公开(公告)号：US20070227231A1

公开(公告)日：2007-10-04

申请号：US11678524

申请日：2007-02-23

申请人： Bon-Woong Koo ,  Ziwei Fang ,  Ludovic Godet ,  Vikram Singh ,  Vassilis Vourloumis ,  Bernard Lindsay

发明人： Bon-Woong Koo ,  Ziwei Fang ,  Ludovic Godet ,  Vikram Singh ,  Vassilis Vourloumis ,  Bernard Lindsay

IPC分类号： G01N27/26 ,  G01N33/00

CPC分类号： H01J37/32422 ,  H01J37/32935

摘要： A time-of-flight ion sensor for monitoring ion species in a plasma includes a housing. A drift tube is positioned in the housing. An extractor electrode is positioned in the housing at a first end of the drift tube so as to attract ions from the plasma. A plurality of electrodes is positioned at a first end of the drift tube proximate to the extractor electrode. The plurality of electrodes is biased so as to cause at least a portion of the attracted ions to enter the drift tube and to drift towards a second end of the drift tube. An ion detector is positioned proximate to the second end of the drift tube. The ion detector detects arrival times associated with the at least the portion of the attracted ions.

摘要翻译： 用于监测等离子体中的离子种类的飞行时间离子传感器包括壳体。 漂移管位于外壳中。 提取器电极位于漂移管的第一端处的壳体中，以便从等离子体吸引离子。 多个电极位于漂移管的靠近提取器电极的第一端。 多个电极被偏置，以使至少一部分吸引的离子进入漂移管并漂移到漂移管的第二端。 离子检测器位于漂移管的第二端附近。 离子检测器检测与吸引的离子的至少一部分相关联的到达时间。

公开(公告)号：US20070210248A1

公开(公告)日：2007-09-13

申请号：US11371907

申请日：2006-03-10

申请人： Bon-Woong Koo ,  Ludovic Godet ,  Vassilis Vourloumis ,  Vikram Singh ,  Ziwei Fang

发明人： Bon-Woong Koo ,  Ludovic Godet ,  Vassilis Vourloumis ,  Vikram Singh ,  Ziwei Fang

IPC分类号： H01J49/40

CPC分类号： H01J49/40 ,  H01J37/32935

摘要： An in-situ ion sensor is disclosed for monitoring ion species in a plasma chamber. The ion sensor may comprise: a drift tube; an extractor electrode and a plurality of electrostatic lenses disposed at a first end of the drift tube, wherein the extractor electrode is biased to attract ions from a plasma in the plasma chamber, and wherein the plurality of electrostatic lenses cause at least one portion of the attracted ions to enter the drift tube and drift towards a second end of the drift tube within a limited divergence angle; an ion detector disposed at the second end of the drift tube, wherein the ion detector detects arrival times associated with the at least one portion of the attracted ions; and a housing for the extractor, the plurality of electrostatic lenses, the drift tube, and the ion detector, wherein the housing accommodates differential pumping between the ion sensor and the plasma chamber.

摘要翻译： 公开了用于监测等离子体室中的离子种类的原位离子传感器。 离子传感器可以包括：漂移管; 提取器电极和设置在漂移管的第一端处的多个静电透镜，其中所述提取器电极被偏置以从所述等离子体室中的等离子体吸引离子，并且其中所述多个静电透镜引起所述静电透镜的至少一部分 吸引离子进入漂移管并在有限的发散角内漂移到漂移管的第二端; 设置在所述漂移管的第二端处的离子检测器，其中所述离子检测器检测与所述吸引离子的所述至少一部分相关联的到达时间; 以及用于提取器，多个静电透镜，漂移管和离子检测器的壳体，其中壳体容纳离子传感器和等离子体室之间的差分泵浦。

公开(公告)号：US07476849B2

公开(公告)日：2009-01-13

申请号：US11371907

申请日：2006-03-10

申请人： Bon-Woong Koo ,  Ludovic Godet ,  Vassilis Panayotis Vourloumis ,  Vikram Singh ,  Ziwei Fang

发明人： Bon-Woong Koo ,  Ludovic Godet ,  Vassilis Panayotis Vourloumis ,  Vikram Singh ,  Ziwei Fang

IPC分类号： H01J49/40 ,  G01N27/26 ,  G01N33/00

CPC分类号： H01J49/40 ,  H01J37/32935

摘要： An in-situ ion sensor is disclosed for monitoring ion species in a plasma chamber. The ion sensor may comprise: a drift tube; an extractor electrode and a plurality of electrostatic lenses disposed at a first end of the drift tube, wherein the extractor electrode is biased to attract ions from a plasma in the plasma chamber, and wherein the plurality of electrostatic lenses cause at least one portion of the attracted ions to enter the drift tube and drift towards a second end of the drift tube within a limited divergence angle; an ion detector disposed at the second end of the drift tube, wherein the ion detector detects arrival times associated with the at least one portion of the attracted ions; and a housing for the extractor, the plurality of electrostatic lenses, the drift tube, and the ion detector, wherein the housing accommodates differential pumping between the ion sensor and the plasma chamber.

摘要翻译： 公开了用于监测等离子体室中的离子种类的原位离子传感器。 离子传感器可以包括：漂移管; 提取器电极和设置在漂移管的第一端处的多个静电透镜，其中所述提取器电极被偏置以从所述等离子体室中的等离子体吸引离子，并且其中所述多个静电透镜引起所述静电透镜的至少一部分 吸引离子进入漂移管并在有限的发散角内漂移到漂移管的第二端; 设置在所述漂移管的第二端处的离子检测器，其中所述离子检测器检测与所述吸引离子的所述至少一部分相关联的到达时间; 以及用于提取器，多个静电透镜，漂移管和离子检测器的壳体，其中壳体容纳离子传感器和等离子体室之间的差分泵浦。

公开(公告)号：US20090283670A1

公开(公告)日：2009-11-19

申请号：US12272537

申请日：2008-11-18

申请人： Bon-Woong Koo ,  Ludovic Godet ,  Vassilis Panayotis Vourloumis ,  Vikram Singh ,  Ziwei Fang

发明人： Bon-Woong Koo ,  Ludovic Godet ,  Vassilis Panayotis Vourloumis ,  Vikram Singh ,  Ziwei Fang

IPC分类号： B01D59/44 ,  H01J49/00

CPC分类号： H01J37/32422 ,  H01J37/32935

摘要： A time-of-flight ion sensor for monitoring ion species in a plasma includes a housing. A drift tube is positioned in the housing. An extractor electrode is positioned in the housing at a first end of the drift tube so as to attract ions from the plasma. A plurality of electrodes is positioned at a first end of the drift tube proximate to the extractor electrode. The plurality of electrodes is biased so as to selectively attract ions to enter the drift tube and to drift towards a second end of the drift tube. An ion detector is positioned proximate to the second end of the drift tube. The ion detector detects arrival times associated with the at least the portion of the attracted ions.

摘要翻译： 用于监测等离子体中的离子种类的飞行时间离子传感器包括壳体。 漂移管位于外壳中。 提取器电极位于漂移管的第一端处的壳体中，以便从等离子体吸引离子。 多个电极位于漂移管的靠近提取器电极的第一端。 多个电极被偏置以选择性地吸引离子进入漂移管并漂移到漂移管的第二端。 离子检测器位于漂移管的第二端附近。 离子检测器检测与吸引的离子的至少一部分相关联的到达时间。

公开(公告)号：US07453059B2

公开(公告)日：2008-11-18

申请号：US11678524

申请日：2007-02-23

申请人： Bon-Woong Koo ,  Ziwei Fang ,  Ludovic Godet ,  Vikram Singh ,  Vassilis Panayotis Vourloumis ,  Bernard G. Lindsay

发明人： Bon-Woong Koo ,  Ziwei Fang ,  Ludovic Godet ,  Vikram Singh ,  Vassilis Panayotis Vourloumis ,  Bernard G. Lindsay

IPC分类号： G01N27/26 ,  G01N33/00 ,  H01J49/40

CPC分类号： H01J37/32422 ,  H01J37/32935

摘要： A time-of-flight ion sensor for monitoring ion species in a plasma includes a housing. A drift tube is positioned in the housing. An extractor electrode is positioned in the housing at a first end of the drift tube so as to attract ions from the plasma. A plurality of electrodes is positioned at a first end of the drift tube proximate to the extractor electrode. The plurality of electrodes is biased so as to cause at least a portion of the attracted ions to enter the drift tube and to drift towards a second end of the drift tube. An ion detector is positioned proximate to the second end of the drift tube. The ion detector detects arrival times associated with the at least the portion of the attracted ions.

摘要翻译： 用于监测等离子体中的离子种类的飞行时间离子传感器包括壳体。 漂移管位于外壳中。 提取器电极位于漂移管的第一端处的壳体中，以便从等离子体吸引离子。 多个电极位于漂移管的靠近提取器电极的第一端。 多个电极被偏置，以使至少一部分吸引的离子进入漂移管并漂移到漂移管的第二端。 离子检测器位于漂移管的第二端附近。 离子检测器检测与吸引的离子的至少一部分相关联的到达时间。

公开(公告)号：US20090061605A1

公开(公告)日：2009-03-05

申请号：US12267193

申请日：2008-11-07

申请人： Ludovic GODET ,  George D. Papasouliotis ,  Ziwei Fang ,  Richard Appel ,  Vincent Deno ,  Vikram Singh ,  Harold M. Persing

发明人： Ludovic GODET ,  George D. Papasouliotis ,  Ziwei Fang ,  Richard Appel ,  Vincent Deno ,  Vikram Singh ,  Harold M. Persing

IPC分类号： H01L21/265

CPC分类号： H01J37/3171 ,  H01J37/32412 ,  H01J37/32935 ,  H01J2237/31705 ,  H01L21/2236

摘要： A method to provide a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that surface peak dopant profiles and retrograde dopant profiles are realized. The method may include an amorphization step in one embodiment.

摘要翻译： 在等离子体掺杂系统中提供掺杂剂分布调整溶液以满足浓度和结深度要求的方法。 可以执行偏置斜坡调整和偏置斜率调整以实现期望的掺杂剂分布，从而实现表面峰值掺杂剂分布和逆向掺杂剂分布。 该方法可以包括在一个实施方案中的非晶化步骤。

公开(公告)号：US07687787B2

公开(公告)日：2010-03-30

申请号：US12267193

申请日：2008-11-07

申请人： Ludovic Godet ,  George D. Papasouliotis ,  Ziwei Fang ,  Richard Appel ,  Vincent Deno ,  Vikram Singh ,  Harold M. Persing

发明人： Ludovic Godet ,  George D. Papasouliotis ,  Ziwei Fang ,  Richard Appel ,  Vincent Deno ,  Vikram Singh ,  Harold M. Persing

IPC分类号： H01J37/317 ,  H01L21/265 ,  H05H1/24

CPC分类号： H01J37/3171 ,  H01J37/32412 ,  H01J37/32935 ,  H01J2237/31705 ,  H01L21/2236

摘要： A method to provide a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that surface peak dopant profiles and retrograde dopant profiles are realized. The method may include an amorphization step in one embodiment.

摘要翻译： 在等离子体掺杂系统中提供掺杂剂分布调整溶液以满足浓度和结深度要求的方法。 可以执行偏置斜坡调整和偏置斜率调整以实现期望的掺杂剂分布，从而实现表面峰值掺杂剂分布和逆向掺杂剂分布。 该方法可以包括在一个实施方案中的非晶化步骤。

公开(公告)号：US20080160212A1

公开(公告)日：2008-07-03

申请号：US11616314

申请日：2006-12-27

申请人： Bon-Woong Koo ,  Steven R. Walther ,  Christopher J. Leavitt ,  Justin Tocco ,  Sung-Hwan Hyun ,  Timothy J. Miller ,  Jay T. Scheuer ,  Atul Gupta ,  Vikram Singh ,  Deven Raj

发明人： Bon-Woong Koo ,  Steven R. Walther ,  Christopher J. Leavitt ,  Justin Tocco ,  Sung-Hwan Hyun ,  Timothy J. Miller ,  Jay T. Scheuer ,  Atul Gupta ,  Vikram Singh ,  Deven Raj

IPC分类号： B28B7/38 ,  C23C16/00

CPC分类号： H01J37/32706 ,  H01J37/32623 ,  H01L21/67011 ,  H01L21/67069 ,  H01L21/68714 ,  H01L21/68735

摘要： A method and apparatuses for providing improved electrical contact to a semiconductor wafer during plasma processing applications are disclosed. In one embodiment, an apparatus includes a wafer platen for supporting the wafer; and a plurality of electrical contact elements, each of the plurality of electrical contact elements are configured to provide a path for supplying a bias voltage from a bias power supply to the wafer on the wafer platen. The plurality of electrical contact elements are also geometrically arranged such that at least one electrical contact element contacts an inner surface region (e.g., region between a center of wafer and a distance approximately half of the radius of the wafer) and at least one electrical contact element contacts an outer annular surface region (e.g., region between an outer edge of wafer and a distance approximately half of the radius of the wafer).

摘要翻译： 公开了一种用于在等离子体处理应用期间提供与半导体晶片的改进的电接触的方法和装置。 在一个实施例中，一种装置包括用于支撑晶片的晶片台板; 以及多个电接触元件，所述多个电接触元件中的每一个被配置为提供用于将来自偏置电源的偏置电压提供给晶片台板上的晶片的路径。 多个电接触元件也被几何地布置成使得至少一个电接触元件接触内表面区域（例如，晶片的中心与晶片的半径的一半的距离）和至少一个电接触 元件接触外部环形表面区域（例如，晶片的外边缘之间的区域和晶片的半径的一半的距离）。

公开(公告)号：US08679960B2

公开(公告)日：2014-03-25

申请号：US12902250

申请日：2010-10-12

申请人： George D. Papasouliotis ,  Vikram Singh ,  Heyun Yin ,  Helen L. Maynard ,  Ludovic Godet

发明人： George D. Papasouliotis ,  Vikram Singh ,  Heyun Yin ,  Helen L. Maynard ,  Ludovic Godet

IPC分类号： H01L21/425 ,  H01L21/38

CPC分类号： H01L21/2236 ,  H01J37/321 ,  H01J37/32706 ,  H01J37/32834 ,  H01L29/66803

摘要： A method of processing a substrate having horizontal and non-horizontal surfaces is disclosed. The substrate is implanted with particles using an ion implanter. During the ion implant, due to the nature of the implant process, a film may be deposited on the surfaces, wherein the thickness of this film is thicker on the horizontal surfaces. The presences of this film may adversely alter the properties of the substrate. To rectify this, a second process step is performed to remove the film deposited on the horizontal surfaces. In some embodiments, an etching process is used to remove this film. In some embodiments, a material modifying step is used to change the composition of the material comprising the film. This material modifying step may be instead of, or in addition to the etching process.

摘要翻译： 公开了一种处理具有水平和非水平表面的衬底的方法。 使用离子注入机将基片注入颗粒。 在离子注入期间，由于植入过程的性质，可以在表面上沉积膜，其中该膜的厚度在水平表面上更厚。 该膜的存在可能不利地改变基材的性质。 为了纠正这一点，执行第二处理步骤以去除沉积在水平表面上的膜。 在一些实施例中，使用蚀刻工艺去除该膜。 在一些实施方案中，材料修饰步骤用于改变包含该膜的材料的组成。 该材料修饰步骤可以代替或补充蚀刻工艺。

公开(公告)号：US08188445B2

公开(公告)日：2012-05-29

申请号：US12848354

申请日：2010-08-02

申请人： Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson ,  Vikram Singh

发明人： Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson ,  Vikram Singh

IPC分类号： H01J49/10 ,  H01J37/08 ,  H01J23/06

CPC分类号： H01J27/08 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/083 ,  H01J2237/0835 ,  Y10S438/961

摘要： An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator positioned in the arc chamber. The plasma sheath modulator is configured to control a shape of a boundary between a plasma and a plasma sheath proximate the extraction aperture, wherein the plasma sheath modulator includes a semiconductor. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled.

摘要翻译： 离子源包括具有提取孔的电弧室和位于电弧室中的等离子体鞘调制器。 等离子体鞘调制器被配置为控制靠近提取孔的等离子体和等离子体鞘之间的边界的形状，其中等离子体鞘调制器包括半导体。 可以通过离子源产生具有高电流密度的良好聚焦的离子束。 高电流密度离子束可以提高相关过程的吞吐量。 也可以控制离子束的发射。