GLASS WITH NANOSCALE SURFACE FEATURES FROM THERMAL POLING AND METHODS FOR FORMING THE SAME

    公开(公告)号:US20230041269A1

    公开(公告)日:2023-02-09

    申请号:US17862927

    申请日:2022-07-12

    Abstract: A glass substrate with modified surface regions is disclosed. The glass substrate includes a first side and an opposite second side, an alkali-containing bulk disposed between the first and second sides, and a first alkali-depleted region formed in the alkali-containing bulk on the first side. The first alkali-depleted region defines at least a portion of a first topographical feature. The first topographic feature includes a height that extends in a first direction from a base portion of the first topographical feature to an outermost portion of the first topographical feature. The first direction is oriented parallel to a thickness of the glass substrate between the first and second sides. The first topographic feature also includes a width that extends in a second direction between at least two, spaced apart wall portions of the first topographical feature. The second direction is oriented normal to the first direction.

    TOUGH GLASS COMPOSITE AND METHOD
    8.
    发明申请

    公开(公告)号:US20210395142A1

    公开(公告)日:2021-12-23

    申请号:US17289263

    申请日:2019-10-25

    Abstract: Embodiments of a glass substrate including an alkali-containing bulk and an alkali-depleted surface layer, including a substantially homogenous composition with at least 51 mol % Al2O3 are disclosed. In some embodiments, the alkali-depleted surface layer includes about 0.5 atomic % alkali or less. The alkali-depleted surface layer can be substantially free of hydrogen and/or crystallites. Methods for forming a glass substrate with a modified surface layer are also provided.

    RECYCLED GLASS AND GLASS-CERAMIC CARRIER SUSTRATES

    公开(公告)号:US20210159134A1

    公开(公告)日:2021-05-27

    申请号:US17100102

    申请日:2020-11-20

    Abstract: A glass or glass-ceramic carrier substrate, the substrate having undergone at least one complete cycle of a semiconductor fabrication process and having also undergone a reclamation process following the end of the semiconductor fabrication process; the glass or glass-ceramic carrier substrate comprising at least one of the following properties: (i) a coefficient of thermal expansion of less than 13 ppm/° C.; (ii) a Young's Modulus of 70 GPa to 150 GPa; (iii) an IR transmission of greater than 80% at a wavelength of 1064 nm; (iv) a UV transmission of greater than 20% at a wavelength of 255 nm to 360 nm; (v) a thickness tolerance within the same range as the thickness tolerance of the carrier substrate before undergoing at least one complete cycle of the semiconductor fabrication process; (vi) a total thickness variation of less than 2.5 μm; (vii) a failure strength of greater than 80 MPa using a 4-point-bending test; (viii) a pre-shape of 50 μm to 300 μm.

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