2022-07-07

申请人： Applied Materials, Inc.

发明人： Brian K. Kirkpatrick ,  Steven C. H. Hung ,  Malcolm J. Bevan

IPC分类号： H01L21/02 ,  H01L21/28 ,  H01L21/67 ,  H01L21/687

摘要： Exemplary integrated cluster tools may include a factory interface including a first transfer robot. The tools may include a wet clean system coupled with the factory interface at a first side of the wet clean system. The tools may include a load lock chamber coupled with the wet clean system at a second side of the wet clean system opposite the first side of the wet clean system. The tools may include a first transfer chamber coupled with the load lock chamber. The first transfer chamber may include a second transfer robot. The tools may include a thermal treatment chamber coupled with the first transfer chamber. The tools may include a second transfer chamber coupled with the first transfer chamber. The second transfer chamber may include a third transfer robot. The tools may include a metal deposition chamber coupled with the second transfer chamber.

公开(公告)号：US11552177B2

公开(公告)日：2023-01-10

申请号：US17013161

申请日：2020-09-04

申请人： Applied Materials, Inc.

发明人： Srinivas Gandikota ,  Steven C. H. Hung ,  Mandyam Sriram ,  Jacqueline S. Wrench ,  Yixiong Yang ,  Yong Yang

IPC分类号： H01L29/49 ,  H01L29/51 ,  H01L29/40 ,  H01L21/28 ,  H01L21/285

摘要： Metal gate stacks and integrated methods of forming metal gate stacks are disclosed. Some embodiments comprise NbN as a PMOS work function material at a thickness in a range of greater than or equal to 5 Å to less than or equal to 50 Å. The PMOS work function material comprising NbN has an effective work function of greater than or equal to 4.75 eV. Some embodiments comprise HfO2 as a high-κ metal oxide layer. Some embodiments provide improved PMOS bandedge performance evidenced by improved flatband voltage. Some embodiments exclude transition metal niobium nitride materials as work function materials.

公开(公告)号：US20210398814A1

公开(公告)日：2021-12-23

申请号：US17348081

申请日：2021-06-15

申请人： Applied Materials, Inc.

发明人： Steven C. H. Hung ,  Benjamin Colombeau ,  Abhishek Dube ,  Sheng-Chin Kung ,  Patricia M. Liu ,  Malcolm J. Bevan ,  Johanes F. Swenberg

IPC分类号： H01L21/28 ,  H01L21/02

摘要： Processing methods may be performed to produce semiconductor structures. The methods may include forming a silicon layer over a semiconductor substrate. The forming may include forming a silicon layer incorporating a dopant. The methods may include oxidizing a portion of the silicon layer while maintaining a portion of the silicon layer in contact with the semiconductor substrate. The oxidizing may drive a portion of the dopant through the silicon layer and into the semiconductor substrate.

公开(公告)号：US09437640B2

公开(公告)日：2016-09-06

申请号：US14481038

申请日：2014-09-09

申请人： Applied Materials, Inc.

发明人： Sherry Mings ,  Patricia M. Liu ,  Steven C. H. Hung

IPC分类号： H01L27/14 ,  H01L27/146

CPC分类号： H01L27/14643 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14689

摘要： Backside illuminated sensors and methods of manufacture are described. Specifically, a backside illuminated sensor with a dipole modulating layer near the photodiode is described.

摘要翻译： 描述背面照明传感器和制造方法。 具体来说，描述了在光电二极管附近具有偶极子调制层的背面照明传感器。

公开(公告)号：US11996455B2

公开(公告)日：2024-05-28

申请号：US18130201

申请日：2023-04-03

申请人： Applied Materials, Inc.

发明人： Yongjing Lin ,  Karla M Bernal Ramos ,  Shih Chung Chen ,  Yixiong Yang ,  Lin Dong ,  Steven C. H. Hung ,  Srinivas Gandikota

IPC分类号： H01L29/40 ,  H01L21/02 ,  H01L21/28 ,  H01L29/51 ,  H01L29/78

CPC分类号： H01L29/408 ,  H01L21/02153 ,  H01L21/0228 ,  H01L21/28158 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7851

摘要： Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAlC).

公开(公告)号：US11923441B2

公开(公告)日：2024-03-05

申请号：US17888894

申请日：2022-08-16

申请人： Applied Materials, Inc.

发明人： Steven C. H. Hung ,  Benjamin Colombeau ,  Andy Lo ,  Byeong Chan Lee ,  Johanes F. Swenberg ,  Theresa Kramer Guarini ,  Malcolm J. Bevan

IPC分类号： H01L29/66 ,  C23C8/02 ,  C23C8/16 ,  C23C8/80 ,  C23C16/455 ,  C23C16/56 ,  C30B29/06 ,  C30B29/52 ,  H01L21/02 ,  H01L29/423

CPC分类号： H01L29/6681 ,  C23C8/02 ,  C23C8/16 ,  C23C8/80 ,  C23C16/45536 ,  C23C16/56 ,  C30B29/06 ,  C30B29/52 ,  H01L21/022 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/0228 ,  H01L29/42392 ,  H01L29/6653

摘要： Described is a method of manufacturing a gate-all-around electronic device. The method includes forming a thermal oxide layer though an enhanced in situ steam generation process in combination with atomic layer deposition of a low-κ layer. The thin thermal oxide layer passivates the interface between the silicon layer and the dielectric layer of the GAA. A passivation process after the deposition of the low-κ layer reduces the bulk trap and enhances the breakdown performance of the GAA transistor.

公开(公告)号：US11417517B2

公开(公告)日：2022-08-16

申请号：US16951858

申请日：2020-11-18

申请人： Applied Materials, Inc.

发明人： Srinivas Gandikota ,  Yixiong Yang ,  Jacqueline Samantha Wrench ,  Yong Yang ,  Steven C. H. Hung

IPC分类号： H01L21/02 ,  H01L21/28 ,  H01L21/67

摘要： A method of forming a high-K dielectric cap layer on a semiconductor structure formed on a substrate includes depositing the high-K dielectric cap layer on the semiconductor structure, depositing a sacrificial silicon cap layer on the high-K dielectric cap layer, performing a post cap anneal process to harden and densify the as-deposited high-K dielectric cap layer, and removing the sacrificial silicon cap layer.

公开(公告)号：US11289579B2

公开(公告)日：2022-03-29

申请号：US17034116

申请日：2020-09-28

申请人： Applied Materials, Inc.

发明人： Yongjing Lin ,  Karla M Bernal Ramos ,  Shih Chung Chen ,  Yixiong Yang ,  Lin Dong ,  Steven C. H. Hung ,  Srinivas Gandikota

IPC分类号： H01L29/40 ,  H01L29/51 ,  H01L29/78 ,  H01L21/02 ,  H01L21/28

摘要： Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAlC).

公开(公告)号：US11189479B2

公开(公告)日：2021-11-30

申请号：US16865514

申请日：2020-05-04

申请人： Applied Materials, Inc.

发明人： Benjamin Colombeau ,  Johanes F. Swenberg ,  Steven C. H. Hung

IPC分类号： H01L21/469 ,  H01L23/58 ,  H01L21/02 ,  H01L21/762 ,  H01L21/768

摘要： A method of forming an electronic device is disclosed. The method comprises forming a barrier layer on a silicon layer, and depositing a silicon oxide layer on the barrier layer. The formation of the barrier layer on the silicon layer minimizes parasitic oxidation of the underlying silicon layer and minimizes defects in the silicon layer.