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33 条记录 (耗时 0.053 秒)

    Method of forming pattern
    1.
    发明授权
    Method of forming pattern 有权
    形成图案的方法

    公开(公告)号：US08808973B2

    公开(公告)日：2014-08-19

    申请号：US13402400

    申请日：2012-02-22

    申请人： Satoshi Mikoshiba ,  Koji Asakawa ,  Hiroko Nakamura ,  Shigeki Hattori ,  Atsushi Hieno ,  Tsukasa Azuma ,  Yuriko Seino ,  Masahiro Kanno

    发明人： Satoshi Mikoshiba ,  Koji Asakawa ,  Hiroko Nakamura ,  Shigeki Hattori ,  Atsushi Hieno ,  Tsukasa Azuma ,  Yuriko Seino ,  Masahiro Kanno

    IPC分类号： G03F7/26

    CPC分类号： H01L21/0337 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0757 ,  G03F7/165 ,  G03F7/26 ,  H01L21/3086

    摘要： According to one embodiment, there is provided a method of forming a pattern including forming a polymer layer on a substrate, the polymer layer including a first and second regions, selectively irradiating either of the first and second regions with energy rays or irradiating the first and second regions with energy rays under different conditions to cause a difference in surface free energy between the first and second regions, thereafter, forming a block copolymer layer on the polymer layer, and causing microphase separation in the block copolymer layer to simultaneously form first and second microphase-separated structures on the first and second regions, respectively.

    摘要翻译： 根据一个实施方案，提供了一种形成图案的方法，包括在基底上形成聚合物层，聚合物层包括第一和第二区域，用能量射线选择性地照射第一和第二区域中的任一个，或者照射第一和第二区域 在不同条件下具有能量射线的第二区域引起第一和第二区域之间的表面自由能的差异，此后在聚合物层上形成嵌段共聚物层，并且使嵌段共聚物层中的微相分离同时形成第一和第二 分别在第一和第二区域上的微相分离结构。

    Independently controllable shutters and variable area apertures for off axis illumination
    5.
    发明授权
    Independently controllable shutters and variable area apertures for off axis illumination 失效
    独立可控的百叶窗和用于离轴照明的可变面积孔

    公开(公告)号：US5712698A

    公开(公告)日：1998-01-27

    申请号：US610770

    申请日：1996-03-04

    申请人： Bernhard Poschenrieder ,  Takashi Sato ,  Tsukasa Azuma

    发明人： Bernhard Poschenrieder ,  Takashi Sato ,  Tsukasa Azuma

    IPC分类号： G03F7/20 ,  H01L21/027 ,  G03B27/72

    CPC分类号： G03F7/70091 ,  G03F7/701

    摘要： New types of apertures to vary the size and shape of the aperture area without the need to change the whole aperture plate in off axis lithography. The off axis illumination apertures allow the size and shape of apertures to be changed without having to change the aperture plates for each step in the lithographic process. The aperture plate is fitted with simple shutter mechanisms that allow the ready adjustment of the aperture openings.

    摘要翻译： 新型的孔径，以改变开口面积的大小和形状，而不需要在离轴光刻中改变整个孔板。 离轴照明孔允许改变孔的尺寸和形状，而不必改变光刻工艺中每个步骤的孔板。 孔板配有简单的快门机构，允许准备调整孔径开口。

    Method of forming film, method of forming pattern, and method of manufacturing semiconductor device
    6.
    发明授权
    Method of forming film, method of forming pattern, and method of manufacturing semiconductor device 有权
    薄膜形成方法，成型方法以及制造半导体器件的方法

    公开(公告)号：US09108342B2

    公开(公告)日：2015-08-18

    申请号：US13414754

    申请日：2012-03-08

    申请人： Tsukasa Azuma

    发明人： Tsukasa Azuma

    IPC分类号： H01L21/302 ,  B29C33/38 ,  G03F7/00 ,  H01L21/67 ,  B82Y10/00 ,  B82Y40/00

    CPC分类号： B29C33/3842 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/67092

    摘要： According to an embodiment, a method of forming a film is provided. In the method of forming a film, a reversed pattern which is the reverse of a desired layout pattern is formed on a first substrate. Subsequently, a pattern material of the desired layout pattern is supplied to a second substrate as a reversal material. Thereafter, the reversed pattern is brought into contact with the reversal material such that the reversed pattern faces the reversal material, so that the reversed pattern is filled with the reversal material by a capillary phenomenon.

    摘要翻译： 根据实施例，提供了一种形成膜的方法。 在形成膜的方法中，在第一基板上形成与期望的布局图案相反的反转图案。 随后，将所需布局图案的图案材料作为反转材料提供给第二基板。 此后，使反转图案与反转材料接触，使得反转图案面向反转材料，使得反转图案通过毛细管现象被反转材料填充。

    High Cr ferritic heat resistance steel
    8.
    发明授权
    High Cr ferritic heat resistance steel 有权
    高铬铁素体耐热钢

    公开(公告)号：US07820098B2

    公开(公告)日：2010-10-26

    申请号：US10181318

    申请日：2001-08-16

    申请人： Masahiko Morinaga ,  Yoshinori Murata ,  Tsukasa Azuma ,  Kazuhiro Miki ,  Tohru Ishiguro ,  Ryokichi Hashizume

    发明人： Masahiko Morinaga ,  Yoshinori Murata ,  Tsukasa Azuma ,  Kazuhiro Miki ,  Tohru Ishiguro ,  Ryokichi Hashizume

    IPC分类号： C22C38/30 ,  C22C38/22 ,  C22C38/24 ,  C22C38/26

    CPC分类号： C22C38/005 ,  C22C38/001 ,  C22C38/22 ,  C22C38/24 ,  C22C38/26 ,  C22C38/30 ,  C22C38/32

    摘要： In the thermal power system, the electricity production efficiency may be improved by providing turbine members having the improved high temperature characteristic over the corresponding prior art turbine members. Turbine members may be provided by using high resistant steels composed of any one or ones selected from the group consisting of the components, including 0.08 to 0.13% of carbon (C), 8.5 to 9.8% of chromium (Cr), 0 to 1.5% of molybdenum (Mo), 0.10 to 0.25% of vanadium (V), 0.03 to 0.08% of niobium (Nb), 0.2 to 5.0% of tungsten (W), 1.5 to 6.0% of cobalt (Co), 0.002 to 0.015% of boron (B), 0.015 to 0.025% of nitrogen (N), and optionally, 0.01 to 3.0% of rhenium (Re), 0.1 to 0.50% of silicon (Si), 0.1 to 1.0% of manganese (Mo), 0.05 to 0.8% of nickel (Ni) and 0.1 to 1.3% of cupper. The long-time creep strength may be improved by using those high resistant steels for turbine rotors, turbine members and the like, which enable the steam temperature to be higher, thereby improving the electricity production efficiency in the thermal power system. The accelerated creep inhibitor parameter is provided for controlling the reduction in the creep strength so that the high creep strength can be maintained for the extended period of time.

    摘要翻译： 在火力发电系统中，通过提供相对于现有技术的涡轮机构件具有改进的高温特性的涡轮机构，可以提高电力生产效率。 涡轮机构可以通过使用由选自组分组成的组中的任何一种或其组成的高抗性钢提供，包括碳（C）的0.08〜0.13％，铬（Cr）的8.5〜9.8％，铬（Cr）的0〜1.5％ 的钼（Mo），0.10〜0.25％的钒（V），0.03〜0.08％的铌（Nb），0.2〜5.0％的钨（W），1.5〜6.0％的钴（Co），0.002〜0.015％ 的硼（B），0.015〜0.025％的氮（N）和任选的0.01〜3.0％的铼（Re），0.1〜0.50％的硅（Si），0.1〜1.0％的锰（Mo） 至0.8％的镍（Ni）和0.1至1.3％的铜。 可以通过使用用于涡轮转子，涡轮机构等的高耐用性钢来提高长时间的蠕变强度，这使得蒸汽温度更高，从而提高火力发电系统的电力生产效率。 提供了加速蠕变抑制剂参数，用于控制蠕变强度的降低，使得能够在较长时间内保持高蠕变强度。

    Template manufacturing method, semiconductor device manufacturing method and template
    9.
    发明授权
    Template manufacturing method, semiconductor device manufacturing method and template 有权
    模板制造方法，半导体器件制造方法和模板

    公开(公告)号：US08609014B2

    公开(公告)日：2013-12-17

    申请号：US13150961

    申请日：2011-06-01

    申请人： Tsukasa Azuma ,  Tatsuhiko Higashiki ,  Kyoichi Suguro

    发明人： Tsukasa Azuma ,  Tatsuhiko Higashiki ,  Kyoichi Suguro

    IPC分类号： B29C67/20

    CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

    摘要： According to one embodiment, a template manufacturing method is a method for manufacturing a template for use in an imprint processing in which a pattern having irregularities are formed on a principal surface, and the pattern is brought into contact with a resist member formed on a substrate to be processed, to transfer the pattern to the resist member, the method including implanting charged particles at least into the bottoms of concave portions of the template.

    摘要翻译： 根据一个实施例，模板制造方法是用于制造在压印处理中使用的模板的方法，其中在主表面上形成具有凹凸的图案，并且图案与形成在基板上的抗蚀剂部件接触 要被处理以将图案转印到抗蚀剂构件上，该方法包括将带电粒子至少注入到模板的凹部的底部中。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    10.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
    制造半导体器件的方法

    公开(公告)号：US20100227262A1

    公开(公告)日：2010-09-09

    申请号：US12696142

    申请日：2010-01-29

    申请人： Katsutoshi KOBAYASHI ,  Daizo Muto ,  Koutarou Sho ,  Tsukasa Azuma

    发明人： Katsutoshi KOBAYASHI ,  Daizo Muto ,  Koutarou Sho ,  Tsukasa Azuma

    IPC分类号： G03F7/20

    CPC分类号： G03F7/162 ,  G03F7/70341

    摘要： A method for manufacturing a semiconductor device, includes: supplying a liquid resist containing a water-repellent additive to a surface of a rotating semiconductor wafer fixed to a rotary support to form a resist film to a design thickness on the surface of the semiconductor wafer; spin drying the resist film; bringing a liquid into contact with the resist film and exposing the resist film through the liquid after the spin drying; developing the resist film to form a resist pattern; and performing processing on the semiconductor wafer.A condition for adjusting contact angle between the resist film surface and the liquid is controlled so that the contact angle assumes a desired value, the condition including at least one selected from the group consisting of spin drying time for the resist film, resist temperature during the supplying, pressure of an atmosphere above the semiconductor wafer surface, and humidity of the atmosphere above the semiconductor wafer surface.

    摘要翻译： 一种半导体装置的制造方法，其特征在于，包括：向固定于旋转支撑体的旋转半导体晶片的表面供给含有防水添加剂的液体抗蚀剂，以形成半导体晶片表面的设计厚度的抗蚀剂膜; 旋转干燥抗蚀膜; 使液体与抗蚀剂膜接触，并且在旋转干燥后使抗蚀膜暴露于液体中; 显影抗蚀剂膜以形成抗蚀剂图案; 并对半导体晶片进行处理。 控制用于调节抗蚀剂膜表面和液体之间的接触角的条件使得接触角呈现期望值，该条件包括选自抗蚀剂膜的旋转干燥时间，抗蚀剂膜的抗蚀剂温度 提供半导体晶片表面之上的气氛的压力，以及半导体晶片表面之上的气氛的湿度。